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    • 5. 发明授权
    • Image sensor with charge multiplication
    • 具有电荷倍增的图像传感器
    • US08773564B2
    • 2014-07-08
    • US12967428
    • 2010-12-14
    • Christopher Parks
    • Christopher Parks
    • H04N5/335H04N5/372H04N5/378H04N5/359
    • H04N5/3594H04N5/37213H04N5/378
    • An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A bypass horizontal shift register or an amplifier can be connected to the other output of the charge directing switch.
    • 图像传感器包括电连接到像素阵列的水平移位寄存器,用于从像素阵列接收电荷分组。 非破坏性感测节点连接到水平移位寄存器的输出。 充电指示开关电连接到非破坏性感测节点。 充电指示开关包括两个输出。 充电倍增水平移位寄存器电连接到充电指示开关的一个输出端。 旁路水平移位寄存器或放大器可以连接到充电指示开关的另一个输出。
    • 9. 发明申请
    • SOLID-STATE IMAGING DEVICE AND IMAGE CAPTURE APPARATUS
    • 固态成像装置和图像捕获装置
    • US20110292262A1
    • 2011-12-01
    • US13206932
    • 2011-08-10
    • Takahiro AbiruRyoji SuzukiEiji MakinoTakayuki Usui
    • Takahiro AbiruRyoji SuzukiEiji MakinoTakayuki Usui
    • H04N5/335
    • H04N5/3594H04N5/3452H04N5/3532H04N5/3591
    • A solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
    • 一种具有像素阵列部分的固态成像装置,其中包括光电转换元件的像素以矩阵形式布置,并且通过设置相邻行的预定数量,两个或更多个或预定数量的两个或两个或更多个来清除不必要的电荷 在像素阵列部分中的相邻列,更多的是相对于单个组,并且在存储信号电荷之前通过以组为单位应用快门脉冲,并且以组为单位顺序读取信号电荷。 在固态成像装置中,在快门脉冲之前,将预快门脉冲施加到属于后续组中的至少单行或单列的像素并且与先前组相邻的像素在对于 前一组,以清除存储在像素中的不必要的费用。
    • 10. 发明申请
    • IMAGE SENSOR HAVING FOUR-TRANSISTOR OR FIVE-TRANSISTOR PIXELS WITH RESET NOISE REDUCTION
    • 具有复位噪声减少的四个半导体或五个半透明像素的图像传感器
    • US20100320516A1
    • 2010-12-23
    • US12745290
    • 2008-11-25
    • Pierre FereyreSimon Caruel
    • Pierre FereyreSimon Caruel
    • H01L27/146
    • H01L27/14603H01L27/14609H01L27/14643H04N5/357H04N5/3594
    • The invention relates to image sensors produced with CMOS technology, whose individual pixels, arranged in an array of rows and columns, each consist of a photodiode associated with a charge storage region which receives the photogenerated charge before a charge readout phase. To eliminate the risk of introducing kTC-type noise into the signal, during the reset of the storage zone at the end of a readout cycle, the invention proposes that the storage zone be divided into two parts one of which, adjacent to the reset gage, is covered by a diffused region of the same type of conductivity as the substrate in which the photodiode is formed, this region being brought to the fixed potential of the substrate, and the other of which is not covered by such a region and is not adjacent to the reset gate.
    • 本发明涉及用CMOS技术制造的图像传感器,其各自的像素排列成行和列阵列,每一个由与电荷存储区域相关联的光电二极管组成,该电荷存储区域在电荷读出阶段之前接收光生电荷。 为了消除在信号中引入kTC型噪声的风险,在读出周期结束时在存储区域的复位期间,本发明提出将存储区域分为两部分,其中之一与复位计 由与形成光电二极管的基板相同类型的导电性的扩散区域覆盖,该区域被带到基板的固定电位,另一个不被该区域覆盖,并且不是这样的区域 邻近复位门。