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1. 发明授权

US11623321B2 Polishing head retaining ring tilting moment control 有权
公开(公告)号：US11623321B2
公开(公告)日：2023-04-11
申请号：US17087941
申请日：2020-11-03
申请人： Applied Materials, Inc.
发明人： Andrew Nagengast , Steven M. Zuniga , Jay Gurusamy
IPC分类号： B24B37/32 , B24B49/16 , B24B37/005 , H01L21/306
摘要： Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) systems used in the manufacturing of semiconductor devices. In one embodiment, the apparatus includes a polishing module, a retaining ring, wherein the retaining ring includes a protrusion on a radially outward edge, and a plurality of load pins disposed through the retaining ring.

2. 发明申请

US20230023915A1 INTERLOCKED STEPPED RETAINING RING 有权
公开(公告)号：US20230023915A1
公开(公告)日：2023-01-26
申请号：US17381913
申请日：2021-07-21
申请人： Applied Materials, Inc.
发明人： Thomas Lawrence TERRY , Garrett Ho Yee SIN , Basavaraja Shankarappa KENGUNTI
IPC分类号： B24B37/32
摘要： Embodiments of the disclosure generally relate to a retaining ring assembly having an annular lower portion, and an annular upper portion. The annular lower portion includes a step feature and an interlocking feature. In some configurations, adhesive is selective deposited on the step feature and the interlocking feature. The annular upper portion includes an opposing step recess, a first gap feature, an opposing interlocking recess and a second gap feature. When the upper portion and the lower portion are mated together, the interlocking recess is snapped into the upper portion tightly securing the lower portion to the upper portion.

3. 发明授权

US11548113B2 Method and apparatus for polishing a substrate 有权
公开(公告)号：US11548113B2
公开(公告)日：2023-01-10
申请号：US16386681
申请日：2019-04-17
申请人： EBARA CORPORATION
发明人： Makoto Fukushima , Tetsuji Togawa , Shingo Togashi , Tomoshi Inoue
IPC分类号： B24B49/08 , B24B49/16 , B24B37/005 , B24B37/34 , B24B37/20 , B24B37/30 , B24B37/04 , B24B49/10 , B24B49/12 , B24B41/00 , B24B37/32
摘要： A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

4. 发明申请

US20220371153A1 POLISHING APPARATUS AND POLISHING METHOD 有权
公开(公告)号：US20220371153A1
公开(公告)日：2022-11-24
申请号：US17680779
申请日：2022-02-25
申请人： EBARA CORPORATION
发明人： Toshimitsu Sasaki , Keita Yagi , Yoichi Shiokawa
IPC分类号： B24B37/013 , B24B37/32 , B24B49/04 , B24B49/10 , B24B49/12 , B24B49/16
摘要： A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

5. 发明申请

US20220362906A1 METHOD FOR CONDITIONING POLISHING PAD 有权
公开(公告)号：US20220362906A1
公开(公告)日：2022-11-17
申请号：US17866538
申请日：2022-07-17
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Shen-Nan LEE , Te-Chien HOU , Teng-Chun TSAI , Chung-Wei HSU , Chen-Hao WU
IPC分类号： B24B53/017 , B24B49/12 , B24B37/32 , B24B49/00
摘要： A method includes measuring a first thickness at a first location of the polishing pad and a second thickness at a second location of the polishing pad; obtaining a first reference thickness at the first location of the polishing pad, wherein the first reference thickness is an average thickness of multiple thicknesses at the first location; obtaining a second reference thickness at the second location of the polishing pad, wherein the second reference thickness is an average thickness of multiple thicknesses at the second location; calculating a first thickness difference; calculating a second thickness difference; modifying a conditioning parameter value at the first location of the polishing pad; and sweeping a conditioner across a surface of the polishing pad; and applying a downforce or a sweeping speed to the conditioner that urges the conditioner against the first location of the polishing pad according to the modified conditioning parameter value.

6. 发明申请

US20220324081A1 CHEMICAL MECHANICAL POLISHING CORRECTION TOOL 有权
公开(公告)号：US20220324081A1
公开(公告)日：2022-10-13
申请号：US17634534
申请日：2020-08-25
申请人： Applied Materials, Inc.
发明人： Jay Gurusamy , Steven M. Zuniga
IPC分类号： B24B37/34 , B24B37/32 , B24B53/017
摘要： A chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a loading ring to apply pressure to an annular region on a back side of the substrate on the pedestal, a polishing ring to bring a polishing material into contact with an annular region on a front side of the substrate that is aligned with the annular region on the back side of the substrate, and a polishing ring actuator to rotate the polishing ring to cause relative motion between the polishing ring and the substrate.

7. 发明申请

US20220258301A1 DUAL LOADING RETAINING RING 有权
公开(公告)号：US20220258301A1
公开(公告)日：2022-08-18
申请号：US17178746
申请日：2021-02-18
申请人： Applied Materials, Inc.
发明人： Steven M. Zuniga , Andrew Nagengast
IPC分类号： B24B37/32 , B24B37/04
摘要： A substrate carrier configured to be attached to a polishing system for polishing a substrate is described herein. The substrate carrier includes a housing including a plurality of load couplings and a retaining ring coupled to the housing. The retaining ring can include an annular body having a central axis, an inner edge facing the central axis of the annular body, the inner edge having a diameter configured to surround a substrate, and an outer edge opposite the inner edge, wherein the plurality of load couplings contact the retaining ring at different radial distances measured from the central axis, and wherein the plurality of load couplings are configured to apply a radially differential force to the retaining ring.

8. 发明授权

US11370080B2 Polishing head for holding substrate and substrate processing apparatus 有权
公开(公告)号：US11370080B2
公开(公告)日：2022-06-28
申请号：US16821281
申请日：2020-03-17
申请人： EBARA CORPORATION
发明人： Kenichi Kobayashi , Makoto Kashiwagi
IPC分类号： B24B37/32
摘要： To reduce a risk generated at a time of collision of a substrate with a retainer. According to one embodiment, a head for holding a polygonal substrate as a polishing object of a polishing apparatus is provided. The head includes a substrate holding surface configured to hold a substrate and a retainer positioned outside the substrate holding surface. The retainer has an end region. The end region is arranged adjacent to a corner portion of the substrate held onto the head. The end region has an end surface on a side of the substrate holding surface. The end surface is configured to increase in distance from the substrate holding surface with approaching an end portion in a longitudinal direction of the retainer.

9. 发明申请

US20220088743A1 Polishing jig assembley for a new or refurbished electrostatic chuck 有权
公开(公告)号：US20220088743A1
公开(公告)日：2022-03-24
申请号：US17457423
申请日：2021-12-02
申请人： Applied Materials, Inc.
发明人： William Ming-ye LU , Wendell Glenn BOYD, JR. , Stacy MEYER
IPC分类号： B24B37/04 , B24B37/32 , H01L21/683
摘要： Embodiments of the present invention provide a polishing ring assembly suitable for polishing an electrostatic chuck and method of using the same. In one embodiment, the polishing ring assembly has a retaining ring assembly and an electrostatic chuck fixture. The retaining ring assembly includes an inner diameter and a top surface, a plurality of outer drive rings wherein the plurality of outer drive rings are placed on the top surface of the ceramic retaining ring. The electrostatic chuck fixture includes an electrostatic chuck drive plate adjacent to the inner diameter of in the ceramic retaining ring. The electrostatic chuck drive plate has a lock to secure retaining ring assembly with the electrostatic chuck fixture without transferring the weight from one assembly over to the other through the locking mechanism.

10. 发明申请

US20210402549A1 POLISHING CARRIER HEAD WITH MULTIPLE ANGULAR PRESSURIZABLE ZONES 有权
公开(公告)号：US20210402549A1
公开(公告)日：2021-12-30
申请号：US17359419
申请日：2021-06-25
申请人： Applied Materials, Inc.
发明人： Steven M. Zuniga , Jay Gurusamy , Andrew J. Nagengast , Vladimir Galburt
IPC分类号： B24B37/005 , B24B37/32
摘要： A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly. The flexible membrane defines a multiplicity of independently pressurizable chambers. The valve assembly has a multiplicity of valves with each respective valve of the multiplicity of valves coupled to a respective pressure chamber from the multiplicity of independently pressurizable chambers. Each respective valve is configured to selectively couple the respective pressure chamber to one pressure supply line from a pair of pressure supply lines that include a pressure supply line from the first plurality of pressure supply lines and a pressure supply line from the second plurality of pressure supply lines.

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