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1. 发明授权

US09455293B2 X-Y address type solid state image pickup device and method of producing the same 有权
公开(公告)号：US09455293B2
公开(公告)日：2016-09-27
申请号：US11981467
申请日：2007-10-30
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L21/00 , H01L27/146 , H01L31/0216 , H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

2. 发明授权

US08767104B2 Image sensor, electronic apparatus, and driving method of electronic apparatus 有权
标题翻译：电子设备的图像传感器，电子设备和驱动方法
公开(公告)号：US08767104B2
公开(公告)日：2014-07-01
申请号：US13100664
申请日：2011-05-04
申请人： Eiji Makino , Takahiro Abiru , Ryoji Suzuki , Masahiro Itoh
发明人： Eiji Makino , Takahiro Abiru , Ryoji Suzuki , Masahiro Itoh
IPC分类号： H04N3/14 , H04N5/235
CPC分类号： H04N5/3591 , H04N5/345 , H04N5/3454 , H04N5/3532 , H04N5/37455
摘要： An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
摘要翻译：公开了一种图像传感器，其具有像素阵列部分，其中以垂直和水平方向上的二维方式排列像素，并且控制滚动快门方法中的每个像素的曝光时间。传感器包括控制装置，用于通过基于地址添加量（P1，P2，P2）的操作来确定在一个水平扫描周期内的电子快门发生数，其是在一个水平扫描周期中同时执行电子快门的行数， P3，...，PN）当对应于每个像素中的电荷读数执行的用于调节曝光的电子快门的曝光调节快门中的每一个水平扫描周期的每个水平扫描周期的垂直地址移动量是表示为地址添加量（P1，P2，P3，...，PN）的重复。

3. 发明授权

US08669134B2 Method of manufacturing solid-state imaging device, solid-state imaging device, and electronic apparatus 失效
标题翻译：固态成像装置，固态成像装置和电子装置的制造方法
公开(公告)号：US08669134B2
公开(公告)日：2014-03-11
申请号：US13238013
申请日：2011-09-21
申请人： Tomomi Ito , Ryoji Suzuki , Taichi Natori
发明人： Tomomi Ito , Ryoji Suzuki , Taichi Natori
IPC分类号： H01L21/00
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/14629
摘要： Provided is a method of manufacturing a solid-state imaging device including: forming a first pattern having an independent island shape configured by an optical filter material on some of photoelectric conversion units among a plurality of photoelectric conversion units arranged on the surface of a substrate; forming a mixed color prevention layer on a side wall of the first pattern; and forming a second pattern having an independent island shape configured by an optical filter material on the rest of the photoelectric conversion units among the plurality of photoelectric conversion units while the mixed color prevention layer is closely disposed between the first pattern and the second pattern.
摘要翻译：提供一种制造固态成像装置的方法，包括：在布置在基板的表面上的多个光电转换单元之间，在一些光电转换单元上形成具有由滤光器材料构成的独立岛状的第一图案; 在所述第一图案的侧壁上形成混色防止层; 以及在所述多个光电转换单元中的所述光电转换单元的其余部分上形成具有由滤光器材料构成的独立岛状的第二图案，同时所述混色防止层紧密地布置在所述第一图案和所述第二图案之间。

4. 发明授权

US08604575B2 X-Y address type solid state image pickup device and method of producing the same 有权
公开(公告)号：US08604575B2
公开(公告)日：2013-12-10
申请号：US11981389
申请日：2007-10-30
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

5. 发明授权

US08599305B2 Solid-state imaging device and image capture apparatus with anti-blooming pre-shutter operation 有权
标题翻译：固态成像装置和具有防起霜预快门操作的图像捕获装置
公开(公告)号：US08599305B2
公开(公告)日：2013-12-03
申请号：US13206932
申请日：2011-08-10
申请人： Takahiro Abiru , Ryoji Suzuki , Eiji Makino , Takayuki Usui
发明人： Takahiro Abiru , Ryoji Suzuki , Eiji Makino , Takayuki Usui
IPC分类号： H04N5/235 , H04N5/228
CPC分类号： H04N5/3594 , H04N5/3452 , H04N5/3532 , H04N5/3591
摘要： A solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
摘要翻译：一种具有像素阵列部分的固态成像装置，其中包括光电转换元件的像素以矩阵形式布置，并且通过设置相邻行的预定数量，两个或更多个或预定数量的两个或两个或更多个来清除不必要的电荷在像素阵列部分中的相邻列，更多的是相对于单个组，并且在存储信号电荷之前通过以组为单位应用快门脉冲，并且以组为单位顺序读取信号电荷。在固态成像装置中，在快门脉冲之前，将预快门脉冲施加到属于后续组中的至少单行或单列的像素并且与先前组相邻的像素在对于前一组，以清除存储在像素中的不必要的费用。

6. 发明授权

US08519460B2 X-Y address type solid state image pickup device and method of producing the same 有权
公开(公告)号：US08519460B2
公开(公告)日：2013-08-27
申请号：US13396266
申请日：2012-02-14
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L31/102 , H01L31/107
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

7. 发明申请

US20130021511A1 SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND IMAGE PICKUP APPARATUS 有权
标题翻译：固态图像拾取装置，用于驱动固态图像拾取装置的方法和图像拾取装置
公开(公告)号：US20130021511A1
公开(公告)日：2013-01-24
申请号：US13451021
申请日：2012-04-19
申请人： Ryoji Suzuki , Takayuki Toyama , Koji Mishina , Hiroyuki Tsuchiya
发明人： Ryoji Suzuki , Takayuki Toyama , Koji Mishina , Hiroyuki Tsuchiya
IPC分类号： H04N5/335
CPC分类号： H04N5/361 , H04N5/3572 , H04N5/374
摘要： A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.
摘要翻译：固体摄像装置包括：像素阵列部，包括有效像素区域，光学黑色像素区域和有效像素区域与光学黑色像素区域之间的像素区域; 垂直驱动部，其进行驱动，使得设置在有效像素区域的垂直方向的一侧的像素区域的像素的信号被跳过，并且读取有效像素区域和光学黑色像素区域的像素的信号; 以及水平驱动部，其进行驱动，使得从垂直驱动部选择的像素中，跳过设置在水平方向上的有效像素区域侧的像素区域的像素的信号，并且，读取有效像素区域和光学黑色像素区域的像素。

8. 发明申请

US20120292486A1 SOLID-STATE IMAGING ELEMENT HAVING IMAGE SIGNAL OVERFLOW PATH 有权
标题翻译：具有图像信号溢流路径的固态成像元件
公开(公告)号：US20120292486A1
公开(公告)日：2012-11-22
申请号：US13565383
申请日：2012-08-02
申请人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
发明人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
IPC分类号： H01L27/148
CPC分类号： H04N5/363 , H01L27/14609 , H01L27/14612 , H01L27/14638 , H01L27/14643 , H04N3/1512 , H04N3/155 , H04N5/335 , H04N5/341 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/37457
摘要： Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
摘要翻译：由于构成具有放大功能的单位像素的大量元素将阻碍像素尺寸的减小，以矩阵形式排列的单位像素n，m由光电二极管组成，转移开关用于转移存储在光电二极管中的电荷，浮置用于存储由转移开关传送的电荷的扩散，用于复位浮动扩散的复位开关，以及用于根据浮动扩散的电位向垂直信号线输出信号的放大晶体管，以及通过提供垂直选择脉冲＆phgr; Vn到复位开关的漏极以控制其复位电位，以行为单位选择像素。

9. 发明申请

US20120267691A1 X-Y ADDRESS TYPE SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME 有权
公开(公告)号：US20120267691A1
公开(公告)日：2012-10-25
申请号：US13541428
申请日：2012-07-03
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L31/102
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

10. 发明授权

US08284284B2 Solid-state imaging element, method for driving the same, and camera system 有权
标题翻译：固态成像元件，驱动它的方法和相机系统
公开(公告)号：US08284284B2
公开(公告)日：2012-10-09
申请号：US10747741
申请日：2003-12-29
申请人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
发明人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
IPC分类号： H04N5/335
CPC分类号： H04N5/363 , H01L27/14609 , H01L27/14612 , H01L27/14638 , H01L27/14643 , H04N3/1512 , H04N3/155 , H04N5/335 , H04N5/341 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/37457
摘要： Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
摘要翻译：由于构成具有放大功能的单位像素的大量元素将阻碍像素尺寸的减小，以矩阵形式排列的单位像素n，m由光电二极管组成，转移开关用于转移存储在光电二极管中的电荷，浮置用于存储由转移开关传送的电荷的扩散，用于复位浮动扩散的复位开关，以及用于根据浮动扩散的电位向垂直信号线输出信号的放大晶体管，以及通过提供垂直选择脉冲＆phgr; Vn到复位开关的漏极以控制其复位电位，以行为单位选择像素。

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