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1. 发明申请

WO2010080390A2 CONDENSIBLE GAS COOLING SYSTEM 审中-公开
标题翻译：可燃气体冷却系统
公开(公告)号：WO2010080390A2
公开(公告)日：2010-07-15
申请号：PCT/US2009/068002
申请日：2009-12-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , WALTHER, Steven, R.
发明人： WALTHER, Steven, R.
IPC分类号： H01L21/265 , H01L21/683 , H01L21/687
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/002 , H01J2237/2001
摘要： A workpiece cooling system and method are disclosed. Transferring heat away from a workpiece, such as a semiconductor wafer during ion implantation, is essential. Typically this heat is transferred to the workpiece support, or platen. In one embodiment, the desired operating temperature is determined. Based on this, a gas having a vapor pressure within a desired range, such as 10-50 torr, is selected. This range is required to be sufficiently low so as to be less than the clamping force. This condensible gas is used to fill the volume between the workpiece and the workpiece support. Heat transfer occurs based on adsorption and desorption, thereby offering improved transfer properties than traditionally employed gases, such as helium, hydrogen, nitrogen, argon and air.
摘要翻译：公开了一种工件冷却系统和方法。在离子注入期间将热量从工件（例如半导体晶片）传出是至关重要的。通常，这种热量传递到工件支撑件或压板。在一个实施例中，确定期望的操作温度。基于此，选择蒸气压在所需范围内的气体，例如10-50乇。该范围要求足够低以便小于夹紧力。该可冷凝气体用于填充工件和工件支架之间的体积。基于吸附和解吸发生热传递，从而提供比传统使用的气体（例如氦气，氢气，氮气，氩气和空气）更好的转移性能。

2. 发明申请

WO2009151533A3 ELECTRON BEAM EMITTER WITH SLOTTED GUN 审中-公开
标题翻译：带电子枪的电子束发生器
公开(公告)号：WO2009151533A3
公开(公告)日：2010-04-08
申请号：PCT/US2009003116
申请日：2009-05-20
申请人： ADVANCED ELECTRON BEAMS INC , WALTHER STEVEN RAYMOND , BUFANO MICHAEL L , FRIEDMAN GERALD M
发明人： WALTHER STEVEN RAYMOND , BUFANO MICHAEL L , FRIEDMAN GERALD M
IPC分类号： H01J37/06
CPC分类号： H01J37/063 , H01J2237/06308 , H01J2237/06375
摘要： An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.
摘要翻译：电子束发射器包括用于产生电子的电子发生器。电子发生器可以具有包含至少一个用于产生电子的电子源的外壳。该至少一个电子源具有宽度。电子发生器壳体可以具有与至少一个电子源隔开的电子可渗透区域，以允许从电子发生器壳体中提取电子。电子可渗透区域可以包括一系列狭长的狭槽和肋，其形成在电子发生器外壳中并横向延伸超过至少一个电子源的宽度。电子透射区域可以相对于至少一个电子源配置和定位，用于横向扩展由至少一个电子源产生的电子。

3. 发明申请

WO2009151533A8 ELECTRON BEAM EMITTER WITH SLOTTED GUN 审中-公开
标题翻译：带光滑枪的电子束发射器
公开(公告)号：WO2009151533A8
公开(公告)日：2010-02-18
申请号：PCT/US2009003116
申请日：2009-05-20
申请人： ADVANCED ELECTRON BEAMS INC , WALTHER STEVEN RAYMOND , BUFANO MICHAEL L , FRIEDMAN GERALD M
发明人： WALTHER STEVEN RAYMOND , BUFANO MICHAEL L , FRIEDMAN GERALD M
IPC分类号： A61N5/00 , G21G4/00
CPC分类号： H01J37/063 , H01J2237/06308 , H01J2237/06375
摘要： An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.
摘要翻译：电子束发射器包括用于产生电子的电子发生器。电子发生器可以具有包含至少一个用于产生电子的电子源的壳体。至少一个电子源具有宽度。电子发生器壳体可以具有与至少一个电子源间隔开的电子透过区域，用于从电子发生器壳体提取电子。电子透射区域可以包括形成在电子发生器壳体中并且横向延伸超过至少一个电子源的宽度的一系列窄的细长槽和肋。电子可渗透区域可以相对于至少一个电子源被配置和定位，以横向扩展由至少一个电子源产生的电子。

4. 发明申请

WO2009052453A2 PLASMA DOPING SYSTEM WITH CHARGE CONTROL 审中-公开
标题翻译：带充电控制的等离子体掺杂系统
公开(公告)号：WO2009052453A2
公开(公告)日：2009-04-23
申请号：PCT/US2008080400
申请日：2008-10-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
发明人： JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
IPC分类号： H01L21/22 , C23C14/00 , C23C16/00 , H01J37/32 , H01L21/26
CPC分类号： H01J37/32642 , H01J37/32412 , H01J37/32935
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
摘要翻译：等离子体掺杂的方法包括在等离子体室中产生包括支撑衬底的台板附近的掺杂剂离子的等离子体。台板被偏压为具有负电位的偏压电压波形，该偏压电压波形吸引等离子体中的离子到等离子体掺杂的基板。监测至少一个传感器测量与有利于形成放电的充电条件有关的数据。响应于所测量的数据修改至少一个等离子体工艺参数，从而降低形成放电的可能性。

5. 发明申请

WO2009009272A2 CONFORMAL DOPING USING HIGH NEUTRAL PLASMA IMPLANT 审中-公开
标题翻译：使用高中等离子体植入物进行均匀切割
公开(公告)号：WO2009009272A2
公开(公告)日：2009-01-15
申请号：PCT/US2008/067587
申请日：2008-06-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , WALTHER, Steven, R.
发明人： WALTHER, Steven, R.
IPC分类号： C23C16/00 , H01L21/26
CPC分类号： H01J37/32339 , H01J37/32412
摘要： A plasma doping apparatus includes a plasma source that generates a pulsed plasma. A platen supports a substrate proximate to the plasma source for plasma doping. A structure absorbs a film which provides a plurality of neutrals when desorbed. A bias voltage power supply generates a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A radiation source irradiates the film absorbed on the structure, thereby desorbing the film and generating a plurality of neutrals that scatter ions from the plasma while the ions are being attracted to the substrate, thereby performing conformal plasma doping.
摘要翻译：等离子体掺杂装置包括产生脉冲等离子体的等离子体源。压板支撑靠近等离子体源的基板用于等离子体掺杂。结构吸收当解吸时提供多个中性粒子的膜。偏置电压电源产生具有负电位的偏压电压波形，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。辐射源照射吸收在结构上的膜，从而解离该膜并产生多个中和体，其中离子从等离子体中散射，同时离子被吸引到衬底上，由此进行保形等离子体掺杂。

6. 发明申请

WO2008036529A3 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008036529A3
公开(公告)日：2008-08-28
申请号：PCT/US2007078104
申请日：2007-09-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BLAKE JULIAN , ENGLAND JONATHAN GERALD , HOLDEN SCOTT , WALTHER STEVEN R , LIEBERT REUEL , MUKA RICHARD S , JEONG UKYO , LIU JINNING , SHIM KYU-HA , MEHTA SANDEEP
发明人： BLAKE JULIAN , ENGLAND JONATHAN GERALD , HOLDEN SCOTT , WALTHER STEVEN R , LIEBERT REUEL , MUKA RICHARD S , JEONG UKYO , LIU JINNING , SHIM KYU-HA , MEHTA SANDEEP
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

7. 发明申请

WO2008022084A9 SYSTEMS AND METHODS FOR ISSUING BONUSES IN A GAMING ENVIRONMENT 审中-公开
标题翻译：在游戏环境中发行奖金的系统和方法
公开(公告)号：WO2008022084A9
公开(公告)日：2008-05-15
申请号：PCT/US2007075829
申请日：2007-08-13
申请人： ARISTOCRAT TECHNOLOGIES INC , WALTHER STEVEN , BERELOWITZ LAEL
发明人： WALTHER STEVEN , BERELOWITZ LAEL
IPC分类号： A63F9/24
CPC分类号： G07F17/3244 , G07F17/32 , G07F17/3258 , G07F17/3272 , G07F17/3276
摘要： Certain embodiments provide systems and methods for promotional or bonus awards in a gaming environment. Certain embodiments provide, in a gaming system having one or more gaming devices for play by players, a method for awarding promotional awards. The method includes detecting an award at a gaming device in the gaming system. The method also includes determining satisfaction of one or more promotional criterion by the award. The method further includes initiating, upon satisfaction of the one or more promotional criterion, a promotional award to a group of one or more players satisfying one or more eligibility criterion.
摘要翻译：某些实施例在游戏环境中提供促销或奖励奖励的系统和方法。某些实施例在具有玩家玩游戏的一个或多个游戏装置的游戏系统中提供用于授予促销奖励的方法。该方法包括在游戏系统中的游戏设备处检测奖励。该方法还包括通过裁决确定一个或多个促销标准的满意度。该方法还包括在满足一个或多个促销标准时启动促销奖给一个或多个满足一个或多个资格标准的玩家的组。

8. 发明申请

WO2008022083A2 SYSTEMS AND METHODS FOR CONDUCTING A SWEEPSTAKES IN A GAMING ENVIRONMENT 审中-公开
标题翻译：在游戏环境中进行游戏的系统和方法
公开(公告)号：WO2008022083A2
公开(公告)日：2008-02-21
申请号：PCT/US2007075828
申请日：2007-08-13
申请人： ARISTOCRAT TECHNOLOGIES INC , WALTHER STEVEN , BERELOWITZ LAEL
发明人： WALTHER STEVEN , BERELOWITZ LAEL
IPC分类号： G06F17/00
CPC分类号： G07F17/3258 , A63F3/081 , G06Q20/40 , G06Q30/0209 , G07F17/32
摘要： Certain embodiments provide systems and methods for sweepstakes awards in a gaming environment. Certain embodiments provide a method including accumulating sweepstakes entries for a player based on at least one sweepstakes entry criterion and randomly selecting a winner from the pool of sweepstakes entries. The sweepstakes entries are associated with the player and incorporated in a pool of sweepstakes entries. In certain embodiments, the at least one sweepstakes entry criterion comprises at least one of one entry per player, accumulating points based on play, accumulating points based on machine outcome, and coin in. In certain embodiments, the method further includes determining eligibility of a player for the sweepstakes. In certain embodiments, eligibility is determined based on at least one of a player group, a machine group, a machine denomination, a machine type, a machine manufacturer, a game manufacturer, a game theme and a game title, for example.
摘要翻译：某些实施例提供了用于游戏环境中的抽奖奖励的系统和方法。某些实施例提供了一种方法，包括基于至少一个抽奖条目标准累积玩家的抽奖条目，并从抽奖记录池中随机选择获胜者。抽奖记录条目与播放器相关联，并且被并入抽奖记录池中。在某些实施例中，所述至少一个抽奖进入标准包括每个玩家的一个条目中的至少一个，基于游戏累积点数，基于机器结果积累积分和投币。在某些实施例中，该方法还包括确定玩家为抽奖。在某些实施例中，例如，基于玩家组，机器组，机器面额，机器类型，机器制造商，游戏制造商，游戏主题和游戏标题中的至少一个来确定资格。

9. 发明申请

WO2006026180A2 REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES 审中-公开
标题翻译： CMOS器件中源极和漏极寄生电容的降低
公开(公告)号：WO2006026180A2
公开(公告)日：2006-03-09
申请号：PCT/US2005/029454
申请日：2005-08-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , EROKHIN, Yuri , JEONG, Ukyo , SCHEUER, Jay, T. , WALTHER, Steven, R.
发明人： EROKHIN, Yuri , JEONG, Ukyo , SCHEUER, Jay, T. , WALTHER, Steven, R.
IPC分类号： H01L21/225 , H01L21/265 , H01L21/336 , H01L29/78
CPC分类号： H01L21/2236 , H01L29/66575
摘要： A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.
摘要翻译：用于制造基于半导体的器件的方法包括提供掺杂的半导体衬底，将第二掺杂剂引入到衬底中以限定pn结，并且将中和物质引入衬底中的邻近衬底 pn结以减小与pn结相关联的电容。基于半导体的器件包括具有第一和第二掺杂剂以及中和物质的半导体衬底。第一和第二掺杂剂限定pn结，并且中和物质中和pn结附近的第一掺杂剂的一部分，以减小与pn结相关的电容。

10. 发明申请

WO2012058445A2 CONTOURED SUPPORT GRID FOR HERMETICALLY SEALED THIN FILM APPLICATIONS 审中-公开
标题翻译：用于密封式薄膜应用的变形支撑网格
公开(公告)号：WO2012058445A2
公开(公告)日：2012-05-03
申请号：PCT/US2011/058116
申请日：2011-10-27
申请人： ADVANCED ELECTRON BEAMS, INC. , BARRY, Kenneth, J. , BROWN, Mark, T. , BUFANO, Michael, L. , FRIEDMAN, Gerald, M. , KING, Peter, M. , MEDFORD, Matthew, A. , TESTONI, Anne, L. , WALTHER, Steven, R.
发明人： BARRY, Kenneth, J. , BROWN, Mark, T. , BUFANO, Michael, L. , FRIEDMAN, Gerald, M. , KING, Peter, M. , MEDFORD, Matthew, A. , TESTONI, Anne, L. , WALTHER, Steven, R.
IPC分类号： H01J1/50
CPC分类号： H01J33/04 , G21K1/00
摘要： Systems and methods for manufacturing a vacuum device, such as an electron emitter, that includes a foil exit window placed over and joined to a support grid. In one particular method, the vacuum chamber of an election emitter has a thin foil forming an exit window at one end. The thin foil may be titanium or any suitable material and the foil will typically enlarge during a bonding process that attaches the foil to the support grid. In one manufacturing process, the support grid is provided with a surface that has contours, typically being smooth recessed surfaces, that the foil, once enlarged, can lie against as the vacuum pulls the foil against the grid.
摘要翻译：用于制造真空装置（例如电子发射器）的系统和方法，所述真空装置包括放置在支撑格栅上并连接到支撑格栅上的箔片出射窗口。在一个特定的方法中，选择发射极的真空室具有在一端形成出射窗的薄箔。薄箔可以是钛或任何合适的材料，并且在将箔附着到支撑格栅的粘合过程期间，箔通常会增大。在一个制造过程中，支撑格栅具有具有轮廓的表面，典型地为光滑的凹陷表面，箔片一旦被放大就可以抵靠，因为真空将箔片拉向格栅。

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