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1. 发明授权

US09698311B2 Blue light-emitting diodes based on zinc selenide quantum dots 有权
公开(公告)号：US09698311B2
公开(公告)日：2017-07-04
申请号：US14244539
申请日：2014-04-03
申请人： Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V. , Korea Electronics Technology Institute
发明人： Tonino Greco , Christian Ippen , Armin Wedel
IPC分类号： H01L33/26 , H01L33/44 , C09K11/88 , H01L21/02 , H01L33/00 , H01L33/28 , G01N33/58 , B01J13/00 , B01J13/02 , B01J13/22 , H01L31/0352 , B82Y20/00 , B82Y40/00
CPC分类号： H01L33/44 , B01J13/0004 , B01J13/02 , B01J13/22 , B82Y20/00 , B82Y40/00 , C09K11/883 , G01N33/588 , H01L21/02474 , H01L21/02477 , H01L31/035218 , H01L33/0087 , H01L33/28 , Y10S977/89 , Y10S977/95
摘要： The present invention relates to colloidal quantum dots, to a process for producing such colloidal quantum dots, to the use thereof and to optoelectronic components comprising colloidal quantum dots.

2. 发明申请

US20170158959A1 Gas Phase Enhancement of Emission Color Quality in Solid State LEDs 审中-公开
公开(公告)号：US20170158959A1
公开(公告)日：2017-06-08
申请号：US15435696
申请日：2017-02-17
申请人： Nanoco Technologies Ltd.
发明人： Nigel Pickett , Nathalie Gresty
IPC分类号： C09K11/88 , C09K11/70 , C09K11/02 , C01B19/00 , C01G11/02 , H01L33/28 , C01B25/08 , H01L33/06 , H01L33/00 , H01L33/30 , H01L33/32 , C09K11/56 , C01G9/08
CPC分类号： C09K11/883 , B82Y20/00 , B82Y40/00 , C01B19/007 , C01B25/082 , C01B25/087 , C01G9/08 , C01G11/02 , C01P2002/84 , C01P2004/64 , C01P2006/60 , C09K11/02 , C09K11/565 , C09K11/70 , H01L33/002 , H01L33/0087 , H01L33/06 , H01L33/08 , H01L33/28 , H01L33/30 , H01L33/32 , Y10S977/774 , Y10S977/891 , Y10S977/95
摘要： Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material.

3. 发明授权

US09574135B2 Gas phase enhancement of emission color quality in solid state LEDs 有权
标题翻译：固态发光二极管发射色质气相增强
公开(公告)号：US09574135B2
公开(公告)日：2017-02-21
申请号：US14463928
申请日：2014-08-20
申请人： Nanoco Technologies Ltd.
发明人： Nigel Pickett , Nathalie Gresty
IPC分类号： H01L33/00 , H01L33/06 , C09K11/88 , C09K11/02 , C09K11/56 , C09K11/70 , C01B19/00 , C01B25/08 , C01G9/08 , C01G11/02 , H01L33/30 , H01L33/08
CPC分类号： C09K11/883 , B82Y20/00 , B82Y40/00 , C01B19/007 , C01B25/082 , C01B25/087 , C01G9/08 , C01G11/02 , C01P2002/84 , C01P2004/64 , C01P2006/60 , C09K11/02 , C09K11/565 , C09K11/70 , H01L33/002 , H01L33/0087 , H01L33/06 , H01L33/08 , H01L33/28 , H01L33/30 , H01L33/32 , Y10S977/774 , Y10S977/891 , Y10S977/95
摘要： Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material.
摘要翻译：发光材料由具有设置在孔内的量子点（QD）的多孔发光半导体制成。根据一些实施例，量子点具有在尺寸上与孔的宽度基本相等的直径。通过将多孔半导体暴露于气体QD前体化合物中，在孔中形成量子点，其在孔内反应以产生量子点。根据某些实施方案，孔径限制了由气相反应产生的量子点的尺寸。 QD吸收由发光半导体材料发射的光并且以比被吸收的光更长的波长再发光，从而“从半导体材料中”转换“光。

4. 发明申请

US20160218141A1 QUANTUM DOT LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE 有权
标题翻译：量子发光二极管及其制造方法，显示装置
公开(公告)号：US20160218141A1
公开(公告)日：2016-07-28
申请号：US14347849
申请日：2013-08-05
申请人： BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Peizhi CAI
IPC分类号： H01L27/15 , H01L33/06 , H01L33/00 , H01L33/16 , H01L33/28 , H01L33/42 , C09K11/56 , H01L33/08
CPC分类号： H01L27/15 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/08 , C09K11/562 , H01L27/322 , H01L33/0087 , H01L33/06 , H01L33/08 , H01L33/16 , H01L33/28 , H01L33/42 , H01L33/504 , H01L2933/0016 , H05B33/14 , Y10S977/774 , Y10S977/892 , Y10S977/95
摘要： A quantum dot light emitting diode, including a first electrode and a second electrode, a quantum dot light emitting layer disposed between the two electrodes, including at least a red quantum dot, a green quantum dot and a blue quantum dot, and a black matrix at least disposed among the red quantum dot, the green quantum dot and the blue quantum dot; one of the first electrode and the second electrode that is located on a light exiting side is at least a transparent electrode. With the quantum dot light emitting diode, a full-color display can be realized, and the aperture ratio of pixels can be effectively enhanced. There are further disclosed a manufacturing method of the quantum dot light emitting diode and a display device.
摘要翻译：一种包括第一电极和第二电极的量子点发光二极管，设置在两个电极之间的量子点发光层，至少包括红色量子点，绿色量子点和蓝色量子点以及黑色矩阵至少设置在红色量子点，绿色量子点和蓝色量子点之间; 位于光出射侧的第一电极和第二电极之一至少为透明电极。利用量子点发光二极管，可以实现全色显示，可以有效提高像素的开口率。进一步公开了量子点式发光二极管和显示装置的制造方法。

5. 发明申请

US20150122320A1 Plasmonic Graphene and Method of Making the Same 有权
标题翻译：等离子体石墨烯及其制造方法
公开(公告)号：US20150122320A1
公开(公告)日：2015-05-07
申请号：US13657161
申请日：2012-10-22
申请人： University of Kansas
发明人： Judy Wu , Guowei Xu , Jianwei Liu
IPC分类号： H01L31/028 , H01L31/103 , H01L49/00 , B05D3/00 , H01L31/0224
CPC分类号： H01L31/028 , B05D3/007 , B05D2201/06 , B82Y30/00 , B82Y40/00 , H01L21/02376 , H01L21/02425 , H01L21/02527 , H01L21/02554 , H01L21/02603 , H01L21/02628 , H01L21/02658 , H01L29/0676 , H01L29/1606 , H01L31/022466 , H01L31/103 , H01L33/0087 , H01L33/18 , H01L49/006 , Y10T428/30
摘要： Plasmonic graphene is fabricated using thermally assisted self-assembly of plasmonic nanostructure on graphene. Silver nanostructures were deposited on graphene as an example.
摘要翻译：使用等离子体激元纳米结构的热辅助自组装在石墨烯上制造等离子体石墨烯。银纳米结构沉积在石墨烯上作为例子。

6. 发明授权

US09018626B2 ZnO film structure and method of forming the same 有权
标题翻译： ZnO薄膜结构及其形成方法
公开(公告)号：US09018626B2
公开(公告)日：2015-04-28
申请号：US14141119
申请日：2013-12-26
申请人： Gwangju Institute of Science and Technology
发明人： Seong-Ju Park , Yong Seok Choi , Jang-Won Kang , Byeong Hyeok Kim
IPC分类号： H01L33/28 , H01L33/00
CPC分类号： H01L33/0083 , H01L21/02389 , H01L21/02403 , H01L21/0242 , H01L21/02472 , H01L21/02554 , H01L21/02642 , H01L21/02647 , H01L29/22 , H01L33/0087 , H01L33/28
摘要： Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.
摘要翻译：本文公开了ZnO膜结构及其形成方法。通过外延横向过度生长（ELOG）生长的ZnO膜的位错密度最小化。为了在进行ELOG时阻止ZnO膜与掩模层之间的化学反应，掩模层的材料为AlF 3，NaF 2，SrF或MgF 2。因此，ZnO和掩模层之间的化学反应被阻断，并且基板的位错转移也被阻挡。

7. 发明授权

US08772829B2 Zinc-oxide based epitaxial layers and devices 有权
标题翻译：基于氧化锌的外延层和器件
公开(公告)号：US08772829B2
公开(公告)日：2014-07-08
申请号：US12951308
申请日：2010-11-22
申请人： Bunmi T. Adekore , Jonathan Pierce
发明人： Bunmi T. Adekore , Jonathan Pierce
IPC分类号： H01L31/102
CPC分类号： C30B25/18 , C30B29/16 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/0087 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.
摘要翻译：提供了形成平面氧化锌基外延层，相关异质结构和器件的方法。

8. 发明申请

US20140027713A1 DEVICE INCLUDING QUANTUM DOTS 审中-公开
标题翻译：包括量子的设备
公开(公告)号：US20140027713A1
公开(公告)日：2014-01-30
申请号：US14042074
申请日：2013-09-30
申请人： QD Vision, Inc.
发明人： Marshall Cox , Craig Breen , Zhaoqun Zhou , Jonathan S. Steckel
IPC分类号： H01L33/04 , H01L33/00
CPC分类号： H01L33/04 , H01L21/02439 , H01L21/02491 , H01L21/02502 , H01L21/02521 , H01L21/0256 , H01L21/02601 , H01L33/005 , H01L33/0087 , H01L33/06 , H01L33/28 , H01L33/30 , H01L51/502
摘要： A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).
摘要翻译：一种制造器件的方法，所述方法包括：在第一电极上沉积包含量子点的层，所述量子点包括附着于其外表面的配体; 处理包含量子点的沉积层的表面以除去暴露的配体; 并在其上形成器件层。还公开了根据所公开的方法制造的装置。本发明的另一方面涉及一种包括第一电极和第二电极的装置，以及在两个电极之间包含量子点的层，该层包括从分散体沉积的量子点，所述分散体在形成之后已被处理以除去暴露的配体设备中的层。本发明的另一方面涉及一种包括第一电极和第二电极的装置，包括设置在第一和第二电极之间的第一无机半导体材料的层和设置在第一和第二电极之间的多个量子点，外部包括第二无机半导体材料的量子点的表面，其中第一无机半导体材料和第二无机半导体材料的组成相同（不考虑量子点的外表面上的任何配体）。

9. 发明授权

US08461568B2 Re-emitting semiconductor construction with enhanced extraction efficiency 有权
标题翻译：重新发射半导体结构，提高了提取效率
公开(公告)号：US08461568B2
公开(公告)日：2013-06-11
申请号：US13264924
申请日：2010-04-30
申请人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
发明人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/167 , H01L33/0087 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要翻译：一叠半导体层形成再发射半导体结构（RSC）。堆叠包括将第一波长的光转换成第二波长的光的有源区，该有源区包括至少一个势阱。堆叠还包括从堆叠的外表面延伸到活动区域的无效区域。在堆叠中形成凹陷，其从外表面延伸到非活性区域。平均凹陷深度为无活性区域的厚度的至少50％或最近的潜在井距离的至少50％。在平面图中，凹陷可以具有至少40％的包装密度。凹陷部也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

10. 发明申请

US20130143414A1 NANOSTRUCTURED ELECTRODES AND ACTIVE POLYMER LAYERS 有权
标题翻译：纳米结构电极和活性聚合物层
公开(公告)号：US20130143414A1
公开(公告)日：2013-06-06
申请号：US13816480
申请日：2011-08-11
申请人： Jayan Thomas , Nasser N. Peyghambarian , Robert A. Norwood , Palash Gangopadhyay
发明人： Jayan Thomas , Nasser N. Peyghambarian , Robert A. Norwood , Palash Gangopadhyay
IPC分类号： H01L21/02 , H01B13/00
CPC分类号： H01L21/0226 , H01B13/0036 , H01L31/022466 , H01L31/02366 , H01L31/0392 , H01L31/03925 , H01L33/0087 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/28 , H01L33/38 , H01L51/0021 , H01L2933/0016 , Y02E10/549 , Y02P70/521 , Y10S977/89 , Y10S977/932
摘要： Embodiments of methods for fabricating polymer nanostructures and nanostructured electrodes are disclosed. Material layers are deposited onto polymer nanostructures to form nanostructured electrodes and devices including the nanostructured electrodes, such as photovoltaic cells, light-emitting diodes, and field-effect transistors. Embodiments of the disclosed methods are suitable for commercial-scale production of large-area nanostructured polymer scaffolds and large-area nanostructured electrodes.
摘要翻译：公开了制造聚合物纳米结构和纳米结构电极的方法的实施方案。将材料层沉积到聚合物纳米结构上以形成纳米结构电极和包括纳米结构电极的器件，例如光伏电池，发光二极管和场效应晶体管。所公开的方法的实施例适用于大面积纳米结构聚合物支架和大面积纳米结构电极的商业规模生产。

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