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41. 发明申请

US20080296585A1 GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE 失效
标题翻译： GaN晶体和GaN晶体衬底的生长方法
公开(公告)号：US20080296585A1
公开(公告)日：2008-12-04
申请号：US12130082
申请日：2008-05-30
申请人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： H01L29/207 , H01L21/205
CPC分类号： C30B29/406 , C30B25/20
摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
摘要翻译：制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。该方法包括以下步骤：制备包括第一掺杂剂的GaN籽晶衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度在GaN晶种衬底上。因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

42. 发明申请

US20100322841A1 III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate 有权
标题翻译： III型氮化物单晶锭，III型氮化物单晶基板，III型氮化物单晶锭的制造方法以及制造III型氮化物单晶基板的方法
公开(公告)号：US20100322841A1
公开(公告)日：2010-12-23
申请号：US12864874
申请日：2008-12-24
申请人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
发明人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
IPC分类号： C30B23/02 , C01B21/06
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/12
摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.
摘要翻译：提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法，在长度延长生长期间的裂纹减少。其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面，因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

43. 发明授权

US08258051B2 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal 有权
标题翻译：制造III族氮化物晶体的方法以及利用晶体的半导体器件
公开(公告)号：US08258051B2
公开(公告)日：2012-09-04
申请号：US12467297
申请日：2009-05-17
申请人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： H01L21/20 , C30B19/12 , C30B25/18
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).
摘要翻译：本III-氮化物晶体制造方法，通过选择指定的具有除{0001}以外的面取向主面（20m）的III族氮化物晶体（20）的制造方法包括：将III族氮化物晶体大块晶体（1）分成多个具有指定平面取向的主表面（10pm），（10qm）的III族氮化物晶体基板（10p），（10q）将基板（10p），（10q），（10q）的主表面（10pm），（10qm）彼此平行的方式设置为彼此相邻的基板（10p），（10q）的步骤，（10p），（10q）的方向相同的方向取向; 以及在衬底（10p），（10q）的主表面（10μm），（10qm）上生长III族氮化物晶体（20）的步骤。

44. 发明授权

US07723142B2 Growth method of GaN crystal, and GaN crystal substrate 失效
标题翻译： GaN晶体和GaN晶体衬底的生长方法
公开(公告)号：US07723142B2
公开(公告)日：2010-05-25
申请号：US12130082
申请日：2008-05-30
申请人： Naoki Matsumoto , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Naoki Matsumoto , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： H01L21/00 , H01L31/20
CPC分类号： C30B29/406 , C30B25/20
摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
摘要翻译：制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。该方法包括以下步骤：制备包括第一掺杂剂的GaN晶种衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度在GaN晶种衬底上。因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

45. 发明授权

US08421190B2 Group III nitride semiconductor substrate and manufacturing method thereof 有权
标题翻译： III族氮化物半导体衬底及其制造方法
公开(公告)号：US08421190B2
公开(公告)日：2013-04-16
申请号：US12899942
申请日：2010-10-07
申请人： Takuji Okahisa , Hideaki Nakahata , Seiji Nakahata
发明人： Takuji Okahisa , Hideaki Nakahata , Seiji Nakahata
IPC分类号： H01L29/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/02433 , H01L21/0254 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02647
摘要： A method of manufacturing a group III nitride semiconductor substrate includes the growth step of epitaxially growing a first group III nitride semiconductor layer on an underlying substrate, and the process step of forming a first group III nitride semiconductor substrate by cutting and/or surface-polishing the first group III nitride semiconductor layer. In the growth step, at least one element selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb is added as an impurity element by at least 1×1017 cm−3 to the first group III nitride semiconductor layer. A group III nitride semiconductor substrate having controlled resistivity and low dislocation density and a manufacturing method thereof can thus be provided.
摘要翻译：制造III族氮化物半导体衬底的方法包括在下面的衬底上外延生长第一III族氮化物半导体层的生长步骤，以及通过切割和/或表面抛光形成第一III族氮化物半导体衬底的工艺步骤第一III族氮化物半导体层。在生长步骤中，将选自C，Mg，Fe，Be，Zn，V和Sb中的至少一种元素作为杂质元素添加至至少1×1017cm-3至第一III族氮化物半导体层。因此可以提供具有受阻电阻率和位错密度低的III族氮化物半导体衬底及其制造方法。

46. 发明授权

US08845992B2 III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate 有权
标题翻译： III族氮化物单晶锭，III族氮化物单晶衬底，III族氮化物单晶锭的制造方法以及III族氮化物单晶衬底的制造方法
公开(公告)号：US08845992B2
公开(公告)日：2014-09-30
申请号：US12864874
申请日：2008-12-24
申请人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
发明人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
IPC分类号： C01B21/06 , C01C1/02 , C30B23/00 , C30B25/00 , C30B28/12 , C30B29/40 , C30B33/12 , C30B25/02
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/12
摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.
摘要翻译：提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法，在长度延长生长期间的裂纹减少。其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面，因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

47. 发明授权

US08404042B2 Group-III nitride crystal composite 有权
标题翻译： III族氮化物晶体复合材料
公开(公告)号：US08404042B2
公开(公告)日：2013-03-26
申请号：US13564731
申请日：2012-08-02
申请人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： C30B19/12 , C30B25/18
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way.
摘要翻译： III族氮化物晶体复合材料由通常为{0001}主表面并且彼此侧向彼此相邻并且在本体晶片上外延的III族氮化物晶体的III族氮化物块状晶体切割的特别加工的晶片形成。切片被布置成使得它们的主表面彼此平行但不一定彼此齐平，并且使得切片中的[0001]方向以相同的方式取向。

48. 发明申请

US20090236694A1 Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal 有权
标题翻译： III型氮化物晶体的制造方法以及利用该晶体的半导体装置
公开(公告)号：US20090236694A1
公开(公告)日：2009-09-24
申请号：US12467297
申请日：2009-05-17
申请人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20m) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10p), (10q) having major surfaces (10pm), (10qm) of the designated plane orientation; a step of disposing the substrates (10p), (10q) adjoining each other sideways in such a way that the major surfaces (10pm), (10qm) of the substrates (10p), (10q) parallel each other and so that the [0001] directions in the substrates (10p), (10q) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10pm), (10qm) of the substrates (10p), (10q).
摘要翻译：本III-氮化物晶体制造方法，通过选择指定的具有除{0001}以外的面取向主面（20m）的III族氮化物晶体（20）的制造方法包括：将III族氮化物晶体大块晶体（1）分成多个具有指定平面取向的主表面（10pm），（10qm）的III族氮化物晶体基板（10p），（10q）将基板（10p），（10q），（10q）的主表面（10pm），（10qm）彼此平行的方式设置为彼此相邻的基板（10p），（10q）的步骤，（10p），（10q）的方向相同的方向取向; 以及在衬底（10p），（10q）的主表面（10μm），（10qm）上生长III族氮化物晶体（20）的步骤。

49. 发明申请

US20070012943A1 Group III nitride semiconductor substrate and manufacturing method thereof 审中-公开
标题翻译： III族氮化物半导体衬底及其制造方法
公开(公告)号：US20070012943A1
公开(公告)日：2007-01-18
申请号：US11482124
申请日：2006-07-07
申请人： Takuji Okahisa , Hideaki Nakahata , Seiji Nakahata
发明人： Takuji Okahisa , Hideaki Nakahata , Seiji Nakahata
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/02433 , H01L21/0254 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02647
摘要： A method of manufacturing a group III nitride semiconductor substrate includes the growth step of epitaxially growing a first group III nitride semiconductor layer on an underlying substrate, and the process step of forming a first group III nitride semiconductor substrate by cutting and/or surface-polishing the first group III nitride semiconductor layer. In the growth step, at least one element selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb is added as an impurity element by at least 1×1017 cm−3 to the first group III nitride semiconductor layer. A group III nitride semiconductor substrate having controlled resistivity and low dislocation density and a manufacturing method thereof can thus be provided.
摘要翻译：制造III族氮化物半导体衬底的方法包括在下面的衬底上外延生长第一III族氮化物半导体层的生长步骤，以及通过切割和/或表面抛光形成第一III族氮化物半导体衬底的工艺步骤第一III族氮化物半导体层。在生长步骤中，将选自C，Mg，Fe，Be，Zn，V和Sb中的至少一种元素作为杂质元素加入至少1×10 17 cm -1 > -3 到第一III族氮化物半导体层。因此可以提供具有受阻电阻率和位错密度低的III族氮化物半导体衬底及其制造方法。

50. 发明申请

US20090032907A1 Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
标题翻译：生产GaxIn1-xN（0x）晶体Gaxin1-xn（0
公开(公告)号：US20090032907A1
公开(公告)日：2009-02-05
申请号：US11919705
申请日：2006-08-17
申请人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
发明人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译：看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1））晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12）在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热，基底基板（7）被单独加热。

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