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91. 发明申请

US20090111280A1 METHOD FOR REMOVING OXIDES 审中-公开
标题翻译：去除氧化物的方法
公开(公告)号：US20090111280A1
公开(公告)日：2009-04-30
申请号：US12328466
申请日：2008-12-04
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/31
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，将衬底加热到至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层。

92. 发明申请

US20080268645A1 METHOD FOR FRONT END OF LINE FABRICATION 有权
标题翻译：前线制造方法
公开(公告)号：US20080268645A1
公开(公告)日：2008-10-30
申请号：US12134715
申请日：2008-06-06
申请人： CHIEN-TEH KAO , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： CHIEN-TEH KAO , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/311
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.
摘要翻译：在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。该膜通常含有六氟硅酸铵。该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。气体混合物可以含有氨，三氟化氮和载气。

93. 发明申请

US20060051966A1 In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber 审中-公开
标题翻译：从化学气相蚀刻室去除副产物沉积物的原位室清洁过程
公开(公告)号：US20060051966A1
公开(公告)日：2006-03-09
申请号：US11266167
申请日：2005-11-03
申请人： David Or , Jing-Pei Chou , See-Eng Phan , Xinliang Lu , Chien-Teh Kao , Mei Chang
发明人： David Or , Jing-Pei Chou , See-Eng Phan , Xinliang Lu , Chien-Teh Kao , Mei Chang
IPC分类号： H01L21/461 , H01L21/302 , B08B6/00
CPC分类号： H01L21/67109 , C23C16/4405 , H01J37/32082 , H01J37/32357 , H01J37/32522 , H01J2237/2001 , H01L21/67069 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within a processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plate, and introducing a thermally conductive gas through the gas distribution plate into the processing chamber.
摘要翻译：一种用于清洁处理室的方法和装置，包括将冷却流体流阻塞到处理室内的支撑构件内的通道，将支撑构件升高到气体分配板的约0.1英寸以内，加热气体分配板，并且将导热气体通过所述气体分配板引入所述处理室。

94. 发明申请

US20050230350A1 In-situ dry clean chamber for front end of line fabrication 审中-公开
标题翻译：用于前端制造的原位干洗室
公开(公告)号：US20050230350A1
公开(公告)日：2005-10-20
申请号：US11063645
申请日：2005-02-22
申请人： Chien-Teh Kao , Jing-Pei Chou , Chiukin Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei Chou , Chiukin Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个方面，腔室包括室主体和至少部分地设置在腔体内并适于在其上支撑衬底的支撑组件。支撑组件包括至少部分地形成在其中并能够冷却基底的一个或多个流体通道。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括在其间限定等离子体腔的第一电极和第二电极，其中第二电极适于连接地加热衬底。

95. 发明申请

US20120225192A1 Apparatus And Process For Atomic Layer Deposition 审中-公开
标题翻译：用于原子层沉积的装置和工艺
公开(公告)号：US20120225192A1
公开(公告)日：2012-09-06
申请号：US13189692
申请日：2011-07-25
申请人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
发明人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
IPC分类号： C23C16/458 , B05D5/12
CPC分类号： C23C16/45551 , C23C16/45527
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.
摘要翻译：提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。每个气体喷射器单元包括多个细长的气体喷射器，其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器，所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

96. 发明申请

US20120225191A1 Apparatus and Process for Atomic Layer Deposition 审中-公开
标题翻译：原子层沉积的装置和工艺
公开(公告)号：US20120225191A1
公开(公告)日：2012-09-06
申请号：US13037992
申请日：2011-03-01
申请人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
发明人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
IPC分类号： C23C16/455 , B05D5/12
CPC分类号： C23C16/45551 , C23C16/45527
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.
摘要翻译：提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。每个气体喷射器单元包括多个细长的气体喷射器，其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器，所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

97. 发明授权

US10593539B2 Support assembly 有权
公开(公告)号：US10593539B2
公开(公告)日：2020-03-17
申请号：US13457421
申请日：2012-04-26
申请人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
发明人： Chien-Teh Kao , Joel M. Huston , Mei Chang , Xiaoxiong (John) Yuan
IPC分类号： B23K10/00 , H01L21/02 , H01J37/32 , H01L21/67 , C23C14/54 , C23C14/50 , C23C14/02
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

98. 发明授权

US09418890B2 Method for tuning a deposition rate during an atomic layer deposition process 有权
标题翻译：在原子层沉积过程中调整沉积速率的方法
公开(公告)号：US09418890B2
公开(公告)日：2016-08-16
申请号：US14279260
申请日：2014-05-15
申请人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
发明人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
IPC分类号： H01L21/768 , C23C16/455 , C23C16/52
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

99. 发明申请

US20140106565A1 Methods For Atomic Layer Etching 有权
标题翻译：原子层蚀刻方法
公开(公告)号：US20140106565A1
公开(公告)日：2014-04-17
申请号：US14106166
申请日：2013-12-13
申请人： Mei Chang , Joseph Yudovsky
发明人： Mei Chang , Joseph Yudovsky
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67207 , H01L21/67248 , H01L21/6776
摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
摘要翻译：提供了使用原子层沉积装置蚀刻衬底的方法。讨论了包括具有热元件的气体分布板的原子层沉积设备。热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

100. 发明申请

US20130143415A1 Multi-Component Film Deposition 审中-公开
标题翻译：多组分膜沉积
公开(公告)号：US20130143415A1
公开(公告)日：2013-06-06
申请号：US13308849
申请日：2011-12-01
申请人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
发明人： Joseph Yudovsky , Mei Chang , Steven D. Marcus , Garry K. Kwong
IPC分类号： H01L21/31 , B67D7/06 , C23C16/455
CPC分类号： C23C16/45551
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.
摘要翻译：提供的是原子层沉积装置和方法，其包括气体分配板，其包括多个细长气体端口，该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口多数。气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。还提供了原子层沉积装置和方法，其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。

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