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1. 发明申请

WO2009023423A1 INCREASED NANOSECOND LASER PULSE-TO-PULSE ENERGY REPEATABILITY USING ACTIVE LASER PULSE ENERGY CONTROL 审中-公开
标题翻译：增加激光器激光脉冲能量可重复使用激光脉冲能量控制
公开(公告)号：WO2009023423A1
公开(公告)日：2009-02-19
申请号：PCT/US2008/071246
申请日：2008-07-25
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , THOMAS, Timothy N. , JENNINGS, Dean , ADAMS, Bruce E.
发明人： LI, Jiping , HUNTER, Aaron Muir , THOMAS, Timothy N. , JENNINGS, Dean , ADAMS, Bruce E.
IPC分类号： H01S3/10 , H01S3/101
CPC分类号： B23K26/0622 , H01L21/02686 , H01L21/2026
摘要： A method and apparatus for reducing the pulse-to-pulse laser energy variation (i.e., increasing the pulse-to-pulse laser energy repeatability) from a pulsed laser source are provided. In this manner, laser pulses impingent on a processing plane, such as the surface of a wafer or other substrate, may have substantially the same energy content leading to a more controlled process when compared to conventional processing. The method may be based on in-situ detection of the pulse energy level and the subsequent active adjustment of the transmitted laser pulse energy in a closed-loop control scheme. Furthermore, the active adjustment of the laser pulse energy may occur within a few nanoseconds after the original laser pulse is generated by a pulsed laser source.
摘要翻译：提供了一种用于从脉冲激光源减少脉冲对脉冲激光能量变化（即，增加脉冲到脉冲激光能量重复性）的方法和装置。以这种方式，与常规处理相比，照射在诸如晶片或其它基板的表面的处理平面上的激光脉冲可具有基本上相同的能量含量，导致更受控制的过程。该方法可以基于在闭环控制方案中脉冲能量水平的现场检测和随后的发射的激光脉冲能量的主动调节。此外，在通过脉冲激光源产生原始激光脉冲之后，激光脉冲能量的主动调节可能在几纳秒内发生。

2. 发明申请

WO2008143083A1 レーザ処理装置のガス噴射手段审中-公开
标题翻译：气体注入装置用于激光加工装置
公开(公告)号：WO2008143083A1
公开(公告)日：2008-11-27
申请号：PCT/JP2008/058836
申请日：2008-05-14
申请人：株式会社日本製鋼所 , 加藤修 , 澤井美喜
发明人：加藤修 , 澤井美喜
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： B23K26/1464 , H01L21/02675 , H01L21/2026
摘要：レーザ処理装置における被処理体へのレーザ照射部のガス雰囲気を良好に形成する。　被処理体（非晶質半導体薄膜２）にレーザ光６を照射して前記被処理体の処理を行うレーザ処理装置に備えられ、照射雰囲気を形成するガスを前記被処理体の前記レーザ光照射部分近傍に噴射するガス噴射手段であって、該噴射手段は、前記ガスの導入部（ガス供給管１２）と、前記ガスが前記被処理体に向けて噴射されるガス噴射口１５と、前記ガス導入部から前記ガス噴射口に至るガス流路１３を有しており、該ガス流路に、ガスの流れ方向に対面してガス流を乱すことでガスの流れ方向と交差する方向におけるガス流を均す均流面が設けられている。被処理体のレーザ光照射部付近に均等な照射雰囲気を形成でき、レーザ光の照射による処理を均等かつ良質に行うことができる。
摘要翻译：在激光加工装置中优良地形成作为激光照射部并且被施加到待加工物体的气体气氛。激光处理装置通过用激光束（6）照射身体来对被处理体（非晶半导体膜（2））进行处理。激光加工装置设置有将用于形成照射气氛的气体喷射到激光束照射部附近的气体注入装置。注射装置设置有气体的导入部（气体供给管（12））; 气体注入口（15），气体从所述气体注入口朝向被处理体注入; 以及从气体导入部向气体喷射口配置的气体通路（13）。气体通道具有流动均匀化表面，其使得气体流在与气体流动方向相对的方向上与气体的流动方向相交均匀，以扰乱气体流动。因此，可以在待加工体的激光束照射部分附近形成均匀的照射气氛，并且可以进行通过激光束照射的均匀且高质量的处理。

3. 发明申请

WO2007049525A1 LASER IRRADIATION APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：激光雷射装置和半导体器件的制造方法
公开(公告)号：WO2007049525A1
公开(公告)日：2007-05-03
申请号：PCT/JP2006/320986
申请日：2006-10-16
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TANAKA, Koichiro , OISHI, Hirotada
发明人： TANAKA, Koichiro , OISHI, Hirotada
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L27/08 , H01L27/092 , H01L29/786
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0676 , B23K26/0738 , G02B19/0014 , G02B19/0052 , G02B26/101 , G02B27/0961 , G02B27/0966 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S359/90
摘要： A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f = 1/(a + b) + 1/c, when: "a" is a distance between an emission opening of the laser oscillator and the deflecting mirror; "b" is a distance between the deflecting mirror and the transfer lens; "c" is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and "f" is a focal length of the transfer lens.
摘要翻译：将从激光振荡器发射的激光束偏转的偏转镜，转印透镜，将穿过转印透镜的激光束分割为多个激光束的柱面透镜阵列，以及将形成的激光束叠合的聚光透镜包括柱面透镜阵列。满足以下公式：1 / f = 1 /（a + b）+ 1 / c，当：“a”是激光振荡器的发射开口与偏转镜之间的距离; “b”是偏转镜与转印透镜之间的距离; “c”是转印透镜与柱面透镜阵列的入射面之间的距离; “f”是转印透镜的焦距。

4. 发明申请

WO2006073165A1 半導体デバイス、その製造方法および製造装置审中-公开
标题翻译：半导体器件及其制造方法和装置
公开(公告)号：WO2006073165A1
公开(公告)日：2006-07-13
申请号：PCT/JP2006/300053
申请日：2006-01-06
申请人：シャープ株式会社 , 中山純一郎 , 逸見郁未 , 乾哲也
发明人：中山純一郎 , 逸見郁未 , 乾哲也
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： H01L21/0268 , H01L21/2026 , H01L21/84 , H01L29/6675 , H01L29/78672
摘要：　基板（１）上に半導体膜（３）が形成された半導体デバイス（５）であって、該半導体膜（３）は横方向成長結晶を有し、かつ、該横方向成長結晶の端部において表面突起高さが前記半導体膜（３）の膜厚より低いことを特徴とする半導体デバイス（５）、および当該半導体デバイス（５）を製造する方法、製造装置により、ＳＬＳ法においてレーザ照射を繰り返した最後の領域における表面突起高さ（リッジ）を低減させることができる半導体デバイスの製造方法、製造装置およびそれらによって製造された半導体デバイスを提供する。
摘要翻译：在基板（1）上具有半导体膜（3）的半导体器件（5）的特征在于，半导体膜（3）具有横向生长的晶体，并且横向生长的边缘部分处的表面突起的高度晶体小于半导体膜（3）的厚度。一种用于制造半导体器件（5）的方法和装置，通过该方法和装置，可以减少通过SLS方法重复激光照射的最后区域中的表面突起（脊）的高度，并且通过该方法制造半导体器件，提供该装置。

5. 发明申请

WO2005122222A1 LASER IRRADIATION METHOD AND APPARATUS, METHOD FOR ANNEALING NON-SINGLE CRYSTAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：激光辐射方法和装置，用于退火非晶体的方法和制造半导体器件的方法
公开(公告)号：WO2005122222A1
公开(公告)日：2005-12-22
申请号：PCT/JP2005/010729
申请日：2005-06-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TANAKA, Koichiro
发明人： TANAKA, Koichiro
IPC分类号： H01L21/268
CPC分类号： H01L21/02675 , B23K26/066 , B23K26/067 , H01L21/02678 , H01L21/2026 , H01L27/1285
摘要： It is an object of the present invention to provide a laser irradiation technique which can keep the stability of the laser oscillator high and which can perform laser process homogeneously by avoiding the adverse effect due to the return light reflected on an irradiation when, for example, crystallizing with a lens array, and to provide a crystallization method and a method for manufacturing a semiconductor device which use the technique. In the present invention, a laser beam emitted from a laser oscillator is divided into a plurality of beams through a lens array such as a cylindrical lens array, the divided beams pass through opening portions of a slit while being focused at the opening portions and condensed through a condensing lens, and the condensed beam is irradiated to an irradiation surface. Thus, the light reflected on the irradiation object can be blocked by using the slit.
摘要翻译：本发明的一个目的是提供一种激光照射技术，其可以通过避免由于在照射时反射的返回光的不利影响而使激光振荡器的稳定性保持较高并且能够均匀地进行激光处理，用透镜阵列结晶，并提供使用该技术的结晶方法和制造半导体器件的方法。在本发明中，从激光振荡器发射的激光束通过诸如柱面透镜阵列的透镜阵列被分成多个光束，分束通过狭缝的开口部分同时聚焦在开口部分并且冷凝通过聚光透镜将聚光束照射到照射面上。因此，可以通过使用狭缝来阻止在照射物体上反射的光。

6. 发明申请

WO2004017379A3 PROCESS AND SYSTEM FOR PROCESSING A THIN FILM SAMPLE AND THIN FILM STRUCTURE 审中-公开
标题翻译：用于处理薄膜样品和薄膜结构的方法和系统
公开(公告)号：WO2004017379A3
公开(公告)日：2005-12-22
申请号：PCT/US0325946
申请日：2003-08-19
申请人： UNIV COLUMBIA , IM JAMES S
发明人： IM JAMES S
IPC分类号： C30B35/00 , H01L21/20 , H01L21/336 , H01L21/428 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00
CPC分类号： H01L27/1285 , H01L21/2026 , H01L27/1296 , H01L29/66757 , H01L29/78675 , Y10T117/1024 , Y10T117/1076
摘要： A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. With this beam pulse, at least one portion of the film sample is irradiated with sufficient intensity to fully melt such section of the sample throughout its thickness, and the beam pulse having a predetermined shape. This portion of the film sample is allowed to resolidify, and the re-solidified at least one portion is composed of a first area and a second area. Upon the re-solidification thereof, the first area includes large grains, and the second area has a region formed through nucleation. The first area surrounds the second area and has a grain structure which is different from a grain structure of the second area. The second area is configured to facilitate thereon an active region of an electronic device.
摘要翻译：提供了用于处理薄膜样品（例如半导体薄膜）的工艺和系统以及薄膜结构。特别地，可以控制光束发生器发射至少一个光束脉冲。利用该光束脉冲，以足够的强度照射膜样品的至少一部分，以在样品的整个厚度上完全熔化这样的部分，并且具有预定形状的束脉冲。允许该薄膜样品的该部分重新固化，并且再固化的至少一部分由第一区域和第二区域组成。在其再凝固时，第一区域包括大颗粒，第二区域具有通过成核形成的区域。第一区域围绕第二区域并且具有与第二区域的颗粒结构不同的颗粒结构。第二区域被配置为便于其上电子设备的有源区域。

7. 发明申请

WO2005029543A3 LASER-IRRADIATED THIN FILMS HAVING VARIABLE THICKNESS 审中-公开
标题翻译：具有可变厚度的激光雷射薄膜
公开(公告)号：WO2005029543A3
公开(公告)日：2005-11-10
申请号：PCT/US2004029928
申请日：2004-09-15
申请人： UNIV COLUMBIA , IM JAMES
发明人： IM JAMES
IPC分类号： H01L21/20 , H01L21/268 , H01L21/00 , H01L21/36 , H01L21/84
CPC分类号： C30B1/00 , H01L21/2026 , H01L21/268 , H01L21/84 , H01L29/04
摘要： A crystalline film includes a first crystalline region having first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.
摘要翻译：结晶膜包括具有第一膜厚度和第一晶粒结构的第一晶体区域; 以及具有第二膜厚度和第二晶粒结构的第二晶体区域。第一膜厚度大于第二膜厚度，并且选择第一和第二膜厚度以提供具有装置部件所需的结晶度和取向的结晶区域。

8. 发明申请

WO2005043696A2 LASER THERMAL ANNEALING OF LIGHTLY DOPED SILICON SUBSTRATES 审中-公开
标题翻译：激光热退火对轻掺杂硅衬底的影响
公开(公告)号：WO2005043696A2
公开(公告)日：2005-05-12
申请号：PCT/US2004031783
申请日：2004-09-28
申请人： ULTRATECH INC
发明人： TALWAR SOMIT , THOMPSON MICHAEL O , GREK BORIS , MARKLE DAVID A
IPC分类号： B23K26/06 , B23K26/42 , H01L21/20 , H01L21/268 , H01S
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/60 , H01L21/2026 , H01L21/268
摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.
摘要翻译：使用在室温下基本上不被吸收在衬底中的退火辐射束来执行衬底的激光热退火（LTA）的设备和方法。该方法利用了这样的事实，即在一些衬底（例如未掺杂的硅衬底）中吸收长波长辐射（1微米或更大）是温度的强函数。该方法包括将衬底加热到其中吸收长波长退火辐射的临界温度，然后用退火辐射照射衬底以产生能够退火衬底的温度。

9. 发明申请

WO2005029138A2 SYSTEMS AND METHODS FOR INDUCING CRYSTALLIZATION OF THIN FILMS USING MULTIPLE OPTICAL PATHS 审中-公开
标题翻译：使用多个光学PATHS诱导薄膜的结晶的系统和方法
公开(公告)号：WO2005029138A2
公开(公告)日：2005-03-31
申请号：PCT/US2004/030357
申请日：2004-09-15
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OFNEW YORK , IM, James
发明人： IM, James
IPC分类号： G02B
CPC分类号： H01L21/02686 , C30B1/04 , G03F7/70041 , G03F7/70725 , H01L21/02595 , H01L21/0268 , H01L21/02683 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. Exemplary methods include the steps of generating a plurality of laser beam pulses having energy beam characteristics, directing a generated laser beam pulse onto a first optical path, modulating the energy beam characteristics of the first optical path-directed laser beam pulse, irradiating at least a portion of a first region of the thin film with the first optical pathdirected laser beam pulse to induce crystallization of the portion of the first region, directing a generated laser beam pulse onto a second optical path, modulating the energy beam characteristics of the second optical path-directed laser beam pulse, wherein the energy beam characteristics of the second optical path-directed laser beam pulse is different from the energy beam characteristics of the first optical path-directed laser beam pulse, and irradiating at least a portion of a second region of the thin film with the second optical path-directed laser beam pulse to induce crystallization of the portion of the second region. An exemplary system includes a first optical path, a second optical path, a beam steering element for directing laser beam pulses onto the first optical path and the second optical path; and a handling stage for controlling the position of a thin film relative to the laser beam pulses being directed via the first and second optical paths.
摘要翻译：本发明涉及用于通过具有不同能量束特性的激光束脉冲照射薄膜样品的区域的系统和方法，其通过不同的光路产生和传送。示例性方法包括以下步骤：产生具有能量束特性的多个激光束脉冲，将产生的激光束脉冲引导到第一光路上，调制第一光路定向激光束脉冲的能量束特性，至少照射所述薄膜的第一区域的所述第一区域具有所述第一光程定向激光束脉冲，以引起所述第一区域的所述部分的结晶，将所产生的激光束脉冲引导到第二光路上，调制所述第二光路的能量束特性定向激光束脉冲，其中所述第二光路定向激光束脉冲的能量束特性与所述第一光程指向激光束脉冲的能量束特性不同，并且照射所述第二光路定向激光束脉冲的第二区域的至少一部分该薄膜具有第二光程定向激光束脉冲，以诱导该部分的结晶化 nd区域。示例性系统包括第一光路，第二光路，用于将激光束脉冲引导到第一光路和第二光路上的光束操纵元件; 以及用于控制薄膜相对于经由第一和第二光路引导的激光束脉冲的位置的处理阶段。

10. 发明申请

WO2004075263A2 SYSTEM AND PROCESS FOR PROCESSING A PLURALITY OF SEMICONDUCTOR THIN FILMS WHICH ARE CRYSTALLIZED USING SEQUENTIAL LATERAL SOLIDIFICATION TECHNIQUES 审中-公开
标题翻译：使用顺序的固定化技术处理结晶的半导体薄膜的多孔体系和方法
公开(公告)号：WO2004075263A2
公开(公告)日：2004-09-02
申请号：PCT/US2004004929
申请日：2004-02-18
申请人： UNIV COLUMBIA , IM JAMES S
发明人： IM JAMES S
IPC分类号： B23K26/067 , B23K26/12 , H01L21/20 , H01L
CPC分类号： B23K26/0673 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/067 , B23K26/12 , B23K26/127 , B23K26/128 , H01L21/2026 , Y10S117/904 , Y10T428/24802
摘要： A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification ("SLS") technique and/or a first uniform small grained material ("UGS") techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.
摘要翻译：提供了一种用于处理多个半导体薄膜样品中的每一个的至少一个部分的工艺和系统。在这些处理和系统中，照射束源被控制以以预定的重复频率发射连续的照射束脉冲。使用这种发射的光束脉冲，使用第一顺序侧向固化（“SLS”）技术和/或第一均匀小粒度材料（“UGS”）技术照射半导体膜样品之一的至少一个部分，以处理这样的部分）。在完成第一采样的这一部分的处理之后，光束脉冲被重定向以冲击半导体薄膜样品的第二样品的至少一个部分。然后，使用第二SLS技术和/或第二UGS技术照射第二样品的重定向光束脉冲，这样的部分）以处理第二样品的至少一个部分。第一和第二技术可以彼此不同或基本上相同。

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