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1. 发明授权

US06836608B2 Planar optical waveguide, method for manufacturing the same and polymer optical waveguide 失效
标题翻译：平面光波导，其制造方法和聚合物光波导
公开(公告)号：US06836608B2
公开(公告)日：2004-12-28
申请号：US10026806
申请日：2001-12-27
申请人： Yoshio Kishimoto , Masahiro Mitsuda
发明人： Yoshio Kishimoto , Masahiro Mitsuda
IPC分类号： G02B610
CPC分类号： G02B6/138 , G02B6/1221 , G02B2006/121
摘要： A planar optical waveguide includes a layered film formed on a substrate, and an optical waveguide core formed in the layered film. A cross section of the optical waveguide core is substantially quadrilateral, and a dopant layer including refractive index-lowering molecules is provided around the optical waveguide core. The refractive index-lowering molecules included in the dopant layer are unevenly distributed in the optical waveguide core with a concentration that is higher toward outer sides and corners of the optical waveguide core, whereby a graded-index optical waveguide is constituted.
摘要翻译：平面光波导包括形成在基板上的分层膜和形成在层叠膜中的光波导芯。光波导芯的横截面基本上为四边形，并且在光波导芯周围设置包括折射率降低分子的掺杂剂层。包含在掺杂剂层中的折射率降低分子在光波导芯中的分布不均匀，其浓度高于光波导芯的外侧和角部，由此构成渐变折射率的光波导。

2. 发明授权

US06836351B2 Quantum-confined stark effect quantum-dot optical modulator 有权
标题翻译：量子限制斯塔克效应量子点光调制器
公开(公告)号：US06836351B2
公开(公告)日：2004-12-28
申请号：US10283947
申请日：2002-10-30
申请人： Peter Y. Livingston , Steven R. Holm , Elizabeth T. Kunkee
发明人： Peter Y. Livingston , Steven R. Holm , Elizabeth T. Kunkee
IPC分类号： G02B610
CPC分类号： B82Y20/00 , B82Y10/00 , G02F1/01708 , G02F1/2257 , G02F2001/01791 , G02F2201/126 , H01L29/127
摘要： A quantum-confined Stark effect quantum-dot optical modulator includes an interferometer having a beam splitter, first and second parallel optical branches fed by the beam splitter and a beam combiner fed by the first and second parallel optical branches and a laser for feeding a laser beam to the beam splitter. First and second optical phase shifters are provided in respective ones of the first and second parallel optical branches. Each optical phase shifter includes an intrinsic semiconductor crystalline planar layer and p-type and n-type planar semiconductor layers on opposite faces of the intrinsic semiconductor crystalline planar layer, the intrinsic layer lying in a plane parallel to a direction of propagation of the laser beam in the respective optical branch. The intrinsic layer has plural layers of planar arrays of quantum dots therein. A reverse bias D.C. voltage source is connected across the p-type and n-type layers.
摘要翻译：量子限制的斯塔克效应量子点光调制器包括具有分束器的干涉仪，由分束器馈送的第一和第二平行光学分支和由第一和第二平行光学分支馈送的光束组合器和用于馈送激光器的激光器光束分束器。第一和第二光学移相器设置在第一和第二平行光学分支中的相应的一个中。每个光学移相器包括本征半导体晶体平面层和本征半导体晶体平面层的相对面上的p型和n型平面半导体层，本征层位于与激光束的传播方向平行的平面中在相应的光学分支中。本征层具有多层量子点平面阵列。反向偏压直流电压源跨越p型和n型层连接。

3. 发明授权

US06834152B2 Strip loaded waveguide with low-index transition layer 有权
标题翻译：带载波导与低折射率过渡层
公开(公告)号：US06834152B2
公开(公告)日：2004-12-21
申请号：US10241284
申请日：2002-09-09
申请人： Lawrence Cary Gunn, III , Axel Scherer
发明人： Lawrence Cary Gunn, III , Axel Scherer
IPC分类号： G02B610
CPC分类号： B82Y20/00 , G02B6/10 , G02B6/12004 , G02B6/122 , G02B6/1225 , G02B6/132 , G02B6/136 , G02B2006/12038 , G02B2006/12061 , G02B2006/12097 , G02B2006/12109 , G02B2006/12116 , G02B2006/12145 , G02B2006/12147 , G02F1/0147 , G02F1/3133 , G02F2202/10 , G02F2203/15
摘要： A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.
摘要翻译：条带加载波导包括板坯和条带，其中条带与板坯分离。然而，提供了用于传播光学模式的引导区域，并且该引导区域在条带和板块内均延伸。具有低于带材和板坯折射率的折射率的材料层可以设置在条带和板坯之间并分离。在一个实施例中，板坯包括晶体硅，条带包括多晶硅或晶体硅，并且其间的材料层包括二氧化硅。这样的波导可以在与晶体管相同的衬底上形成。这些波导也可以被电偏置以改变波导的折射率和/或吸收。

4. 发明授权

US06826344B2 Optical element and method of fabrication thereof 失效
标题翻译：光学元件及其制造方法
公开(公告)号：US06826344B2
公开(公告)日：2004-11-30
申请号：US09935027
申请日：2001-08-22
申请人： Mikihiro Shimada , Tsuguhiro Korenaga , Masanori Iida , Hiroyuki Asakura
发明人： Mikihiro Shimada , Tsuguhiro Korenaga , Masanori Iida , Hiroyuki Asakura
IPC分类号： G02B610
CPC分类号： G02B6/124
摘要： An optical element has a substrate having or not having a channel for optical waveguide; and a material which has a refractive index higher than that of the substrate and is filled in the channel for optical waveguide or is disposed on the substrate; wherein the refractive index in a part of the material varies substantially periodically or is substantially continuously monotone increasing or decreasing in the direction of light propagation.
摘要翻译：光学元件具有具有或不具有光波导通道的基板; 以及具有比基板的折射率高的材料，并且填充在光波导的通道中或者设置在基板上; 其中所述材料的一部分中的折射率基本上周期性地变化，或者在光传播的方向上基本上连续单调增加或减少。

5. 发明授权

US06819852B2 Optimized defects in band-gap waveguides 失效
标题翻译：带隙波导中的优化缺陷
公开(公告)号：US06819852B2
公开(公告)日：2004-11-16
申请号：US10713241
申请日：2003-11-13
申请人： Douglas C. Allan , Nicholas F. Borrelli , James C. Fajardo , Karl W. Koch, III , James A. West
发明人： Douglas C. Allan , Nicholas F. Borrelli , James C. Fajardo , Karl W. Koch, III , James A. West
IPC分类号： G02B610
CPC分类号： B82Y20/00 , G02B6/02328 , G02B6/1225
摘要： Disclosed is a photonic band-gap crystal waveguide having the physical dimension of the photonic crystal lattice and the size of the defect selected to provide for optimum mode power confinement to the defect. The defect has a boundary which has a characteristic numerical value associated with it. The ratio of this numerical value to the pitch of the photonic crystal is selected to avoid surface modes found to exist in certain configurations of the photonic band-gap crystal waveguide. Embodiments in accord with the invention having circular and hexagonal defect cross sections are disclosed and described. A method of making the photonic band-gap crystal waveguide is also disclosed and described.
摘要翻译：公开了具有光子晶格的物理尺寸和选择的缺陷的尺寸以提供对缺陷的最佳模式功率约束的光子带隙晶体波导。缺陷具有与其相关联的特征数值的边界。选择该数值与光子晶体的间距的比率以避免发现在光子带隙晶体波导的某些配置中存在的表面模式。公开和描述了具有圆形和六边形缺陷横截面的本发明的实施例。还公开并描述了制造光子带隙晶体波导的方法。

6. 发明授权

US06807352B2 Optical waveguides with embedded air-gap cladding layer and methods of fabrication thereof 有权
标题翻译：具有嵌入式气隙包覆层的光波导及其制造方法
公开(公告)号：US06807352B2
公开(公告)日：2004-10-19
申请号：US10074067
申请日：2002-02-11
申请人： Tony Mule′ , James D. Meindl , Thomas K. Gaylord , Elias N. Glytsis , Paul Kohl
发明人： Tony Mule′ , James D. Meindl , Thomas K. Gaylord , Elias N. Glytsis , Paul Kohl
IPC分类号： G02B610
CPC分类号： G02B6/136 , G02B6/10 , G02B6/1221 , G02B6/132 , G02B6/34 , G02B6/43 , G02B2006/12107
摘要： Waveguides having air-gap cladding layers and methods of fabricating waveguides having air-gap cladding layers are disclosed. A representative waveguide includes a waveguide core having an air-gap cladding layer engaging a portion of the waveguide core. In addition, a representative method of fabricating a waveguide having an air-gap cladding layer includes: providing a substrate having a lower cladding layer disposed on the substrate; disposing a waveguide core on a portion of the lower cladding layer; disposing a sacrificial layer onto at least one portion of the lower cladding layer and the waveguide core; disposing an overcoat layer onto the lower cladding layer and the sacrificial layer; and removing the sacrificial layer to define an air-gap cladding layer within the overcoat polymer layer and engaging a portion of the waveguide core.
摘要翻译：公开了具有气隙包覆层的波导和制造具有气隙包覆层的波导的方法。代表性的波导包括具有接合波导芯的一部分的气隙包覆层的波导芯。另外，制造具有气隙包层的波导的代表性方法包括：提供具有设置在基板上的下包层的基板; 在所述下包层的一部分上设置波导芯; 在所述下包层和所述波导芯的至少一部分上设置牺牲层; 在下包层和牺牲层上设置外涂层; 以及去除所述牺牲层以在所述外涂层聚合物层内限定气隙包层并与所述波导芯的一部分接合。

7. 发明授权

US06801702B2 Electro-optic device 有权
标题翻译：电光装置
公开(公告)号：US06801702B2
公开(公告)日：2004-10-05
申请号：US09874999
申请日：2001-06-07
申请人： Ian Edward Day
发明人： Ian Edward Day
IPC分类号： G02B610
CPC分类号： G02F1/025 , G02F2201/063 , G02F2201/122 , G02F2202/06 , G02F2202/105
摘要： An electro-optic device is disclosed for altering the density of charge carriers within an integrated optical waveguide. The device includes a substrate, and an integrated optical waveguide extending across the substrate with two doped regions being provided such that an electrical signal can be applied across the doped regions to alter the density of charge carriers within the waveguide. The doped regions can each include a plurality of doped areas spaced apart from each other along the length of the waveguide.
摘要翻译：公开了一种用于改变集成光波导内的电荷载流子密度的电光器件。该器件包括衬底和跨越衬底延伸的集成光波导，其中提供两个掺杂区域，使得可以跨越掺杂区域施加电信号以改变波导内的电荷载流子的密度。掺杂区域可以各自包括沿着波导的长度彼此间隔开的多个掺杂区域。

8. 发明授权

US06798964B2 Method and apparatus for modulating an optical beam in an optical device 有权
标题翻译：用于调制光学装置中的光束的方法和装置
公开(公告)号：US06798964B2
公开(公告)日：2004-09-28
申请号：US10138138
申请日：2002-05-01
申请人： Remus Nicolaescu
发明人： Remus Nicolaescu
IPC分类号： G02B610
CPC分类号： G02F1/025 , G02F2001/0152 , G02F2203/50
摘要： An apparatus and method for modulating a phase of optical beam. In one embodiment, an apparatus according to embodiments of the present invention includes a plurality of alternating layers of semiconductor material and insulating material. The apparatus further includes a plurality of conductors, each of the conductors coupled to a respective one of the layers of semiconductor material to modulate charge layers proximate to the layers of insulating material. An optical path is included along the plurality of alternating layers of semiconductor material and insulating material and through the modulated charge layers. A phase of an optical beam directed along the optical path through the modulated charge layers is modulated in response to the modulated charge layers.
摘要翻译：用于调制光束相位的装置和方法。在一个实施例中，根据本发明的实施例的装置包括多个交替层的半导体材料和绝缘材料。该装置还包括多个导体，每个导体耦合到相应的一个半导体材料层，以调制靠近绝缘材料层的电荷层。沿着半导体材料和绝缘材料的多个交替层并且通过调制的电荷层包括光路。响应于调制的电荷层调制沿着经过调制的电荷层的光路定向的光束的相位。

9. 发明授权

US06775460B2 Optical array and collimated light distribution 失效
标题翻译：光学阵列和准直光分布
公开(公告)号：US06775460B2
公开(公告)日：2004-08-10
申请号：US10428891
申请日：2003-05-02
申请人： Ivan B. Steiner , Robert J. Saccomanno
发明人： Ivan B. Steiner , Robert J. Saccomanno
IPC分类号： G02B610
CPC分类号： G02B6/0028 , G02B6/0006 , G02B6/002 , G02B6/0038 , G02B6/0046 , Y10S385/901
摘要： Collimated light distribution elements and systems that are especially suited to backlighting liquid crystal displays comprise a waveguide with clocked microstructured features for directing the exiting beam off-normal, a high efficiency mirror coating comprising both TIR and specularly reflective mirror elements, and a polarization recycling system.
摘要翻译：特别适用于背光液晶显示器的准直光分布元件和系统包括具有时钟微结构特征的波导，用于将离开的光束引导离开正常，包括TIR和镜面反射镜元件两者的高效镜面涂层，以及偏振回收系统。

10. 发明授权

US06771868B2 Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides 有权
标题翻译：氘代气体用于低损耗光学器件和波导的薄膜的蒸镀
公开(公告)号：US06771868B2
公开(公告)日：2004-08-03
申请号：US10465881
申请日：2003-06-20
申请人： Frederick G. Johnson , Oliver S. King , John V. Hryniewicz , Lance G. Joneckis , Sai T. Chu , David M. Gill
发明人： Frederick G. Johnson , Oliver S. King , John V. Hryniewicz , Lance G. Joneckis , Sai T. Chu , David M. Gill
IPC分类号： G02B610
CPC分类号： C03C4/0042 , C03C17/3435 , C03C17/3482 , C03C2218/152 , C03C2218/33 , C23C16/308 , C23C16/401 , G02B6/132 , G02B2006/12097 , G02B2006/121
摘要： Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.
摘要翻译：使用由氘化物质组成的蒸气蒸发淀积无定形含硅薄膜的装置和方法。通过该方法在衬底晶片上生长的薄膜含有氘，但几乎没有氢。与使用常规的具有含氢前体的气相沉积技术生长的薄膜中形成的波导的损耗相比，使用该方法形成的光波导的光学器件相比，通常用于光通信的近红外光谱中的光吸收或损耗显着降低。在一个变型中，光学器件形成在形成在诸如硅衬底的衬底上的氧化硅层上。一些变化的光学器件是化学物质SiO x N y：D。由于形成方法不需要退火，所以可以在电子和光学器件或其部分上生长薄膜，而不会损坏这些器件。

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