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    • 2. 发明授权
    • Spacer for preventing shorting between conductive plates
    • 隔板用于防止导电板之间的短路
    • US4491606A
    • 1985-01-01
    • US492545
    • 1983-05-09
    • Richard S. RoslerGeorge M. Engle
    • Richard S. RoslerGeorge M. Engle
    • C23C16/509H01J37/32C23C13/08C23C13/04
    • H01J37/32568C23C16/509H01J37/32H01J2237/3321
    • An improved spacer means for separating and inhibiting the shorting together of conductive plates in an RF plasma reactor used in Plasma Enhanced Chemical Vapor Deposition (PECVD) processing of semiconductor devices. The improved spacer means inhibits the accumulation of conductive films on the surface of the separating means by substantially precluding the plasma field, and hence, inhibiting depositions in areas where recessed grooves are in the surface of the separating means. Accordingly, a direct electrical path on the spacer means between the multiple conductive plates of the RF plasma reactor is inhibited. As a result, the reactors can run for longer periods of time and deposit greater thicknesses of conductive films without the conductive plates shorting together causing shutdown of the process.
    • 用于在用于半导体器件的等离子体增强化学气相沉积(PECVD)处理中的RF等离子体反应器中分离和抑制导电板的短路的改进的隔离装置。 改进的间隔装置通过基本上排除等离子体场,从而抑制在分离装置的表面上的导电膜的积累,并因此抑制在分离装置的表面中的凹槽的区域中的沉积。 因此,RF等离子体反应器的多个导电板之间的隔离件装置上的直接电路被禁止。 因此,反应器可以运行更长的时间,并且沉积更大厚度的导电膜,而不会导致导电板短路在一起导致该过程的关闭。
    • 10. 发明授权
    • Method of producing blue colored transparent layers
    • 生产蓝色透明层的方法
    • US3837884A
    • 1974-09-24
    • US27054772
    • 1972-07-10
    • BALZERS PATENT BETEILIG AG
    • RHEINBERGER P
    • C03C17/245G02B5/22C23C13/04
    • C03C17/245C03C2217/23C03C2218/151G02B5/22
    • A powdery mixture of cobalt hydroxide, aluminium oxide, and oxides which absorb substantially no visible light, preferably silicon dioxide, is vacuum evaporated in an oxidizing atmosphere and deposited on a base material and subsequently heat treating at approximately 300*C. The coating of the base material thereby obtained is a hard, well adherent, pure blue colored and transparent film. The proportions of the principal components of the primary mixture used for evaporation are 30 to 40 percent of cobalt hydroxide and 5 to 15 percent of aluminium oxide, the refractive index of the whole mixture is approximately equal to the refractive index of the base material and the thickness of the film produced is approximately 1/1000 mm.
    • 在氧化气氛中真空蒸发氢氧化钴,氧化铝和基本上不可见光的氧化物的粉末混合物,优选二氧化硅,并沉积在基材上,随后在约300℃下进行热处理。 由此获得的基材是硬的,良好粘附的,纯蓝色和透明的薄膜。 用于蒸发的主要混合物的主要组分的比例为氢氧化钴的30-40%和氧化铝的5-15%,整个混合物的折射率近似等于基材的折射率, 所制膜的厚度约为1/1000mm。