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    • 4. 发明授权
    • Compact image sensor layout with charge multiplying register
    • 具有充电倍增寄存器的紧凑型图像传感器布局
    • US06784412B2
    • 2004-08-31
    • US10217181
    • 2002-08-12
    • Jaroslav Hynecek
    • Jaroslav Hynecek
    • H01L2700
    • H01L27/14831
    • The image sensing device incorporates a charge multiplication function in its serial register. The design layout is compact in size and the charge multiplication register consists of multi-channel sections that are evenly positioned around the periphery of the image sensing area. The individual charge multiplying register sections are coupled together by only 90-degree multi-channel turns located at the image area array corners. The device allows for the optical image sensing area center to be located near the chip center and consequently near the mechanical package center with the minimum silicon chip area sacrifice.
    • 图像感测装置在其串行寄存器中包含电荷倍增功能。 设计布局尺寸紧凑,充电倍增寄存器由均匀定位在图像感测区域外围的多通道部分组成。 各个电荷乘法寄存器部分通过位于图像区域阵列拐角处的仅90度的多通道匝耦合在一起。 该器件允许光学图像感测区域中心位于芯片中心附近,并因此靠近机械封装中心,牺牲最小的硅芯片面积。
    • 5. 发明授权
    • System, circuit and method providing a dynamic range pixel cell with blooming protection
    • 系统,电路和方法提供具有防晕保护的动态范围像素单元
    • US06777662B2
    • 2004-08-17
    • US10208217
    • 2002-07-30
    • Clifford I. DrowleyShrinath Ramaswami
    • Clifford I. DrowleyShrinath Ramaswami
    • H01L2700
    • H04N5/35527H04N5/3559H04N5/374
    • An extended dynamic range pixel cell providing blooming protection is disclosed herein. By applying a timed varying signal to a shunt transistor in order to shunt excess charge generated by a photosensor in response to high intensity illumination, blooming protection can be provided. In particular configurations, blooming protection is provided not only during an integration period but also during a readout period when the pixel cell is generally most susceptible to blooming problems. The time varying voltage is also used to extend the dynamic range of the pixel cell thereby increasing the pixel cells usefulness in high contrast conditions, such as bright sunlight casting deep shadows, nighttime automotive applications, and the like.
    • 本文公开了提供防晕保护的扩展动态范围像素单元。 通过对分流晶体管施加定时变化的信号,以便响应于高强度照明而分流由光电传感器产生的多余电荷,可以提供防霜保护。 在特定配置中,不仅在积分期间,而且在像素单元通常最容易受到起霜问题的读出期间,提供防晕保护。 时变电压也用于扩展像素单元的动态范围,从而增加像高亮度阳光投射深阴影,夜间汽车应用等高对比度条件下的像素单元的有用性。
    • 7. 发明授权
    • Image sensors with underlying and lateral insulator structures
    • 具有底层和侧面绝缘体结构的图像传感器
    • US06737626B1
    • 2004-05-18
    • US09923274
    • 2001-08-06
    • William R. BidermannRicardo J. Motta
    • William R. BidermannRicardo J. Motta
    • H01L2700
    • H01L27/14609H01L27/14623H01L27/14627H01L27/1463
    • An integrated image sensor having a conditioned top silicon oxide layer and/or one or more additional insulating layers/structures to reduce optical and/or electrical noise. The image sensor has an array of one or more pixels, each pixel having a photoelement formed on a substrate and configured to generate an electrical signal in response to incident light, and associated circuitry formed on the substrate and configured to process the electrical signal generated in the photoelement. In one embodiment, a portion of a top insulating layer in the integrated image sensor corresponding to each photoelement has a thickness different from the thickness of a portion of the top insulating layer corresponding to its associated circuitry to inhibit the flow of light between the associated circuitry and the photoelement and/or between the pixel and an adjacent pixel in the array. In another embodiment, the image sensor has one or more insulating structures formed on the substrate and configured to inhibit the flow of electricity between a photoelement and its associated circuitry and/or the pixel and an adjacent pixel in the array. The present invention can reduce optical and/or electrical noise and crosstalk to improve image quality and diminish artifacts in the image sensor's output.
    • 具有经调理的顶部氧化硅层和/或一个或多个附加绝缘层/结构的集成图像传感器,以减少光学和/或电气噪声。 图像传感器具有一个或多个像素的阵列,每个像素具有形成在衬底上并被配置为响应于入射光产生电信号的光电元件,以及形成在衬底上的相关电路,并被配置为处理在 光电元件。 在一个实施例中,对应于每个光电元件的集成图像传感器中的顶部绝缘层的一部分具有不同于与其相关电路对应的顶部绝缘层的一部分的厚度的厚度,以抑制相关电路之间的光流 和像素与阵列中的相邻像素之间和/或像素之间。 在另一个实施例中,图像传感器具有形成在衬底上的一个或多个绝缘结构,并且被配置为抑制光电元件及其相关联的电路和/或阵列中的像素和相邻像素之间的电流。 本发明可以减少光学和/或电噪声和串扰,以改善图像质量并减少图像传感器输出中的伪影。