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1. 发明授权

US08999059B2 Process for producing a nitride single crystal and apparatus therefor 有权
标题翻译：氮化物单晶的制造方法及其装置
公开(公告)号：US08999059B2
公开(公告)日：2015-04-07
申请号：US12234786
申请日：2008-09-22
申请人： Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B9/12 , C30B35/00 , C30B9/00 , C30B29/40
CPC分类号： C30B9/00 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1096
摘要： A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.
摘要翻译：使用具有多个用于容纳溶液的坩埚的生长装置，用于加热坩埚的加热元件和用于至少容纳坩埚和加热元件并用于填充至少包含氮气的气氛的压力容器。在每个坩埚中放置一个籽晶以在籽晶上生长氮化物单晶。

2. 发明授权

US08486190B2 Process for producing single crystal 有权
标题翻译：单晶生产工艺
公开(公告)号：US08486190B2
公开(公告)日：2013-07-16
申请号：US12234799
申请日：2008-09-22
申请人： Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B9/04
CPC分类号： C30B29/403 , C30B9/00 , C30B29/406
摘要： A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.
摘要翻译：称量含有容易氧化的材料的原料混合物。将原料混合物熔化，然后在设置在非氧化性气氛中的反应容器1内固化，从而产生固化物19.反应容器1和固化物19在晶体生长中的非氧化性气氛中加热熔化固化物从而产生溶液的装置。从溶液中生长单晶。

3. 发明授权

US08361222B2 Method for producing group III nitride-based compound semiconductor 有权
标题翻译：制备III族氮化物基化合物半导体的方法
公开(公告)号：US08361222B2
公开(公告)日：2013-01-29
申请号：US12081943
申请日：2008-04-23
申请人： Shiro Yamazaki , Seiji Nagai , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Seiji Nagai , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B15/14 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12 , C30B29/406
摘要： In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 1A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG. 1B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG. 1C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG. 1D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.
摘要翻译：在通过助熔剂制造GaN的情况下，可以防止在GaN自立基板的氮面上沉积杂晶，原料的浪费。例示了四个坩埚和GaN自立衬底的布置。在图如图1A所示，自立基板的氮面与坩埚的倾斜的平坦的内壁紧密接触。在图如图1B所示，自立基板的氮面与坩埚的水平方向的平坦的内壁紧密接触，通过夹具固定基板。在图如图1C所示，在坩埚的平坦底部设置夹具，通过夹具固定两个GaN自立基板，使得基板的氮面彼此紧密接触。在图如图1D所示，在坩埚的平坦底部设置夹具，并且将GaN自立基板固定在夹具上，使得基板的氮面被夹具覆盖。将熔融的镓和钠的助熔剂混合物装入每个坩埚中，并且在加压氮气下在镓面上生长GaN单晶。

4. 发明授权

US07815733B2 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal 有权
标题翻译：生产六方氮化硼单晶和六方氮化硼单晶的方法
公开(公告)号：US07815733B2
公开(公告)日：2010-10-19
申请号：US11837557
申请日：2007-08-13
申请人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
发明人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
IPC分类号： C30B11/00 , C30B28/12
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12
摘要： A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.
摘要翻译：提供了生长六方氮化硼单晶的方法。六方氮化硼单晶通过在含氮气氛中加热或加热然后缓慢冷却氮化硼和钙系列材料而在氮化钙焊剂中生长。从而可以成功地生长大块六方氮化硼单晶。

5. 发明授权

US07754012B2 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
标题翻译：用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法
公开(公告)号：US07754012B2
公开(公告)日：2010-07-13
申请号：US12082745
申请日：2008-04-14
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B25/00 , C30B23/00 , C30B28/12 , C01B21/06
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.
摘要翻译：提供了高品质的III族氮化物晶体的制造方法。通过该方法，将晶体原料溶液和含氮气体引入加热的反应器容器中，并在施加压力的气氛中生长晶体。气体通过反应器容器的气体入口从气体供给装置引入反应器容器，然后通过反应器容器的气体出口被排出到耐压容器的内部。由于气体直接引入反应容器，因此可以防止附着在耐压容器等上的杂质进入晶体生长部位。此外，气体流过反应器容器，以抑制气体入口处的蒸发的碱金属等的聚集，并且减少金属蒸气进入气体供应装置的流动。

6. 发明申请

US20100012020A1 METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL 有权
标题翻译：制造硝酸单晶的方法
公开(公告)号：US20100012020A1
公开(公告)日：2010-01-21
申请号：US12556015
申请日：2009-09-09
申请人： Mikiya Ichimura , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Mikiya Ichimura , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： C30B9/00
CPC分类号： C30B29/406 , C30B19/02 , C30B19/062 , C30B19/08 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02625
摘要： A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.
摘要翻译：氮化物单晶在生长容器1中含有熔剂和单晶原料的熔融物中在籽晶衬底5上产生。生长容器1中的熔体2在水平方向上具有温度梯度。在通过助熔剂法生长氮化物单晶时，防止了将劣质晶体粘附到单晶上，使单晶的膜厚保持恒定。

7. 发明申请

US20090293805A1 Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal 有权
标题翻译：用于氮化镓单晶生长的熔体组成和用于生长氮化镓单晶的方法
公开(公告)号：US20090293805A1
公开(公告)日：2009-12-03
申请号：US12462429
申请日：2009-08-03
申请人： Makoto Iwai , Takanao Shimodaira , Yoshihiko Yamamura , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
发明人： Makoto Iwai , Takanao Shimodaira , Yoshihiko Yamamura , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
IPC分类号： C30B9/12 , C01B21/06
CPC分类号： C30B29/406 , C30B9/12
摘要： It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.
摘要翻译：提供一种通过助熔剂生长氮化镓单晶的熔融组合物。熔融组合物含有镓，钠和钡，相对于100摩尔％的钠，钡的含量为0.05〜0.3摩尔％。

8. 发明申请

US20090155580A1 Production Methods of Semiconductor Crystal and Semiconductor Substrate 审中-公开
标题翻译：半导体晶体和半导体基板的生产方法
公开(公告)号：US20090155580A1
公开(公告)日：2009-06-18
申请号：US12225389
申请日：2007-04-05
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/02 , B32B9/00 , B32B1/00
CPC分类号： C30B29/403 , C30B9/00 , H01L33/0075 , Y10T428/265 , Y10T428/266
摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.
摘要翻译：提供适合于制造电子器件或光学器件的高品质的半导体衬底。本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

9. 发明申请

US20090038539A1 PROCESS FOR PRODUCING SINGLE CRYSTAL 有权
标题翻译：生产单晶的方法
公开(公告)号：US20090038539A1
公开(公告)日：2009-02-12
申请号：US12234799
申请日：2008-09-22
申请人： Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B9/00
CPC分类号： C30B29/403 , C30B9/00 , C30B29/406
摘要： A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.
摘要翻译：称量含有容易氧化的材料的原料混合物。将原料混合物熔化，然后在设置在非氧化性气氛中的反应容器1内固化，从而产生固化物19.反应容器1和固化物19在晶体生长中的非氧化性气氛中加热熔化固化物从而产生溶液的装置。从溶液中生长单晶。

10. 发明申请

US20090000538A1 SINGLE CRYSTAL GROWING METHOD 有权
标题翻译：单晶生长方法
公开(公告)号：US20090000538A1
公开(公告)日：2009-01-01
申请号：US12190230
申请日：2008-08-12
申请人： Makoto Iwai , Takanao Shimodaira , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki , Koji Hirata
发明人： Makoto Iwai , Takanao Shimodaira , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki , Koji Hirata
IPC分类号： C30B17/00
CPC分类号： C30B29/406 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/063
摘要： In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.
摘要翻译：在通过在氮气和非氧化气氛下在容器内熔化原料而生长单晶的方法中，容器振荡，使熔融的原料与由熔融的原料不反应的固体的搅拌介质接触。

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