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1. 发明申请

US20170139060A1 FABRICATING RADIATION-DETECTING STRUCTURES 有权
公开(公告)号：US20170139060A1
公开(公告)日：2017-05-18
申请号：US15319965
申请日：2015-06-22
申请人： RENSSELAER POLYTECHNIC INSTITUTE
发明人： Rajendra P. DAHAL , Ishwara B. BHAT , Yaron DANON , James Jian-Qiang LU
IPC分类号： G01T1/24 , H01L31/115 , H01L31/18 , G01T3/08
CPC分类号： G01T1/24 , G01T3/08 , H01L31/0328 , H01L31/115 , H01L31/1185 , H01L31/18
摘要： Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities.

2. 发明申请

US20170117429A1 MULTIJUCTION PHOTOVOLTAIC DEVICE HAVING AN Si BARRIER BETWEEN CELLS 审中-公开
公开(公告)号：US20170117429A1
公开(公告)日：2017-04-27
申请号：US15382181
申请日：2016-12-16
申请人： IQE PLC.
发明人： Andrew Johnson , Andrew William Nelson , Robert Cameron Harper
IPC分类号： H01L31/074 , H01L31/0725 , H01L31/0735 , H01L31/0304
CPC分类号： H01L31/0328 , H01L29/16 , H01L29/20 , H01L29/267 , H01L31/02167 , H01L31/03044 , H01L31/068 , H01L31/0687 , H01L31/06875 , H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/1812 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic device, particularly a solar cell, comprises an interface between a layer of Group III-V material and a layer of Group IV material with a thin silicon diffusion barrier provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells.

3. 发明申请

US20160329453A1 METHOD OF MAKING A IV-VI/SILICON THIN-FILM TANDEM SOLAR CELL 审中-公开
标题翻译：制备IV-VI /硅膜薄膜太阳能电池的方法
公开(公告)号：US20160329453A1
公开(公告)日：2016-11-10
申请号：US15213998
申请日：2016-07-19
申请人： Ashok Chaudhari
发明人： Ashok Chaudhari
IPC分类号： H01L31/0725 , H01L31/0236 , H01L31/032 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/02363 , H01L31/02366 , H01L31/0324 , H01L31/0326 , H01L31/0328 , H01L31/18 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or multi junction solar cells and a variety of other electronic devices such as transistors and LEDs. Specifically, the method includes depositing a textured oxide buffer on a substrate; depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a IV-VI compound; and forming a layer on the metal-inorganic film on which an additional element from the IV-VI compound is added, forming a IV-VI layer on a semiconductor device. The films comprising tin sulfides—SnS (tin sulphide), SnS2, and SnS3—are grown on inexpensive substrates, such as glass or flexible plastic, at low temperature, allowing for R2R (roll-to-roll) processing.
摘要翻译：提供了一种简单的制造方法，用于制造用于高效串联或多结太阳能电池的便宜基板上的IV-VI族半导体膜以及诸如晶体管和LED的各种其它电子器件。具体地，该方法包括在基板上沉积纹理氧化物缓冲液; 在缓冲层上沉积来自共晶合金的金属 - 无机膜，该金属是IV-VI化合物的组分; 在其上加入来自IV-VI化合物的附加元素的金属 - 无机膜上形成一层，在半导体器件上形成IV-VI层。包含锡硫化物SnS（硫化锡），SnS2和SnS3的膜在低温下生长在诸如玻璃或柔性塑料的廉价基板上，允许进行R2R（卷对卷）处理。

4. 发明授权

US09461123B2 Semiconducting component 有权
标题翻译：半导体元件
公开(公告)号：US09461123B2
公开(公告)日：2016-10-04
申请号：US12867070
申请日：2009-02-09
申请人： Alexander G. Ulyashin , Smagul Karazhanov
发明人： Alexander G. Ulyashin , Smagul Karazhanov
IPC分类号： H01L31/04 , H01L29/24 , H01L31/0328 , H01L31/072
CPC分类号： H01L29/24 , H01L21/02521 , H01L21/02631 , H01L31/0321 , H01L31/0328 , H01L31/072 , Y02E10/50
摘要： This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.
摘要翻译：本发明涉及包含至少一层p型或n型材料的层（2,3）的电子半导体元件，其中所述p型或n型材料的层由具有选择的掺杂剂。本发明还涉及生产该组分的方法。

5. 发明申请

US20160269668A1 SOLID-STATE IMAGE CAPTURING ELEMENT, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 有权
标题翻译：固态图像捕获元件及其制造方法及电子设备
公开(公告)号：US20160269668A1
公开(公告)日：2016-09-15
申请号：US15035300
申请日：2014-11-17
申请人： SONY CORPORATION
发明人： ITARU OSHIYAMA , HIROTSUGU TAKAHASHI
IPC分类号： H04N5/3745 , H01L31/0224 , H01L27/146 , H01L31/032 , H01L31/0328
CPC分类号： H04N5/3745 , H01L27/14623 , H01L27/14625 , H01L27/1463 , H01L27/1464 , H01L31/022466 , H01L31/0322 , H01L31/0328 , H04N5/374
摘要： The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.
摘要翻译：本公开涉及能够控制耗尽层的厚度的固态图像捕获元件，其制造方法和电子器件。固体摄像元件包括像素，其中构成为对入射光进行光电转换的光电转换膜和被配置为具有预定固定电荷的固定电荷膜的像素堆叠在半导体衬底上。本公开的技术可以应用于例如背面照射型固态图像捕获元件，诸如数字静态照相机或摄像机的图像捕获设备，具有图像捕获功能的移动终端设备和使用作为图像拍摄单元的固体摄像元件。

6. 发明授权

US09306090B2 Composite particle, composite particle dispersion, and photovoltaic device, 有权
标题翻译：复合颗粒，复合颗粒分散体和光伏器件，
公开(公告)号：US09306090B2
公开(公告)日：2016-04-05
申请号：US14413534
申请日：2012-07-23
申请人： Hiroyuki Suto
发明人： Hiroyuki Suto
IPC分类号： H01L31/055 , H01L31/0232 , H01L31/0352 , H01L31/0328
CPC分类号： H01L31/02322 , H01L31/02327 , H01L31/0328 , H01L31/035218 , H01L31/055 , Y02E10/52
摘要： A composite particle including a core member including a rare earth ion which shows an upconversion effect and a retaining material which retains the rare earth ion, and a semiconductor member covering a part or all of the surface of the core member, wherein the retaining material includes a semiconductor material having a band gap greater than energy difference necessary for a second step excitation in the rare earth ion to occur, or an insulating material, and the semiconductor member includes a semiconductor material having a band gap smaller than the energy difference between a first excited state and a ground state of the rare earth ion.
摘要翻译：一种复合颗粒，其包括包含表现出上转换效果的稀土离子的芯构件和保留稀土离子的保持材料，以及覆盖芯构件的一部分或全部表面的半导体构件，其中，保持材料包括具有比在稀土离子中进行第二级激发所需的能量差大的带隙的半导体材料或绝缘材料，并且所述半导体部件包括具有小于所述稀土离子之间的能量差的带隙的半导体材料激发态和稀土离子的基态。

7. 发明授权

US09236528B2 Light emitting, photovoltaic or other electronic apparatus and system 有权
公开(公告)号：US09236528B2
公开(公告)日：2016-01-12
申请号：US13763642
申请日：2013-02-09
申请人： NthDegree Technologies Worldwide Inc. , The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
发明人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
IPC分类号： H01L29/205 , H01L33/00 , H01L29/06 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/20 , B82Y20/00 , B82Y30/00 , H01L27/32 , H01L51/00 , H01L51/44 , H01L51/52 , H01L51/56 , H01L31/0232 , H01L33/08 , H01L31/0352 , H01L31/05 , H01L31/054 , H01L31/068 , H01L31/0475
CPC分类号： H01L33/00 , B82Y20/00 , B82Y30/00 , H01L21/30 , H01L27/142 , H01L27/156 , H01L27/32 , H01L27/3281 , H01L31/0232 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/0328 , H01L31/0352 , H01L31/035281 , H01L31/0475 , H01L31/05 , H01L31/0504 , H01L31/0508 , H01L31/0512 , H01L31/0543 , H01L31/0547 , H01L31/068 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/0096 , H01L51/447 , H01L51/52 , H01L51/5203 , H01L51/5265 , H01L51/5271 , H01L51/5275 , H01L51/56 , H01L2251/5369 , H01L2924/0002 , Y02E10/52 , Y02E10/547 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

8. 发明申请

US20150329359A1 SYNTHESIS AND CHARACTERIZATION OF LEAD SELENIDE CAPPED WITH A BENZOATE LIGAND 有权
标题翻译：用苯甲酸酯配体填充的铅锡纳底线的合成和表征
公开(公告)号：US20150329359A1
公开(公告)日：2015-11-19
申请号：US14555567
申请日：2014-11-26
申请人： Mitk'El B. Santiago Berríos , Weyshla A. Rodríguez Rodríguez
发明人： Mitk'El B. Santiago Berríos , Weyshla A. Rodríguez Rodríguez
IPC分类号： C01B19/00
CPC分类号： H01L31/0328 , B82Y30/00 , C01B19/007 , C01P2002/72 , C01P2002/82 , C01P2004/03 , C01P2006/40 , H01L31/0216 , H01L31/0272 , H01L31/0324 , Y02P20/134 , Y10S977/774 , Y10S977/932
摘要： Semiconductor materials offer several potential benefits as active elements in the development of harvesting-energy conversion technologies. In particular, lead selenide (PbSe) semiconductors have been used and proposed to design solar energy harvesting devices, IR sensors, FET devices, amongst others. The present disclosure provides a simple, low cost synthesis of lead selenide using benzoic acid as the capping ligand in an opened environment. The use of an aromatic ligand, and mores specifically benzoic acid, provides robustness and more durability to the lead selenide, and therefore prevents the lead selenide from breaking or cracking easily. Also the aromatic ligand prevents the degradation and oxidation of the lead selenide, without affecting any of the lead selenide electronic and chemical characteristics.
摘要翻译：半导体材料作为收获能转换技术发展的活跃因素提供了几个潜在的优势。特别地，硒化铅（PbSe）半导体已经被使用并被提出来设计太阳能收集装置，IR传感器，FET装置等。本公开提供了在开放环境中使用苯甲酸作为封端配体的简单，低成本的硒化铅合成。使用芳族配体，特别是苯甲酸提供对硒化铅的坚固性和更耐久性，因此防止硒化铅容易破裂或破裂。此外，芳族配体防止硒化铅的降解和氧化，而不影响硒化铅的电子和化学特性。

9. 发明授权

US09064990B2 Ultraviolet sensor and method for manufacturing the same 有权
标题翻译：紫外线传感器及其制造方法
公开(公告)号：US09064990B2
公开(公告)日：2015-06-23
申请号：US13706435
申请日：2012-12-06
申请人： Murata Manufacturing Co., Ltd.
发明人： Kazutaka Nakamura
IPC分类号： H01L31/0296 , H01L31/109 , H01L31/18 , H01L31/0328
CPC分类号： H01L31/0296 , H01L31/0328 , H01L31/109 , H01L31/18 , H01L31/1828
摘要： An ultraviolet sensor has a p-type semiconductor layer composed of a solid solution of NiO and ZnO, and an n-type semiconductor layer composed of ZnO and joined to the p-type semiconductor layer such that a part of the surface of the p-type semiconductor layer is exposed. In the p-type semiconductor layer, trivalent Ni is contained in a crystal grain in a state of being solid-solved with the solid solution of NiO and ZnO. The trivalent Ni can be contained in the crystal grain of the p-type semiconductor layer by adding NiOOH to NiO and ZnO, and firing the resulting mixture. Thereby, an inexpensive ultraviolet sensor capable of being downsized, which can easily detect the intensity of ultraviolet light by a photovoltaic power without utilizing a peripheral circuit can be realized.
摘要翻译：紫外线传感器具有由NiO和ZnO的固溶体构成的p型半导体层和由ZnO构成的n型半导体层，并与p型半导体层接合，使得p型半导体层的p型半导体层的一部分，型半导体层露出。在p型半导体层中，利用NiO和ZnO的固溶体固溶的状态，在晶粒中含有3价Ni。通过向NiO和ZnO中添加NiOOH，可以在p型半导体层的晶粒中含有三价Ni，并烧结所得到的混合物。因此，可以实现能够小型化的便宜的紫外线传感器，其可以在不利用外围电路的情况下容易地通过光伏电力检测紫外光的强度。

10. 发明申请

US20150083205A1 PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：光电转换元件
公开(公告)号：US20150083205A1
公开(公告)日：2015-03-26
申请号：US14488627
申请日：2014-09-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akira FUJIMOTO , Tsutomu NAKANISHI , Kenji NAKAMURA
IPC分类号： H01L31/0725 , H01L31/0224
CPC分类号： H01L31/0725 , H01L31/022433 , H01L31/0328 , H01L31/035281 , H01L31/078 , Y02E10/50
摘要： The present disclosure provides a photoelectric conversion element comprising a photoelectric conversion layer laminated a first metal layer, a first semiconductor layer, a second semiconductor layer and a second metal layer. The first or second metal layer contains a porous metal thin film, and the porous metal thin film has plural openings penetrating through the film. Each of the openings has an area of 80 nm2 to 0.8 μm2 inclusive on average, and the porous metal thin film has a thickness of 2 nm to 200 nm inclusive. The second semiconductor layer has a smaller band gap than the first semiconductor layer, has polarity opposite to that of the first semiconductor layer, and is positioned within 5 nm from the porous metal thin film.
摘要翻译：本公开提供一种光电转换元件，其包括层叠了第一金属层，第一半导体层，第二半导体层和第二金属层的光电转换层。第一或第二金属层包含多孔金属薄膜，并且多孔金属薄膜具有贯穿膜的多个开口。每个开口的平均面积为80nm 2〜0.8μm2，多孔金属薄膜的厚度为2nm〜200nm。第二半导体层具有比第一半导体层更小的带隙，具有与第一半导体层的极性相反的极性，并且位于距离多孔金属薄膜5nm以内。

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