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91. 发明授权

US06455394B1 Method for trench isolation by selective deposition of low temperature oxide films 失效
标题翻译：通过选择性沉积低温氧化膜进行沟槽隔离的方法
公开(公告)号：US06455394B1
公开(公告)日：2002-09-24
申请号：US09041984
申请日：1998-03-13
申请人： Ravi Iyer , Gurtej Sandhu , Pai Pan
发明人： Ravi Iyer , Gurtej Sandhu , Pai Pan
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： A method of forming isolation regions in a silicon substrate comprising the steps of forming a trench in the silicon substrate, filling the trench with a silanol polymer material then heating the silanol polymer material so that silicon dioxide is formed in the trench and thereby forms the isolation region. In the preferred embodiment, the silicon substrate is covered by a masking stack which is then etched to expose the underlying silicon substrate. The silicon substrate is then etched to form the trench and the silanol polymer material is deposited in the trench and fills the trench from the bottom up thereby avoiding divots and other defects. The silanol polymer grows faster on the silicon substrate than it does on the nitride. After the silanol polymer is reacted to form the silicon dioxide, CMP polishing is then used to remove the remaining masking stack and silicon dioxide above the surface of the silicon substrate.
摘要翻译：一种在硅衬底中形成隔离区的方法，包括以下步骤：在硅衬底中形成沟槽，用硅烷醇聚合物材料填充沟槽，然后加热硅烷醇聚合物材料，使得在沟槽中形成二氧化硅，从而形成隔离地区。在优选实施例中，硅衬底由掩模叠层覆盖，该掩模叠层然后被蚀刻以暴露下面的硅衬底。然后蚀刻硅衬底以形成沟槽，并且硅烷醇聚合物材料沉积在沟槽中并从底部向上填充沟槽，从而避免纹理和其它缺陷。在硅衬底上，硅烷醇聚合物比在氮化物上生长得更快。在硅烷醇聚合物反应形成二氧化硅之后，然后使用CMP研磨去除硅衬底表面上剩余的掩模叠层和二氧化硅。

92. 发明授权

US06410984B1 Conductive structure in an integrated circuit 失效
公开(公告)号：US06410984B1
公开(公告)日：2002-06-25
申请号：US09436338
申请日：1999-11-08
申请人： Jigish D. Trivedi , Ravi Iyer
发明人： Jigish D. Trivedi , Ravi Iyer
IPC分类号： H01L2348
CPC分类号： H01L21/76865 , H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53257 , H01L29/456 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a local interconnect structure is provided. A first barrier layer comprising sputtered titanium nitride is formed over a topographical structure situated upon a field oxide region within a semiconductor substrate. A hard mask layer comprising tungsten silicide is formed over the first barrier layer. A photoresist layer is then formed over the hard mask layer. The hard mask layer is selectively removed from above an adjacent gate stack on the semiconductor substrate using an etch that is selective to the first barrier layer. The first barrier layer is selectively removed using an etch that is selective to the hard mask layer. A silica layer is formed over the hard mask layer. A recess is formed in the silica layer that is aligned with an active area within the semiconductor substrate. The recess is filled with an electrically conductive material. A second method of forming a local interconnect structure is provided comprising forming a first barrier layer comprising sputter titanium nitride over a semiconductor substrate having a topographical structure situated upon a field oxide region within the semiconductor substrate. A first electrically conductive layer comprising tungsten is then formed over the first barrier layer using chemical vapor deposition. The first electrically conductive layer provides good step coverage over the topographical structure. A second barrier layer comprising sputtered titanium nitride is formed over the first electrically conductive layer. A hard mask layer comprising polysilicon or silica is then formed over the second barrier laster. The hard mask is selectively removed from above an adjacent gate stack on the semiconductor substrate with an etch that is selective to the second barrier layer. The second barrier layer, the first conductive layer, and the first barrier layer are selectively removed, thereby exposing the underlying gate stack on the semiconductor substrate using a chemical etch selective to the hard mask layer. A silica layer is then formed with a recess therein that is filled with an electrically conductive material to form an active area contact through the local interconnect structure.

93. 发明授权

US06372669B1 Method of depositing silicon oxides 有权
公开(公告)号：US06372669B1
公开(公告)日：2002-04-16
申请号：US09410234
申请日：1999-09-30
申请人： Gurtej S. Sandhu , Ravi Iyer
发明人： Gurtej S. Sandhu , Ravi Iyer
IPC分类号： H01L2131
摘要： The invention comprises methods of depositing silicon oxide material onto a substrate. In but one aspect of the invention, a method of depositing a silicon oxide containing layer on a substrate includes initially forming a layer comprising liquid silicon oxide precursor onto a substrate. After forming the layer, the layer is doped and transformed into a solid doped silicon oxide containing layer on the substrate. In a preferred implementation, the doping is by gas phase doping and the liquid precursor comprises Si(OH)4. In the preferred implementation, the transformation occurs by raising the temperature of the deposited liquid precursor to a first elevated temperature and polymerizing the deposited liquid precursor on the substrate. The temperature is continued to be raised to a second elevated temperature higher than the first elevated temperature and a solid doped silicon oxide containing layer is formed on the substrate.

94. 发明授权

US06174590B1 Isolation using an antireflective coating 有权
标题翻译：使用抗反射涂层进行隔离
公开(公告)号：US06174590B1
公开(公告)日：2001-01-16
申请号：US09179722
申请日：1998-10-14
申请人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
发明人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
IPC分类号： B32B1500
CPC分类号： G03F7/091 , G03F7/092 , H01L21/0276 , H01L21/32 , H01L21/76202 , Y10T428/24471 , Y10T428/24917
摘要： An oxidation diffusion barrier stack includes an inorganic antireflective material layer formed on a semiconductor substrate assembly and an oxidation diffusion barrier layer formed on the inorganic antireflective material layer. Further, another oxidation diffusion barrier stack may include a pad oxide layer formed on a semiconductor substrate, an oxidation diffusion barrier layer, and an inorganic antireflective material layered between the pad oxide and the oxidation diffusion barrier layer. Yet further another oxidation diffusion barrier stack may include a first oxidation diffusion barrier layer, a second oxidation diffusion barrier layer, and an inorganic antireflective material layered between the first and second oxidation diffusion barrier layers. The inorganic antireflective material may be selected from the group of silicon-rich silicon oxide, silicon-rich silicon nitride, and silicon-rich silicon oxynitride; and/or oxidation diffusion barrier layers may be silicon nitride layers or silicon oxynitride layers.
摘要翻译：氧化扩散阻挡层包括形成在半导体衬底组件上的无机抗反射材料层和形成在无机抗反射材料层上的氧化扩散阻挡层。此外，另一种氧化扩散阻挡层可以包括形成在半导体衬底上的衬垫氧化物层，氧化扩散阻挡层和层叠在衬垫氧化物和氧化扩散阻挡层之间的无机抗反射材料。又一种氧化扩散阻挡层可以包括层叠在第一和第二氧化扩散阻挡层之间的第一氧化扩散阻挡层，第二氧化扩散阻挡层和无机抗反射材料。无机抗反射材料可以选自富硅氧化硅，富硅氮化硅和富硅氧氮化硅的组; 和/或氧化扩散阻挡层可以是氮化硅层或氮氧化硅层。

95. 发明授权

US6039851A Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines 失效
标题翻译：二氧化硅的反应性溅射刻面以增强金属线之间的间隙的间隙填充
公开(公告)号：US6039851A
公开(公告)日：2000-03-21
申请号：US6729
申请日：1998-01-14
申请人： Ravi Iyer
发明人： Ravi Iyer
IPC分类号： H01L21/314 , H01L21/316 , H01L21/768 , C23C14/34 , H01L21/465
CPC分类号： H01L21/02164 , H01L21/02266 , H01L21/31116 , H01L21/31612 , H01L21/76834 , H01L21/76837
摘要： An embodiment of the present invention teaches a semiconductor device fabrication process for reducing bread-loafing of an insulative layer at the gaps between a plurality of patterned conductive lines, by sputter faceting an existing SiO.sub.2 layer overlying the patterned conductive lines by flowing in argon gas at a rate of approximately 50 sccm, with a reactive CF.sub.4 gas having a flow rate range of approximately 1-4 sccm, into a chamber having a chamber pressure set at approximately 30 mTorr that is equipped with a magnetic field set at approximately 60 Gauss.
摘要翻译：本发明的一个实施例教导了一种半导体器件制造工艺，用于通过在氩气中流动而在图案化的导电线上溅射现有的SiO 2层，从而在多个图案化导电线之间的间隙处减小绝缘层的面包扩散大约50sccm的速率，具有大约1-4sccm的流量范围的反应性CF 4气体进入具有设定在大约30mTorr的腔室压力的室，其具有设置在大约60高斯的磁场。

96. 发明授权

US05997639A Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds 失效
标题翻译：通过化学气相沉积生产的涉及有机金属前体化合物的碳减少碳的方法
公开(公告)号：US05997639A
公开(公告)日：1999-12-07
申请号：US107880
申请日：1998-06-30
申请人： Ravi Iyer
发明人： Ravi Iyer
IPC分类号： C23C16/18 , C23C16/34 , C23C16/452 , C30B25/10 , C30B25/02
CPC分类号： C30B25/105 , C23C16/18 , C23C16/34 , C23C16/452 , C30B29/02
摘要： A semiconductor processing method of depositing a film on a substrate using an organometallic precursor, where the precursor comprises a coordination complex having a central linking atom and at least two ligands bonded thereto, at least one of the ligands including an organic species comprising a carbon atom having at least one hydrogen atom bonded thereto thereby defining a carbon-hydrogen bond of the species, includes, a) passing a feed material through a plasma generating location effective to induce the feed material into a plasma state; b) flowing the feed material from the plasma generating location, the feed material flowing from the plasma generating location comprising a gas in an activated metastable state; c) combining an organometallic precursor with the gas when the gas is in the activated metastable state to separate the organic species from the organometallic precursor coordination complex while leaving the carbon-hydrogen bond intact, the organometallic precursor being in a gaseous non-plasma state when combined with the activated metastable state gas; and d) passing the combined precursor and gas to a substrate under conditions effective to deposit a film on the substrate, the film comprising the central linking atom.
摘要翻译：一种使用有机金属前体在衬底上沉积膜的半导体加工方法，其中前体包含具有中心连接原子和至少两个与其结合的配体的配位络合物，至少一种配体包括含有碳原子的有机物质具有至少一个与其结合的氢原子，从而限定该物质的碳 - 氢键，包括：a）使进料通过等离子体产生位置，以有效地将进料转化为等离子体状态; b）使来自等离子体产生位置的进给材料流动，所述进料从等离子体产生位置流动，其包括处于活化亚稳态的气体; c）当气体处于活化的亚稳态时，将有机金属前体与气体结合，以将有机物质与有机金属前体配位络合物分离，同时保持完整的碳 - 氢键，有机金属前体处于气态非等离子体状态，当结合活化的亚稳态气体; 以及d）在有效沉积薄膜在基底上的条件下将组合的前体和气体传送到基底，该薄膜包含中心连接原子。

97. 发明授权

US5946594A Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 失效
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US5946594A
公开(公告)日：1999-08-31
申请号：US581765
申请日：1996-01-02
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L21/285 , H01L21/4763
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH.sub.3 --) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits on a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500.degree. C.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的新工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。用于改进方法的反应气体是四氯化钛和烃气体，其中该方法的优选实施方案是甲烷。该反应在由大于10KHz的射频源产生的等离子体环境中进行。获得钛金属作为反应产物而不是碳化钛的关键是将等离子体维持电功率设置在仅从烃气体的每个分子除去一个氢原子的范围内。在该方法的优选实施方案中，由甲烷气体形成高反应性甲基（CH 3 - ）。这些自由基攻击四氯化碳分子的钛 - 氯键，并形成氯甲烷，其形成时从室中排出。钛金属沉积在已被加热到200-500℃的优选范围内的晶片或其它基底上。

98. 发明授权

US5933760A Method and apparatus for reducing fixed charge in semiconductor device layers 失效
公开(公告)号：US5933760A
公开(公告)日：1999-08-03
申请号：US972288
申请日：1997-11-18
申请人： Ravi Iyer , Randhir P. S. Thakur , Howard E. Rhodes
发明人： Ravi Iyer , Randhir P. S. Thakur , Howard E. Rhodes
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： H01L21/02164 , H01L21/02129 , H01L21/02271 , H01L21/31612 , H01L21/31625
摘要： The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O.sub.3. When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced, resulting in a higher threshold voltage for field transistor devices.

99. 发明授权

US5629246A Method for forming fluorine-doped glass having low concentrations of free fluorine 失效
标题翻译：形成低浓度游离氟的氟掺杂玻璃的方法
公开(公告)号：US5629246A
公开(公告)日：1997-05-13
申请号：US534721
申请日：1995-09-27
申请人： Ravi Iyer
发明人： Ravi Iyer
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/473 , H01L21/4757
CPC分类号： H01L21/02131 , H01L21/02274 , H01L21/02337 , H01L21/02362 , H01L21/3105 , H01L21/31629 , Y10S438/91
摘要： This invention is a method for forming fluorine-doped silicate glass having low concentrations of free fluorine atoms. A first embodiment of the invention provides simultaneous deposition of the fluorine-doped glass and scavenging of free fluorine atoms from the surface of the depositing material. A silicon-containing compound, an oxidizer, a fluorine containing compound and a hydrogen-containing gas are introduced into a plasma chemical vapor deposition chamber. A fluorine-doped glass layer having low concentrations of free fluorine atoms deposits. A second embodiment of the invention provides for scavenging of free fluorine atoms from an already-deposited fluorine-doped glass layer by annealing the layer in a forming gas containing hydrogen. The hydrogen gas diffuses into the deposited film and reacts with free fluorine atoms. The hydrogen fluoride so formed migrates through the matrix to the surface of the deposited film, where it is released into the ambient. A third embodiment of the invention provides a method for decreasing the amount of free fluorine atoms in an already-deposited fluorine-doped glass layer by depositing a capping layer over the glass layer and annealing the resulting stack. Many of the free fluorine atoms in the layer migrate and react with dangling silicon bonds within the layer. A subsequent anneal with the capping layer removed and in the presence of a forming gas containing hydrogen, as heretofore described, further lowers the concentration of free fluorine atoms.
摘要翻译：本发明是形成具有低浓度游离氟原子的氟掺杂硅酸盐玻璃的方法。本发明的第一个实施方案提供了氟掺杂玻璃的同时沉积和从沉积材料的表面清除游离氟原子。将含硅化合物，氧化剂，含氟化合物和含氢气体引入等离子体化学气相沉积室。具有低浓度游离氟原子的氟掺杂玻璃层沉积。本发明的第二个实施方案提供了通过在包含氢气的形成气体中退火层而从已沉积的氟掺杂玻璃层中清除游离氟原子。氢气扩散到沉积膜中并与游离的氟原子反应。如此形成的氟化氢通过基质迁移到沉积膜的表面，在其中被释放到环境中。本发明的第三个实施方案提供了一种通过在玻璃层上沉积覆盖层并退火所得到的堆叠来减少已经沉积的氟掺杂玻璃层中游离氟原子的量的方法。层中的许多自由氟原子迁移并与层内的悬挂硅键反应。如前所述，随着去除覆盖层并在存在含氢气的形成气体的情况下进行随后的退火，进一步降低游离氟原子的浓度。

100. 发明授权

US5624868A Techniques for improving adhesion of silicon dioxide to titanium 失效
标题翻译：提高二氧化硅与钛的附着力的技术
公开(公告)号：US5624868A
公开(公告)日：1997-04-29
申请号：US228054
申请日：1994-04-15
申请人： Ravi Iyer
发明人： Ravi Iyer
IPC分类号： H01L21/316 , H01L21/443
CPC分类号： H01L21/02164 , H01L21/02304 , H01L21/02315 , H01L21/316 , H01L21/31612
摘要： The present invention is described in several embodiments depicted structures and methods to form these structures. A first embodiment is a structure having a silicon dioxide film bonded to a metal film comprising: a metal nitride film bonded to the metal film; and the silicon dioxide film bonded to the metal nitride film. A second embodiment is a structure having a silicon dioxide film bonded to a metal film comprising: a metal oxide film bonded to the metal film; and the silicon dioxide film bonded to the metal oxide film. A third embodiment is a structure having a silicon dioxide film bonded to a metal film comprising: a metal/oxide/nitride film bonded to the metal film; and the silicon dioxide film bonded to the metal/oxide/nitride film.
摘要翻译：在几个实施例中描述了本发明描述了形成这些结构的结构和方法。第一实施例是具有与金属膜结合的二氧化硅膜的结构，包括：与金属膜结合的金属氮化物膜; 和与金属氮化物膜结合的二氧化硅膜。第二实施例是具有与金属膜结合的二氧化硅膜的结构，包括：与金属膜结合的金属氧化物膜; 和与金属氧化物膜结合的二氧化硅膜。第三实施例是具有与金属膜结合的二氧化硅膜的结构，其包括：结合到金属膜的金属/氧化物/氮化物膜; 和与金属/氧化物/氮化物膜结合的二氧化硅膜。

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