专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140283734A1 MICROWAVE HEAT TREATMENT METHOD 审中-公开
标题翻译：微波热处理方法
公开(公告)号：US20140283734A1
公开(公告)日：2014-09-25
申请号：US14223547
申请日：2014-03-24
申请人： TOKYO ELECTRON LIMITED
发明人： Taichi MONDEN , Junichi KITAGAWA , Seokhyoung HONG , Yoshiro KABE
IPC分类号： C30B1/02 , C30B30/00
CPC分类号： C30B1/023 , C30B29/06 , C30B30/00
摘要： The present disclosure relates to a heat treatment method of performing a single crystallization of amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave. The heat treatment method includes: irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature.
摘要翻译：本公开内容涉及通过用微波照射基板来在待处理的基板上进行单晶结晶化的热处理方法。热处理方法包括：用微波照射基板以将基板的温度升高到第一温度，使得形成在基板上的非晶硅在基板和非晶硅之间的界面处成为单晶，并且成核确定不在界面以外的区域发生; 用微波照射基板，在第一温度下加热基板一段预定时间; 用微波照射基板以将第一温度升高到高于第一温度的第二温度; 以及在所述第二温度下用所述微波照射所述基板以加热所述基板。

2. 发明申请

US20150305097A1 MICROWAVE HEATING APPARATUS AND MICROWAVE HEATING METHOD 审中-公开
标题翻译：微波加热装置和微波加热方法
公开(公告)号：US20150305097A1
公开(公告)日：2015-10-22
申请号：US14684865
申请日：2015-04-13
申请人： TOKYO ELECTRON LIMITED
发明人： Mitsutoshi ASHIDA , Seokhyoung HONG
IPC分类号： H05B6/80 , H05B6/64
CPC分类号： H05B6/80 , H01L21/67115 , H01L21/6875 , H05B6/6408 , H05B6/645
摘要： A microwave heating apparatus includes: a processing chamber including a ceiling wall and a bottom wall and accommodating a target object; a microwave introducing unit to generate a microwave for heating the target object; a holding unit to hold the target object; and a control unit to control the microwave introducing unit to heat the target object. During heating the target object, the holding unit holds the target object at a position in which a distance H1 from the top surface of the bottom wall to the bottom surface of the target object satisfies a condition of H1
摘要翻译：微波加热装置包括：处理室，包括顶壁和底壁并容纳目标物体; 微波引入单元，用于产生用于加热目标物体的微波; 保持目标对象的保持单元; 以及控制单元，用于控制微波引入单元以加热目标物体。在加热目标物体期间，保持单元将目标物体保持在距离目标物体的顶壁表面到底面的距离H1满足H1 <λ/ 2的条件的位置处， H2从顶壁的底表面到目标物体的顶面满足3λ/ 4＆nlE; H2 <λ，λ为微波波长的条件。

3. 发明申请

US20150144621A1 MATCHING METHOD AND MICROWAVE HEATING METHOD 审中-公开
标题翻译：匹配方法和微波加热方法
公开(公告)号：US20150144621A1
公开(公告)日：2015-05-28
申请号：US14549175
申请日：2014-11-20
申请人： TOKYO ELECTRON LIMITED
发明人： Seokhyoung HONG , Mitsutoshi ASHIDA , Yoshihiro MIYAGAWA , Masaki KOIZUMI
IPC分类号： H05B6/68 , H05B6/64
CPC分类号： H01L21/67115 , H05B6/6411 , H05B6/705 , H05B6/806
摘要： A matching method and a microwave heating method in a microwave heating apparatus for heating a substrate by introducing a microwave into a processing chamber comprises an initial matching step of performing a matching so that a reflection power to a microwave introducing unit is minimized in a state where the substrate is maintained at a first height position by a supporting member. And a second height position determination step of introducing the microwave into the processing chamber by the microwave introducing unit and determining a second height position of the substrate based on at least a temperature of the substrate while adjusting a height of the substrate by the supporting member.
摘要翻译：微波加热装置中的匹配方法和微波加热方法，用于通过将微波引入处理室来加热基板包括：初始匹配步骤，执行匹配，使得对微波导入单元的反射功率最小化，基板通过支撑构件保持在第一高度位置。以及第二高度位置确定步骤，通过微波引入单元将微波引入处理室，并且在通过支撑构件调节基板的高度的同时基于至少基板的温度确定基板的第二高度位置。

4. 发明申请

US20170179219A1 LOWER ELECTRODE OF DRAM CAPACITOR AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20170179219A1
公开(公告)日：2017-06-22
申请号：US15386741
申请日：2016-12-21
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro ISHIZAKA , Masaki KOIZUMI , Masaki SANO , Seokhyoung HONG
IPC分类号： H01L49/02 , H01L27/108
CPC分类号： H01L28/75 , H01L28/00
摘要： A lower electrode is made of a TiN-based material and provided at a base of a dielectric film in a DRAM capacitor. The lower electrode includes first TiON films provided at opposite outer sides, the first TiON films having a relatively low oxygen concentration, and a second TiON film provided between the first TiON films, the second TiON film having a relatively high oxygen concentration.

5. 发明申请

US20170092489A1 METHOD FOR FORMING TiON FILM 审中-公开
公开(公告)号：US20170092489A1
公开(公告)日：2017-03-30
申请号：US15273383
申请日：2016-09-22
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro ISHIZAKA , Masaki KOIZUMI , Masaki SANO , Seokhyoung HONG
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02186 , C23C16/308 , C23C16/45531 , H01L21/0228 , H01L21/02326 , H01L21/0234 , H01L21/67017 , H01L21/67213 , H01L27/11582 , H01L28/00
摘要： A TiON film forming method is provided. A cycle of forming a unit TiN film at a predetermined processing temperature by alternately supplying a Ti-containing gas and a nitriding gas into the processing chamber accommodating a target substrate and oxidizing the unit TiN film by supplying an oxidizing agent into the processing chamber is repeated multiple times. In an initial stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X1 times and supplying the oxidizing agent is repeated Y1 times. In a later stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X2 times and supplying the oxidizing agent is repeated Y2 times until a desired film thickness is obtained. The number of repetition X1 is set to be greater than the number of repetition X2.

6. 发明申请

US20150144622A1 MICROWAVE HEAT TREATMENT APPARATUS AND MICROWAVE HEAT TREATMENT METHOD 审中-公开
标题翻译：微波热处理装置和微波加热处理方法
公开(公告)号：US20150144622A1
公开(公告)日：2015-05-28
申请号：US14550065
申请日：2014-11-21
申请人： Tokyo Electron Limited
发明人： Seokhyoung HONG , Taichi MONDEN , Yoshihiro MIYAGAWA , Masaki KOIZUMI
IPC分类号： H05B6/80 , H01L21/67 , H05B6/64
摘要： A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.
摘要翻译：微波热处理装置包括：处理容器，其构造成在其中容纳基板; 支撑构件，其构造成将所述基板可旋转地支撑在所述处理容器中; 微波引入装置，被配置为产生用于处理所述基板并将所述微波引入所述处理容器的微波; 第一冷却气体导入部，其安装成面对由所述支撑构件支撑的所述基板的主表面，所述主表面为待加工对象物; 第二冷却气体引入部，安装在由所述支撑构件支撑的所述基板的侧面中; 以及控制单元，其被配置为独立地控制从所述第一冷却气体导入部引入冷却气体和从所述第二冷却气体导入部引入所述冷却气体。

7. 发明申请

US20230037960A1 FILM FORMING METHOD, FILM FORMING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230037960A1
公开(公告)日：2023-02-09
申请号：US17758819
申请日：2020-11-30
申请人： Tokyo Electron Limited
发明人： Seokhyoung HONG , Tsuyoshi TAKAHASHI , Taichi MONDEN
IPC分类号： H01L21/285 , H01L21/321 , H01L21/768 , C23C16/34 , C23C16/455 , C23C16/06 , C23C14/06 , C23C14/18 , C23C16/56 , C23C14/58
摘要： A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.

8. 发明申请

US20150129586A1 MICROWAVE HEATING APPARATUS AND PROCESSING METHOD 审中-公开
标题翻译：微波加热装置和加工方法
公开(公告)号：US20150129586A1
公开(公告)日：2015-05-14
申请号：US14603910
申请日：2015-01-23
申请人： Tokyo Electron Limited
发明人： Taro IKEDA , Jun YAMASHITA , Seokhyoung HONG , Kouji SHIMOMURA , Hiroyuki HAYASHI
IPC分类号： H05B6/80 , H01L21/324
CPC分类号： H05B6/806 , H01L21/324
摘要： A microwave heating apparatus includes a processing chamber having a top wall, a bottom wall and a sidewall, and configured to accommodate an object to be processed; a microwave introducing unit configured to generate a microwave for heating the object and introduce the microwave into the processing chamber; a plurality of supporting members configured to make contact with the object and support the object in the processing chamber. The microwave heating apparatus further includes a dielectric member provided between the object supported by the supporting members and the bottom wall while being apart from the object.
摘要翻译：微波加热装置包括具有顶壁，底壁和侧壁的处理室，并且被配置为容纳被处理物体; 微波引入单元，被配置为产生用于加热所述物体并将所述微波引入所述处理室的微波; 多个支撑构件，其构造成与所述物体接触并将所述物体支撑在所述处理室中。微波加热装置还包括设置在由支撑构件支撑的物体和与该物体分离的底壁之间的电介质构件。

9. 发明申请

US20140367377A1 MICROWAVE HEATING APPARATUS AND HEATING METHOD 审中-公开
标题翻译：微波加热装置和加热方法
公开(公告)号：US20140367377A1
公开(公告)日：2014-12-18
申请号：US14293794
申请日：2014-06-02
申请人： TOKYO ELECTRON LIMITED
发明人： Taichi MONDEN , Kouji SHIMOMURA , Seokhyoung HONG , Yoshihiro MIYAGAWA , Jun YAMASHITA , Taro IKEDA , Yuki MOTOMURA
IPC分类号： H05B6/74 , H05B6/80 , H05B6/64
CPC分类号： H05B6/74 , H01L21/67115 , H01L21/68742 , H01L21/68792 , H05B6/705 , H05B6/806 , H05B2206/044
摘要： A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.
摘要翻译：微波加热装置包括：相位控制单元，被配置为通过微波引入单元改变引入到处理室的微波驻波的相位。相位控制单元包括相对于底壁的内表面的凹部。相位控制单元由从处理室的外侧安装在底部的下表面的底部和固定板形成。处理室中的驻波的相位由金属壁包围的相位控制单元的凹部中的微波的入射和反射而改变。

10. 发明申请

US20220356565A1 TITANIUM NITRIDE FILM FORMING METHOD AND TITANIUM NITRIDE FILM FORMING APPARATUS 有权
公开(公告)号：US20220356565A1
公开(公告)日：2022-11-10
申请号：US17661577
申请日：2022-05-02
申请人： Tokyo Electron Limited
发明人： Tsuyoshi TAKAHASHI , Seokhyoung HONG , Kensuke HIGUCHI
IPC分类号： C23C16/34 , H01L21/285 , C23C16/455 , C23C16/52
摘要： A method of forming a titanium nitride film includes: forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate, wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式