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1. 发明授权

US10771059B2 High throw-count RF switch 有权
公开(公告)号：US10771059B2
公开(公告)日：2020-09-08
申请号：US16239444
申请日：2019-01-03
申请人： pSemi Corporation
发明人： Eric S. Shapiro , Payman Shanjani
IPC分类号： H03K17/693 , H04B1/04 , H04B1/48 , H03K17/62 , H03K17/76 , H03K17/06
摘要： A high throw-count multiple-pole FET-based RF switch architecture that provides good RF performance in terms of insertion loss, return loss, isolation, linearity, and power handling. A common port RFC is coupled along a common path to multiple ports RFn. Embodiments introduce additional common RF path branch isolation switches which are controlled by state dependent logic. The branch isolation switches help to isolate the unused branch ports RFn and the unused portion of the common path from the active portion of the common path, and thereby reduce the reactive load attributable to such branches that degrades RF performance of the ports RFn “closer” to the common port RFC. The branch isolation switches can also be used to reconfigure the switch architecture for a multiplex function as well as separate switch path banks for re-configurability of purpose, tuning, or varying switch throw counts and packaging options.

2. 发明申请

US20200136609A1 SWITCH CIRCUIT AND HIGH-SPEED MULTIPLEXER-DEMULTIPLEXER 审中-公开
公开(公告)号：US20200136609A1
公开(公告)日：2020-04-30
申请号：US16660136
申请日：2019-10-22
申请人： LONTIUM SEMICONDUCTOR CORPORATION
发明人： Cheng TAO , Hongfeng XIA , Yu CHEN , Xiangyu JI , Jiaxi FU
IPC分类号： H03K17/62 , H03K17/687 , H04J3/04
摘要： A switch circuit and a high-speed multiplexer-demultiplexer are provided. The switch circuit includes an equalization module and an MOS transistor. A gate of the first MOS transistor is connected to an output terminal of the equalization module. An input terminal of the first MOS transistor is connected to a signal source. An output terminal of the first MOS transistor is connected to a subsequent circuit. The equalization module is configured to: supply a turning-on signal to the first MOS transistor in a case that an operation signal is acquired, to turn on the first MOS transistor; and generate a compensation signal for compensating an attenuation of the signal transmitted through the first MOS transistor, and apply the compensation signal to the gate of the first MOS transistor. The switch circuit operates in response to the operation signal.

3. 发明授权

US10469070B1 PAM-4 voltage-mode driver with stabilized output 有权
公开(公告)号：US10469070B1
公开(公告)日：2019-11-05
申请号：US16133456
申请日：2018-09-17
申请人： Marvell International Ltd.
发明人： Peng Liu , Zhendong Guo
IPC分类号： H03K17/16 , H03K7/02 , H03K17/60 , H03K17/10 , H03K19/177 , H03K19/00 , H03K17/693 , H03K17/62
摘要： Linearity of a PAM-4 voltage-mode driver is improved using current compensation. The driver receives a first input data signal having a first logic level and a second input data signal having a second logic level. In an additive current mode, when the first logic level matches the second logic level, the driver uses switch circuitry to form an auxiliary current path through which supplementary current (I_Supplementary) flows from a voltage regulator. In a primary current mode, when the first logic level does not match the second logic level, the driver uses the switch circuitry to break the auxiliary current path, thereby preventing the supplementary current (I_Supplementary) from flowing from the voltage regulator.

4. 发明申请

US20190238172A1 RF SWITCH 审中-公开
公开(公告)号：US20190238172A1
公开(公告)日：2019-08-01
申请号：US16253605
申请日：2019-01-22
申请人： NXP B.V.
发明人： Gian Hoogzaad , Denizhan Karaca
IPC分类号： H04B1/40 , H03F3/21 , H03K17/62 , H03K17/76
CPC分类号： H04B1/40 , H03F3/21 , H03F2200/451 , H03K17/62 , H03K17/76 , H04B1/48
摘要： An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.

5. 发明授权

US10261563B1 Hybrid power switch 有权
公开(公告)号：US10261563B1
公开(公告)日：2019-04-16
申请号：US15839317
申请日：2017-12-12
申请人： Apple Inc.
发明人： Vivekanandan Venugopal , Ajay Kumar Bhatia
IPC分类号： H03K17/16 , G06F1/3206 , G06F17/50 , H03K17/62 , H03K17/22
摘要： A method and apparatus for controlling a power switch are disclosed. A power switch may be coupled between a power supply signal and a virtual power supply signal coupled to a circuit block. The power switch may be configured to couple the power supply signal to the virtual power supply signal based on a first control signal, and reduce a voltage level of the virtual power supply signal to a voltage level less than a voltage level of the power supply signal based on a second control signal. The power switch may be further configured to change a current flowing from the power supply signal to the virtual power supply signal based on a third control signal.

6. 发明授权

US09991889B2 High throw-count RF switch 有权
公开(公告)号：US09991889B2
公开(公告)日：2018-06-05
申请号：US15019882
申请日：2016-02-09
申请人： pSemi Corporation
发明人： Eric S. Shapiro , Payman Shanjani
IPC分类号： H03K17/693 , H03K17/62 , H03K17/76 , H04B1/04 , H04B1/48 , H03K17/06
CPC分类号： H03K17/693 , H03K17/62 , H03K17/76 , H03K2017/066 , H04B1/0458 , H04B1/48 , H04B2001/485
摘要： A high throw-count multiple-pole FET-based RF switch architecture that provides good RF performance in terms of insertion loss, return loss, isolation, linearity, and power handling. A common port RFC is coupled along a common path to multiple ports RFn. Embodiments introduce additional common RF path branch isolation switches which are controlled by state dependent logic. The branch isolation switches help to isolate the unused branch ports RFn and the unused portion of the common path from the active portion of the common path, and thereby reduce the reactive load attributable to such branches that degrades RF performance of the ports RFn “closer” to the common port RFC. The branch isolation switches can also be used to reconfigure the switch architecture for a multiplex function as well as separate switch path banks for re-configurability of purpose, tuning, or varying switch throw counts and packaging options.

7. 发明授权

US09748951B2 Switching circuit 有权
公开(公告)号：US09748951B2
公开(公告)日：2017-08-29
申请号：US15195707
申请日：2016-06-28
申请人： IMEC VZW
发明人： Xiaoqiang Zhang , Mark Ingels
IPC分类号： H04L27/12 , H03K17/687 , H03F1/08 , H03F1/14 , H03F1/32 , H03F3/193 , H03F3/21 , H03F3/217 , H03F3/24 , H03M1/66 , H04L27/20 , H03K17/16 , H03K17/62 , H03M1/08 , H03M1/74
CPC分类号： H03K17/687 , H03F1/086 , H03F1/14 , H03F1/3205 , H03F3/193 , H03F3/211 , H03F3/2171 , H03F3/2178 , H03F3/245 , H03F2200/231 , H03F2200/324 , H03F2200/336 , H03F2200/451 , H03F2200/519 , H03F2200/525 , H03F2200/61 , H03F2200/75 , H03K17/161 , H03K17/164 , H03K17/6292 , H03M1/0863 , H03M1/66 , H03M1/742 , H04L27/20
摘要： A conversion circuit is disclosed. In one aspect, the conversion circuit includes a first input terminal for receiving a digital signal. The conversion circuit includes a second input terminal for receiving a bias voltage signal. The conversion circuit includes an output terminal for outputting a current. The conversion circuit includes a first and a second switch transistor connected to the first input terminal for receiving the digital signal. The conversion circuit includes a first and a second current source transistor connected to the second input terminal for receiving the bias voltage signal. The conversion circuit further includes a first branch, wherein the first switch transistor is connected to the output terminal via the first current source transistor. The conversion circuit further includes a second branch, wherein the second current source transistor is connected to the output terminal via the second switch transistor.

8. 发明授权

US09240295B2 Low EMI keypad circuitry 有权
标题翻译：低EMI键盘电路
公开(公告)号：US09240295B2
公开(公告)日：2016-01-19
申请号：US13233214
申请日：2011-09-15
申请人： Hong Chean Choo , Kien Beng Tan , Gee Heng Loh
发明人： Hong Chean Choo , Kien Beng Tan , Gee Heng Loh
IPC分类号： H03K17/94 , H03M11/00 , H03K17/62 , H01H13/70
CPC分类号： H01H13/70 , H01H2239/004 , H01H2239/01
摘要： Disclosed is keypad circuitry operable to detect a pressed key while reducing electromagnetic interference (EMI). The keypad circuitry is operable to reduce EMI in two ways: a) reducing the voltage swing occurring at the row circuitry and column circuitry of the keypad, and b) reducing the number of signal transitions by restricting the signal transitions to occurring at the column and row corresponding to a pressed key. By limiting signal transitions to occurring only at the row and column corresponding to a pressed key, fewer signal transitions occur, and thus, less EMI is produced. Additionally, reduced voltage swings at the row circuitry and column circuitry results in reduced EMI.
摘要翻译：公开了可操作以在减少电磁干扰（EMI）的同时检测按下的键的键盘电路。键盘电路可操作以两种方式降低EMI：a）降低在键盘的行电路和列电路处发生的电压摆幅，以及b）通过限制信号转变发生在列而减少信号转换的数量，以及行对应于按下的键。通过将信号转换限制在对应于按下的键的行和列上才发生，产生较少的信号转换，从而产生更少的EMI。另外，行电路和列电路的减小的电压摆幅导致EMI降低。

9. 发明申请

US20150200363A1 RESISTIVE SWITCHING ELEMENT AND USE THEREOF 有权
标题翻译：电阻开关元件及其使用
公开(公告)号：US20150200363A1
公开(公告)日：2015-07-16
申请号：US14418859
申请日：2013-07-19
申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
发明人： Davide Sacchetto , Shashi Kanth Bobba , Pierre-Emmanuel Julien Marc Gaillardon , Yusuf Leblebici , Giovanni De Micheli , Tugba Demirci
IPC分类号： H01L45/00 , H03K17/62 , G11C13/00
CPC分类号： G11C13/004 , G11C11/56 , G11C13/0007 , G11C13/0026 , G11C13/0028 , G11C13/0064 , G11C13/0069 , G11C2013/0045 , G11C2013/0073 , G11C2213/56 , G11C2213/72 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H03K17/6257
摘要： A bipolar resistive switching device (RSM device, FIG. 35) comprises an electrically conductive bottom electrode (BE, FIG. 35); a stack of transition metal oxides layers (RSM, FIG. 35), a number of transition metal oxide layers (RSO, FIG. 35) being equal or greater than 2, the stack comprising: at least one MOx layer (RSOA, FIG. 35), at least one oxygen gettering layer NOy (RSOB, FIG. 35). The resistive switching device further comprises an electrically conductive top electrode (TE, FIG. 35).
摘要翻译：双极电阻开关器件（RSM器件，图35）包括导电底电极（BE，图35）; 一组过渡金属氧化物层（RSM，图35），多个过渡金属氧化物层（RSO，图35）等于或大于2，所述堆叠包括：至少一个MOx层（图5A）。 35），至少一个吸氧层NOy（RSOB，图35）。电阻开关器件还包括导电顶电极（TE，图35）。

10. 发明授权

US08937503B2 Switch control circuit, semiconductor device, and radio communication device 有权
标题翻译：开关控制电路，半导体器件和无线电通信设备
公开(公告)号：US08937503B2
公开(公告)日：2015-01-20
申请号：US14086011
申请日：2013-11-21
申请人： Kabushiki Kaisha Toshiba
发明人： Toshiki Seshita
IPC分类号： H03K17/00 , H03K17/10 , H03K17/62 , H03K17/693 , H03K19/0185 , H04B1/48
CPC分类号： H03K17/002 , H03K17/102 , H03K17/6221 , H03K17/693 , H03K19/018521 , H04B1/48
摘要： A switch control circuit has a first terminal, a second terminal, a third terminal, a serial-parallel converter, a selector, a driver circuit and a tri-state buffer. The serial-parallel converter converts a serial switching control signal inputted from the third terminal into first parallel switching control signals when the first terminal is at a first power-supply potential. The selector selects either the first parallel switching control signals converted by the serial-parallel converter or second parallel switching control signals inputted into the second and third terminals, depending on the potential of the first terminal. The driver circuit converts potential levels of the first parallel switching control signals or the second parallel switching control signals selected by the selector and generates parallel switching control signals with potential levels capable of switching a switch circuit.
摘要翻译：开关控制电路具有第一端子，第二端子，第三端子，串并联转换器，选择器，驱动器电路和三态缓冲器。当第一端子处于第一电源电位时，串并联转换器将从第三端子输入的串行开关控制信号转换为第一并联开关控制信号。选择器根据第一终端的电位来选择由串并转换器转换的第一并行切换控制信号或输入到第二和第三终端的第二并行切换控制信号。驱动器电路转换第一并联开关控制信号的电位电平或由选择器选择的第二并联开关控制信号，并产生具有能够切换开关电路的电位电平的并行开关控制信号。

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