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    • 7. 发明授权
    • Methods of bonding pure rhenium to a substrate
    • 将纯铼结合到基底上的方法
    • US07998594B2
    • 2011-08-16
    • US12028893
    • 2008-02-11
    • Don MittendorfScott Sperl
    • Don MittendorfScott Sperl
    • B32B15/04
    • C23C28/023B32B15/01C23C18/165C23C18/1692C23C18/32C25D3/50Y10T428/12771Y10T428/12778Y10T428/12806Y10T428/12812Y10T428/12931Y10T428/12944
    • Methods are provided for bonding pure rhenium to a substrate comprising a material. Non-lubricated components configured to have friction contact with another component are also provided. In an embodiment, by way of example only, a method includes disposing a eutectic alloy over the substrate to form an inter layer, the eutectic alloy comprised essentially of a base alloy and one or more melting point depressants and having a melting temperature that is lower than a melting temperature of the substrate material and a melting temperature of rhenium, placing pure rhenium over the inter layer, and heating the inter layer to a temperature that is substantially equal to or greater than the melting temperature of the eutectic alloy, but that is below the melting temperature of the substrate material and the melting temperature of the pure rhenium to bond the pure rhenium to the substrate.
    • 提供了将纯铼粘合到包含材料的基底上的方法。 还提供了被配置为与另一部件摩擦接触的非润滑部件。 在一个实施例中,仅作为示例,一种方法包括在基底上设置共晶合金以形成内层,该共晶合金基本上由基础合金和一种或多种熔点降低剂组成,并且熔融温度较低 比基底材料的熔融温度和铼的熔融温度,将纯铼放置在层之间,并将层间加热至基本等于或大于共晶合金的熔融温度的温度,但也就是说 低于基底材料的熔融温度和纯铼的熔融温度,以将纯铼结合到基底上。