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1. 发明授权

US07832432B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07832432B2
公开(公告)日：2010-11-16
申请号：US12500319
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

2. 发明申请

US20090314370A1 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 有权
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：US20090314370A1
公开(公告)日：2009-12-24
申请号：US12500314
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K21/00
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.
摘要翻译：实施例涉及包含旁路管线和阀门的安瓿组件。在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一截止阀，以及设置在安瓿主体和断开出口管路上的接头。

3. 发明授权

US07748400B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07748400B2
公开(公告)日：2010-07-06
申请号：US12500314
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.
摘要翻译：实施例涉及包含旁路管线和阀门的安瓿组件。在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一个截止阀，以及另一截止阀，其设置在安瓿主体和断开出口管路上的接头。

4. 发明授权

US07568495B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07568495B2
公开(公告)日：2009-08-04
申请号：US11925670
申请日：2007-10-26
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the input line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以便将输入管线和出口管线流体耦合或解耦。

5. 发明授权

US07562672B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07562672B2
公开(公告)日：2009-07-21
申请号：US11394448
申请日：2006-03-30
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.
摘要翻译：安瓿组件配置有旁通管线和阀，以允许清洗连接到安瓿的管线和阀。在一个实施例中，安瓿组件包括安瓿瓶，入口管线，出口管线和连接在入口管线和出口管线之间的旁通管线，旁通管线具有设置在其中的截止阀以流体耦合或解耦入口管线和出口管路。设置在旁路管路中的截止阀可以是远程控制的。此外，可以在入口和出口管线中设置附加的可远程控制的截止阀。

6. 发明申请

US20100006167A1 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 有权
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：US20100006167A1
公开(公告)日：2010-01-14
申请号：US12500319
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K21/00
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

7. 发明授权

US07682946B2 Apparatus and process for plasma-enhanced atomic layer deposition 有权
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US07682946B2
公开(公告)日：2010-03-23
申请号：US11556763
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： H01L21/20
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide a method for forming a material on a substrate during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a method is provided which includes flowing at least one process gas through at least one conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, sequentially pulsing at least one chemical precursor into the process gas and igniting a plasma from the process gas to deposit a material on the substrate. In one example, the circular gas flow pattern has circular geometry of a vortex, a helix, a spiral, or a derivative thereof. Materials that may be deposited by the method include ruthenium, tantalum, tantalum nitride, tungsten or tungsten nitride. Other embodiments of the invention provide an apparatus configured to form the material during the PE-ALD process.
摘要翻译：本发明的实施例提供了在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间在衬底上形成材料的方法。在一个实施例中，提供了一种方法，其包括使至少一个处理气体流过至少一个管道以形成圆形气体流动图案，将基底暴露于圆形气体流动图案，将至少一种化学前体顺序地脉动到工艺气体并且从工艺气体点燃等离子体以将材料沉积在衬底上。在一个示例中，圆形气体流动图案具有涡旋，螺旋，螺旋或其衍生物的圆形几何形状。可以通过该方法沉积的材料包括钌，钽，氮化钽，钨或氮化钨。本发明的其它实施例提供一种被配置为在PE-ALD过程期间形成材料的装置。

8. 发明授权

US07833358B2 Method of recovering valuable material from exhaust gas stream of a reaction chamber 有权
标题翻译：从反应室的废气流中回收有价物质的方法
公开(公告)号：US07833358B2
公开(公告)日：2010-11-16
申请号：US11400663
申请日：2006-04-07
申请人： Schubert S. Chu , Frederick C. Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
发明人： Schubert S. Chu , Frederick C. Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
IPC分类号： B08B7/00 , B08B9/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52 , Y02C20/30 , Y10S438/905
摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
摘要翻译：通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。结合钌浓度的等离子体阻抗的测量提供了室清洁度的精确指示。

9. 发明授权

US09032906B2 Apparatus and process for plasma-enhanced atomic layer deposition 有权
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US09032906B2
公开(公告)日：2015-05-19
申请号：US11873129
申请日：2007-10-16
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/50 , C23C16/455 , C23C16/18 , C23C16/509 , H01J37/32 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

10. 发明授权

US07850779B2 Apparatus and process for plasma-enhanced atomic layer deposition 失效
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US07850779B2
公开(公告)日：2010-12-14
申请号：US11556758
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/452 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道。在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

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