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11. 发明申请

WO2009002737A1 TECHNIQUES FOR DETECTING WAFER CHARGING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于检测等离子体处理系统中的波形充电的技术
公开(公告)号：WO2009002737A1
公开(公告)日：2008-12-31
申请号：PCT/US2008/066938
申请日：2008-06-13
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , WALTHER, Steven, R. , KOO, Bon-Woong , LINDSAY, Bernard, G.
发明人： WALTHER, Steven, R. , KOO, Bon-Woong , LINDSAY, Bernard, G.
IPC分类号： H01L21/66 , H01L21/3065 , G01R31/26
CPC分类号： H01J37/3299 , H01J37/32935
摘要： Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.
摘要翻译：公开了一种在等离子体处理系统中检测晶片充电的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片吸取离子。该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。

12. 发明申请

WO2008022084A3 SYSTEMS AND METHODS FOR ISSUING BONUSES IN A GAMING ENVIRONMENT 审中-公开
标题翻译：用于在游戏环境中发放奖励的系统和方法
公开(公告)号：WO2008022084A3
公开(公告)日：2008-11-13
申请号：PCT/US2007075829
申请日：2007-08-13
申请人： ARISTOCRAT TECHNOLOGIES INC , WALTHER STEVEN , BERELOWITZ LAEL
发明人： WALTHER STEVEN , BERELOWITZ LAEL
IPC分类号： G06F7/00 , G06F19/00 , G06Q30/00
CPC分类号： G07F17/3244 , G07F17/32 , G07F17/3258 , G07F17/3272 , G07F17/3276
摘要： Certain embodiments provide systems and methods for promotional or bonus awards in a gaming environment. Certain embodiments provide, in a gaming system having one or more gaming devices for play by players, a method for awarding promotional awards. The method includes detecting an award at a gaming device in the gaming system. The method also includes determining satisfaction of one or more promotional criterion by the award. The method further includes initiating, upon satisfaction of the one or more promotional criterion, a promotional award to a group of one or more players satisfying one or more eligibility criterion.
摘要翻译：某些实施例提供了用于游戏环境中的促销或奖励奖励的系统和方法。在具有供玩家玩耍的一个或多个游戏设备的游戏系统中，某些实施例提供了用于授予促销奖励的方法。该方法包括检测游戏系统中的游戏设备的奖励。该方法还包括通过奖励来确定对一个或多个促销标准的满意度。该方法还包括在满足一个或多个促销标准时，向满足一个或多个合格标准的一组一个或多个玩家发起促销奖励。

13. 发明申请

WO2008022085A3 SYSTEMS AND METHODS FOR DISSEMINATING INFORMATION IN A GAMING ENVIRONMENT 审中-公开
标题翻译：用于在游戏环境中传播信息的系统和方法
公开(公告)号：WO2008022085A3
公开(公告)日：2008-10-30
申请号：PCT/US2007075834
申请日：2007-08-13
申请人： ARISTOCRAT TECHNOLOGIES INC , WALTHER STEVEN , BERELOWITZ LAEL
发明人： WALTHER STEVEN , BERELOWITZ LAEL
IPC分类号： A63F13/00 , A63F3/06 , A63F9/34
CPC分类号： G07F17/3258 , G07F17/32
摘要： Certain embodiments provide systems and methods for awarding jackpots and disseminating information regarding jackpot awards in a gaming environment. Certain embodiments provide a method for announcing jackpot awards including detecting a jackpot awarded at a gaming terminal in the gaming system, determining satisfaction of an announcement criterion by the jackpot, and transmitting, upon satisfaction of the announcement criterion, a jackpot announcement to a group of one or more players satisfying an eligibility criterion. The jackpot announcement may include, for example, an opportunity to win an additional jackpot and/or an award of an additional jackpot. In certain embodiments, the announcement criterion identifies a jackpot sufficient to trigger a jackpot announcement and opportunity for an additional jackpot award. In certain embodiments, the eligibility criterion identifies one or more groups of one or more players who qualify for an opportunity for an additional jackpot.
摘要翻译：某些实施例提供用于授予累积奖金和传播关于游戏环境中的头奖奖励的信息的系统和方法。某些实施例提供了一种用于通知头奖奖励的方法，该方法包括检测在游戏系统中的游戏终端处授予的头奖，确定头奖对通告标准的满意度，并且在满足通知标准时向头奖一个或多个玩家满足资格标准。头奖通告可以包括例如赢得额外头奖和/或奖励额外头奖的机会。在某些实施例中，通告标准识别足以触发累积奖金通告和额外累积奖金奖励的机会的累积奖金。在某些实施例中，资格标准标识一个或多个有资格获得额外头奖的机会的一个或多个玩家组。

14. 发明申请

WO2008022085A2 SYSTEMS AND METHODS FOR DISSEMINATING INFORMATION IN A GAMING ENVIRONMENT 审中-公开
标题翻译：消除游戏环境中的信息的系统和方法
公开(公告)号：WO2008022085A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/075834
申请日：2007-08-13
申请人： ARISTOCRAT TECHNOLOGIES, INC. , WALTHER, Steven , BERELOWITZ, Lael
发明人： WALTHER, Steven , BERELOWITZ, Lael
IPC分类号： G06F17/00
CPC分类号： G07F17/3258 , G07F17/32
摘要： Certain embodiments provide systems and methods for awarding jackpots and disseminating information regarding jackpot awards in a gaming environment. Certain embodiments provide a method for announcing jackpot awards including detecting a jackpot awarded at a gaming terminal in the gaming system, determining satisfaction of an announcement criterion by the jackpot, and transmitting, upon satisfaction of the announcement criterion, a jackpot announcement to a group of one or more players satisfying an eligibility criterion. The jackpot announcement may include, for example, an opportunity to win an additional jackpot and/or an award of an additional jackpot. In certain embodiments, the announcement criterion identifies a jackpot sufficient to trigger a jackpot announcement and opportunity for an additional jackpot award. In certain embodiments, the eligibility criterion identifies one or more groups of one or more players who qualify for an opportunity for an additional jackpot.
摘要翻译：某些实施例提供用于奖励累积奖金的系统和方法以及在游戏环境中传播关于累积奖金的信息。某些实施例提供了一种用于宣布累积奖励奖励的方法，包括检测在游戏系统中的游戏终端授予的累积奖金，确定中奖者对通知标准的满意度，以及在公告标准满足时向一组一名或多名符合条件的球员。大奖公告可以包括例如获得额外累积奖金和/或额外累积奖金的奖励的机会。在某些实施例中，公告标准确定足以触发累积奖励公告的额外奖金和额外累积奖金的机会。在某些实施例中，资格标准识别符合获得额外累积奖励机会的一个或多个玩家的一个或多个组。

15. 发明申请

WO2008022084A2 SYSTEMS AND METHODS FOR ISSUING BONUSES IN A GAMING ENVIRONMENT 审中-公开
标题翻译：用于在游戏环境中发放奖励的系统和方法
公开(公告)号：WO2008022084A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/075829
申请日：2007-08-13
申请人： ARISTOCRAT TECHNOLOGIES, INC. , WALTHER, Steven , BERELOWITZ, Lael
发明人： WALTHER, Steven , BERELOWITZ, Lael
IPC分类号： A63F9/24
CPC分类号： G07F17/3244 , G07F17/32 , G07F17/3258 , G07F17/3272 , G07F17/3276
摘要： Certain embodiments provide systems and methods for promotional or bonus awards in a gaming environment. Certain embodiments provide, in a gaming system having one or more gaming devices for play by players, a method for awarding promotional awards. The method includes detecting an award at a gaming device in the gaming system. The method also includes determining satisfaction of one or more promotional criterion by the award. The method further includes initiating, upon satisfaction of the one or more promotional criterion, a promotional award to a group of one or more players satisfying one or more eligibility criterion.
摘要翻译：某些实施例提供了用于游戏环境中的促销或奖励奖赏的系统和方法。在具有供玩家玩耍的一个或多个游戏设备的游戏系统中，某些实施例提供了用于授予促销奖励的方法。该方法包括检测游戏系统中的游戏设备的奖励。该方法还包括通过奖励来确定对一个或多个促销标准的满意度。该方法进一步包括在满足一个或多个促销标准时，向满足一个或多个合格标准的一组或多个玩家发起促销奖励。

16. 发明申请

WO2007142912A2 NON-UNIFORM ION IMPLANTATION 审中-公开
标题翻译：非均匀离子植入
公开(公告)号：WO2007142912A2
公开(公告)日：2007-12-13
申请号：PCT/US2007012604
申请日：2007-05-24
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , WALTHER STEVEN R , MEHTA SANDEEP
发明人： WALTHER STEVEN R , MEHTA SANDEEP
CPC分类号： H01J37/3171 , H01J37/3026 , H01J37/3172 , H01J2237/30461 , H01J2237/30472 , H01J2237/30488 , H01J2237/31703 , H01J2237/3171
摘要： A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion impianter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion impianter is also provided.
摘要翻译：一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制当离子束入射到工件的前表面上时直接产生所需的二维非均匀剂量图案，该工件相对于离子束在工件表面的一次通过中，离子夹持器的至少一个参数。光束可以是扫描光束或带状光束。还提供了一种离子夹持器。

17. 发明申请

WO2006026180A3 REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES 审中-公开
标题翻译：降低CMOS器件中的源极和漏极寄生电容
公开(公告)号：WO2006026180A3
公开(公告)日：2006-08-03
申请号：PCT/US2005029454
申请日：2005-08-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , EROKHIN YURI , JEONG UKYO , SCHEUER JAY T , WALTHER STEVEN R
发明人： EROKHIN YURI , JEONG UKYO , SCHEUER JAY T , WALTHER STEVEN R
IPC分类号： H01L21/225 , H01L21/265 , H01L21/336 , H01L29/78
CPC分类号： H01L21/2236 , H01L29/66575
摘要： A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.
摘要翻译：一种用于制造基于半导体的器件的方法包括提供掺杂的半导体衬底，将第二掺杂剂引入到衬底中以限定pn结，并将中和物质引入到pn结附近的衬底中，以减少与 pn结。基于半导体的器件包括具有第一和第二掺杂剂的半导体衬底和中和物质。第一和第二掺杂剂限定pn结，并且中和物质中和pn结附近的第一掺杂剂的一部分以减少与pn结相关联的电容。

18. 发明申请

WO2005114692A2 IN-SITU PROCESS CHAMBER PREPARATION METHODS FOR PLASMA ION IMPLANTATION SYSTEMS 审中-公开
标题翻译：等离子体植入系统的现场过程室制备方法
公开(公告)号：WO2005114692A2
公开(公告)日：2005-12-01
申请号：PCT/US2005/017699
申请日：2005-05-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINGH, Vikram , GUPTA, Atul , PERSING, Harold, M. , WALTHER, Steven, R. , TESTONI, Anne, L.
发明人： SINGH, Vikram , GUPTA, Atul , PERSING, Harold, M. , WALTHER, Steven, R. , TESTONI, Anne, L.
IPC分类号： H01J37/00
CPC分类号： H01J37/32495 , H01J37/32412
摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
摘要翻译：用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤或更多的基材。

19. 发明申请

WO2012058445A3 CONTOURED SUPPORT GRID FOR HERMETICALLY SEALED THIN FILM APPLICATIONS 审中-公开
标题翻译：用于人造密封薄膜应用的配套支持网格
公开(公告)号：WO2012058445A3
公开(公告)日：2012-06-21
申请号：PCT/US2011058116
申请日：2011-10-27
申请人： ADVANCED ELECTRON BEAMS INC , BARRY KENNETH J , BROWN MARK T , BUFANO MICHAEL L , FRIEDMAN GERALD M , KING PETER M , MEDFORD MATTHEW A , TESTONI ANNE L , WALTHER STEVEN R
发明人： BARRY KENNETH J , BROWN MARK T , BUFANO MICHAEL L , FRIEDMAN GERALD M , KING PETER M , MEDFORD MATTHEW A , TESTONI ANNE L , WALTHER STEVEN R
IPC分类号： H01J33/00
CPC分类号： H01J33/04 , G21K1/00
摘要： Systems and methods for manufacturing a vacuum device, such as an electron emitter, that includes a foil exit window placed over and joined to a support grid. In one particular method, the vacuum chamber of an election emitter has a thin foil forming an exit window at one end. The thin foil may be titanium or any suitable material and the foil will typically enlarge during a bonding process that attaches the foil to the support grid. In one manufacturing process, the support grid is provided with a surface that has contours, typically being smooth recessed surfaces, that the foil, once enlarged, can lie against as the vacuum pulls the foil against the grid.
摘要翻译：用于制造诸如电子发射器的真空装置的系统和方法，其包括放置在支撑网格上并连接到支撑网格上的箔出口窗口。在一种特定方法中，选举发射器的真空室具有在一端形成出射窗的薄箔。薄箔可以是钛或任何合适的材料，并且箔将通常在将箔附接到支撑网格的粘合过程中扩大。在一个制造过程中，支撑格栅设置有表面，该表面具有轮廓，通常是平滑的凹面，当箔真空将箔拉到格栅上时，箔一旦放大就可以抵住。

20. 发明申请

WO2009052453A3 PLASMA DOPING SYSTEM WITH CHARGE CONTROL 审中-公开
公开(公告)号：WO2009052453A3
公开(公告)日：2009-04-23
申请号：PCT/US2008/080400
申请日：2008-10-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , JEON, Yongbae , SINGH, Vikram , MILLER, Timothy, J. , FANG, Ziwei , WALTHER, Steven, R. , GUPTA, Atul
发明人： JEON, Yongbae , SINGH, Vikram , MILLER, Timothy, J. , FANG, Ziwei , WALTHER, Steven, R. , GUPTA, Atul
IPC分类号： H01L21/22 , H01L21/265 , C23C16/00 , C23C14/00 , H01J37/32
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

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