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1. 发明授权

US08481386B2 Nanocrystal memories and methods of forming the same 有权
标题翻译：纳米晶体记忆及其形成方法
公开(公告)号：US08481386B2
公开(公告)日：2013-07-09
申请号：US12757812
申请日：2010-04-09
申请人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
发明人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L29/42332 , H01L29/66825
摘要： In one embodiment, a memory device includes a substrate, a tunneling oxide, a silicide nanocrystal floating gate, and a control oxide. The tunneling oxide is positioned upon a first surface of the substrate, the silicide nanocrystal floating gate is positioned upon the tunneling oxide, and the control oxide positioned upon the nanocrystal floating gate.
摘要翻译：在一个实施例中，存储器件包括衬底，隧道氧化物，硅化物纳米晶体浮动栅极和控制氧化物。隧道氧化物位于衬底的第一表面上，硅化物纳米晶体浮栅位于隧道氧化物上，并且控制氧化物位于纳米晶体浮栅上。

2. 发明申请

US20100080256A1 HIGH PERFORMANCE ZnO-BASED LASER DIODES 有权
标题翻译：高性能ZnO基激光二极管
公开(公告)号：US20100080256A1
公开(公告)日：2010-04-01
申请号：US12570695
申请日：2009-09-30
申请人： Jianlin Liu , Sheng Chu
发明人： Jianlin Liu , Sheng Chu
IPC分类号： H01S5/34 , H01L33/00 , C30B25/02
CPC分类号： H01S5/347 , B82Y20/00 , H01S5/021 , H01S5/0213 , H01S5/0425 , H01S5/10
摘要： Systems and methods for electrically pumped, surface-emitting and edge emitting ZnO ultraviolet diode lasers are disclosed. The ZnO diode laser may be fabricated using growth processes (e.g., MBE) to form Sb-doped ZnO as a p-type layer and doped ZnO as an n-type layer. ZnO-based quantum well structures may be further formed in between the n- and p-type ZnO layers. The ZnO layers and quantum wells may be grown in columnar structures which act as resonant cavities for generated light, significantly improving light amplification and providing high power output. For example, ultraviolet lasing at around 380 nm was demonstrated at about room temperature at a threshold current density of about 10 A/cm2. The output power was further measured to be about 11.3 μW at about 130 mA driving current.
摘要翻译：公开了用于电泵浦，表面发射和边缘发射的ZnO紫外二极管激光器的系统和方法。可以使用生长工艺（例如MBE）来制造ZnO二极管激光器，以形成掺杂Sb的ZnO作为p型层，并掺杂ZnO作为n型层。可以在n型和p型ZnO层之间进一步形成ZnO基量子阱结构。 ZnO层和量子阱可以生长成用作产生光的谐振腔的柱状结构，显着改善光放大并提供高功率输出。例如，在大约室温下，在约10A / cm 2的阈值电流密度下，证明了约380nm的紫外线激光。在大约130mA驱动电流下，进一步测量输出功率约为11.3μW。

3. 发明授权

US08306083B2 High performance ZnO-based laser diodes 有权
标题翻译：高性能ZnO基激光二极管
公开(公告)号：US08306083B2
公开(公告)日：2012-11-06
申请号：US12570695
申请日：2009-09-30
申请人： Jianlin Liu , Sheng Chu
发明人： Jianlin Liu , Sheng Chu
IPC分类号： H01S5/00
CPC分类号： H01S5/347 , B82Y20/00 , H01S5/021 , H01S5/0213 , H01S5/0425 , H01S5/10
摘要： Systems and methods for electrically pumped, surface-emitting and edge emitting ZnO ultraviolet diode lasers are disclosed. The ZnO diode laser may be fabricated using growth processes (e.g., MBE) to form Sb-doped ZnO as a p-type layer and doped ZnO as an n-type layer. ZnO-based quantum well structures may be further formed in between the n- and p-type ZnO layers. The ZnO layers and quantum wells may be grown in columnar structures which act as resonant cavities for generated light, significantly improving light amplification and providing high power output. For example, ultraviolet lasing at around 380 nm was demonstrated at about room temperature at a threshold current density of about 10 A/cm2. The output power was further measured to be about 11.3 μW at about 130 mA driving current.
摘要翻译：公开了用于电泵浦，表面发射和边缘发射的ZnO紫外二极管激光器的系统和方法。可以使用生长工艺（例如MBE）来制造ZnO二极管激光器，以形成掺杂Sb的ZnO作为p型层，并掺杂ZnO作为n型层。可以在n型和p型ZnO层之间进一步形成ZnO基量子阱结构。 ZnO层和量子阱可以生长成用作产生光的谐振腔的柱状结构，显着改善光放大并提供高功率输出。例如，在大约室温下，在约10A / cm 2的阈值电流密度下，证明了约380nm的紫外线激光。在大约130mA驱动电流下，进一步测量输出功率约为11.3μW。

4. 发明授权

US06995076B2 Relaxed SiGe films by surfactant mediation 有权
标题翻译：通过表面活性剂调解轻松SiGe薄膜
公开(公告)号：US06995076B2
公开(公告)日：2006-02-07
申请号：US09947774
申请日：2001-09-05
申请人： Kang L. Wang , Jianlin Liu
发明人： Kang L. Wang , Jianlin Liu
IPC分类号： H01L21/205
CPC分类号： C30B23/02 , C23C14/025 , C30B29/08 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02491 , H01L21/02499 , H01L21/02502 , H01L21/0251 , H01L21/02532
摘要： A metallic surfactant, e.g., Sb, Bi, As, or atomic hydrogen is used to grow a high quality, relaxed, relatively thin SiGe buffer having a very smooth surface and a very low threading dislocation density, on which high-quality films are epitaxially grown for various applications.
摘要翻译：使用金属表面活性剂，例如Sb，Bi，As或原子氢来生长具有非常光滑的表面和非常低的穿透位错密度的高质量，松弛的相对薄的SiGe缓冲液，其上高质量的膜是外延的种植用于各种应用。

5. 发明申请

US20100258851A1 NANOCRYSTAL MEMORIES AND METHODS OF FORMING THE SAME 有权
标题翻译：纳米晶体记忆及其形成方法
公开(公告)号：US20100258851A1
公开(公告)日：2010-10-14
申请号：US12757812
申请日：2010-04-09
申请人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
发明人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/7881 , H01L21/28273 , H01L29/42332 , H01L29/66825
摘要： Nanocrystal memories and methods of making the same are disclosed. In one embodiment, a memory device comprises a substrate, a tunneling oxide, a silicide nanocrystal floating gate, and a control oxide. The tunneling oxide is positioned upon a first surface of the substrate, the silicide nanocrystal floating gate is positioned upon the tunneling oxide, and the control oxide positioned upon the nanocrystal floating gate.
摘要翻译：公开了纳米晶体存储器及其制造方法。在一个实施例中，存储器件包括衬底，隧道氧化物，硅化物纳米晶体浮动栅极和控制氧化物。隧道氧化物位于衬底的第一表面上，硅化物纳米晶体浮栅位于隧道氧化物上，并且控制氧化物位于纳米晶体浮栅上。

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