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61. 发明授权

US07265048B2 Reduction of copper dewetting by transition metal deposition 有权
标题翻译：通过过渡金属沉积减少铜的去湿
公开(公告)号：US07265048B2
公开(公告)日：2007-09-04
申请号：US11069514
申请日：2005-03-01
申请人： Hua Chung , Seshadri Ganguli , Christophe Marcadal , Jick M. Yu
发明人： Hua Chung , Seshadri Ganguli , Christophe Marcadal , Jick M. Yu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , H01L21/28556 , H01L21/76868 , H01L21/76873 , H01L2221/1089
摘要： A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.
摘要翻译：一种用于在衬底上形成层的方法和装置，包括在具有孔的衬底表面上沉积金属籽晶层，在铜籽晶层上沉积过渡金属层，以及在过渡金属层上沉积体金属层。还有一种用于通过电介质形成通孔以在通孔底部露出金属的方法和装置，沉积过渡金属层，以及在过渡金属层上沉积第一金属层。另外，一种用于在暴露的金属表面上沉积过渡金属层并在其上沉积选自由封盖层和低介电常数层组成的层的方法和装置。

62. 发明申请

US20050074968A1 Tantalum barrier layer for copper metallization 有权
标题翻译：用于铜金属化的钽阻挡层
公开(公告)号：US20050074968A1
公开(公告)日：2005-04-07
申请号：US10693775
申请日：2003-10-25
申请人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
发明人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76865
摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.
摘要翻译：在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如的Ta / TaN，通过底部和侧壁。这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

63. 发明申请

US20110233778A1 FORMATION OF LINER AND BARRIER FOR TUNGSTEN AS GATE ELECTRODE AND AS CONTACT PLUG TO REDUCE RESISTANCE AND ENHANCE DEVICE PERFORMANCE 有权
标题翻译：形成用于电极电极和接触电极的衬里和障板，以降低电阻和增强器件性能
公开(公告)号：US20110233778A1
公开(公告)日：2011-09-29
申请号：US12730888
申请日：2010-03-24
申请人： Sang-Hyeob Lee , Sang Ho Yu , Wei Ti Lee , Seshadri Ganguli , Hyoung-Chan Ha , Hoon Kim
发明人： Sang-Hyeob Lee , Sang Ho Yu , Wei Ti Lee , Seshadri Ganguli , Hyoung-Chan Ha , Hoon Kim
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/485 , C23C16/34 , H01L21/28088 , H01L21/28556 , H01L21/321 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L21/76886 , H01L23/53266 , H01L27/10891 , H01L29/4236 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.
摘要翻译：本发明提供了一种在衬底上形成膜堆叠的方法，包括在衬底上沉积氮化钨层，使用来自远程等离子体的活性氮物质对衬底进行氮化处理，并将导电体层直接沉积在钨上氮化物层，而不在钨氮化物层上沉积钨成核层，作为钨的生长位置。

64. 发明授权

US07748400B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07748400B2
公开(公告)日：2010-07-06
申请号：US12500314
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.
摘要翻译：实施例涉及包含旁路管线和阀门的安瓿组件。在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一个截止阀，以及另一截止阀，其设置在安瓿主体和断开出口管路上的接头。

65. 发明授权

US07678194B2 Method for providing gas to a processing chamber 有权
标题翻译：向处理室提供气体的方法
公开(公告)号：US07678194B2
公开(公告)日：2010-03-16
申请号：US11563830
申请日：2006-11-28
申请人： Seshadri Ganguli , Ling Chen , Vincent W. Ku
发明人： Seshadri Ganguli , Ling Chen , Vincent W. Ku
IPC分类号： C30B21/04
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.
摘要翻译：提供了一种用于产生用于处理系统的气体的方法和装置。在一个实施例中，一种用于产生用于处理系统的气体的装置包括：罐，其具有设置在两个端口之间的至少一个挡板并且容纳前体材料。当在限定的压力下加热到限定的温度时，前体材料适于产生气体蒸气。挡板迫使载气在入口和出口之间延伸平均路径。在另一个实施例中，一种用于产生气体的装置包括一个罐，该罐具有一个管，其引导流入罐中的载气远离设置在罐内的前体材料。

66. 发明授权

US07576002B2 Multi-step barrier deposition method 失效
标题翻译：多步势垒沉积法
公开(公告)号：US07576002B2
公开(公告)日：2009-08-18
申请号：US11184431
申请日：2005-07-19
申请人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
发明人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
IPC分类号： H01L21/00 , H01L21/4763
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76865
摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.
摘要翻译：在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如的Ta / TaN，通过底部和侧壁。这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

67. 发明申请

US20070110898A1 METHOD AND APPARATUS FOR PROVIDING PRECURSOR GAS TO A PROCESSING CHAMBER 有权
标题翻译：将前期气体提供给加工室的方法和装置
公开(公告)号：US20070110898A1
公开(公告)日：2007-05-17
申请号：US11613153
申请日：2006-12-19
申请人： Seshadri Ganguli , Ling Chen , Vincent Ku
发明人： Seshadri Ganguli , Ling Chen , Vincent Ku
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.
摘要翻译：在一个实施方案中，提供了一种用于产生气相沉积处理系统中使用的气态化学前体的装置，其包括一个罐，该罐包括侧壁，顶部和包围内部容积的底部，入口和出口在流体与内部容积的连通，以及从入口延伸到罐中的入口管。该装置还可以在内部容积内容纳多个挡板，其在罐的顶部和底部之间延伸，以及包含在内部容积内的前体浆料，其中前体浆料包含固体前体材料和导热材料，对固体前体材料没有反应。在一个实例中，固体前体材料固体前体材料是五（二甲基氨基）钽。

68. 发明授权

US06872429B1 Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber 失效
标题翻译：在化学气相沉积室中使用等离子体预处理沉积氮化钨
公开(公告)号：US06872429B1
公开(公告)日：2005-03-29
申请号：US09067429
申请日：1998-04-27
申请人： Ling Chen , Seshadri Ganguli , Alfred Mak
发明人： Ling Chen , Seshadri Ganguli , Alfred Mak
IPC分类号： C23C16/02 , C23C16/14 , C23C16/34 , C23C16/52 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/49 , H05H1/24
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/28556 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer with improved adhesion. The deposition is performed by first pretreating the wafer with a hydrogen plasma prior to performing tungsten nitride deposition.
摘要翻译：一层氮化钨沉积在晶片的上表面上，具有改善的粘附力。通过在进行氮化钨沉积之前首先用氢等离子体预处理晶片来进行沉积。

69. 发明授权

US09129945B2 Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance 有权
标题翻译：形成作为栅电极的钨线和屏障，作为接触插塞，以降低电阻并提高器件性能
公开(公告)号：US09129945B2
公开(公告)日：2015-09-08
申请号：US12730888
申请日：2010-03-24
申请人： Sang-Hyeob Lee , Sang Ho Yu , Wei Ti Lee , Seshadri Ganguli , Hyoung-Chan Ha , Hoon Kim
发明人： Sang-Hyeob Lee , Sang Ho Yu , Wei Ti Lee , Seshadri Ganguli , Hyoung-Chan Ha , Hoon Kim
IPC分类号： H01L23/532 , H01L21/768 , H01L23/485 , C23C16/34 , H01L21/28 , H01L21/285 , H01L21/321 , H01L27/108 , H01L29/423
CPC分类号： H01L23/485 , C23C16/34 , H01L21/28088 , H01L21/28556 , H01L21/321 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L21/76886 , H01L23/53266 , H01L27/10891 , H01L29/4236 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.
摘要翻译：本发明提供了一种在衬底上形成膜堆叠的方法，包括在衬底上沉积氮化钨层，使用来自远程等离子体的活性氮物质对衬底进行氮化处理，并将导电体层直接沉积在钨上氮化物层，而不在钨氮化物层上沉积钨成核层，作为钨的生长位置。

70. 发明申请

US20090314370A1 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 有权
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：US20090314370A1
公开(公告)日：2009-12-24
申请号：US12500314
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K21/00
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.
摘要翻译：实施例涉及包含旁路管线和阀门的安瓿组件。在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一截止阀，以及设置在安瓿主体和断开出口管路上的接头。

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