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1. 发明公开

US20230369035A1 PHOTOTUBE 审中-公开
公开(公告)号：US20230369035A1
公开(公告)日：2023-11-16
申请号：US18026364
申请日：2021-09-03
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Tsuyoshi KODAMA , Masaki YAMADA
IPC分类号： H01J40/06 , H01J40/10
CPC分类号： H01J40/06 , H01J40/10
摘要： A photoelectric tube includes a housing including a light transmitting portion, an electron emitting portion including a photoelectric surface disposed inside the housing, an electron capturing portion disposed between the light transmitting portion and the photoelectric surface inside the housing, and a conductive layer disposed on a light transmitting portion side of at least a part of the electron capturing portion to face the photoelectric surface inside the housing and configured to allow light to pass therethrough.

2. 发明授权

US10535493B2 Photocathode designs and methods of generating an electron beam using a photocathode 有权
公开(公告)号：US10535493B2
公开(公告)日：2020-01-14
申请号：US16150399
申请日：2018-10-03
申请人： KLA-TENCOR CORPORATION
发明人： Katerina Ioakeimidi , Gildardo R. Delgado , Michael E. Romero , Frances Hill , Rudy F. Garcia
IPC分类号： H01J19/24 , H01J37/073 , H01J37/26 , G02B27/09 , H01J40/06 , H01J40/18 , H01J1/304 , H01J37/06 , H01J37/28 , H01J1/34 , H01L21/67
摘要： A photocathode can include a body fabricated of a wide bandgap semiconductor material, a metal layer, and an alkali halide photocathode emitter. The body may have a thickness of less than 100 nm and the alkali halide photocathode may have a thickness less than 10 nm. The photocathode can be illuminated with a dual wavelength scheme.

3. 发明申请

US20190355561A1 LOW TEMPERATURE, PHOTONICALLY AUGMENTED ELECTRON SOURCE SYSTEM 审中-公开
公开(公告)号：US20190355561A1
公开(公告)日：2019-11-21
申请号：US16406008
申请日：2019-05-08
申请人： Kristin Cortella Sampayan
发明人： Kristin Cortella Sampayan
IPC分类号： H01J40/06 , H01J3/36
摘要： An electron source system utilizing photon enhanced thermionic emission to create a source of well controlled electrons for injection into a series of lenses so that the beam can be fashioned to meet the particular specification for a given use is disclosed. Because of the recent increased understanding and characterization of the bandgap in certain materials, a simplified system can now be realized to overcome the potential barrier at the surface. With this system, only low electric fields with moderate temperatures (˜500 ° C.) are required. The resulting system enables much easier focusing of the electron beam because the random component of the energy of the electrons is much lower than that of a conventional system. The system comprises an emitter of wide bandgap material, a first light source and a heating element wherein the heating element provides moderate warming to the wide bandgap material and the light source provides photonic excitation to the material, causing electrons to be emitted into an optical system to manipulate the emitted electrons.

4. 发明授权

US10403484B2 Optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters 有权
公开(公告)号：US10403484B2
公开(公告)日：2019-09-03
申请号：US15956300
申请日：2018-04-18
申请人： UNIVERSITY OF SOUTHERN CALIFORNIA
发明人： Fatemeh Rezaeifar Bayat , Rehan Rashid Kapadia
IPC分类号： H01J40/06 , H01J3/02
摘要： A photonic electron emission device includes an emitter, a photonic energy conduit evanescently coupled to the emitter, and an anode. The emitter includes a component selected from the group consisting of a metal, a semimetal, a semiconductor having a bandgap that is less than about 3.5 eV. The anode is positively biased with respect to the emitter, the anode directing electrons emitted from the emitter.

5. 发明授权

US10186405B2 Multiband photocathode and associated detector 有权
公开(公告)号：US10186405B2
公开(公告)日：2019-01-22
申请号：US15564880
申请日：2016-04-06
申请人： Photonis France
发明人： Moustapha Conde , Justin Foltz
IPC分类号： G01J5/00 , H01J40/06 , H01J1/34 , H01J40/16
摘要： The invention relates to a photocathode including an input window (210) suitable for receiving a flow of incident photons, and an active layer (230), the active layer consisting of a plurality of elementary layers (2301, 2302) made of semiconductor materials having decreasing forbidden bandwidths in the direction of the flow of incident photons. The surface of the photocathode opposite the input window is structured so that each elementary layer of the active layer has its own photoelectric emission surface (2401, 2402). By choosing the semiconductor materials of the elementary layers, it is possible to obtain an image which has high sensitivity in both the visible spectrum and the near infrared.

6. 发明授权

US10170289B2 Phototube and method of making it 有权
公开(公告)号：US10170289B2
公开(公告)日：2019-01-01
申请号：US15309613
申请日：2015-09-14
申请人： Shenzhen Genorivision Technology Co., Ltd.
发明人： Peiyan Cao , Yurun Liu
IPC分类号： H01J43/28 , H01J40/06 , H01J40/02 , G01J1/44 , H01J9/18
摘要： A phototube suitable for detecting a photon, comprising: an electron ejector configured for emitting electrons in response to an incident photon; a detector configured for collecting the electrons and providing an output signal representative of the incident photon; an electrode configured for applying a voltage to drive the electrons to the detector; and one or more sidewalls forming an envelope of a hole between the electrode and the detector, wherein the electron ejector is inside the hole and bonded to the electrode.

7. 发明授权

US09589757B1 Nano-patterned superconducting surface for high quantum efficiency cathode 有权
标题翻译：用于高量子效率阴极的纳米图案超导表面
公开(公告)号：US09589757B1
公开(公告)日：2017-03-07
申请号：US14862640
申请日：2015-09-23
申请人： JEFFERSON SCIENCE ASSOCIATES, LLC
发明人： Fay Hannon , Pietro Musumeci
IPC分类号： B24B37/04 , H01J9/12 , H01J40/06
CPC分类号： H01J9/12 , B24B37/042 , H01J40/06
摘要： A method for providing a superconducting surface on a laser-driven niobium cathode in order to increase the effective quantum efficiency. The enhanced surface increases the effective quantum efficiency by improving the laser absorption of the surface and enhancing the local electric field. The surface preparation method makes feasible the construction of superconducting radio frequency injectors with niobium as the photocathode. An array of nano-structures are provided on a flat surface of niobium. The nano-structures are dimensionally tailored to interact with a laser of specific wavelength to thereby increase the electron yield of the surface.
摘要翻译：在激光驱动的铌阴极上提供超导表面以提高有效量子效率的方法。增强的表面通过改善表面的激光吸收和增强局部电场来增加有效的量子效率。表面处理方法使得铌作为光电阴极的超导射频注入器的构建变得可行。在铌的平坦表面上提供纳米结构的阵列。纳米结构被尺寸定制以与特定波长的激光相互作用，从而增加表面的电子产率。

8. 发明授权

US09478402B2 Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor 有权
标题翻译：光电倍增管，图像传感器和使用PMT或图像传感器的检测系统
公开(公告)号：US09478402B2
公开(公告)日：2016-10-25
申请号：US14198175
申请日：2014-03-05
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Chuang , David L. Brown , John Fielden
IPC分类号： H01L31/11 , H01L31/167 , H01J40/06 , H01L31/103 , H01J43/08
CPC分类号： H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
摘要： A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
摘要翻译：光电倍增管包括半导体光电阴极和光电二极管。值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层半导体层。半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。半导体光电阴极可以包括例如氮化镓。一个或多个p掺杂氮化镓层。在其他实施例中，半导体光电阴极可以包括硅。该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

9. 发明授权

US09368311B2 Photocathode device that replenishes photoemissive coating 有权
标题翻译：补充光电涂层的光电阴极器件
公开(公告)号：US09368311B2
公开(公告)日：2016-06-14
申请号：US14870072
申请日：2015-09-30
申请人： Los Alamos National Security, LLC
发明人： Nathan A. Moody , David C. Lizon
IPC分类号： H01J40/06 , H01J1/34
CPC分类号： H01J1/34 , H01J9/505 , Y02W30/828
摘要： A photocathode device may replenish its photoemissive coating to replace coating material that desorbs/evaporates during photoemission. A linear actuator system may regulate the release of a replenishment material vapor, such as an alkali metal, from a chamber inside the photocathode device to a porous cathode substrate. The replenishment material deposits on the inner surface of a porous membrane and effuses through the membrane to the outer surface, where it replenishes the photoemissive coating. The rate of replenishment of the photoemissive coating may be adjusted using the linear actuator system to regulate performance of the photocathode device during photoemission. Alternatively, the linear actuator system may adjust a plasma discharge gap between a cartridge containing replenishment material and a metal grid. A potential is applied between the cartridge and the grid, resulting in ejection of metal ions from the cartridge that similarly replenish the photoemissive coating.
摘要翻译：光电阴极器件可以补充其光发射涂层以替代在光电发射期间解吸/蒸发的涂层材料。线性致动器系统可以调节补充材料蒸气（例如碱金属）从光电阴极器件内部的室释放到多孔阴极衬底。补充材料沉积在多孔膜的内表面上并通过膜流出到外表面，在该表面补充光发射涂层。可以使用线性致动器系统调整光发射涂层的补充速率，以调节光电发射期间光电阴极器件的性能。或者，线性致动器系统可以调整包含补充材料的料筒和金属网格之间的等离子体放电间隙。在盒和栅格之间施加电势，导致金属离子从盒中弹出，同样补充光发射涂层。

10. 发明授权

US08888914B2 Process for producing layered member and layered member 有权
标题翻译：层叠体和层叠体的制造方法
公开(公告)号：US08888914B2
公开(公告)日：2014-11-18
申请号：US12761898
申请日：2010-04-16
申请人： Tokuaki Nihashi , Masatomo Sumiya , Minoru Hagino , Shunro Fuke
发明人： Tokuaki Nihashi , Masatomo Sumiya , Minoru Hagino , Shunro Fuke
IPC分类号： C30B25/02 , C30B29/40 , H01J9/12 , H01J1/34 , H01J40/06
CPC分类号： H01L31/1856 , C30B29/403 , H01J1/34 , H01J9/12 , H01J40/06 , H01L31/1848 , H01L31/1852 , Y10S117/902 , Y10S117/915
摘要： The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.
摘要翻译：本发明的目的是提供一种允许较高量子效率的光电表面部件。为了实现该目的，光电表面部件1a是由氮化物型半导体材料形成的结晶层，并且包括氮化物半导体晶体层10，其中从第一表面101到第二表面102的方向为负极性晶体方向，沿着氮化物半导体晶体层10的第一表面101形成的粘合剂层12和粘合剂层12粘合固定在玻璃基板14之间的玻璃基板14 和氮化物半导体晶体层10。

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