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    • 4. 发明授权
    • Chemically amplified photoresist composition and method for forming resist pattern
    • 化学扩增的光致抗蚀剂组合物和形成抗蚀剂图案的方法
    • US08916330B2
    • 2014-12-23
    • US12821850
    • 2010-06-23
    • Koji IchikawaTakashi Hiraoka
    • Koji IchikawaTakashi Hiraoka
    • G03F7/004G03F7/40C07C321/00C07D407/00
    • G03F7/0397C08F220/18C08F220/20C08F2220/303G03F7/0045G03F7/0046G03F7/2041
    • The present invention provides a resist composition giving a resist pattern excellent in CD uniformity and focus margin. A chemically amplified photoresist composition comprises a resin (A) and an acid generator (B), and the resin (A) contains, as a part or an entirety thereof, a copolymer (A1) which is obtained by polymerizing at least: a (meth)acrylic monomer (a1) having C5-20 alicyclic hydrocarbon group which becomes soluble in an aqueous alkali solution by the action of an acid; a (meth)acrylic monomer (a2) having a hydroxy group-containing adamantyl group; and a (meth)acrylic monomer (a3) having a lactone ring, and the copolymer (A1) has a weight-average molecular weight of 2500 or more and 5000 or less, and a content of the copolymer (A1) is not less than 50 parts by mass with respect to 100 parts by mass of the resin (A).
    • 本发明提供了具有优异的CD均匀性和聚焦余量的抗蚀剂图案的抗蚀剂组合物。 化学放大型光致抗蚀剂组合物包含树脂(A)和酸产生剂(B),树脂(A)的一部分或全部含有共聚物(A1),其通过至少聚合得到:( 甲基)丙烯酸单体(a1),其具有通过酸的作用变得可溶于碱性水溶液的C5-20脂环族烃基; 具有含羟基金刚烷基的(甲基)丙烯酸系单体(a2) 和具有内酯环的(甲基)丙烯酸系单体(a3),共聚物(A1)的重均分子量为2500以上且5000以下,共聚物(A1)的含量为 相对于100质量份树脂(A)为50质量份。