专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11551932B2 Photonuclear transmutation doping in gallium-based semiconductor materials 有权
公开(公告)号：US11551932B2
公开(公告)日：2023-01-10
申请号：US16905506
申请日：2020-06-18
申请人： The Curators of the University of Missouri
发明人： Jae Wan Kwon , Quang Nguyen
IPC分类号： H01L21/00 , H01L21/261 , H01L21/02
摘要： The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.

2. 发明授权

US11250966B2 Apparatus and method for neutron transmutation doping of semiconductor wafers 有权
公开(公告)号：US11250966B2
公开(公告)日：2022-02-15
申请号：US16569676
申请日：2019-09-13
申请人： Infineon Technologies AG
发明人： Markus Bina , Hans-Joachim Schulze , Werner Schustereder
IPC分类号： G21G1/06 , H01L21/261 , C30B31/20 , G21G4/02
摘要： An apparatus for processing a plurality of semiconductor wafers, the apparatus including a spallation chamber, a neutron producing material mounted in the spallation chamber, a neutron moderator, and an irradiation chamber coupled to the spallation chamber, wherein the neutron moderator is disposed between the spallation chamber and the irradiation chamber, wherein the irradiation chamber is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that a first surface of one semiconductor wafer faces a second surface of another semiconductor wafer.

3. 发明授权

US5904767A Neutron transmutation doping of silicon single crystals 失效
标题翻译：硅单晶的中子转化掺杂
公开(公告)号：US5904767A
公开(公告)日：1999-05-18
申请号：US705462
申请日：1996-08-29
申请人： Chungpin Liao
发明人： Chungpin Liao
IPC分类号： C30B29/06 , C30B31/20 , G06F19/00 , H01L21/261 , C30B15/02
CPC分类号： C30B31/20
摘要： A working recipe for NTD CZ and MCZ silicon wafer production is provided. It teaches that a neutron-enhanced S-curve can be constructed by noting that a silicon interstitial (Si.sub.I), emitted due to volume change during the traditional oxygen precipitation, can join a neutron-created vacancy in facilitating further oxygen loss via precipitation. The former relation is: 2Si+2O.sub.I .fwdarw.SiO.sub.2 +Si.sub.i the latter is: vacancy+Si .sub.I +2O.sub.I .fwdarw.SiO ..sub.2 The total loss of oxygen interstitials is:�O.sub.I !=Max(�O .sub.I !.sub.0 �O .sub.I !.sub.s +min{2(�Si .sub.I !.sub.s +�Si .sub.I !.sub.0). �vacancy!}),with subscripts 0 and s standing for initial state and S-curve prediction, respectively; �Si.sub.I !.sub.s equal to 0.5�O .sub.I !.sub.s, and �vacancy! readily obtainable by computer simulation. �vacancy! is a function of the cadmium ratio (CR), silicon sample thickness, and total neutron fluence. The final oxygen interstitial content is: �0.sub.I !.sub.f =max{�O.sub.I !.sub.0 -�O.sub.I !,0}. Evidence for the effectiveness of the recipe taught by the present invention is provided in the form of characterization results derived from MOS capacitors and PN junctions built upon wafers produced according to the recipe. These show that the nominal minority carrier lifetime, interface density, and leakage currents under reverse bias are the same as those from a blank prime wafer.
摘要翻译：提供NTD CZ和MCZ硅晶片生产的工作配方。它教导中子增强的S曲线可以通过注意到在传统的氧沉淀期间由于体积变化而发射的硅间隙（SiI）可以结合中子产生的空位来促进通过沉淀进一步的氧损失。前一关系是：2Si + 2OI-> SiO2 + Sii后者是：空位+ Si I + 2OI-> SiO .2氧间隙的总损耗是：+ Z [OI] = Max（[OI] 0 + Z [OI] s + min {2（[Si I] s + [Si I] 0）。[空位]}），下标0和s分别表示初始状态和S曲线预测; [SiI]等于0.5 + Z [O I] s，[空位]可通过计算机模拟得到。 [空位]是镉比（CR），硅样品厚度和总中子通量的函数。最终的氧气间质含量为：[0I] f = max {[OI] 0- + Z [OI]，0}。本发明教导的食谱的有效性的证据是以由根据配方生产的晶片上的MOS电容器和PN结产生的表征结果的形式提供的。这些表明，反向偏置下的标称少数载流子寿命，界面密度和漏电流与来自空白原始晶圆的相同。

4. 发明授权

US5311051A Field effect transistor with offset region 失效
标题翻译：具有偏移区域的场效应晶体管
公开(公告)号：US5311051A
公开(公告)日：1994-05-10
申请号：US854084
申请日：1992-03-19
申请人： Masaru Tukizi
发明人： Masaru Tukizi
IPC分类号： H01L21/261 , H01L21/265 , H01L29/08 , H01L29/78 , H01L29/76 , H01L29/94
CPC分类号： H01L29/0847 , H01L29/7835
摘要： In a high breakdown voltage MOSFET having an offset region consisting of a low concentration impurity layer with the same conductivity type as that of a drain region between a channel region and the drain region, an impurity layer with conductivity type opposite to that of the drain region is formed on the surface of the offset region. With such a constitution, even for the case when the energy levels generated in the interface of silicon/oxide film under the environment of exposure to radiations act as the scattering centers, the drain current will not be affected by the levels. Further, the reliability of the high breakdown voltage MOSFET can be improved markedly, by suppressing the deterioration in the charge mobility due to generation of the interface levels and the accompanying reduction in the drain current.
摘要翻译：在具有与沟道区域和漏极区域之间的漏极区域具有相同导电类型的低浓度杂质层构成的偏移区域的高击穿电压MOSFET中，具有与漏极区域相反的导电类型的杂质层形成在偏移区域的表面上。通过这样的结构，即使在辐射照射环境下的硅/氧化膜的界面产生的能量水平作为散射中心的情况下，漏极电流也不受电平的影响。此外，通过抑制由于界面电平的产生以及随之而来的漏极电流的降低导致的电荷迁移率的劣化，可以显着地提高高击穿电压MOSFET的可靠性。

5. 发明授权

US4260448A Process for decreasing crystal damages in the production of n-doped silicon by neutron bombardment 失效
标题翻译：通过中子轰击在减少n掺杂硅的生产中降低晶体损伤的方法
公开(公告)号：US4260448A
公开(公告)日：1981-04-07
申请号：US889172
申请日：1978-03-23
申请人： Heinz Herzer
发明人： Heinz Herzer
IPC分类号： G21G1/06 , H01L21/261 , C30B31/20
CPC分类号： H01L21/261 , G21G1/06
摘要： A process for decreasing crystal damages in the production of n-doped silicon by neutron bombardment, in which phosphorus atoms are formed from silicon by nuclear transmutation, wherein the number of desired phosphorus atoms N.sub.31.sbsb.p per cc, can be calculated by the known equationN.sub.31.sbsb.p =N.sub.30.sbsb.Si .multidot..sigma..multidot..phi..multidot.tin which N.sub.30.sbsb.Si is the number of .sup.30 Si-isotopes per cc, .sigma.=0.13 barn effective cross section, .phi. the flux density of the thermal neutrons per cm.sup.2 and t the bombardment time in seconds, the process consisting of adjusting the ratio between thermal and fast neutrons in the neutron flux acting upon the bombarded silicon work piece, so that the higher the ratio, the higher the specific resistance of the bombarded silicon, and thus, the lower the number of N.sub.31.sbsb.p and therewith the acting dose .phi..multidot.t.
摘要翻译：通过中子轰击减少在n掺杂硅中产生晶体损伤的方法，其中磷原子由硅通过核变换形成，其中所需磷原子数N31p / cc可以通过已知的方程式计算N31p = N30Six 西格玛x phi xtin，其中N30Si是每cc的30Si同位素数，sigma = 0.13巴有效截面，phi是每平方厘米热中子的通量密度，t是以秒为单位的轰击时间，该过程由调整作用于被轰击的硅工件的中子通量中的热和快中子，使得比率越高，被轰击的硅的电阻率越高，因此N31p的数量越少，并且由此施加剂量。

6. 发明授权

US4048508A Apparatus for doping a semiconductor crystalline rod 失效
标题翻译：用于掺杂半导体结晶棒的装置
公开(公告)号：US4048508A
公开(公告)日：1977-09-13
申请号：US603680
申请日：1975-08-11
申请人： Joachim Martin , Ernst Haas , Manfred Schnoeller
发明人： Joachim Martin , Ernst Haas , Manfred Schnoeller
IPC分类号： C30B31/20 , G21G1/06 , G21K1/00 , G21K5/08 , H01L21/261 , B01J17/34
CPC分类号： G21K1/00 , C30B31/20 , G21K5/08
摘要： An apparatus for doping a semiconductor crystalline rod by nuclear or radiogenic reactions comprised of a hollow irradiation housing having axially and rotatably movable rod support means within the chamber thereof and a neutron conductive sleeve connected with the housing and providing communication between a neutron source and the housing chamber. Accurate and controlled doping of a semiconductor crystalline rod mounted on the rod support means within the housing chamber occurs via controlled rod movement in relation to the neutron source.
摘要翻译：一种用于通过核或放射反应掺杂半导体晶体棒的装置，包括在其室内具有轴向和可旋转地移动的杆支撑装置的中空辐射壳体和与壳体连接并提供中子源和壳体之间的连通的中子导电套筒房间。安装在壳体室内的杆支撑装置上的半导体晶体棒的精确和受控的掺杂通过相对于中子源的受控棒移动发生。

7. 发明申请

US20200005957A1 APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUCTOR WAFERS 审中-公开
公开(公告)号：US20200005957A1
公开(公告)日：2020-01-02
申请号：US16569676
申请日：2019-09-13
申请人： Infineon Technologies AG
发明人： Markus BINA , Hans-Joachim Schulze , Werner Schustereder
IPC分类号： G21G1/06 , H01L21/261 , C30B31/20
摘要： An apparatus for processing a plurality of semiconductor wafers, the apparatus including a spallation chamber, a neutron producing material mounted in the spallation chamber, a neutron moderator, and an irradiation chamber coupled to the spallation chamber, wherein the neutron moderator is disposed between the spallation chamber and the irradiation chamber, wherein the irradiation chamber is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that a first surface of one semiconductor wafer faces a second surface of another semiconductor wafer.

8. 发明授权

US10468148B2 Apparatus and method for neutron transmutation doping of semiconductor wafers 有权
公开(公告)号：US10468148B2
公开(公告)日：2019-11-05
申请号：US15494599
申请日：2017-04-24
申请人： Infineon Technologies AG
发明人： Markus Bina , Hans-Joachim Schulze , Werner Schustereder
IPC分类号： G21G1/06 , C30B31/20 , H01L21/261 , G21G4/02
摘要： In various embodiments, a method of processing one or more semiconductor wafers is provided. The method includes positioning the one or more semiconductor wafers in an irradiation chamber, generating a neutron flux in a spallation chamber coupled to the irradiation chamber, moderating the neutron flux to produce a thermal neutron flux, and exposing the one or more semiconductor wafers to the thermal neutron flux to thereby induce the creation of dopant atoms in the one or more semiconductor wafers.

9. 发明授权

US6100168A Location selective transmutation doping on silicon wafers using high energy deuterons 有权
标题翻译：使用高能量氘核在硅晶片上的位置选择性转换掺杂
公开(公告)号：US6100168A
公开(公告)日：2000-08-08
申请号：US192452
申请日：1998-11-16
申请人： Chungpin Liao , Meihua Chao , Shan-Ming Lan
发明人： Chungpin Liao , Meihua Chao , Shan-Ming Lan
IPC分类号： H01L21/261
CPC分类号： H01L21/261 , Y10S438/974
摘要： Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of deuterons is described. A key feature of the invention is that the deuterons are required to have an energy of at least 4 MeV, to overcome the Coulomb barrier and thus achieve practical utility. When this is done, transmutationally formed phosphorus in concentrations as high as 10.sup.16 atoms per cc. are formed from deuteron beams having a fluence as low as 10.sup.19 deuterons per square cm. As a byproduct of the process sulfur is also formed in a practical concentration range of about 10.sup.14 atoms per cc. This can be removed by annealing at temperatures in the order of 700 .degree. C. Additional sulfur continues to form as a result of the decay of P.sup.32. Because of the high energy of the deuterons, several silicon wafers may be processed simultaneously if a suitable mask is available and proper alignment is achieved. It is expected that the additional phosphorus is essentially uniformly deposited throughout the entire thickness of a wafer. Masks, either freestanding or contact, may also be used in order to limit the transmuted regions to particular desired areas.
摘要翻译：描述了通过氘核的束对硅晶片的轰击的硅的有效的transm变掺杂。本发明的一个关键特征是氘核需要具有至少4MeV的能量，以克服库仑势垒，从而实现实用性。当这样做时，以浓度高达每立方厘米1016原子的透射形成的磷。由具有低至1019氘核每平方厘米的注量的氘核束形成。作为该方法的副产物，硫也在约1014个原子/ cc的实用浓度范围内形成。这可以通过在700℃的温度退火而除去。由于P32的衰变，附加的硫继续形成。由于氘核的高能量，如果合适的掩模可用并且实现了适当的对准，则可以同时处理几个硅晶片。预期在晶片的整个厚度上附加的磷基本均匀地沉积。也可以使用独立或接触的面罩，以便将变形区域限制到特定的所需区域。

10. 发明授权

US6028329A Bipolar junction transistor device and a method of fabricating the same 失效
标题翻译：双极结晶体管器件及其制造方法
公开(公告)号：US6028329A
公开(公告)日：2000-02-22
申请号：US925357
申请日：1997-09-08
申请人： Chungpin Liao
发明人： Chungpin Liao
IPC分类号： H01L21/261 , H01L21/331 , H01L21/761 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/66295 , H01L21/261 , H01L21/761 , H01L29/7375
摘要： A novel bipolar junction transistor device and a method of fabricating the same are proposed. In accordance with the present invention, a p-type silicon substrate is vertically all-through transmuted into an n-type region locally by using neutron transmutation doping, such that the epitaxy layer and buried layer used in conventional BJT devices can be replaced and isolation between devices can be easily achieved. Consequently, the present invention is characterized by a higher voltage rating than that which can be achieved isolation; and the present invention is also characterized as having compatibility with the MOS.
摘要翻译：提出了一种新颖的双极结型晶体管器件及其制造方法。根据本发明，通过使用中子转换掺杂，p型硅衬底被垂直地全部变换为n型区域，使得可以替代和隔离常规BJT器件中使用的外延层和掩埋层设备之间可以轻松实现。因此，本发明的特征在于比可实现隔离的额定电压更高的电压额定值; 本发明的特征还在于与MOS的兼容性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式