专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20190181856A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190181856A1
公开(公告)日：2019-06-13
申请号：US16278337
申请日：2019-02-18
申请人： DENSO CORPORATION
发明人： Yoshitaka KATO , Kenji KOMIYA , Yusuke SHINDO , Yoshinori HAYASHI , Kenichi WAKABAYASHI
IPC分类号： H03K17/16 , H02M1/08 , H02M1/32 , H02M7/537
CPC分类号： H03K17/166 , H02M1/08 , H02M1/32 , H02M3/158 , H02M7/537 , H02M7/53875 , H02M2001/0009 , H02M2001/007 , H03K2217/0081
摘要： A semiconductor device turns on and off a power switching device having a gate terminal and output terminals between which an output current is produced by a gate voltage applied to the gate terminal. The semiconductor device includes: an output current detector detecting a current value correlated with the output current; a voltage detector detecting a voltage across the output terminals of the power switching device; a clamp circuit clamping the gate voltage at a predetermined value; and a controller controlling the clamp circuit to adjust the gate voltage based on the voltage detected by the voltage detector. The controller controls the clamp circuit to set the gate voltage to be at a minimum voltage according to the detected voltage to cause the output current to be larger than a threshold current required for detecting the short circuit in the power switching device.

2. 发明申请

US20180367132A1 DRIVE CIRCUIT OF TRANSISTOR 审中-公开
公开(公告)号：US20180367132A1
公开(公告)日：2018-12-20
申请号：US16110147
申请日：2018-08-23
申请人： BYD COMPANY LIMITED
发明人： Ping FU , Fei GAO
IPC分类号： H03K17/081 , H02H9/04
CPC分类号： H03K17/08104 , H01L27/0255 , H02H9/045 , H02M1/08 , H03K17/08142 , H03K17/0822 , H03K17/163 , H03K17/166 , H03K19/0185
摘要： The present disclosure discloses a drive circuit of a transistor, including: a high-voltage power supply and a low-voltage power supply; a high-voltage power supply domain circuit and a low-voltage power supply domain circuit, where the high-voltage power supply domain circuit is connected to the high-voltage power supply; an electrostatic discharge apparatus; a level shifter circuit, wherein the level shifter circuit includes a level detection circuit, a current limiting module, a discharge module, and a switch transistor, the level detection circuit is connected to a positive electrode of the high-voltage power supply and is separately connected to the current limiting module, the discharge module, and the high-voltage power supply domain circuit, the current limiting module is further connected to a first end of the switch transistor, the discharge module is further connected to a negative electrode of the high-voltage power supply, a control end of the switch transistor is connected to the low-voltage power supply domain circuit and a second end of the switch transistor is connected to a negative electrode of the low-voltage power supply, the current limiting module is configured to limit the discharged electricity when the drive circuit performs electrostatic discharge, and the discharge module is configured to form a discharge assisting path between the negative electrode of the high-voltage power supply and the first end of the switch transistor to assist electrostatic discharge of the drive circuit.

3. 发明申请

US20180335469A1 DRIVE CIRCUIT FOR INSULATED-GATE SEMICONDUCTOR ELEMENT 审中-公开
公开(公告)号：US20180335469A1
公开(公告)日：2018-11-22
申请号：US16050281
申请日：2018-07-31
申请人： FUJI ELECTRIC CO., LTD.
发明人： Takahiro MORI
IPC分类号： G01R31/26 , H03K17/567
CPC分类号： G01R31/2619 , H03K17/0828 , H03K17/166 , H03K17/168 , H03K17/567 , H03K2017/0806
摘要： A drive circuit for an insulated-gate semiconductor element includes a current source which generates a current to be supplied to a gate of the insulated-gate semiconductor element, a current output circuit which controls supply of the current generated by the current source to the gate of the insulated-gate semiconductor element in accordance with a drive signal, an output current control circuit which controls a magnitude of the current generated by the current source in accordance with a control voltage according to an operating temperature of the insulated-gate semiconductor element, and a control voltage detection terminal which is provided in the output current control circuit and enables detection of the control voltage from outside.

4. 发明申请

US20180301977A1 SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF 审中-公开
公开(公告)号：US20180301977A1
公开(公告)日：2018-10-18
申请号：US15900501
申请日：2018-02-20
申请人： Renesas Electronics Corporation
发明人： Shingo YAMADA
IPC分类号： H02M1/088 , H03K17/16
CPC分类号： H02M1/088 , H02M7/5395 , H02M2001/0054 , H02P27/08 , H03K17/165 , H03K17/166
摘要： The invention addresses providing a semiconductor device that enables to reduce noise simultaneous with switching. A driver IC which is a semiconductor device includes a drive circuit which drives a control terminal of a PMOS drive stage which is a switching element, a noise detection circuit which detects noise in an output signal when switching (turning) the PMOS drive stage on or off, and a control circuit which control driving by the drive circuit based on the detected noise.

5. 发明申请

US20180269870A1 GATE POTENTIAL CONTROL DEVICE 审中-公开
公开(公告)号：US20180269870A1
公开(公告)日：2018-09-20
申请号：US15903242
申请日：2018-02-23
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Hidetoshi MORISHITA , Hikaru WATANABE
IPC分类号： H03K17/16 , H03K17/0812 , H03K17/687
CPC分类号： H03K17/162 , H03K17/08122 , H03K17/163 , H03K17/166 , H03K17/687
摘要： A gate potential control device configured to control potential of a gate of a main switching element is provided herein. The gate potential control device includes: a turn-on switching element and a turn-off switching element. In a turn-off operation, a main voltage between main terminals of the main switching element increases from an on-voltage to a peak value of a surge voltage and then decreases to an off-voltage. The gate potential control device is configured to keep both of the turn-on switching element and the turn-off switching element turned off in a period which is at least a part of a specific period in the turn-off operation, the specific period being from a timing after a predetermined time lapse from a timing of rise-up of the main voltage from the on-voltage to a timing at which the main voltage reaches the peak value.

6. 发明申请

US20180152102A1 Apparatus and Method of a Slope Regulator and Regulation Slope of Switching Power FETS 审中-公开
公开(公告)号：US20180152102A1
公开(公告)日：2018-05-31
申请号：US15363331
申请日：2016-11-29
申请人： Dialog Semiconductor (UK) Limited
发明人： Zakaria Mengad
IPC分类号： H02M3/156
CPC分类号： H02M3/156 , H02M3/1588 , H03F3/217 , H03F3/2171 , H03K4/00 , H03K17/16 , H03K17/166 , Y02B70/1466
摘要： In summary, a switching circuit comprising a high side (HS) switch coupled to the output, a low side (LS) switch comprising a MOSFET coupled to the output, and a slope regulator core coupled to the gate of said low side (LS) switch configured to provide control signals to said slope regulator core. In addition, a method of providing a method of a switch circuit comprising the steps the first step, (a) providing a circuit comprising a low side (LS) switch, a high side (HS) switch, and a slope regulator wherein said slope regulator comprises a fast mode, a slope regulator mode, and a hold mode, the second step (b) activating said slope regulator, the third step (c) choosing a fast mode or a slope regulation mode, the fourth step (d) applying either a fast mode or slope regulation mode; the fifth step (e) evaluating the polarity of the signal, the sixth step (f) toggle signal hold_on if the gate is low or toggle signal hold_off if the gate is high.

7. 发明授权

US09979292B2 Control method and control circuit for switch in switching power supply 有权
公开(公告)号：US09979292B2
公开(公告)日：2018-05-22
申请号：US15349696
申请日：2016-11-11
申请人： Silergy Semiconductor Technology (Hangzhou) LTD
发明人： Shaobin Zhang , Le Li , Zhiliang Hu , Yongjiang Bai
IPC分类号： H02M3/158 , H02M1/44 , H02M1/36
CPC分类号： H02M3/158 , H02M1/36 , H02M1/44 , H02M2001/0054 , H03K17/166 , Y02B70/1491
摘要： A control circuit for driving a power switch in a switching power supply can include: a start-up transistor having a drain coupled to a drain of the power switch, and a source coupled to a drain voltage detecting circuit; a gate voltage detecting circuit configured to detect a gate voltage of the power switch, to compare the gate voltage against a first threshold voltage, and to change an on drive current and an off drive current in response thereto; and the drain voltage detecting circuit being configured to detect a drain voltage of the power switch, to compare the drain voltage against a second threshold voltage, and to change the on drive current and the off drive current in response thereto.

8. 发明申请

US20180083618A1 SWITCH APPARATUS 审中-公开
公开(公告)号：US20180083618A1
公开(公告)日：2018-03-22
申请号：US15701447
申请日：2017-09-12
申请人： Asahi Kasei Microdevices Corporation
发明人： KENICHI SATO , ATSUO ITO
IPC分类号： H03K17/693 , H03K17/10 , H03K17/687 , H03K17/0412 , H03K17/16
CPC分类号： H03K17/693 , H03K17/0412 , H03K17/102 , H03K17/162 , H03K17/166 , H03K17/6874 , H03K2017/307 , H03K2017/6878 , H03K2217/0018 , H03K2217/0054
摘要： A switch apparatus is provided, including: a main switch connected between first and second terminals, and electrically connecting or disconnecting the first and second terminals according to gate voltage applied to a gate terminal; a voltage output unit having a voltage divider including a first voltage-division resistance on the first terminal side and a second voltage-division resistance on the second terminal side, and outputting voltage corresponding to voltage of the first terminal and voltage of the second terminal if the main switch is caused to enter a connected state; a buffer outputting voltage following output voltage of the voltage output unit in a connected state of the main switch; and a switch control circuit supplying first voltage corresponding to output voltage of the buffer to the gate terminal, and supplying a second voltage corresponding to output voltage of the buffer to a bulk terminal of the main switch.

9. 发明授权

US09920736B2 Ignition control circuit with current slope detection 有权
公开(公告)号：US09920736B2
公开(公告)日：2018-03-20
申请号：US15012513
申请日：2016-02-01
申请人： FAIRCHILD SEMICONDUCTOR CORPORATION
发明人： Qingquan Tang , James E. Gillberg
IPC分类号： F02P17/12 , F02P3/055 , F02P3/05 , F02P9/00 , F02P3/045 , F02P3/04 , H03K17/082 , H03K17/0812 , H03K17/16 , H03K17/691
CPC分类号： F02P17/12 , F02P3/04 , F02P3/0442 , F02P3/0453 , F02P3/051 , F02P3/053 , F02P3/055 , F02P3/0552 , F02P9/002 , H03K17/08128 , H03K17/0828 , H03K17/166 , H03K17/168 , H03K17/691
摘要： In a general aspect, a circuit for controlling operation of an ignition circuit including an insulated-gate bipolar transistor (IGBT) device can include a current slope detection circuit configured to detect a slope of a current in a primary winding of an ignition coil included in the ignition circuit and a driver circuit coupled with the current slope detection circuit. The current slope detection circuit can be further configured to, during charging of the ignition coil, if the detected slope is above a first limit, provide a first indication to the driver circuit; and, if the detected slope is below a second limit, provide a second indication to the driver circuit. The driver circuit can be configured to, in response to receiving the first indication or the second indication, modify operation of the ignition circuit.

10. 发明申请

US20180054117A1 CONTROL CIRCUIT OF SWITCHING POWER-SUPPLY DEVICE AND SWITCHING POWER-SUPPLY DEVICE 审中-公开
公开(公告)号：US20180054117A1
公开(公告)日：2018-02-22
申请号：US15241071
申请日：2016-08-19
申请人： SANKEN ELECTRIC CO., LTD.
发明人： Masaru NAKAMURA
IPC分类号： H02M3/158 , H02M1/08
CPC分类号： H02M3/158 , H02M1/08 , H02M2001/0009 , H02M2001/0029 , H03K17/166
摘要： A control circuit of a switching power-supply device that converts a first DC voltage supplied from an input power source into a second DC voltage by turning on/off a switching element connected between the input power source and an inductor and outputs the second DC voltage, the control circuit includes a drive circuit that, when a control signal to turn on the switching element is received, drives the switching element by supplying a plurality of drive voltages starting in order from a lowest drive voltage among the plurality of drive voltages, to a control terminal of the switching element.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式