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31. 发明授权

US08491967B2 In-situ chamber treatment and deposition process 有权
标题翻译：原位室处理和沉积过程
公开(公告)号：US08491967B2
公开(公告)日：2013-07-23
申请号：US12206705
申请日：2008-09-08
申请人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
发明人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
IPC分类号： B05D5/12
CPC分类号： C23C16/34 , C23C16/4411 , C23C16/45508 , C23C16/45531 , C23C16/45582 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).
摘要翻译：本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。游离配体通常在沉积过程中通过氢化或热解形成。在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属有机化学前体，例如五（二甲基氨基）钽（PDMAT）。

32. 发明授权

US07780785B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07780785B2
公开(公告)日：2010-08-24
申请号：US10281079
申请日：2002-10-25
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.
摘要翻译：提供了一种用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。一方面，该装置包括具有基板接收表面的基板支撑件和包括从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室盖的周边部分的底面，所述底表面的形状和尺寸基本上覆盖所述基板接收表面。该装置还包括联接到逐渐扩大的通道的一个或多个阀以及联接到每个阀的一个或多个气体源。

33. 发明申请

US20100062614A1 IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS 有权
标题翻译：现场室处理和沉积过程
公开(公告)号：US20100062614A1
公开(公告)日：2010-03-11
申请号：US12206705
申请日：2008-09-08
申请人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
发明人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
IPC分类号： H01L21/314
CPC分类号： C23C16/34 , C23C16/4411 , C23C16/45508 , C23C16/45531 , C23C16/45582 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).
摘要翻译：本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。游离配体通常在沉积过程中通过氢化或热解形成。在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属 - 有机化学前体，例如五（二甲基氨基）钽（PDMAT）。

34. 发明申请

US20090308318A1 APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING 有权
标题翻译：混合化学处理的装置和方法
公开(公告)号：US20090308318A1
公开(公告)日：2009-12-17
申请号：US12544729
申请日：2009-08-20
申请人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳基板支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

35. 发明授权

US07591907B2 Apparatus for hybrid chemical processing 有权
标题翻译：混合化学处理装置
公开(公告)号：US07591907B2
公开(公告)日：2009-09-22
申请号：US12172092
申请日：2008-07-11
申请人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/34
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳基板支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

36. 发明申请

US20080274299A1 APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US20080274299A1
公开(公告)日：2008-11-06
申请号：US12172092
申请日：2008-07-11
申请人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳衬底支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

37. 发明申请

US20140252015A1 High Temperature Process Chamber Lid 有权
标题翻译：高温加工室盖
公开(公告)号：US20140252015A1
公开(公告)日：2014-09-11
申请号：US14204252
申请日：2014-03-11
申请人： Ilker Durukan , Joel M. Huston , Dien-Yeh Wu , Chien-Teh Kao , Mei Chang
发明人： Ilker Durukan , Joel M. Huston , Dien-Yeh Wu , Chien-Teh Kao , Mei Chang
IPC分类号： B65D43/02
CPC分类号： H01L21/67126 , H01L21/6719
摘要： Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.
摘要翻译：描述了包括盖组件的处理室和处理室的盖组件。盖组件包括高温盖模块和壳体。高温盖模块位于处理室的处理衬垫附近。柔性壳体围绕高温盖模块定位，并与弹性体环连接到高温盖模块。

38. 发明授权

US08070879B2 Apparatus and method for hybrid chemical processing 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US08070879B2
公开(公告)日：2011-12-06
申请号：US12544729
申请日：2009-08-20
申请人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/34
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳基板支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

39. 发明授权

US07204886B2 Apparatus and method for hybrid chemical processing 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US07204886B2
公开(公告)日：2007-04-17
申请号：US10712690
申请日：2003-11-13
申请人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： Ling Chen , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/06
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate surface to be processed within a chamber body, delivering two or more compounds into the chamber body utilizing a gas distribution assembly disposed on the chamber body to deposit a film comprising a first material, and then delivering two or more compounds into the chamber body utilizing a gas distribution assembly disposed on the chamber body to deposit a film comprising a second material. In one aspect of these embodiments, the gas distribution assembly includes a gas conduit in fluid communication with the chamber body, two or more isolated gas inlets equipped with one or more high speed actuating valves in fluid communication with the gas conduit, and a mixing channel in fluid communication with the gas conduit. The valves are adapted to alternately pulse one or more compounds into the gas conduit, and the mixing channel is adapted to deliver a continuous flow of one or more compounds into the gas conduit.
摘要翻译：提供了一种用于执行多个沉积工艺的方法和装置。在一个实施例中，该装置包括室主体和设置在室主体上的气体分配组件。在一个实施例中，该方法包括将待处理的衬底表面定位在室主体内，使用设置在室主体上的气体分布组件将两个或更多个化合物输送到室主体中以沉积包含第一材料的膜，然后输送使用设置在室主体上的气体分配组件将两种或更多种化合物进入室体，以沉积包含第二材料的膜。在这些实施例的一个方面，气体分配组件包括与腔室主体流体连通的气体导管，配备有一个或多个与气体导管流体连通的高速致动阀的隔离气体入口，以及混合通道与气体管道流体连通。这些阀适于交替地将一种或多种化合物脉动地输送到气体导管中，并且混合通道适于将一种或多种化合物的连续流输送到气体导管中。

40. 发明授权

US07699023B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07699023B2
公开(公告)日：2010-04-20
申请号：US11925667
申请日：2007-10-26
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
IPC分类号： C23C16/455 , C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.
摘要翻译：本文所述的实施例提供了用于执行原子层沉积工艺的装置和方法。在一个实施例中，沉积室组件包含具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖，以及从通道延伸到外部部分的底部表面室盖，底表面的形状和尺寸以基本上覆盖基板接收表面。该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。在一个示例中，气体源是气体箱组件，其通过至少一个分离配件附接到沉积室，并且包含远离气体出口的入口管。

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