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    • 3. 发明授权
    • Audio amplifier
    • 音频放大器
    • US09071212B2
    • 2015-06-30
    • US13628431
    • 2012-09-27
    • d&b audiotechnik GmbH
    • Sven MoertelClaus RenftleHermann Vogt
    • H03F13/00H03F1/52H03F3/20
    • H03F13/00H03F1/52H03F3/20
    • An audio amplifier may comprise a signal limiting circuit and a power amplifier. The signal limiting circuit may be configured to limit an audio signal received at an input and to provide it as a limited audio signal at an output. The power amplifier may have a supply connection which may be coupled to a power supply unit in order to supply power to the power amplifier. The power amplifier may be configured to amplify a signal, which may be based on the limited audio signal, and to provide it as a level-limited audio signal at an output which may be coupled to a load, so that the load may be operated at limited power. The signal limiting circuit may be configured to produce an audio signal which may be limited depending on the load.
    • 音频放大器可以包括信号限制电路和功率放大器。 信号限制电路可以被配置为限制在输入处接收的音频信号,并将其提供为输出处的有限音频信号。 功率放大器可以具有可以耦合到电源单元的供电连接,以向功率放大器供电。 功率放大器可以被配置为放大可以基于受限音频信号的信号,并且将其提供为可以耦合到负载的输出处的电平限制音频信号,使得负载可以被操作 在有限的权力。 信号限制电路可以被配置为产生根据负载可能受到限制的音频信号。
    • 4. 发明申请
    • AUDIO AMPLIFIER
    • 音频放大器
    • US20130083947A1
    • 2013-04-04
    • US13628431
    • 2012-09-27
    • d&b audiotechnik GmbH
    • Sven MoertelClaus RenftleHermann Vogt
    • H03F13/00
    • H03F13/00H03F1/52H03F3/20
    • An audio amplifier may comprise a signal limiting circuit and a power amplifier. The signal limiting circuit may be configured to limit an audio signal received at an input and to provide it as a limited audio signal at an output. The power amplifier may have a supply connection which may be coupled to a power supply unit in order to supply power to the power amplifier. The power amplifier may be configured to amplify a signal, which may be based on the limited audio signal, and to provide it as a level-limited audio signal at an output which may be coupled to a load, so that the load may be operated at limited power. The signal limiting circuit may be configured to produce an audio signal which may be limited depending on the load.
    • 音频放大器可以包括信号限制电路和功率放大器。 信号限制电路可以被配置为限制在输入处接收的音频信号,并将其提供为输出处的有限音频信号。 功率放大器可以具有可以耦合到电源单元的供电连接,以向功率放大器供电。 功率放大器可以被配置为放大可以基于受限音频信号的信号,并且将其提供为可以耦合到负载的输出处的电平限制音频信号,使得负载可以被操作 在有限的权力。 信号限制电路可以被配置为产生根据负载可能受到限制的音频信号。
    • 7. 发明授权
    • Tapped surface acoustic wave delay line
    • 敲击表面声波延迟线
    • US4088969A
    • 1978-05-09
    • US788874
    • 1977-04-19
    • James D. CrowleyJoseph F. WellerThomas G. Giallorenzi
    • James D. CrowleyJoseph F. WellerThomas G. Giallorenzi
    • G10K11/36H03F13/00H03H9/42H03H9/30H01L45/02H03F3/04H03F3/55
    • H03F13/00G10K11/36H03H9/423
    • A tapped surface acoustic wave (SAW) delay line with time-resolved outputssing piezoelectric leaky wave coupling and bulk wave amplification, and having low loss characteristics. A solid piezoelectric semiconductor is placed adjacent to a solid piezoelectric substrate. A pulsed rf input signal is applied to interdigital transducers (IDT) on the substrate. The applied signal launches a SAW in the substrate in a direction parallel to the interface between the substrate and the piezoelectric semiconductor solid. Upon reaching the interface, the SAW is piezoelectrically leaky-wave coupled across an air gap to a bulk acoustic wave in the piezoelectric semiconductor. Reflections of the bulk wave occur at both surfaces of the piezoelectric semiconductor, and piezoelectrically couples back across the air gap to excite a SAW on the piezoelectric substrate. The resultant rf output includes the normal delayed SAW pulse and additional delayed and time-resolved pulses. The amplitude of the bulk wave may be increased using bulk wave amplification.
    • 具有时间分辨输出的抽头声表面波(SAW)延迟线,采用压电泄漏波耦合和体波放大,具有低损耗特性。 将固体压电半导体放置成与固体压电基板相邻。 脉冲rf输入信号被施加到基板上的指数间换能器(IDT)。 所施加的信号在平行于衬底和压电半导体固体之间的界面的方向上在衬底中发射SAW。 在到达界面时,SAW在压电半导体中横跨气隙压电泄漏波耦合到体声波。 体波的反射发生在压电半导体的两个表面,并且压电耦合回穿过气隙,以激发压电衬底上的SAW。 所得到的rf输出包括正常延迟的SAW脉冲和附加的延迟和时间分辨脉冲。 可以使用体波放大来增加体波的幅度。
    • 8. 发明授权
    • Acoustic transducer with direct current output
    • 具有直流输出的声学传感器
    • US3909741A
    • 1975-09-30
    • US52056874
    • 1974-11-04
    • GEN ELECTRIC
    • HARRIS LAWRENCE A
    • H03F13/00H03F3/04
    • H03F13/00
    • An acoustic transducer which produces a direct current output signal suitable for capacitive storage is described. Incident acoustic energy is converted to a surface wave in a piezoelectric rod. A first slab of semiconductor material lying in close proximity to the surface of the rod forms a traveling wave amplifier. Energy is coupled from the amplifier bias circuit to the surface wave. A second slab of semiconductor material lying proximate to the piezoelectric rod forms a traveling wave attenuator. Energy coupled from the surface wave to the attenuator changes the conductivity of the second semiconductor slab. Direct current flow in the attenuator bias circuit varies in proportion to the incident acoustic wave intensity. In a second embodiment a reference surface wave is mixed with the output of the traveling wave amplifier. The piezoelectric rod is stressed into a non-linear region producing a direct current output signal which is proportional to the intensity of the incident acoustic energy.
    • 描述了产生适合电容存储的直流输出信号的声换能器。 入射声能被转换为压电杆中的表面波。 靠近杆表面的第一半导体材料板形成行波放大器。 能量从放大器偏置电路耦合到表面波。 靠近压电杆的第二半导体材料板形成行波衰减器。 从表面波耦合到衰减器的能量改变了第二半导体板的导电性。 衰减器偏置电路中的直流电流与入射的声波强度成比例地变化。
    • 10. 发明授权
    • Solid-state, acoustic-wave amplifiers
    • 固态,声波放大器
    • US3686579A
    • 1972-08-22
    • US3686579D
    • 1971-06-21
    • ZENITH RADIO CORP
    • EVERETT PETER G
    • H03F13/00H03F3/04
    • H03F13/00
    • In a signal amplifier, an input transducer launches acoustic surface waves at a given velocity along a predetermined path on a piezoelectric substrate. An output transducer responds to those waves for developing an output signal. A film of semi-conductive material between the input and output transducers responds to a unidirectional potential for conducting charge carriers alongside the propagation path at a velocity slightly greater than the acoustic wave velocity to achieve a amplification of the acoustic surface waves. Finally, a unidirectional field is applied transversely through the semi-conductive film to control the density of the charge carriers and the amplification.
    • 在信号放大器中,输入传感器沿着压电衬底上的预定路径以给定速度发射声表面波。 输出传感器响应于这些波形用于开发输出信号。 在输入和输出换能器之间的半导电材料薄膜响应单向电势,用于以稍大于声波速度的速度沿着传播路径传导载流子,以实现声表面波的放大。 最后,横向通过半导体膜施加单向场,以控制电荷载流子的密度和放大。