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1. 发明申请

US20210230765A1 Controlled Induced Warping of Electronic Substrates via Electroplating 有权
公开(公告)号：US20210230765A1
公开(公告)日：2021-07-29
申请号：US17017462
申请日：2020-09-10
申请人： Rockwell Collins, Inc.
发明人： Richard Korneisel , Nathaniel P. Wyckoff , Brandon C. Hamilton , Jacob R. Mauermann , Carlen R. Welty
IPC分类号： C25F3/30 , H01L21/67 , H01L21/321 , C25F7/00
摘要： An integrated circuit (IC) package incorporating controlled induced warping is disclosed. The IC package includes an electronic substrate having an active side upon which semiconducting dies and functional circuits have been lithographed or otherwise fabricated, leading to an inherent warping in the direction of the active side. One or more corrective layers may be deposited to the opposing, or inactive, side of the semiconducting die via electroplating in order to induce corrective warping of the electronic substrate back toward the horizontal (e.g., in the direction of the inactive side) to a desired degree.

2. 发明授权

US09551085B2 Electrochemical polishing solution, process for electrochemically polishing graphite gate electrode and graphite gate electrode 有权
标题翻译：电化学抛光液，石墨栅电极和石墨栅电极的电化学抛光工艺
公开(公告)号：US09551085B2
公开(公告)日：2017-01-24
申请号：US14316302
申请日：2014-06-26
申请人： BOE TECHNOLOGY GROUP CO., LTD. , Beijing BOE Vacuum Technology Co., Ltd.
发明人： Meiling Liao
IPC分类号： C25F3/16 , C25F3/30 , H01J19/38 , H01J9/14
CPC分类号： C25F3/16 , C25F3/30 , H01J9/14 , H01J19/38
摘要： The invention discloses an electrochemical polishing solution, a process for electrochemically polishing a graphite gate electrode and a graphite gate electrode, which are used for providing an electrochemical polishing solution and a polishing process to efficiently remove the contaminant on the surface of a gate electrode and improve the quality of the gate electrode. Said electrochemical polishing solution comprises 900-1000 parts by weight of water; 195-205 parts by weight of an alkaline metal hydroxide; 49-51 parts by weight of a weak acid salt; and 294-306 parts by weight of an additive.
摘要翻译：本发明公开了一种电化学抛光溶液，用于电化学抛光石墨栅电极和石墨栅电极的方法，其用于提供电化学抛光溶液和抛光工艺以有效地除去栅电极表面上的污染物并改善栅电极的质量。所述电化学抛光溶液包含900-1000重量份的水; 195-205重量份的碱金属氢氧化物; 49-51重量份的弱酸盐; 和294-306重量份的添加剂。

3. 发明申请

US20160115613A1 APPARATUS AND METHOD FOR PLATING AND/OR POLISHING WAFER 审中-公开
标题翻译：抛光和/或抛光波形的装置和方法
公开(公告)号：US20160115613A1
公开(公告)日：2016-04-28
申请号：US14889922
申请日：2013-05-09
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： Jian Wang , Yinuo Jin , Hongchao Yang , Hui Wang
IPC分类号： C25D7/12 , C25F7/00 , C25F3/30 , C25D17/06 , C25D17/00
CPC分类号： C25D7/12 , B24B37/046 , B24B57/02 , C25D17/001 , C25D17/005 , C25D17/06 , C25F3/30 , C25F7/00
摘要： An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.
摘要翻译：用于电镀和/或抛光晶片的装置和方法包括晶片卡盘，辅助喷嘴装置和主喷嘴装置。晶片卡盘保持并定位晶片，水平移动并旋转。辅助喷嘴装置供给不带电或带电的电解质以覆盖晶片和晶片卡盘的外边缘，并且主喷嘴装置向晶片的表面提供带电电解质，以改善外边缘的电镀和/或抛光均匀性，降低了设备的整体电阻，并提高了电镀和/或抛光速度。

4. 发明授权

US09249523B2 Electro-polishing and porosification 有权
标题翻译：电抛光和开孔
公开(公告)号：US09249523B2
公开(公告)日：2016-02-02
申请号：US14039597
申请日：2013-09-27
申请人： Seung Bum Rim
发明人： Seung Bum Rim
IPC分类号： C25F3/30 , C25F3/12 , H01L21/02 , H01L31/068 , H01L31/18 , C25F7/00
CPC分类号： C25F3/30 , C25F3/12 , C25F7/00 , H01L21/0201 , H01L21/0203 , H01L21/306 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Forming a porous layer on a silicon substrate is disclosed. Forming the porous layer can include placing a silicon substrate in a first solution and conducting a first current through the silicon substrate. It can further include conducting a second current through the silicon substrate resulting in a porous layer on the silicon substrate.
摘要翻译：公开了在硅衬底上形成多孔层。形成多孔层可以包括将硅衬底放置在第一溶液中并且传导第一电流通过硅衬底。它还可以包括通过硅衬底导通第二电流，导致硅衬底上的多孔层。

5. 发明授权

US09214359B2 Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates 有权
标题翻译：从微电子基板同时去除多个导电材料的方法和装置
公开(公告)号：US09214359B2
公开(公告)日：2015-12-15
申请号：US14281606
申请日：2014-05-19
申请人： Micron Technology, Inc.
发明人： Dinesh Chopra
IPC分类号： H01L21/4763 , H01L21/302 , B44C1/22 , H01L21/3213 , B23H5/08 , C25F3/02 , C25F3/30 , C25F7/00 , H01L21/321 , H01L21/768
CPC分类号： H01L21/3213 , B23H5/08 , C25F3/02 , C25F3/30 , C25F7/00 , H01L21/32115 , H01L21/32125 , H01L21/32134 , H01L21/7684
摘要： A method and apparatus for simultaneously removing conductive materials from a microelectronic substrate. A method in accordance with one embodiment of the invention includes contacting a surface of a microelectronic substrate with an electrolytic liquid, the microelectronic substrate having first and second different conductive materials. The method can further include controlling a difference between a first open circuit potential of the first conducive material and a second open circuit potential of the second conductive material by selecting a pH of the electrolytic liquid. The method can further include simultaneously removing at least portions of the first and second conductive materials by passing a varying electrical signal through the electrolytic liquid and the conductive materials. Accordingly, the effects of galvanic interactions between the two conductive materials can be reduced and/or eliminated.
摘要翻译：一种用于从微电子衬底同时去除导电材料的方法和装置。根据本发明的一个实施例的方法包括使微电子衬底的表面与电解液接触，微电子衬底具有第一和第二不同的导电材料。该方法还可以包括通过选择电解液的pH来控制第一导电材料的第一开路电位和第二导电材料的第二开路电位之间的差。该方法还可以包括通过使变化的电信号通过电解液和导电材料同时去除第一和第二导电材料的至少一部分。因此，可以减少和/或消除两种导电材料之间的电偶相互作用的影响。

6. 发明授权

US08349087B2 Semiconductor device manufacturing method, wafer treatment system, and recording medium 有权
标题翻译：半导体器件制造方法，晶片处理系统和记录介质
公开(公告)号：US08349087B2
公开(公告)日：2013-01-08
申请号：US12654987
申请日：2010-01-12
申请人： Hidetaka Nambu , Nobuo Hironaga , Futoshi Ota , Toru Yokoyama , Osamu Sugawara , Ryo Satou , Masato Tamura
发明人： Hidetaka Nambu , Nobuo Hironaga , Futoshi Ota , Toru Yokoyama , Osamu Sugawara , Ryo Satou , Masato Tamura
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02 , C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01L21/67389
摘要： A semiconductor device manufacturing method includes loading plural dry-etched wafers one by one in a container having a side door so as to be disposed substantially horizontally and in layers vertically therein; and blowing out a purge gas horizontally to those wafers loaded in the container for 30 sec or more after all the subject wafers are loaded in the container while the side door is open.
摘要翻译：半导体器件制造方法包括：将多个干蚀刻晶片一个接一个地装载在具有侧门的容器中，以便基本上水平布置并且在其中垂直地设置; 并且在侧门打开时将所有的被摄体晶片装载到容器中之后，将装载在容器中的那些晶片水平地吹扫吹扫气体30秒以上。

7. 发明授权

US08348719B2 Polisher for chemical mechanical planarization 有权
标题翻译：抛光机用于化学机械平面化
公开(公告)号：US08348719B2
公开(公告)日：2013-01-08
申请号：US11727119
申请日：2007-03-23
申请人： Hsin-Hsien Lu , Liang-Guang Chen , Tien-I Bao , Shau-Lin Shue
发明人： Hsin-Hsien Lu , Liang-Guang Chen , Tien-I Bao , Shau-Lin Shue
IPC分类号： B24B49/00 , B24B51/00 , B24B1/00 , B24B7/19 , B24B7/30 , C25F3/30
CPC分类号： B24B37/22 , B24B37/042 , B24B37/24
摘要： Embodiments of a polisher for chemical mechanical planarization. The polisher includes a polishing pad structure containing a first reactant therein, and a second reactant in a polishing environment over the polishing pad structure. The first reactant and the second reactant react endothermically upon contact when polishing a wafer surface between the polishing pad structure and the polishing environment.
摘要翻译：用于化学机械平面化的抛光机的实施例。抛光机包括在其中包含第一反应物的抛光垫结构和在抛光环境中的抛光垫结构上的第二反应物。当抛光抛光垫结构和抛光环境之间的晶片表面时，第一反应物和第二反应物在接触时发生吸热反应。

8. 发明申请

US20090277472A1 Photoresist Stripping Method and Apparatus 审中-公开
标题翻译：光刻胶剥离方法和装置
公开(公告)号：US20090277472A1
公开(公告)日：2009-11-12
申请号：US12435890
申请日：2009-05-05
申请人： Michael Rivkin , Peter Krotov
发明人： Michael Rivkin , Peter Krotov
IPC分类号： C25F3/30 , B08B3/02 , B08B3/10 , B08B3/08
CPC分类号： H01L21/68785 , H01L21/67103 , H01L21/68764 , H01L21/68771
摘要： The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photoresist material from, e.g., a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a pedestal for supporting a wafer, which pedestal has a low emissivity surface to reduce heat transfer by radiation.
摘要翻译：本发明涉及从工件去除不想要的材料的方法。更具体地，本发明涉及在半导体制造期间从例如半导体晶片剥离光致抗蚀剂材料。方法包括实现用于支撑晶片的基座，该基座具有低发射面以减少辐射的热传递。

9. 发明授权

US07581549B2 Method for removing carbon-containing residues from a substrate 失效
标题翻译：从底物中除去含碳残留物的方法
公开(公告)号：US07581549B2
公开(公告)日：2009-09-01
申请号：US11178545
申请日：2005-07-12
申请人： Andrew David Johnson , Hoshang Subawalla , Bing Ji , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr. , Robert Gordon Ridgeway , Peter James Maroulis , Mark Leonard O'Neill , Aaron Scott Lukas , Stephen Andrew Motika
发明人： Andrew David Johnson , Hoshang Subawalla , Bing Ji , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr. , Robert Gordon Ridgeway , Peter James Maroulis , Mark Leonard O'Neill , Aaron Scott Lukas , Stephen Andrew Motika
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： C23C16/4405
摘要： A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.
摘要翻译：本文描述了用于从基底去除含碳残留物的方法。一方面，提供了从基材表面的至少一部分去除含碳残余物的方法，其包括：提供包含氧源，氟源和任选添加气体的工艺气体，其中摩尔比在工艺气体中所含的氧与氟的含量范围为约1至约10; 使用至少一个能量源来激活所述工艺气体以提供反应性物质; 并使基材的表面与反应性物质接触，从表面挥发并除去含碳残渣。

10. 发明授权

US07578890B2 Method for removing contaminants from silicon wafer surface 失效
标题翻译：从硅晶片表面去除污染物的方法
公开(公告)号：US07578890B2
公开(公告)日：2009-08-25
申请号：US11753219
申请日：2007-05-24
申请人： Yuling Liu , Xinhuan Niu , Shengli Wang , Juan Wang , Weiwei Li , Zhenguo Ma
发明人： Yuling Liu , Xinhuan Niu , Shengli Wang , Juan Wang , Weiwei Li , Zhenguo Ma
IPC分类号： B08B3/00 , B08B3/12 , C25F1/00 , C25F3/30
CPC分类号： H01L21/02052 , C11D1/72 , C11D3/30 , C11D11/0047 , C11D11/007
摘要： Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.
摘要翻译：教授是从硅晶片表面去除表面污染物（包括有机污染物，金属离子和固体颗粒）的方法，包括以下步骤：（a）将硅晶片表面浸入通过其中流过电流的水性清洁剂溶液中掺杂金刚石膜作为电极; （b）将硅晶片表面浸没在水性清洁剂溶液中; 对硅晶片进行超声波; 和任选地加热溶液; （c）使用掺杂硼的金刚石膜作为电极将硅晶片表面浸入通过电流的水中; （d）用超声波和加热将硅晶片表面浸入水中; （e）重复步骤（d）; 和（f）用水喷涂硅表面。使用根据本发明的方法获得的结果远远优于用常规方法获得的结果。技术简单，操作方便，环保。

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