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1. 发明授权

US07057199B2 Apparatus and method for the measurement of water depth using a controlled receiver 失效
标题翻译：使用受控接收器测量水深的装置和方法
公开(公告)号：US07057199B2
公开(公告)日：2006-06-06
申请号：US10503547
申请日：2003-01-21
申请人： John Gavin Perry
发明人： John Gavin Perry
IPC分类号： G01N21/85 , H01J3/36
CPC分类号： G01S7/4817 , G01C11/025 , G01C13/008 , G01S7/4811 , G01S7/487 , G01S17/023 , G01S17/87 , G01S17/89
摘要： An Laser Airborne Depth Sounder (LADS) system for the measurement of water depth is disclosed, the system includes a transmitter and a receiver of laser light having at least two wavelengths so as to receive a first reflection from a water surface and a second reflection from a water bottom an a rotating mirror which directs the laser light to the water and receives the second reflection of the laser light from the water bottom and directs the second reflection to the receiver, where the receiver includes an optical shutter (76) adapted for selectively allowing the passage of the second reflection laser light therethrough. The shutter (76) may include a LCD matrix or mechanical light blocking elements. The LCD matrix may be arranged in a central circle (82), an inner ring (80), and an outer ring (78).
摘要翻译：公开了一种用于测量水深的激光机载深度探测器（LADS）系统，该系统包括具有至少两个波长的激光的发射器和接收器，以便从水面接收第一反射，并从第二反射一个水底部，一个旋转镜，它将激光引导到水中并接收来自水底的激光的第二次反射，并将第二反射引导到接收器，其中接收器包括适于选择性的光学快门（76）允许第二反射激光通过其中。快门（76）可以包括LCD矩阵或机械遮光元件。 LCD矩阵可以布置在中心圆（82），内环（80）和外环（78）中。

2. 发明授权

US10615013B2 Low temperature, photonically augmented electron source system 有权
公开(公告)号：US10615013B2
公开(公告)日：2020-04-07
申请号：US16406008
申请日：2019-05-08
申请人： Kristin Cortella Sampayan
发明人： Kristin Cortella Sampayan
IPC分类号： H01J40/06 , H01J3/36
CPC分类号： H01J40/06 , H01J3/36
摘要： An electron source system utilizing photon enhanced thermionic emission to create a source of well controlled electrons for injection into a series of lenses so that the beam can be fashioned to meet the particular specification for a given use is disclosed. Because of the recent increased understanding and characterization of the bandgap in certain materials, a simplified system can now be realized to overcome the potential barrier at the surface. With this system, only low electric fields with moderate temperatures (˜500 ° C.) are required. The resulting system enables much easier focusing of the electron beam because the random component of the energy of the electrons is much lower than that of a conventional system. The system comprises an emitter of wide bandgap material, a first light source and a heating element wherein the heating element provides moderate warming to the wide bandgap material and the light source provides photonic excitation to the material, causing electrons to be emitted into an optical system to manipulate the emitted electrons.

3. 发明授权

US09899182B2 Corner rounding correction for electron beam (Ebeam) direct write system 有权
公开(公告)号：US09899182B2
公开(公告)日：2018-02-20
申请号：US15329880
申请日：2014-12-22
申请人： INTEL CORPORATION
发明人： Yan A. Borodovsky
IPC分类号： H01J3/36 , G03F7/20 , H01L21/027 , H01J37/04 , H01J37/317
CPC分类号： H01J37/045 , H01J37/3026 , H01J37/3174 , H01J37/3177 , H01J2237/0435 , H01J2237/0453 , H01J2237/30422 , H01J2237/30438 , H01J2237/31762 , H01J2237/31764 , H01J2237/31769
摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

4. 发明授权

US09224571B2 Photocathode high-frequency electron-gun cavity apparatus 有权
标题翻译：光电阴极高频电子枪腔装置
公开(公告)号：US09224571B2
公开(公告)日：2015-12-29
申请号：US13825918
申请日：2011-09-26
申请人： Junji Urakawa , Nobuhiro Terunuma , Toshikazu Takatomi
发明人： Junji Urakawa , Nobuhiro Terunuma , Toshikazu Takatomi
IPC分类号： H01J23/20 , H01J29/48 , H05H7/08 , H01J3/02 , H01J3/36 , H05G2/00
CPC分类号： H01J29/481 , H01J3/021 , H01J3/36 , H01J23/06 , H01J25/04 , H01J2237/0432 , H01J2237/04735 , H01J2237/062 , H01J2237/06333 , H05G2/00 , H05H7/08 , H05H2007/084
摘要： A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port (10), and a high-frequency resonant tuner (16). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell (5) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.
摘要翻译：本发明的光电阴极高频电子枪腔装置设置有高频加速腔（1），光电阴极（8,15），激光进入口（9），高频电力输入耦合器端口（10）和高频谐振调谐器（16）。这里，该装置采用超小型高频加速器腔，其包含在其内表面上仅形成有平滑且曲面的空腔，而不具有用于防止放电的锐角部，从而获得较高强度的高频电场，提高高频共振稳定性。此外，光电阴极被布置在高频加速腔的半电池（5）的端部，用于使光电阴极面的电场强度最大化，通过将激光进入端口布置在面对的位置来确保激光的垂直入射到高频加速腔的电子束提取口后面的光电阴极，用于使短束光电子的质量最大化，并且高频电力输入耦合器端口布置在高频加速腔的单元的侧面用于提高高频电场强度。根据上述，可以提供能够产生高强度和高质量电子束的小型光电阴极高频电子枪腔装置。

5. 发明授权

US08835848B2 Ultra-miniaturized electron optical microcolumn 有权
标题翻译：超小型电子光学微柱
公开(公告)号：US08835848B2
公开(公告)日：2014-09-16
申请号：US14180350
申请日：2014-02-13
申请人： Industry-University Cooperation Foundation Sunmoon University
发明人： Tae Sik Oh , Ho Seob Kim , Dae Wook Kim , Seung-Joon Ahn
IPC分类号： H01J29/46 , H01J3/36 , H01J3/14 , H01J3/26
CPC分类号： H01J3/26 , H01J3/021 , H01J3/12 , H01J3/14 , H01J3/18 , H01J3/30 , H01J37/04 , H01J2237/1205
摘要： An ultra-miniaturized electron optical microcolumn is provided. The electron optical microcolumn includes an electron-emitting source emitting electrons using a field emission principle, an extraction electrode causing the emission of electrons from the electron-emitting source, a focusing electrode to which voltage is flexibly applied in response to a working distance to a target for regulating a focusing force of electron beams emitted from the electron-emitting source, an acceleration electrode accelerating electrons emitted by the extraction electrode, a limit electrode regulating an amount and a size of electron beams using electrons accelerated by the acceleration electrode, and a deflector deflecting electron beams towards the target.
摘要翻译：提供超小型电子光学微柱。电子光学微柱包括使用场致发射原理发射电子的电子发射源，引起来自电子发射源的电子的引出电极，响应于工作距离而被柔性施加电压的聚焦电极用于调节从电子发射源发射的电子束的聚焦力的目标，加速由引出电极发射的电子的加速电极，限制电极使用由加速电极加速的电子来调节电子束的量和尺寸，以及偏转器偏转电子束朝向目标。

6. 发明申请

US20120200613A1 FLUORESCENT LAMP AND IMAGE DISPLAY APPARATUS 有权
标题翻译：荧光灯和图像显示装置
公开(公告)号：US20120200613A1
公开(公告)日：2012-08-09
申请号：US13500312
申请日：2010-02-23
申请人： Masakazu Sagawa , Shin Imamura , Toshiaki Kusunoki
发明人： Masakazu Sagawa , Shin Imamura , Toshiaki Kusunoki
IPC分类号： G09G5/10 , H01J3/36 , H01J63/04
CPC分类号： H01J17/00 , H01J11/22 , H01J11/34 , H01J11/50 , H01J17/04 , H01J17/066 , H01J17/20 , H01J17/49 , H01J61/16 , H01J65/04
摘要： To obtain effective luminance and light efficiency while avoiding discharge, it is necessary to sufficiently increase a current luminous efficiency of gas and an electron emission efficiency of an electron source. In a fluorescent lamp, an anode electric field is increased by setting a pressure of a noble gas or a molecular gas enclosed to 10 kPa or higher, setting an anode voltage to 240 V or lower, and setting a substrate distance to 0.4 mm or smaller. Furthermore, the resulting effect that the current luminous efficiency is increased in proportion to the electric field is used. Also, by applying a MIM electron source having an electron emission efficiency exceeding 10% as an electron source, a non-discharge fluorescent lamp having a light emission luminance equal to or larger than 104 [cd/m2] and a light emission efficiency equal to or larger than 120 [lm/W] is achieved.
摘要翻译：为了在避免放电的同时获得有效的亮度和光效率，必须充分提高气体的电流发光效率和电子源的电子发射效率。在荧光灯中，通过将惰性气体或分子气体的压力设定为10kPa以上，将阳极电压设定为240V以下，将基板的距离设定为0.4mm以下，来增大阳极电场。此外，使用与电场成比例地增加当前发光效率的结果。此外，通过应用电子发射效率超过10％的MIM电子源作为电子源，具有等于或大于104 [cd / m 2]的发光亮度和等于或等于的发光效率的非放电荧光灯或大于120 [lm / W]。

7. 发明授权

US08089050B2 Method and apparatus for modifying a ribbon-shaped ion beam 有权
标题翻译：用于改变带状离子束的方法和装置
公开(公告)号：US08089050B2
公开(公告)日：2012-01-03
申请号：US12621689
申请日：2009-11-19
申请人： Kenneth Harry Purser , William H. Park
发明人： Kenneth Harry Purser , William H. Park
IPC分类号： H01J3/36
CPC分类号： G21K1/093 , H01J37/12 , H01J37/153 , H01J37/3171 , H01J2237/1405 , H01J2237/1534 , H01J2237/30477
摘要： A ribbon-shaped ion beam is modified using multiple coil structures on a pair of opposed ferromagnetic bars. The coil structures comprise continuous windings which have predetermined variations along the length of the bar of turns per unit length. In an example, one coil structure may have uniform turns per unit length along the bar, so that energizing the coil structures forms a magnetic field component extending across the gap between the bars with a quadrupole intensity distribution. A second coil structure may have turns per unit length varying to produce a hexapole magnetic field intensity distribution. Further coil structures may be provided to produce octopole and decapole magnetic field distributions. The coil structures may be energized to produce magnetic fields parallel to the bars which vary along the length of the bars, to twist or flatten the ribbon-shaped beam.
摘要翻译：在一对相对的铁磁条上使用多个线圈结构修改带状离子束。线圈结构包括沿着每单位长度的匝数的长度具有预定变化的连续绕组。在一个示例中，一个线圈结构可以具有沿着棒的每单位长度的均匀匝数，使得对线圈结构的通电形成一个以四极强度分布延伸穿过棒之间的间隙的磁场分量。第二线圈结构可以具有每单位长度的转弯以产生六极磁场强度分布。可以提供另外的线圈结构以产生八极和十极磁场分布。线圈结构可以被激励以产生平行于棒的磁场，其沿着杆的长度变化，以扭曲或平坦化带形梁。

8. 发明申请

US20050285541A1 Electron beam RF amplifier and emitter 失效
标题翻译：电子束射频放大器和发射极
公开(公告)号：US20050285541A1
公开(公告)日：2005-12-29
申请号：US10875489
申请日：2004-06-23
申请人： Robert LeChevalier
发明人： Robert LeChevalier
IPC分类号： G09G3/10 , H01J3/36 , H01J21/24
CPC分类号： H01J3/36 , H01J21/24
摘要： RF field is sensed to produce an incoming voltage that drives a microarray of electron guns in a sweep pattern towards a detector array. The electron guns emit a beam current that may amplify the incoming voltage signal, and the detector material may be selected to amplify the beam current at the detector, for example, by avalanche and/or cascade in a Schottky material, to provide a low current, high gain amplification. The microarrays may be arranged in various combinations to produce successive amplifications, frequency multipliers, transmit-receive amplifiers, crossbar switches, mixers, beamformers, and selective polarization devices, among other such devices.
摘要翻译： RF场被感测以产生输入电压，其以扫描图案朝向检测器阵列驱动电子枪的微阵列。电子枪发射可以放大输入电压信号的束电流，并且可以选择检测器材料以放大检测器处的电流，例如通过雪崩和/或级联在肖特基材料中以提供低电流，高增益放大。可以以各种组合布置微阵列以产生连续的放大，倍频器，发射 - 接收放大器，交叉开关，混频器，波束形成器和选择性极化器件等。

9. 发明授权

US10971347B2 Charged particle beam apparatus 有权
公开(公告)号：US10971347B2
公开(公告)日：2021-04-06
申请号：US16306911
申请日：2016-06-23
申请人： Hitachi High-Technologies Corporation
发明人： Mitsuhiro Nakamura , Hironori Itabashi , Hirofumi Satou , Tsutomu Saito , Masahiro Sasajima , Natsuki Tsuno , Yohei Nakamura
IPC分类号： H01J49/08 , H01J3/26 , H01J3/36 , H01J37/147 , H01J49/10
摘要： In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.

10. 发明申请

US20210020422A1 CHARGED PARTICLE BEAM APPARATUS 有权
公开(公告)号：US20210020422A1
公开(公告)日：2021-01-21
申请号：US16306911
申请日：2016-06-23
申请人： Hitachi High-Technologies Corporation
发明人： Mitsuhiro NAKAMURA , Hironori ITABASHI , Hirofumi SATOU , Tsutomu SAITO , Masahiro SASAJIMA , Natsuki TSUNO , Yohei NAKAMURA
IPC分类号： H01J49/08 , H01J37/147 , H01J49/10 , H01J3/36 , H01J3/26
摘要： In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.

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