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1. 发明申请

US20140368271A1 AMPLIFIER CIRCUIT WITH OVERSHOOT SUPPRESSION 审中-公开
标题翻译：放大器电路与OVERSHOOT抑制
公开(公告)号：US20140368271A1
公开(公告)日：2014-12-18
申请号：US14474315
申请日：2014-09-02
申请人： Novatek Microelectronics Corp.
发明人： Chia-Wei Su , Ju-Lin Huang , Keko-Chun Liang
IPC分类号： H03F3/21 , H03F3/45 , H03F3/26
CPC分类号： H03F3/211 , H03F1/52 , H03F1/523 , H03F3/265 , H03F3/303 , H03F3/45 , H03F3/45071 , H03F3/45475 , H03F2200/444 , H03F2203/21178 , H03F2203/45218
摘要： An amplifier circuit with overshoot suppress scheme including an input amplifier, an output amplifier, and a diode is provided. A first and a second input ends of the output amplifier are coupled to an output of the input amplifier. The diode is coupled between an output end and the first input end of the output amplifier. When the voltage difference between the output and the input ends of the output amplifier is greater then the barrier voltage of the diode, the diode is turned on, so that the output end of the output amplifier is coupled to the input end of the output amplifier. In the transient state, it rapidly smoothes the overshoot signal. In the steady state, the diode is cut off to maintain the normal operation of the operational amplifier.
摘要翻译：提供了具有输入放大器，输出放大器和二极管的具有过冲抑制方案的放大器电路。输出放大器的第一和第二输入端耦合到输入放大器的输出端。二极管耦合在输出端和输出放大器的第一输入端之间。当输出放大器的输出端和输入端之间的电压差大于二极管的势垒电压时，二极管导通，使得输出放大器的输出端耦合到输出放大器的输入端。在瞬态状态下，它会快速平滑过冲信号。在稳定状态下，二极管被切断以保持运算放大器的正常工作。

2. 发明申请

US20120119834A1 AMPLIFIER CIRCUIT WITH OVERSHOOT SUPPRESSION 有权
标题翻译：放大器电路与OVERSHOOT抑制
公开(公告)号：US20120119834A1
公开(公告)日：2012-05-17
申请号：US13339373
申请日：2011-12-29
申请人： Chia-Wei Su , Ju-Lin Huang , Keko-Chun Liang
发明人： Chia-Wei Su , Ju-Lin Huang , Keko-Chun Liang
IPC分类号： H03F3/45
CPC分类号： H03F3/211 , H03F1/52 , H03F1/523 , H03F3/265 , H03F3/303 , H03F3/45 , H03F3/45071 , H03F3/45475 , H03F2200/444 , H03F2203/21178 , H03F2203/45218
摘要： An amplifier circuit with overshoot suppress scheme including an input amplifier, an output amplifier, and a diode is provided. A first and a second input ends of the output amplifier are coupled to a differential output pair of the input amplifier. The diode is coupled between an output end and the first input end of the output amplifier. When the voltage difference between the output and the input ends of the output amplifier is greater then the barrier voltage of the diode, the diode is turned on, so that the output end of the output amplifier is coupled to the input end of the output amplifier. In the transient state, it rapidly smoothes the overshoot signal. In the steady state, the diode is cut off to maintain the normal operation of the operational amplifier.
摘要翻译：提供了具有输入放大器，输出放大器和二极管的具有过冲抑制方案的放大器电路。输出放大器的第一和第二输入端耦合到输入放大器的差分输出对。二极管耦合在输出端和输出放大器的第一输入端之间。当输出放大器的输出端和输入端之间的电压差大于二极管的势垒电压时，二极管导通，使得输出放大器的输出端耦合到输出放大器的输入端。在瞬态状态下，它会快速平滑过冲信号。在稳定状态下，二极管被切断以保持运算放大器的正常工作。

3. 发明授权

US08072001B2 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same 有权
标题翻译：异质结双极晶体管及其制造方法及使用其的功率放大器
公开(公告)号：US08072001B2
公开(公告)日：2011-12-06
申请号：US12879205
申请日：2010-09-10
申请人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
发明人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
IPC分类号： H01L29/73
CPC分类号： H01L29/7304 , H01L27/0605 , H01L29/7371 , H03F2200/444 , H03F2203/21178
摘要： A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
摘要翻译：一种异质结双极晶体管，其具有InGaP作为发射极层，并且具有可靠的导电和热稳定性，其中GaAs层插入在InGaP发射极层和AlGaAs镇流电阻层之间，以防止从基极层反向注入的空穴扩散，达到AlGaAs镇流电阻层。

4. 发明授权

US07939857B1 Composite device having three output terminals 有权
标题翻译：复合装置具有三个输出端子
公开(公告)号：US07939857B1
公开(公告)日：2011-05-10
申请号：US12546112
申请日：2009-08-24
申请人： Michael A Wyatt
发明人： Michael A Wyatt
IPC分类号： H01L27/118
CPC分类号： H03F1/223 , H03F1/22 , H03F2200/366 , H03F2200/75 , H03F2203/21178 , H03K17/127 , H03K17/567
摘要： A composite device includes a depletion mode FET coupled to a bipolar transistor. The FET includes gate, drain and source terminals, and the bipolar transistor includes base, collector and emitter terminals. The collector terminal of the bipolar transistor and the source terminal of the depletion mode FET are directly connected to each other. Additionally, the emitter terminal of the bipolar transistor and the gate terminal of the depletion mode FET are directly connected to each other. The voltage between the collector and emitter terminals, VCE, is configured to bias the depletion mode FET. The VCE voltage has a value that is equal and opposite to a voltage VGS between the gate and source terminals of the depletion mode FET.
摘要翻译：复合器件包括耦合到双极晶体管的耗尽型FET。 FET包括栅极，漏极和源极端子，双极晶体管包括基极，集电极和发射极端子。双极晶体管的集电极端子和耗尽型FET的源极端子彼此直接连接。此外，双极晶体管的发射极端子和耗尽型FET的栅极端子彼此直接连接。集电极和发射极端子之间的电压VCE被配置为偏置耗尽型FET。 VCE电压具有与耗尽型FET的栅极和源极端子之间的电压VGS相等并相反的值。

5. 发明申请

US20100301948A1 Low Noise Amplifier and Mixer 有权
标题翻译：低噪声放大器和混频器
公开(公告)号：US20100301948A1
公开(公告)日：2010-12-02
申请号：US12551038
申请日：2009-08-31
申请人： Bharadwaj Amrutur , Kannan Aryaperumal Sankaragomathi
发明人： Bharadwaj Amrutur , Kannan Aryaperumal Sankaragomathi
IPC分类号： H03F3/04
CPC分类号： H03F3/195 , H03F1/0261 , H03F1/0277 , H03F1/223 , H03F1/3205 , H03F3/211 , H03F3/72 , H03F2200/18 , H03F2200/222 , H03F2200/294 , H03F2200/451 , H03F2200/555 , H03F2203/21142 , H03F2203/21178 , H03F2203/7236 , H03G1/0088 , H03G3/3052
摘要： A low noise amplifier (LNA) system with controllable linearity and noise figure versus power consumption is provided. The system comprises two control inputs for tuning. One input controls an effective transistor width, and the other input controls bias current. Changes to the effective transistor width alter a gain that is applied to a signal, and changes to the bias current alter a power consumption of the system. For more stringent signal specifications, an impedance matched inductive degeneration variation of the LNA is provided.
摘要翻译：提供了具有可控线性度和噪声系数与功耗的低噪声放大器（LNA）系统。该系统包括两个用于调谐的控制输入。一个输入控制有效的晶体管宽度，另一个输入控制偏置电流。对有效晶体管宽度的改变会改变施加到信号的增益，并且改变偏置电流会改变系统的功耗。对于更严格的信号规范，提供LNA的阻抗匹配的电感退化变化。

6. 发明授权

US07417495B2 Reconfigurable frequency filter 失效
标题翻译：可重构频率滤波器
公开(公告)号：US07417495B2
公开(公告)日：2008-08-26
申请号：US11492983
申请日：2006-07-26
申请人： Qiang Li
发明人： Qiang Li
IPC分类号： H03K5/00
CPC分类号： H03F3/72 , H03F3/211 , H03F2200/111 , H03F2203/21178 , H03F2203/7209 , H03F2203/7236 , H03H11/04 , H03H11/24
摘要： There are various mobile communication standards such as GSM, EDGE, and W-CDMA. For a GSM or EDGE system, a receiver must be configured to work with an IF signal with a center frequency and bandwidth of 200 KHz. For WCDMA system, the same receiver must be configured to work with an IF signal with a center frequency of 600 KHz to 1000 KHz and band width of 2000 KHz. Accordingly, a configurable frequency IF filter with the capability to operate with multiple standards is provided.
摘要翻译：有各种移动通信标准，如GSM，EDGE和W-CDMA。对于GSM或EDGE系统，接收机必须配置为使用中频和200 KHz带宽的IF信号。对于WCDMA系统，同一接收机必须配置为使用中频为600KHz至1000KHz，带宽为2000KHz的IF信号。因此，提供了具有多个标准操作能力的可配置频率IF滤波器。

7. 发明申请

US20060261897A1 Radio frequency power amplifier 失效
标题翻译：射频功率放大器
公开(公告)号：US20060261897A1
公开(公告)日：2006-11-23
申请号：US11435891
申请日：2006-05-18
申请人： Shingo Enomoto , Masahiko Inamori , Haruhiko Koizumi , Kazuki Tateoka , Hirokazu Makihara , Shingo Matuda , Katuhiko Kawashima
发明人： Shingo Enomoto , Masahiko Inamori , Haruhiko Koizumi , Kazuki Tateoka , Hirokazu Makihara , Shingo Matuda , Katuhiko Kawashima
IPC分类号： H03F3/68
CPC分类号： H03F1/30 , H03F3/189 , H03F3/20 , H03F2203/21178
摘要： A radio frequency signal RF is input to a base of each of transistors TR1 through TRn via a corresponding capacitor among capacitors C1 through Cn, is amplified, and is output from a collector of each of the transistors TR1 through TRn. An emitter of each of the transistors TR1 through TRn is grounded. A bias voltage DC given from a bias circuit Bias is supplied to the base of each of the transistors TR1 through TRn via a corresponding resistor among resistors Ra1 through Ran. A signal line for the bias voltage DC is connected to an input line for the radio frequency signal RF via the bridge resistor R in a direct current manner.
摘要翻译：射频信号RF通过电容器C 1至C n中的相应电容器被输入到晶体管TR1至TRn中的每一个的基极，被放大，并从晶体管TR1至TRn中的每一个的集电极输出。每个晶体管TR 1至TR n的发射极接地。从偏置电路偏置电压给出的偏置电压DC通过电阻器Ra 1至Ran中的相应电阻器提供给每个晶体管TR1至TRn的基极。用于偏置电压DC的信号线通过桥式电阻器R以直流方式连接到用于射频信号RF的输入线。

8. 发明申请

US20050156194A1 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same 有权
标题翻译：异质结双极晶体管及其制造方法及使用其的功率放大器
公开(公告)号：US20050156194A1
公开(公告)日：2005-07-21
申请号：US11019270
申请日：2004-12-23
申请人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
发明人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
IPC分类号： H01L21/331 , H01L21/822 , H01L21/8222 , H01L27/04 , H01L27/06 , H01L27/082 , H01L29/73 , H01L29/737 , H01L29/861 , H03F3/24 , H01L29/739
CPC分类号： H01L29/7304 , H01L27/0605 , H01L29/7371 , H03F2200/444 , H03F2203/21178
摘要： A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
摘要翻译：一种异质结双极晶体管，其具有InGaP作为发射极层，并且具有可靠的导电和热稳定性，其中GaAs层插入在InGaP发射极层和AlGaAs镇流电阻层之间，以防止从基极层反向注入的空穴扩散，达到AlGaAs镇流电阻层。

9. 发明授权

US06861906B2 High-frequency semiconductor device 有权
标题翻译：高频半导体器件
公开(公告)号：US06861906B2
公开(公告)日：2005-03-01
申请号：US10204446
申请日：2001-05-11
申请人： Kazutomi Mori , Shintaro Shinjo , Kousei Maemura , Teruyuki Shimura , Kazuhiko Nakahara , Tadashi Takagi
发明人： Kazutomi Mori , Shintaro Shinjo , Kousei Maemura , Teruyuki Shimura , Kazuhiko Nakahara , Tadashi Takagi
IPC分类号： H01L27/06 , H03F3/19 , H03F3/21 , H03F3/68
CPC分类号： H01L27/0605 , H03F3/19 , H03F3/211 , H03F2203/21178
摘要： A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.
摘要翻译：根据本发明的高频半导体器件实现了噪声特性的降低和增益的降低的改善，并且在抑制电流到多焦HBT的浓度的同时，提高了功率效率的降低。在构成放大器10的第一级和输出级的多画面HBT中，构成对应于第一级的多画面HBT 12的基本HBT 14分别由连接到相应发射极的HBT 14a和发射极电阻14b组成而构成与输出级相对应的多功能HBT16的基本HBT 18分别由连接到HBT 18a的相应基座的HBT 18a和基极电阻18c组成。根据本发明的高频半导体器件可用作卫星通信，地面微波通信，移动通信等中使用的高输出功率放大器。

10. 发明申请

US20040061557A1 Amplifier power control circuit 有权
标题翻译：放大器功率控制电路
公开(公告)号：US20040061557A1
公开(公告)日：2004-04-01
申请号：US10671052
申请日：2003-09-24
申请人： TriQuint Semiconductor, Inc.
发明人： Stephen P. Bachhuber , Thomas R. Apel , Robert E. Knapp
IPC分类号： H03G003/10
CPC分类号： H03F3/19 , H03F1/302 , H03F2203/21178
摘要： A sense transistor is placed in a current path between a reference voltage source and ground. The base terminal of the sense transistor is coupled to the base terminal of an amplifying transistor. Thus, current in the sense transistor corresponds to signal power output by the amplifying transistor. The sense current causes a sense voltage at the collector terminal of the sense transistor. This sense voltage is applied to one input of an error amplifier. The other error amplifier input receives a power control voltage. The error amplifier output is routed back to the base terminal of the amplifying transistor in a negative feedback loop, thereby keeping the power of the signal output by the amplifying transistor at a constant level. In some embodiments the error amplifier output is made independent of changes in the reference voltage. Multiple pairs of corresponding amplifying and sense transistors can be used.
摘要翻译：感测晶体管被放置在参考电压源和地之间的电流路径中。感测晶体管的基极端子连接到放大晶体管的基极端子。因此，感测晶体管中的电流对应于由放大晶体管输出的信号功率。感测电流在感测晶体管的集电极端产生感测电压。该感测电压被施加到误差放大器的一个输入端。另一个误差放大器输入接收功率控制电压。误差放大器输出在负反馈环路中被路由回到放大晶体管的基极端子，从而将放大晶体管输出的信号的功率保持在恒定水平。在一些实施例中，误差放大器输出独立于参考电压的变化。可以使用多对相应的放大和检测晶体管。

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