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    • 53. 发明授权
    • Minimization of microelectronic interconnect thickness variations
    • 微电子互连厚度变化的最小化
    • US06883153B2
    • 2005-04-19
    • US10340534
    • 2003-01-10
    • Lei JiangSadasivan Shankar
    • Lei JiangSadasivan Shankar
    • G06F17/10G06F17/50G06F19/00H01L21/768
    • B24B37/042H01L21/7684
    • An efficient TCAD tool to analyze the variation of topography and thickness of interconnects and components of integrated circuits introduced by multiple-layer chemical-mechanical planarization (CMP). Contact stress distribution is determined on all scales as a function of topography. A formulation is used relating the pad deformation and therefore stress directly to pattern topography ({d}), and the pad mechanical properties. The 3-dimensional stress and deformation field is described, along with representation of the statistical pad roughness and slurry thickness information. These process conditions are also functions of the surface topography and contact regimes. The stress-topography relationship is represented as [A]{P}={d}, where [A] is the influence coefficient matrix determined by the contact mechanics, and {P} and {d} represent local stress and topography on patterns. With given initial topography and slurry rate kinetics, the surface evolution at each time step of CMP can be traced iteratively to obtain post-CMP topography.
    • 一种有效的TCAD工具,用于分析由多层化学机械平面化(CMP)引入的集成电路的互连和部件的形貌和厚度的变化。 接触应力分布在所有尺度上作为地形的函数确定。 使用一种配方来将焊盘变形和因此的应力直接与图案形貌({d})和焊盘的机械性能有关。 描述了三维应力和变形场,以及统计垫粗糙度和浆料厚度信息的表示。 这些工艺条件也是表面形貌和接触方式的功能。 应力 - 形貌关系表示为[A] {P} = {d},其中[A]是由接触力学确定的影响系数矩阵,{P}和{d}表示模式上的局部应力和形貌。 随着给定的初始形貌和浆料速率动力学,CMP的每个时间步长的表面演化可以迭代地追溯到获得CMP后的形貌。