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1. 发明授权

US09831850B2 Acoustic wave device with a piezoelectric substrate that is not located in some regions 有权
公开(公告)号：US09831850B2
公开(公告)日：2017-11-28
申请号：US14949535
申请日：2015-11-23
申请人： TAIYO YUDEN CO., LTD.
发明人： Takuma Kuroyanagi
IPC分类号： H03H9/10 , H03H9/25 , H03H9/64 , H03H9/02 , H03H9/00
CPC分类号： H03H9/1071 , H03H9/02559 , H03H9/02574 , H03H9/02834 , H03H9/02897 , H03H9/02992 , H03H9/6483 , H03H2009/0019
摘要： An acoustic wave device includes: a support substrate; a piezoelectric substrate bonded to the support substrate; a first acoustic wave element formed on the piezoelectric substrate; a frame formed on the support substrate to surround the first acoustic wave element; and a substrate formed on the frame so that a cavity to which the first acoustic wave element is exposed is formed above the piezoelectric substrate, wherein a difference in linear expansion coefficient between the support substrate and the substrate in a first direction in a surface direction of the piezoelectric substrate is less than a difference in linear expansion coefficient between the support substrate and the piezoelectric substrate in the first direction, and the piezoelectric substrate remains in a region where the first acoustic wave element is formed and is removed in a region where the frame is formed.

2. 发明申请

US20160248398A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20160248398A1
公开(公告)日：2016-08-25
申请号：US14949535
申请日：2015-11-23
申请人： TAIYO YUDEN CO., LTD.
发明人： Takuma KUROYANAGI
IPC分类号： H03H9/02
CPC分类号： H03H9/1071 , H03H9/02559 , H03H9/02574 , H03H9/02834 , H03H9/02897 , H03H9/02992 , H03H9/6483 , H03H2009/0019
摘要： An acoustic wave device includes: a support substrate; a piezoelectric substrate bonded to the support substrate; a first acoustic wave element formed on the piezoelectric substrate; a frame formed on the support substrate to surround the first acoustic wave element; and a substrate formed on the frame so that a cavity to which the first acoustic wave element is exposed is formed above the piezoelectric substrate, wherein a difference in linear expansion coefficient between the support substrate and the substrate in a first direction in a surface direction of the piezoelectric substrate is less than a difference in linear expansion coefficient between the support substrate and the piezoelectric substrate in the first direction, and the piezoelectric substrate remains in a region where the first acoustic wave element is formed and is removed in a region where the frame is formed.
摘要翻译：声波装置包括：支撑基板; 键合到所述支撑基板的压电基板; 形成在所述压电基板上的第一声波元件; 形成在所述支撑基板上以围绕所述第一声波元件的框架; 以及形成在所述框架上的基板，使得在所述压电基板的上方形成有所述第一声波元件露出的空腔，其中，所述支撑基板与所述基板在所述基板的表面方向上的第一方向上的线膨胀系数的差压电基板小于第一方向上的支撑基板和压电基板之间的线膨胀系数的差异，并且压电基板保持在形成第一声波元件的区域中，并且在框架形成了。

3. 发明授权

US08120230B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US08120230B2
公开(公告)日：2012-02-21
申请号：US12784564
申请日：2010-05-21
申请人： Tsutomu Takai , Norihiro Hayakawa , Taro Nishino
发明人： Tsutomu Takai , Norihiro Hayakawa , Taro Nishino
IPC分类号： H03H9/25
CPC分类号： H03H9/02984 , H01L2224/05001 , H01L2224/05568 , H01L2224/0557 , H01L2224/16225 , H01L2924/00014 , H01L2924/181 , H03H9/02937 , H03H9/059 , H03H9/1078 , H03H9/1085 , H03H2009/0019 , H01L2924/00012 , H01L2224/05599 , H01L2224/05099
摘要： An acoustic wave device includes an acoustic wave element including an IDT electrode provided on a substrate, and a protective film arranged to cover the acoustic wave element so as to stabilize characteristics. The protective film is a silicon nitride film composed of silicon and nitrogen as main components and when a composition ratio of the silicon to the nitrogen is represented by 1:X, X is about 1.15 or less.
摘要翻译：声波装置包括包括设置在基板上的IDT电极的声波元件和布置成覆盖声波元件以保持特性的保护膜。保护膜是以硅和氮为主要成分的氮化硅膜，当硅与氮的组成比由1：X表示时，X为1.15以下。

4. 发明申请

US20060091977A1 Duplexer 有权
公开(公告)号：US20060091977A1
公开(公告)日：2006-05-04
申请号：US11262765
申请日：2005-11-01
申请人： Shogo Inoue , Yasuhide Iwamoto , Takashi Matsuda , Masanori Ueda
发明人： Shogo Inoue , Yasuhide Iwamoto , Takashi Matsuda , Masanori Ueda
IPC分类号： H03H9/72
CPC分类号： H03H9/72 , H03H9/0576 , H03H9/725 , H03H2009/0019
摘要： A duplexer that includes: a transmission filter and a reception filter that are connected to a common terminal; and a reactance circuit that is connected to at least one of the transmission filter and the reception filter. The reactance circuit includes an insulating substrate, lumped-constant inductors, and at least one capacitor. The lumped-constant inductors and the capacitor are formed directly on the surface of the insulating substrate.

5. 发明授权

US4365219A In-line surface acoustic wave filter assembly module and method of making same 失效
标题翻译：在线表面声波滤波器组件模块及其制作方法
公开(公告)号：US4365219A
公开(公告)日：1982-12-21
申请号：US238758
申请日：1981-02-27
申请人： Bernard D. Nathan
发明人： Bernard D. Nathan
IPC分类号： H03H3/08 , H03H9/02 , H03H9/05 , H03H9/64 , H03H9/25
CPC分类号： H03H9/02913 , H03H3/08 , H03H9/0542 , H03H9/64 , H03H2009/0019 , Y10T29/42
摘要： A SAW filter assembly module comprising a plurality of series in-line SAW filter devices and effective to provide substantial isolation of output from input of the module. Separate isolated conductive ground areas are applied to the surface of an insulative substrate upon which the SAW filter devices are placed with a portion of certain areas extending to a terminal side of the substrate and each SAW device is electrically connected to a respective conductive ground area. A separate inter-SAW ground area is provided between each set of device ground areas. A conductive input area of a first SAW filter is located most distant from the conductive output area of a subsequent SAW filter with the plurality of conductive ground areas located therebetween to increase selectivity. A conductive shield is secured to and electrically connected to a ground area between the SAW filter devices and is positioned to block radiative signals between the devices. A shunt inductor is connected between the inter-SAW ground area and in inter-SAW signal path conductive area to increase selectivity with low insertion loss. Bent wire straps, of flat or other essentially non-cylindrical cross-section may be used to make electrical connections between the electrodes of the transducers of each SAW to the appropriate respective conductive areas of the substrate. An insulative cover is positioned over the filter assembly module with portions of the conductive areas extending thereunder toward the terminal side of the substrate.
摘要翻译：一种SAW滤波器组件模块，包括多个串联的SAW滤波器装置，并且有效地提供对模块的输入的输出的实质隔离。隔离的导电接地区域被施加到绝缘衬底的表面上，SAW绝缘衬底放置有SAW滤波器器件，其中某些区域的一部分延伸到衬底的端子侧，并且每个SAW器件电连接到相应的导电接地区域。在每组设备接地区域之间提供单独的SAW间接地区域。第一SAW滤波器的导电输入区域位于距后续SAW滤波器的导电输出区域最远的位置，其中多个导电接地区域位于其间，以增加选择性。导电屏蔽件固定到SAW滤波器装置之间并与其电连接，并被定位成阻挡装置之间的辐射信号。分流电感连接在SAW间接地区域和SAW间信号路径导电区域之间，以增加低插入损耗的选择性。扁平或其他基本上非圆柱形横截面的弯曲电缆带可用于使每个SAW的换能器的电极之间的电连接到基板的适当的各个导电区域。绝缘盖定位在过滤器组件模块上方，其中导电区域的一部分延伸到衬底的终端侧。

6. 发明授权

US09633873B2 Electronic device 有权
公开(公告)号：US09633873B2
公开(公告)日：2017-04-25
申请号：US14326071
申请日：2014-07-08
申请人： TAIYO YUDEN CO., LTD.
发明人： Motoi Yamauchi , Osamu Kawachi
IPC分类号： H05K7/00 , H01L21/56 , H03H9/10 , H01L23/00 , H05K1/02 , H05K1/14 , H05K3/28 , H05K3/30 , H05K3/34 , H03H9/00 , H03H9/02
CPC分类号： H01L21/561 , H01L23/04 , H01L24/95 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/12042 , H01L2924/15174 , H01L2924/15787 , H01L2924/181 , H03H9/02913 , H03H9/1007 , H03H9/1085 , H03H2009/0019 , H05K1/0209 , H05K1/0216 , H05K1/0243 , H05K1/141 , H05K3/284 , H05K3/303 , H05K3/3436 , H05K2201/0305 , H05K2201/049 , H05K2201/068 , H05K2201/10068 , H05K2201/10371 , H05K2201/10537 , H05K2201/1056 , H05K2201/10674 , H05K2203/1316 , H01L2924/00
摘要： An electronic device includes: a wiring substrate; a plurality of device chips that are flip-chip mounted on an upper surface of the wiring substrate through bumps, have gaps which expose the bumps between the device chips and the upper surface of the wiring substrate, and include at least one device chip that has a substrate having a thermal expansion coefficient more than a thermal expansion coefficient of the wiring substrate; a junction substrate that is joined to the plurality of device chips, and has a thermal expansion coefficient equal to or less than the thermal expansion coefficient of the substrate included in the at least one device chip; and a sealer that covers the junction substrate, and seals the plurality of device chips.

7. 发明授权

US09537464B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US09537464B2
公开(公告)日：2017-01-03
申请号：US14519852
申请日：2014-10-21
申请人： Seiko Epson Corporation
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25 , H03H9/125 , H03B5/32 , H03H9/02 , H03H9/64 , H03H9/00
CPC分类号： H03H9/02551 , H03B5/326 , H03H9/02653 , H03H9/02661 , H03H9/02669 , H03H9/02677 , H03H9/64 , H03H2009/0019
摘要： A surface acoustic wave resonator includes an IDT that is disposed on a quartz crystal substrate of Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, ψ) and excites a surface acoustic wave resonant in an upper part of a stop-band of the IDT, and inter-electrode finger grooves that are acquired by depressing the substrate located between electrode fingers configuring the IDT. The wavelength of the surface acoustic wave, the depth of the inter-electrode finger grooves, the line occupancy ratio of the IDT, and the film thickness of the electrode fingers of the IDT are set in correspondence with one another.
摘要翻译：表面声波谐振器包括设置在欧拉角（-1.5°≤φ≤1.5°，117°≤θ≤42°，ψ）的石英晶体基板上的IDT，并激发在上部的谐振的表面声波的IDT的阻带，以及通过按压位于构成IDT的电极指之间的基板而获取的电极间的指槽。将IDT的表面声波的波长，电极指槽的深度，IDT的线占有率和电极指的膜厚设置成彼此对应。

8. 发明申请

US20150116049A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US20150116049A1
公开(公告)日：2015-04-30
申请号：US14519852
申请日：2014-10-21
申请人： Seiko Epson Corporation
发明人： Kunihito YAMANAKA
IPC分类号： H03H9/64 , H03B5/32
CPC分类号： H03H9/02551 , H03B5/326 , H03H9/02653 , H03H9/02661 , H03H9/02669 , H03H9/02677 , H03H9/64 , H03H2009/0019
摘要： A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°); one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is λ, and a depth of the grooves is G, “0.01λ≦G” is satisfied.
摘要翻译：提供表面声波（SAW）谐振器和SAW振荡器以及包括谐振器的电子设备。一种SAW谐振器包括：使用欧拉角（-1.5°＆amp; nlE; 1.5°，117°＆nlE;＆amp; Thetas;＆nlE; 142°，42.79°＆nlE; |ψ|＆nlE的石英晶体基板激励SAW的IDT ; 49.57°）; 一对反射单元布置成允许IDT设置在其间; 以及通过按压位于电极指之间的石英晶体衬底获得的凹槽。当SAW的波长为λ，凹槽的深度为G时，满足“0.01λ＆nlE; G”。

9. 发明申请

US20110309897A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC APPARATUS 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US20110309897A1
公开(公告)日：2011-12-22
申请号：US13162162
申请日：2011-06-16
申请人： Kunihito YAMANAKA
发明人： Kunihito YAMANAKA
IPC分类号： H03H9/19
CPC分类号： H03H9/02551 , H03B5/326 , H03H9/02653 , H03H9/02661 , H03H9/02669 , H03H9/02677 , H03H9/64 , H03H2009/0019
摘要： A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (−1.5°≦φ≦1/5°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°; one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is λ, and a depth of the grooves is G, “0.01λ≦G” is satisfied.
摘要翻译：提供表面声波（SAW）谐振器和SAW振荡器以及包括谐振器的电子设备。一种SAW谐振器包括：使用欧拉角（-1.5°＆nlE;＆phl;＆lt; 1/5°，117°＆nlE;＆amp; thetas;＆nlE; 142°，42.79°＆nlE; |ψ的石英晶体基板激励SAW的IDT |＆nlE; 49.57°;一对反射单元，其布置成允许IDT布置在其间;通过按压位于电极指之间的石英晶体基板获得的凹槽当SAW的波长为λ，深度为槽为G，“0.01λ＆nlE; G”满足要求。

10. 发明授权

US07859363B2 Component comprising at least one filter that operates with acoustic waves 有权
标题翻译：组件包括用声波操作的至少一个滤波器
公开(公告)号：US07859363B2
公开(公告)日：2010-12-28
申请号：US12067728
申请日：2006-09-19
申请人： Juergen Kiwitt , Maximilian Pitschi
发明人： Juergen Kiwitt , Maximilian Pitschi
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/0028 , H03H9/02834 , H03H9/6433 , H03H9/725 , H03H2009/0019
摘要： A component includes a first filter configured to work with acoustic waves. The first filter includes a first sub-filter on a first chip and a second sub-filter on a second chip separate from the first chip. The first filter if a different type of filter, has a different layer structure, or has a different layer thicknesses for at least one layer in comparison to the second filter.
摘要翻译：组件包括被配置为处理声波的第一滤波器。第一滤波器包括在第一芯片上的第一子滤波器和与第一芯片分离的第二芯片上的第二子滤波器。如果不同类型的过滤器具有不同的层结构，或者与第二过滤器相比，对于至少一个层具有不同的层厚度，则第一过滤器。

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