基本信息:
- 专利标题： 晶圆缺陷密度获得方法、测试方法及半导体装置形成方法
- 专利标题（英）：Wafer defect density acquisition method, testing method and semiconductor device forming method
- 申请号：CN201410007099.8 申请日：2014-01-07
- 公开(公告)号：CN104766808A 公开(公告)日：2015-07-08
- 发明人： 陈亚威
- 申请人： 无锡华润上华半导体有限公司
- 申请人地址： 江苏省无锡市国家高新技术产业开发区新洲路8号
- 专利权人： 无锡华润上华半导体有限公司
- 当前专利权人： 无锡华润上华科技有限公司
- 当前专利权人地址： 江苏省无锡市国家高新技术产业开发区新洲路8号
- 代理机构： 无锡互维知识产权代理有限公司
- 代理人： 庞聪雅
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
The invention provides a wafer defect density acquisition method, a testing method and a semiconductor device forming method. A fatal defect rate of each conductive layer of each chip on a wafer is acquired, a fatal defect rate coefficient is acquired according to the fatal defect rate of each conductive layer of each chip, the fatal defect rate coefficient and a theoretical defect density calculation model are combined to acquire a defect density correction calculation formula, and the defect density correction calculation formula is then used for acquiring the wafer defect density. Defect density assessment modes are corrected through combining information of different kinds of chips to enhance assessment accuracy, and thus, the yield of qualified products is increased, and profits are improved.
公开/授权文献:
- CN104766808B 晶圆缺陷密度获得方法、测试方法及半导体装置形成方法 公开/授权日：2017-04-26
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/66 | .在制造或处理过程中的测试或测量 |