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    • 7. 发明授权
    • Voltage controlled oscillator
    • 压控振荡器
    • US08283989B2
    • 2012-10-09
    • US12924468
    • 2010-09-28
    • Tatsunori OnzukaJunichiro YamakawaToshimasa TsudaKenji KawahataHiroshi Hoshigami
    • Tatsunori OnzukaJunichiro YamakawaToshimasa TsudaKenji KawahataHiroshi Hoshigami
    • H03B5/12
    • H03B5/1243H03B5/1203H03B2200/0008
    • There is provided a voltage controlled oscillator using a Colpitts circuit capable of suppressing deterioration (decrease) in variable range (adjustable range) of an output frequency due to the influence of an inductance component on a conductive line, which connects a connection point between two capacitors of a feedback part and an emitter of a transistor. In a VCO using a Colpitts circuit, with respect to capacitors 22, 23 of a feedback part 2, a first feedback capacitance element (capacitor) 22 is disposed so as to directly couple a terminal for base (connection part 7) and a terminal for emitter on a base substrate 5, to which a terminal part 8 (T1) extending from a base of a transistor 21 and a terminal part 8 (T2) extending from an emitter of the transistor 21 are fitted, respectively, and a second feedback capacitance element (capacitor) 23 is disposed so as to directly couple the terminal for emitter and the terminal for grounding (ground electrode 51).
    • 提供了一种压控振荡器,其使用Colpitts电路,其能够抑制由于导电线上的电感分量的影响而导致的输出频率的可变范围(可调节范围)的变化(减小),连接两个电容器之间的连接点 的晶体管的反馈部分和发射极。 在使用Colpitts电路的VCO中,相对于反馈部2的电容器22,23,设置第一反馈电容元件(电容器)22,以直接将基座(连接部7)的端子和用于 分别从晶体管21的基极延伸的端子部8(T1)和从晶体管21的发射极延伸的端子部8(T2)分别嵌合在基极基板5上的发射极和第二反馈电容 元件(电容器)23被配置为直接耦合发射极端子和接地端子(接地电极51)。
    • 8. 发明申请
    • SWITCHED CAPACITOR CIRCUIT FOR A VOLTAGE CONTROLLED OSCILLATOR
    • 用于电压控制振荡器的开关电容器电路
    • US20110267149A1
    • 2011-11-03
    • US12769046
    • 2010-04-28
    • Vishal P. Trivedi
    • Vishal P. Trivedi
    • H03B5/12
    • H03B5/1218H03B5/1231H03B5/1243H03B5/1265H03B2200/0008
    • A switched capacitor circuit for use at at least one operating frequency is provided. The switched capacitor may include an inductive element having a first terminal coupled to a switching voltage and a second terminal. The switched capacitor circuit may further include a hetero-junction bipolar transistor (HBT) having a base terminal coupled to the second terminal of the inductive element, a first conducting terminal, and a second conducting terminal coupled to a voltage supply terminal. The switched capacitor circuit may further include a capacitor having a first terminal coupled to the first conducting terminal of the HBT and a second terminal coupled to a node, wherein a capacitance value at the node is a function of the switching voltage, and wherein the inductive element is configured such that a combined impedance of an impedance of the capacitor, an impedance of the HBT, and an impedance of inductive element resonates at the at least one operating frequency only when the HBT is substantially non-conducting.
    • 提供了以至少一个工作频率使用的开关电容器电路。 开关电容器可以包括具有耦合到开关电压的第一端子和第二端子的电感元件。 开关电容器电路还可以包括具有耦合到电感元件的第二端子的基极端子,耦合到电压端子的第一导电端子和第二导通端子的异质结双极晶体管(HBT)。 开关电容器电路还可以包括具有耦合到HBT的第一导电端子的第一端子和耦合到节点的第二端子的电容器,其中节点处的电容值是开关电压的函数,并且其中感应 元件被配置为使得仅当HBT基本上不导通时,电容器的阻抗,HBT的阻抗和感应元件的阻抗的组合阻抗在至少一个工作频率处共振。
    • 9. 发明授权
    • Secondary vibration damping type crystal oscillator circuit
    • 二次振动阻尼型晶体振荡电路
    • US08044730B2
    • 2011-10-25
    • US12462364
    • 2009-08-03
    • Junichi Arai
    • Junichi Arai
    • H03B5/32
    • H03B5/362H03B1/04H03B2200/0008H03B2202/05
    • A secondary vibration damping type crystal oscillator circuit is formed as a Colpitts type, in which a crystal unit is connected between base and collector terminals, a first capacitor is connected between emitter and collector terminals, and a second capacitor is connected between emitter and base terminals of a oscillating transistor. A region between the emitter and collector terminals or between the emitter and base terminals includes a reactance parallel circuit, in which an LC series circuit is connected in parallel to the first or second capacitor. The reactance parallel circuit has resonant characteristics that the reactance parallel circuit is made capacitive at an oscillating frequency in principal vibration mode of the crystal unit as an oscillating frequency, and a resonant frequency of the LC series circuit corresponds to the vibrational frequency in secondary vibration mode that is close to the principal vibration mode.
    • 二次振动阻尼型晶体振荡电路形成为Colpitts型,其中晶体单元连接在基极和集电极端子之间,第一电容器连接在发射极和集电极端子之间,第二电容器连接在发射极和基极端子之间 的振荡晶体管。 发射极和集电极端子之间或发射极和基极端子之间的区域包括电抗并联电路,其中LC串联电路并联连接到第一或第二电容器。 电抗并联电路具有谐振特性,使得电抗并联电路在振荡频率下以振荡频率在晶体单元的主振动模式下为振荡频率,并且LC串联电路的谐振频率对应于二次振动模式中的振动频率 接近主振动模式。