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1. 发明申请

US20180301875A1 DEVICES WITH ULTRA-SMALL VERTICAL CAVITY SURFACE EMITTING LASER EMITTERS INCORPORATING BEAM STEERING 审中-公开
公开(公告)号：US20180301875A1
公开(公告)日：2018-10-18
申请号：US15951824
申请日：2018-04-12
申请人： Sense Photonics, Inc.
发明人： Scott Burroughs , Brent Fisher , James Carter
IPC分类号： H01S5/42 , H01S5/40 , H01S5/062 , H01S5/183 , G02B26/10
CPC分类号： H01S5/18397 , F21V5/041 , F21V5/045 , G01J1/44 , G01J2001/448 , G01S7/4815 , G01S17/02 , G01S17/89 , G02B3/0006 , G02B5/0883 , G02B26/10 , H01L25/50 , H01L31/167 , H01L31/18 , H01S3/025 , H01S5/0028 , H01S5/0071 , H01S5/0216 , H01S5/0217 , H01S5/02288 , H01S5/02292 , H01S5/026 , H01S5/0262 , H01S5/062 , H01S5/12 , H01S5/183 , H01S5/18394 , H01S5/30 , H01S5/40 , H01S5/4025 , H01S5/4037 , H01S5/4075 , H01S5/423
摘要： A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

2. 发明申请

US20180190693A1 ARRAY OF OPTOELECTRONIC STRUCTURES AND FABRICATION THEREOF 审中-公开
公开(公告)号：US20180190693A1
公开(公告)日：2018-07-05
申请号：US15906316
申请日：2018-02-27
申请人： International Business Machines Corporation
发明人： Mattias B. Borg , Lukas Czornomaz , Veeresh V. Deshpande , Vladimir Djara , Heike E. Riel , Heinz Schmid
IPC分类号： H01L27/146 , H01S5/40 , H01S5/30 , H01S5/026 , H01S5/02 , H01L31/0304 , H01L27/148 , H01L31/12
CPC分类号： H01L27/1469 , H01L27/14636 , H01L27/1465 , H01L27/14694 , H01L27/14881 , H01L31/03046 , H01L31/12 , H01S5/021 , H01S5/0262 , H01S5/3013 , H01S5/4025
摘要： A method of fabrication of an array of optoelectronic structures includes first providing a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells includes an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.

3. 发明授权

US09864135B2 Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material 有权
公开(公告)号：US09864135B2
公开(公告)日：2018-01-09
申请号：US15153093
申请日：2016-05-12
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Cheng-Wei Cheng , Ning Li , Devendra K. Sadana , Kuen-Ting Shiu
IPC分类号： G02B6/12 , H01S5/02 , H01L31/0296 , H01L31/18 , G02B6/122 , H01S5/026 , H01S5/343 , H01L27/144 , H01L31/0232 , H01L31/0304 , H01L31/105 , H01L31/16 , H01L27/108 , H01L27/11517 , H01L27/11563 , H01L29/73 , H01L29/772 , H01L29/78 , H01L29/808 , H01L29/872
CPC分类号： G02B6/12004 , G02B6/1228 , H01L27/108 , H01L27/11517 , H01L27/11563 , H01L27/1443 , H01L29/73 , H01L29/772 , H01L29/78 , H01L29/785 , H01L29/808 , H01L29/872 , H01L31/02325 , H01L31/0296 , H01L31/0304 , H01L31/105 , H01L31/16 , H01L31/1852 , H01S5/021 , H01S5/026 , H01S5/0262 , H01S5/343
摘要： An electrical device that in one embodiment includes a first semiconductor device positioned on a first portion of a type IV semiconductor substrate, and an optoelectronic light emission device of type III-V semiconductor materials that is in electrical communication with the first semiconductor device. The optoelectronic light emission device is positioned adjacent to the first semiconductor device on the first portion of the type IV semiconductor substrate. A dielectric waveguide is present on a second portion of the type IV semiconductor substrate. An optoelectronic light detection device of type III-V semiconductor material is present on a third portion of the type IV semiconductor device. The dielectric waveguide is positioned between and aligned with the optoelectronic light detection device and optoelectronic light emission device to transmit a light signal from the optoelectronic light emission device to the optoelectronic light detection device.

4. 发明申请

US20170179682A1 OPTICAL SENSOR, OPTICAL EXAMINATION DEVICE, AND OPTICAL PROPERTY DETECTION METHOD 审中-公开
公开(公告)号：US20170179682A1
公开(公告)日：2017-06-22
申请号：US15379856
申请日：2016-12-15
申请人： Toshihiro ISHII , Yoichiro TAKAHASHI , Sunao CHUBACHI , Masayuki FUJIWARA , Toshihide SASAKI , Kazuhiko ADACHI
发明人： Toshihiro ISHII , Yoichiro TAKAHASHI , Sunao CHUBACHI , Masayuki FUJIWARA , Toshihide SASAKI , Kazuhiko ADACHI
IPC分类号： H01S5/026 , H01S5/42 , G01N21/47 , G01J1/02 , A61B5/16 , H01L31/0232 , H01L31/0224 , H01L31/103 , A61B5/00 , H01S5/183 , H01L31/167
CPC分类号： H01S5/0262 , A61B5/0042 , A61B5/0073 , A61B5/0261 , A61B5/055 , A61B5/1455 , A61B5/165 , A61B5/4887 , A61B2505/09 , A61B2562/0233 , A61B2562/146 , A61B2562/16 , G01J1/0209 , G01J1/0411 , G01N21/359 , G01N21/4785 , G01N21/4795 , G01N21/49 , G01N2201/0612 , H01L31/022408 , H01L31/02327 , H01L31/103 , H01L31/167 , H01S5/02208 , H01S5/02288 , H01S5/0264 , H01S5/18347 , H01S5/18358 , H01S5/423
摘要： An optical sensor, an optical examination device, and a method of detecting optical properties. The optical sensor includes an irradiation system including light irradiator to irradiate a test object with light, and a detection system to detect the light that is emitted from the irradiation system to the test object and has propagated through the test object. The light irradiator includes a multilayered structure having an active layer, and the multilayered structure includes a surface-emitting laser element and a photo-sensing element optically connected to the surface-emitting laser element. The optical examination device includes the optical sensor, and a controller to calculate optical properties of the test object based on a detection result of the optical sensor. The method includes performing optical simulation to obtain a detection light quantity distribution for an optical model and performing inverse problem estimation.

5. 发明授权

US09601902B2 Optical signal amplification 有权
公开(公告)号：US09601902B2
公开(公告)日：2017-03-21
申请号：US14307057
申请日：2014-06-17
申请人： University of Central Florida Research Foundation, Inc.
发明人： Aravinda Kar , Tariq Manzur
IPC分类号： H01S5/00 , H01S5/026 , B82Y20/00 , G01J1/42 , H01L21/223 , H01L21/268 , H01L27/146 , H01S5/183 , H01S5/343 , H01S5/42
CPC分类号： H01S5/0264 , B82Y20/00 , G01J1/42 , H01L21/223 , H01L21/2233 , H01L21/268 , H01L27/14643 , H01S5/0028 , H01S5/0262 , H01S5/183 , H01S5/34306 , H01S5/426
摘要： A method of optical signal amplification. Incident photons are received at a photodetector including a doped semiconductor biased by a power source. The photons generate a change in a reflective property, refractive index, or electrical conductivity of the doped semiconductor. For the change in reflective property or refractive index, a first optical signal is reflected off the photodetector to provide a reflected beam, or the photodetector includes a reverse biased semiconductor junction including the doped semiconductor within a laser resonator including a laser medium, wherein a second optical signal is emitted. For the change in electrical conductivity the photodetector includes a reversed biased semiconductor junction that is within an electrical circuit along with an electrically driven light emitting device, where a drive current provided to the light emitting device increases as the electrical conductivity of the photodetector decreases, and the light emitting device emits a third optical signal.

6. 发明授权

US09575162B2 Compressive scanning lidar 有权
标题翻译：压缩式扫描激光雷达
公开(公告)号：US09575162B2
公开(公告)日：2017-02-21
申请号：US14317753
申请日：2014-06-27
申请人： HRL LABORATORIES LLC
发明人： Yuri Owechko
IPC分类号： G01S7/481 , G01S17/02 , H01S5/02 , H01S5/026 , H01S5/12 , G01S17/32 , G01S17/89 , G01S7/48
CPC分类号： G01S7/4817 , G01S7/4808 , G01S17/02 , G01S17/325 , G01S17/89 , H01S5/021 , H01S5/0215 , H01S5/0262 , H01S5/12
摘要： A method for increasing resolution of an image formed of received light from an illuminated spot includes measuring a y vector for measurement kernels A1 to AM, where M is a number of the measurement kernels, measuring the y vector including programming a programmable N-pixel micromirror or mask located in a return path of a received reflected scene spot with a jth measurement kernel Aj of the measurement kernels A1 to AM, measuring y, wherein y is an inner product of a scene reflectivity f(α,β) with the measurement kernel Aj for each range bin ri, wherein α and β are azimuth and elevation angles, respectively, repeating programming the programmable N-pixel micromirror or mask and measuring y for each measurement kernel A1 to AM, and forming a reconstructed image using the measured y vector, wherein forming the reconstructed image includes using compressive sensing or Moore-Penrose reconstruction.
摘要翻译：用于增加由受光点形成的图像的分辨率的方法包括：测量用于测量内核A1至AM的ay向量，其中M是测量内核的数量，测量包括编程可编程N像素微镜的y矢量，测量y，测量y，其中y是场景反射率f（α，β）与测量核心Aj的内积，其中y是测量内核A1至AM的第j个测量核心Aj的接收反射场景点的返回路径对于每个范围bin ri，其中α和β分别是方位角和仰角，重复编程可编程N像素微镜或掩模，并测量每个测量核A1至AM的y，并使用测量的y矢量形成重建图像，其中形成重建图像包括使用压缩感测或Moore-Penrose重建。

7. 发明申请

US20160320573A1 PHOTO DIODE 有权
标题翻译：照片二极管
公开(公告)号：US20160320573A1
公开(公告)日：2016-11-03
申请号：US15143148
申请日：2016-04-29
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Eui Su LEE , Won Hui LEE , Kyung Hyun PARK
IPC分类号： G02B6/42
CPC分类号： G02B6/4201 , H01L31/09 , H01S5/0262 , H01S5/1007
摘要： Disclosed is a photo diode. The photo diode includes: at least two branched waveguides configured to receive beating signals; absorbing layers disposed in vertical directions to the waveguides, and disposed while being spaced apart from distal ends of the waveguides by a predetermined interval; and one or more intermediate layers formed based on the distal ends of the waveguides and disposed with the absorbing layers at upper end of the one or more intermediate layers.
摘要翻译：公开了一种光电二极管。所述光电二极管包括：至少两个分支波导，被配置为接收跳动信号; 沿垂直方向设置在波导上的吸收层，并且与波导的远端间隔开预定间隔; 以及基于波导的远端形成的一个或多个中间层，并且在一个或多个中间层的上端设置有吸收层。

8. 发明授权

US09344200B2 Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth 有权
标题翻译：具有III-V光学互连的互补金属氧化物半导体器件，其具有使用侧面过度生长形成的III-V外延半导体材料
公开(公告)号：US09344200B2
公开(公告)日：2016-05-17
申请号：US14509601
申请日：2014-10-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Cheng-Wei Cheng , Ning Li , Devendra K. Sadana , Kuen-Ting Shiu
IPC分类号： H01L31/0232 , H04B10/80 , H01L31/173 , H01L31/18
CPC分类号： G02B6/12004 , G02B6/12002 , G02B6/1228 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12121 , G02B2006/12123 , H01L27/1203 , H01L31/0232 , H01L31/02322 , H01L31/173 , H01L31/1836 , H01L33/007 , H01L33/502 , H01S5/0261 , H01S5/0262 , H01S5/3013 , H01S5/343 , H02S40/44 , H04B10/801
摘要： An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.
摘要翻译：一种电气装置，其包括位于基板的第一部分上的第一半导体器件和位于所述基板的第三部分上的第二半导体器件，其中所述基板的第一和第三部分被所述基板的第二部分分开。层间电介质层存在于衬底的第一，第二和第三部分上。层间电介质层存在于第一和第二半导体器件上。光学互连件位于半导体衬底的第二部分上方。光学互连件的至少一个材料层包括外延材料，该外延材料通过延伸穿过至少一个层间电介质层的通孔与衬底的第二部分内的种子表面直接接触。

9. 发明授权

US09331453B2 Laser diode device 有权
标题翻译：激光二极管装置
公开(公告)号：US09331453B2
公开(公告)日：2016-05-03
申请号：US14373998
申请日：2013-03-11
申请人： OSRAM Opto Semiconductors GmbH
发明人： Uwe Strauβ , Sönke Tautz , Alfred Lell , Clemens Vierheilig
IPC分类号： H01S5/022 , H01S5/323 , H01S5/026 , H01S5/024
CPC分类号： H01S5/022 , H01S5/02212 , H01S5/02272 , H01S5/02461 , H01S5/02469 , H01S5/0262 , H01S5/32341 , H01S2301/176
摘要： A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm.
摘要翻译：激光二极管器件具有在安装部分的壳体中具有基于氮化物复合半导体材料的安装部分和激光二极管芯片的壳体。激光二极管芯片通过焊料层直接安装在安装部分上，焊料层的厚度大于或等于3μm。

10. 发明申请

US20150378011A1 COMPRESSIVE SCANNING LIDAR 有权
标题翻译：压缩扫描仪
公开(公告)号：US20150378011A1
公开(公告)日：2015-12-31
申请号：US14317753
申请日：2014-06-27
申请人： HRL LABORATORIES LLC
发明人： Yuri OWECHKO
IPC分类号： G01S7/48
CPC分类号： G01S7/4817 , G01S7/4808 , G01S17/02 , G01S17/325 , G01S17/89 , H01S5/021 , H01S5/0215 , H01S5/0262 , H01S5/12
摘要： A method for increasing resolution of an image formed of received light from an illuminated spot includes measuring a y vector for measurement kernels A1to AM, where M is a number of the measurement kernels, measuring the y vector including programming a programmable N-pixel micromirror or mask located in a return path of a received reflected scene spot with a jth measurement kernel Aj of the measurement kernels A1 to AM, measuring y, wherein y is an inner product of a scene reflectivity f(α,β) with the measurement kernel Aj for each range bin ri, wherein α and β are azimuth and elevation angles, respectively, repeating programming the programmable N-pixel micromirror or mask and measuring y for each measurement kernel A1 to AM, and forming a reconstructed image using the measured y vector, wherein forming the reconstructed image includes using compressive sensing or Moore-Penrose reconstruction.
摘要翻译：一种用于增加由来自照明点的接收光形成的图像的分辨率的方法包括测量用于测量内核A1至AM的ay矢量，其中M是测量内核的数量，测量包括编程可编程N像素微镜或掩模位于与测量内核A1至AM的第j个测量核心Aj的接收的反射场景点的返回路径中，测量y，其中y是场景反射率f（α，＆bgr）与测量内核Aj的内积对于每个范围bin ri，其中α和＆bgr; 分别是方位角和仰角，重复编程可编程N像素微镜或掩模，并测量每个测量核A1至AM的y，以及使用测量的y向量形成重建图像，其中形成重建图像包括使用压缩感测或摩尔 - 彭罗斯重建。

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