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序号	专利名	申请号	申请日	公开（公告）号	公开（公告）日	发明人
1	增强EEPROM持久性的方法和装置	CN200910106539.4	2009-04-07	CN101859603B	2012-10-24	邓锦辉; 刘阳; 胡小波; 施爱群
本发明涉及一种增强EEPROM持久性的方法和装置。所述方法包括对于采用浮栅隧道氧化物结构的EEPROM，在其擦除或写入期间采用可控高压信号将栅氧化层的电场强度控制在10MV/cm～15MV/cm之间。所述装置包括：时钟产生驱动电路，用于生成时钟驱动信号；电荷泵，用于根据所述时钟驱动信号产生可控高压信号；其中所述可控高压信号用于在采用浮栅隧道氧化物结构的EEPROM的擦除或写入期间将其栅氧化层的电场强度控制在10MV/cm～15MV/cm之间。实施本发明的增强EEPROM的持久性的方法的装置，通过将栅氧化层上的电场强度控制在一个合理的范围内，降低其峰值，从而有效地增强了其持久性，并且通过采用不同的可控高压信号上升速度，还能缩短写入和擦除时间。
2	提供快速编程及读操作的非易失性存储设备、系统和方法	CN200810188792.4	2008-08-18	CN101436434B	2012-09-19	曹成奎; 任容兑
揭示了一种用于非易失性存储系统的编程和读方法，包括确定以快速和正常模式之一编程第一数据；在快速模式中，将由多位ECC引擎产生的错误代码提供给第一数据，并且产生第二数据；通过具有比第一开始电平高的第二开始电平的编程电压在单元阵列中编程该第二数据；以及从该单元阵列阵列中读该第二数据，该第二数据在由多位ECC引擎从该第二数据中检测和纠正一个错误处理后被输出。
3	增强EEPROM持久性的方法和装置	CN200910106539.4	2009-04-07	CN101859603A	2010-10-13	邓锦辉; 刘阳; 胡小波; 施爱群
本发明涉及一种增强EEPROM持久性的方法和装置。所述方法包括对于采用浮栅隧道氧化物结构的EEPROM，在其擦除或写入期间采用可控高压信号将栅氧化层的电场强度控制在10MV/cm～15MV/cm之间。所述装置包括：时钟产生驱动电路，用于生成时钟驱动信号；电荷泵，用于根据所述时钟驱动信号产生可控高压信号；其中所述可控高压信号用于在采用浮栅隧道氧化物结构的EEPROM的擦除或写入期间将其栅氧化层的电场强度控制在10MV/cm～15MV/cm之间。实施本发明的增强EEPROM的持久性的方法的装置，通过将栅氧化层上的电场强度控制在一个合理的范围内，降低其峰值，从而有效地增强了其持久性，并且通过采用不同的可控高压信号上升速度，还能缩短写入和擦除时间。
4	提供快速编程及读操作的非易失性存储设备、系统和方法	CN200810188792.4	2008-08-18	CN101436434A	2009-05-20	曹成奎; 任容兑
揭示了一种用于非易失性存储系统的编程和读方法，包括确定以快速和正常模式之一编程第一数据；在快速模式中，将由多位ECC引擎产生的错误代码提供给第一数据，并且产生第二数据；通过具有比第一开始电平高的第二开始电平的编程电压在单元阵列中编程该第二数据；以及从该单元阵列中读该第二数据，该第二数据在由多位ECC引擎从该第二数据中检测和纠正一个错误处理后被输出。
5		JP7922365	1965-12-21	JPS4822288B1	1973-07-05

6		JP1320967	1967-03-03	JPS444736B1	1968-02-26

7		JP6917968	1968-09-26	JPS4813251B1	1973-04-26

8	Write station for a magnetic storage medium	US3670312D	1970-10-30	US3670312A	1972-06-13	BROADBENT BERNE D
A magnetic shift register including a fine magnetic wire recording medium, the wire being wound under tension in a helix around a substrate including a cylindrically disposed polyphase advance array which includes a plurality of drive windings oriented transverse to the axis of the magnetic wire so that a series of spaced magnetic domains, sequentially formed at the input end segment of the magnetic wire by a drive field produced by one of the drive winding, can be propagated through the length of the magnetic wire by the polyphase advance array when current pulses are applied to the drive windings. A write winding fastened adjacent the magnetic wire toward the input end thereof can selectively impede propagation of and cause destruction of the magnetic domain in selected storage segments. A read winding disposed toward the output end of the magnetic wire senses magnetic domains propagated therethrough past the write winding such that the absence of a magnetic domain from a spaced storage segment of the magnetic wire represents a digital ZERO and the presence of a magnetic domain represents a digital ONE.
9	High density shift register storage medium	US3568172D	1968-12-23	US3568172A	1971-03-02	LESHER TOMMY G
A magnetic shift register including a fine drawn wire magnetic recording medium of cobalt, iron and vanadium which can be annealed, the wire being wound under tension in a helix around a cylindrically disposed polyphase advancing array which includes a plurality of advancing windings oriented transverse to the wire so that a magnetic domain recorded on a segment of the wire can be propagated through the length of the wire by the polyphase advancing array when current pulses are applied to the windings. A read winding is disposed around the wire toward one end thereof so that the propagated magnetic domain induces an output signal in it as it is propagated therethrough.
10	Magnetic domain shift register meter reader	US3503044D	1966-12-06	US3503044A	1970-03-24	BONYHARD PETER I; SEIDEL HAROLD; SHAPIRO HERBERT M

11	Information transfer between magnetizable wires	US3487382D	1966-02-07	US3487382A	1969-12-30	CHOW WOO F

12	Magnetic domain propagation device	US3453606D	1965-08-31	US3453606A	1969-07-01	HAAG ARTHUR V; KAENEL REGINALD A

13	Electrical information handling circuit	US24061762	1962-11-28	US3142045A	1964-07-21	BOBECK ANDREW H

14		DE1964952	1969-12-24	DE1964952B2	1977-11-17

15	MAGNETIC SHIFT REGISTERS	GB1315694D	1970-07-17	GB1315694A	1973-05-02
1315694 Magnetic domain shift register FILMFABRIK WOLFEN VEB 17 July 1970 34776/70 Heading G4C [Also in Division H3] In a shift register, bits are propagated along soft magnetic strips 3, Fig. 1, in which local variations of the critical switching field are produced by a pattern of permanently magnetized areas in a hard magnetic layer 2. The magnetic materials are insulated from one another by an elastic layer 4, and the structure is supported by an elastic substrate 1. A pulsed current is used to shift the bits, and may be passed through the strips 3 or the layers 2. The strips 3 may be overlaid with an electrically conductive layer, Fig. 2 (not shown). The permanent magnetic layer may be one or more thin metal layers and/or permanent magnetic particles embedded in a non-magnetic carrier. The shift register may be in the form of a continuously revolving endless tape.
16		SU1625888	1971-03-01	SU373776A1	1973-03-12

17	A BINARY CODED MAGNETIC INFORMATION STORE	GB6205369	1969-12-19	GB1279718A	1972-06-28
1279718 Magnetic storage arrangements COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE 19 Dec 1969 [30 Dec 1968] 62053/69 Heading H3B In a moving domain shift register, Fig. 1A, parallel propagation channels 3, 4 extend over a substrate, and are overlaid by a pair of zig-zag conductors 1, 2 which cross one another at 90 degrees and which cross the channels at 45 degrees. These conductors are pulsed to move domains along the channels, and the channels may be bridged as at 5, Fig. 1A, and Fig. 2 (not shown), to form closed loops or a long propagation path. Conventional conductors loops (not shown) are used to generate and detect the domains. Three channel structures are shown in Fig. 3, the left hand view showing a film of magnetic material 10 on a glass substrate 13, an apertured aluminium film 11 defining the channel shape, and insulating material 14, 15 separating the conductors 1, 2. In the central view of Fig. 3, the channel is formed of magnetically hard and soft films 10, 21 respectively, separated along the line of the channel by insulating material 12. In the right hand view of Fig. 3, the magnetic material 3 is deposited directly on to the substrate. The deposition of the films is accompanied by a magnetic field so that the films are magnetically anisotropic.
18	High density magnetic storage medium of - tensioned fe-co-wire	FR7031319	1970-08-27	FR2101135A1	1972-03-31
The wire contains by weight 2-5% V, 38-39% Co and balance Fe and has been cold reduced to more than 95% of the cross sectional area. Wire diameter may be 0.003", Co, FE ratio 2:3 and is wound under tension in helix around domain advancing windings orientated transverse to the wire. The recorded domains are propagated through the wire to a read winding.
19		DE1512633	1967-01-24	DE1512633B2	1971-07-22
1,181,091. Magnetic storage devices; exchange systems. WESTERN ELECTRIC CO. Inc. 21 Feb., 1967 [4 March, 1966], No. 8177/67. Headings H3B and H4K. Multifrequency input information from a subscriber is converted into dial pulses by changing each digit of the input, in turn, into a one-out-of-ten code, this code being entered into a write portion 12 of a magnetic domain wall device by reversing the magnetic direction of two adjacent reference positions and by reversing at the same time a third position spaced from the reference positions in accordance with the value of the input digit. Each digit when recorded is moved along the wire into a buffer portion 13, and when a " digit accept " signal is received, the digit is transferred to a read-out portion 14, transfer of a digit from the buffer to the read-out portion taking precedence over transfer from the write to the buffer portion. The domain wall device may comprise a magnetic wire 11 with reference positions established in the write portion 12 by energizing coils CR, the magnetized reference positions transferred to the buffer and read portions 13, 14 being located by coils 30, 31 and 62, 63 respectively. The digit wires C1 . . . C7 . . . C0 from a multifrequency to one-out-of-ten translator T are connected to respective coils (not shown) spaced along the write portion of the wire. The reversed magnetization positions are stepped from the write to the buffer portion by energization of two parallel groups of coils 16 from a 4-phase write pulser 18, and are stepped from the buffer to the read portion by 4-phase energization of similar coils 53 from a read pulser 51. The write pulser 18 becomes operative, as soon as a digit is recorded, through a differentiator 21, a set bi-stable circuit 22, a short duration delay A and a set bi-stable circuit 25, the AND gate 23 in the path being open when a bi-stable circuit 45 is in the reset state and a positive clock pulse is obtained from a source 43. When the reference positions of a recorded digit are detected in the buffer portion by coils 30, 31, bi-stable circuits 22 and 25 are reset and digit movement along the wire ceases. Reading is started by applying a " digit accept" pulse to terminal 40 which sets bi-stable circuit 41, and so enables bi-stable circuit 45 to set over an AND gate 42 when a negative clock pulse is received from source 43. Read pulser 51 is then operative and moves the digit stored from the buffer portion into the read portion. A bi-stable circuit 60 is set when the digit reference positions are detected in the read portion by coils 62, 63, and the clock pulses from source 43 are enabled to pass to the output through AND gate 66. The clock output pulses constitute the dial pulses required and are in time with the stepping movement of the recorded digit along the wire 11. When the third reversed magnetization position, representing the digit value, is detected by a coil 61, the bi-stable circuit 60 is reset and the dial pulse output terminates. Consequent upon each output pulse, bi-stable circuit 45 is temporarily reset over OR gate 70, until the next clock pulse is received so as to permit a further digit to advance from the write to the buffer portion. Resetting of bi-stable circuit 60 causes bi-stable circuit 41 to be reset over a differentiator 72 and OR gate 77. A monopulser M is provided for transmitting a resetting pulse to bi-stable circuit 45, so permitting digit writing if a " digit accept " signal is received when the domain wire is clear of information. An interdigit spacing circuit 74 is operative until disabled by a pulse from differentiator 72.
20		DE1912952	1969-03-14	DE1912952A1	1970-09-17	ECKART JOACHIM; SIEGFRIED SCHAEFER DIPL-ING; KALLENBERGER VOLKER; SIGFRIED SCHWEIZERHOF DR-ING

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