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1. 发明授权

US07699023B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07699023B2
公开(公告)日：2010-04-20
申请号：US11925667
申请日：2007-10-26
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
IPC分类号： C23C16/455 , C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.
摘要翻译：本文所述的实施例提供了用于执行原子层沉积工艺的装置和方法。在一个实施例中，沉积室组件包含具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖，以及从通道延伸到外部部分的底部表面室盖，底表面的形状和尺寸以基本上覆盖基板接收表面。该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。在一个示例中，气体源是气体箱组件，其通过至少一个分离配件附接到沉积室，并且包含远离气体出口的入口管。

2. 发明授权

US07597758B2 Chemical precursor ampoule for vapor deposition processes 有权
标题翻译：用于气相沉积工艺的化学前体安瓿瓶
公开(公告)号：US07597758B2
公开(公告)日：2009-10-06
申请号：US11849125
申请日：2007-08-31
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B23/08
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.
摘要翻译：本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在内部体积的较低区域。该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝向侧壁引导并从出口端口移开。在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

3. 发明授权

US07588736B2 Apparatus and method for generating a chemical precursor 有权
标题翻译：用于产生化学前体的装置和方法
公开(公告)号：US07588736B2
公开(公告)日：2009-09-15
申请号：US11383642
申请日：2006-05-16
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： F27B15/08
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.
摘要翻译：提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。在一个实施例中，挡板包含在位于罐底部的预制插入件上。在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

4. 发明申请

US20050173068A1 Gas delivery apparatus and method for atomic layer deposition 有权
公开(公告)号：US20050173068A1
公开(公告)日：2005-08-11
申请号：US11077753
申请日：2005-03-11
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , C23F1/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

5. 发明授权

US06228208B1 Plasma density and etch rate enhancing semiconductor processing chamber 失效
标题翻译：等离子体密度和蚀刻速率增强半导体处理室
公开(公告)号：US06228208B1
公开(公告)日：2001-05-08
申请号：US09133279
申请日：1998-08-12
申请人： Thorsten Lill , Alan Ouye
发明人： Thorsten Lill , Alan Ouye
IPC分类号： C23F102
CPC分类号： H01J37/32458
摘要： A lid assembly for a narrow-gap magnetically enhanced reactive ion etch (MERIE) chamber. The lid assembly has a lid and a liner. Both pieces are substantially U-shaped and interfit such that the interface between them extends outside the chamber. A blocker plate is situated in a recess between a lower surface of the lid and an upper surface of the liner. The blocker plate is concave in shape so that a downward bow of the lid does not exert a stress on the blocker plate. The novel lid assembly is more leak resistant, requires less cleaning time and is cheaper than a design that utilizes a moving pedestal.
摘要翻译：用于窄间隙磁性增强反应离子蚀刻（MERIE）室的盖组件。盖组件具有盖和衬垫。两个部件基本上是U形的并且互相配合使得它们之间的界面延伸到室外。阻挡板位于盖的下表面和衬垫的上表面之间的凹部中。阻挡板的形状是凹形的，使得盖的向下弓不会在阻挡板上施加应力。新颖的盖组件更具防漏性，需要较少的清洁时间，并且比使用移动底座的设计便宜。

6. 发明授权

US07524374B2 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US07524374B2
公开(公告)日：2009-04-28
申请号：US10590448
申请日：2004-05-27
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B21/02
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/4481 , H01L21/28562 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

7. 发明申请

US20080041313A1 GAS DELIVERY APPARATUS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US20080041313A1
公开(公告)日：2008-02-21
申请号：US11925667
申请日：2007-10-26
申请人： LING CHEN , VINCENT KU , DIEN-YEH WU , HUA CHUNG , ALAN OUYE , NORMAN NAKASHIMA , MEI CHANG
发明人： LING CHEN , VINCENT KU , DIEN-YEH WU , HUA CHUNG , ALAN OUYE , NORMAN NAKASHIMA , MEI CHANG
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： Embodiments as described here provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is an ampoule assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.
摘要翻译：这里描述的实施例提供了一种用于执行原子层沉积工艺的装置和方法。在一个实施例中，沉积室组件包括具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室的周边部分的底表面盖，底表面成形并定尺寸为基本上覆盖基板接收表面。该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。在一个示例中，气源是安瓿组件，其通过至少一个断开配件附接到沉积室，并且包含远离气体出口的入口管。

8. 发明申请

US20070099415A1 INTEGRATION PROCESS OF TUNGSTEN ATOMIC LAYER DEPOSITION FOR METALLIZATION APPLICATION 审中-公开
标题翻译：用于金属化应用的金属原子层沉积的集成过程
公开(公告)号：US20070099415A1
公开(公告)日：2007-05-03
申请号：US11549941
申请日：2006-10-16
申请人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成含钨材料的方法，其包括将具有下层钨层的衬底定位在处理室内，并且在循环层沉积期间将下述钨层上沉积含钨阻挡层处理。含钨阻挡层含有难熔金属氮化物材料。该方法进一步提供在气相沉积工艺期间在含钨阻挡层上沉积种子层，并且在化学气相沉积工艺期间在种子层上沉积体钨层。

9. 发明申请

US20060257295A1 APPARATUS AND METHOD FOR GENERATING A CHEMICAL PRECURSOR 有权
标题翻译：用于生成化学前体的装置和方法
公开(公告)号：US20060257295A1
公开(公告)日：2006-11-16
申请号：US11383642
申请日：2006-05-16
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： B01J8/18
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.
摘要翻译：提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。在一个实施例中，挡板包含在位于罐底部的预制插入件上。在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

10. 发明授权

US06916398B2 Gas delivery apparatus and method for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置和方法
公开(公告)号：US06916398B2
公开(公告)日：2005-07-12
申请号：US10032284
申请日：2001-12-21
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：气体输送组件的一个实施例包括覆盖构件，该覆盖构件在覆盖构件的中心部分处具有扩张通道，并且具有从膨胀通道延伸到覆盖构件的周边部分的底面。一个或多个气体导管联接到膨胀通道，在该扩张通道中，一个或多个气体导管与扩张通道的中心成一角度定位。室的一个实施例包括具有基板接收表面的基板支撑件。该腔室还包括腔室盖，该室盖具有在腔室盖的中心部分处的通道和从通道延伸到腔室盖的周边部分的锥形底面。室盖的底表面的形状和尺寸基本上覆盖基板接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。在一个方面，室盖的底表面可以是锥形的。在另一方面，限定在室盖和基板接收表面之间的反应区域可以包括小体积。在另一方面，通道可以包括从腔室盖的中心部分延伸的锥形扩张通道。腔室的另一实施例包括具有基底接收表面的基底支撑件。腔室还包括腔室盖，其具有从腔室盖的中心部分延伸的膨胀通道，并且具有从膨胀通道延伸到腔室盖的周边部分的锥形底面。一个或多个气体管道设置在扩张通道的上部周围，其中一个或多个气体管道以与扩张通道的中心成一定角度设置。扼流圈设置在邻近锥形底面的周边的腔室盖上。

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