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1. 发明申请

US20100258851A1 NANOCRYSTAL MEMORIES AND METHODS OF FORMING THE SAME 有权
标题翻译：纳米晶体记忆及其形成方法
公开(公告)号：US20100258851A1
公开(公告)日：2010-10-14
申请号：US12757812
申请日：2010-04-09
申请人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
发明人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/7881 , H01L21/28273 , H01L29/42332 , H01L29/66825
摘要： Nanocrystal memories and methods of making the same are disclosed. In one embodiment, a memory device comprises a substrate, a tunneling oxide, a silicide nanocrystal floating gate, and a control oxide. The tunneling oxide is positioned upon a first surface of the substrate, the silicide nanocrystal floating gate is positioned upon the tunneling oxide, and the control oxide positioned upon the nanocrystal floating gate.
摘要翻译：公开了纳米晶体存储器及其制造方法。在一个实施例中，存储器件包括衬底，隧道氧化物，硅化物纳米晶体浮动栅极和控制氧化物。隧道氧化物位于衬底的第一表面上，硅化物纳米晶体浮栅位于隧道氧化物上，并且控制氧化物位于纳米晶体浮栅上。

2. 发明授权

US08481386B2 Nanocrystal memories and methods of forming the same 有权
标题翻译：纳米晶体记忆及其形成方法
公开(公告)号：US08481386B2
公开(公告)日：2013-07-09
申请号：US12757812
申请日：2010-04-09
申请人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
发明人： Jianlin Liu , Dengtao Zhao , Yan Zhu , Ruigang Li , Bei Li
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L29/42332 , H01L29/66825
摘要： In one embodiment, a memory device includes a substrate, a tunneling oxide, a silicide nanocrystal floating gate, and a control oxide. The tunneling oxide is positioned upon a first surface of the substrate, the silicide nanocrystal floating gate is positioned upon the tunneling oxide, and the control oxide positioned upon the nanocrystal floating gate.
摘要翻译：在一个实施例中，存储器件包括衬底，隧道氧化物，硅化物纳米晶体浮动栅极和控制氧化物。隧道氧化物位于衬底的第一表面上，硅化物纳米晶体浮栅位于隧道氧化物上，并且控制氧化物位于纳米晶体浮栅上。

3. 发明授权

US08983365B2 Systems and methods for communicating and rendering electronic program guide information via digital radio broadcast transmission 有权
公开(公告)号：US08983365B2
公开(公告)日：2015-03-17
申请号：US12003323
申请日：2007-12-21
申请人： Armond R. Capparelli , Joseph F. D'Angelo , Joseph P. Haggerty , Steven A. Johnson , Bei Li , Lia Meller , Marek Milbar , Jordan Scott , Chinmay M. Shah , Kun Wang , Girish K. Warrier , Christopher R. Gould
发明人： Armond R. Capparelli , Joseph F. D'Angelo , Joseph P. Haggerty , Steven A. Johnson , Bei Li , Lia Meller , Marek Milbar , Jordan Scott , Chinmay M. Shah , Kun Wang , Girish K. Warrier , Christopher R. Gould
IPC分类号： H04H40/00 , H04H60/06 , H04H60/07 , H04H60/72 , H04H20/16
CPC分类号： H04H60/06 , H04H20/16 , H04H60/07 , H04H60/72 , H04H2201/183 , H04H2201/186
摘要： Methods and systems for preparing data for broadcast via digital radio broadcast transmission is disclosed comprising the steps of receiving a plurality of content files corresponding to programming information for program content to be broadcast; receiving an index file having a pointer for each of the plurality of content files, wherein the index file is associated with a first logical address; storing the index file and the plurality of content files; scheduling a broadcast rotation of the index file and the plurality of content files (wherein the index file is scheduled for repeated transmission intermittently relative to selected ones of the content files); and transmitting the index file and the plurality of content files to an importer in accordance with the broadcast rotation.

4. 发明授权

US08389514B2 Cyanoaminoquinolones and tetrazoloaminoquinolones as GSK-3 inhibitors 有权
标题翻译：氰基氨基喹诺酮和四唑氨基喹诺酮作为GSK-3抑制剂
公开(公告)号：US08389514B2
公开(公告)日：2013-03-05
申请号：US12677789
申请日：2008-09-11
申请人： Bei Li , Anna Katrin Szardenings
发明人： Bei Li , Anna Katrin Szardenings
IPC分类号： C07D498/06 , A61K31/5383
CPC分类号： C07D498/06
摘要： Provided herein are aminoquinolones and pharmaceutically acceptable derivatives thereof. In certain embodiments, provided herein are compounds, compositions and methods for treating, preventing or ameliorating GSK-3 mediated diseases.
摘要翻译：本文提供氨基喹诺酮及其药学上可接受的衍生物。在某些实施方案中，本文提供了用于治疗，预防或改善GSK-3介导的疾病的化合物，组合物和方法。

5. 发明申请

US20070185061A1 HETEROCYCLIC BORONIC ACID COMPOUNDS 审中-公开
标题翻译：杂环硼酸化合物
公开(公告)号：US20070185061A1
公开(公告)日：2007-08-09
申请号：US11556944
申请日：2006-11-06
申请人： David Campbell , David Winn , Juan Betancort , Kevin Shreder , Yi Hu , Bei Li , Melissa Wong , Lifu Ma , William Ripka , Min Wu
发明人： David Campbell , David Winn , Juan Betancort , Kevin Shreder , Yi Hu , Bei Li , Melissa Wong , Lifu Ma , William Ripka , Min Wu
IPC分类号： A61K31/69 , C07F5/02
CPC分类号： C07F5/025
摘要： Dipeptidyl peptidase IV (DPP-IV)-inhibiting compounds are provided that have formula I: wherein n is 1 to 3; X is CH2; S; O; CF2 or C(CH3)2; Z is H; halogen; hydroxyl; (C1-6)alkoxy; (C1-12)alkyl; (C3-12)cycloalkyl; phenyl; or heteroaryl; where the phenyl and heteroaryl groups are optionally mono- or independently plurisubstituted with R7; optionally, X together with an adjacent ring carbon and Z form a fused cyclopropyl; and optionally, one of the bonds in the ring containing X is a double bond; and CRiRii, R1, R2, R3, R4 and R5 are as described herein.
摘要翻译：提供二肽基肽酶IV（DPP-IV）抑制化合物，其具有式I：其中n为1至3; X是CH 2 2; S; O; CF 2或C（CH 3）2）2。 Z是H; 卤素; 羟; （C 1-6）烷氧基; （C 1-12）烷基; （C 3-12）环烷基; 苯基; 或杂芳基; 其中苯基和杂芳基任选被R 7独立或独立地取代; 任选地，X与相邻的环碳一起形成稠合的环丙基; 并且任选地，含有X的环中的一个键是双键; 和R 1，R 2，R 2，R 3，R 3， R 4和R 5如本文所述。

6. 发明授权

US08664014B2 High productivity combinatorial workflow for photoresist strip applications 失效
标题翻译：用于光刻胶剥离应用的高生产率组合工作流程
公开(公告)号：US08664014B2
公开(公告)日：2014-03-04
申请号：US13298524
申请日：2011-11-17
申请人： Bei Li , Sean Barstow , Anh Duong , Zhendong Hong , Ashley Lacey
发明人： Bei Li , Sean Barstow , Anh Duong , Zhendong Hong , Ashley Lacey
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/14 , G03F7/422 , H01L22/20
摘要： Electrical testing of metal oxide semiconductor (MOS) high-k capacitor structures is used to evaluate photoresist strip or cleaning chemicals using a combinatorial workflow. The electrical testing can be able to identify the damages on the high-k dielectrics, permitting a selection of photoresist strip chemicals to optimize the process conditions in the fabrication of semiconductor devices. The high productivity combinatorial technique can provide a compatibility evaluation of photoresist strip chemicals with high-k devices.
摘要翻译：金属氧化物半导体（MOS）高k电容器结构的电气测试用于使用组合工作流程来评估光致抗蚀剂条或清洁化学品。电气测试能够识别高k电介质上的损伤，允许选择光致抗蚀剂胶带化学品来优化半导体器件制造过程中的工艺条件。高生产率组合技术可以提供具有高k器件的光致抗蚀剂剥离化学品的兼容性评估。

7. 发明申请

US20130122671A1 PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS 有权
标题翻译：去除NiPtSi应用的Ni和Pt残留物的工艺
公开(公告)号：US20130122671A1
公开(公告)日：2013-05-16
申请号：US13296444
申请日：2011-11-15
申请人： Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
发明人： Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L21/02068 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
摘要翻译：本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。本发明的实施方案提供了一种多步骤清洗方法，包括在第一次退火之后将基底暴露于硝酸溶液，然后在第二次退火之后暴露于王水溶液中。可以将底物任选地暴露于盐酸溶液中以完全除去任何剩余的铂残余物。

8. 发明授权

US07099518B2 Measurement of blurring in video sequences 有权
标题翻译：视频序列模糊测量
公开(公告)号：US07099518B2
公开(公告)日：2006-08-29
申请号：US10198944
申请日：2002-07-18
申请人： Bei Li , Wilfried M. Osberger
发明人： Bei Li , Wilfried M. Osberger
IPC分类号： G06K9/40 , G06K9/48
CPC分类号： H04N17/00 , H04N5/208 , H04N5/21 , H04N17/004
摘要： A method for determine blurring in a test video sequence due to video processing includes detecting blocks within each frame of the test video sequence that have valid image edges. An edge point within each valid image edge block is selected and a series of points defining an edge profile in the block along a line normal to the valid image edge at each edge point is defined from an enhanced edge map in which video processing blockiness artifacts have been removed. From the edge profile a blurring value is estimated for each frame or group of frames within the test video sequence. Additionally a reference blurring value may be derived from a reference video sequence corresponding to the test video sequence, which reference blurring value may be generated at a source of the reference video sequence and transmitted with the test video sequence to a receiver or may be generated at the receiver. The reference blurring value is then compared with the blurring value from the test video sequence to produce a relative blurring value for the test video sequence.
摘要翻译：由于视频处理，用于确定测试视频序列中的模糊的方法包括检测具有有效图像边缘的测试视频序列的每帧内的块。选择每个有效图像边缘块内的边缘点，并且沿着沿着垂直于每个边缘点处的有效图像边缘的线的块在块中定义边缘轮廓的一系列点从其中视频处理块状伪影具有的增强边缘图定义已被删除从边缘轮廓中，针对测试视频序列内的每个帧或一组帧估计模糊值。另外，可以从对应于测试视频序列的参考视频序列导出参考模糊值，该参考模糊值可以在参考视频序列的源处生成并且与测试视频序列一起发送到接收机，或者可以在收件人。然后将参考模糊值与来自测试视频序列的模糊值进行比较，以产生测试视频序列的相对模糊值。

9. 发明授权

US08854067B2 Circular transmission line methods compatible with combinatorial processing of semiconductors 有权
标题翻译：圆形传输线方法兼容半导体的组合处理
公开(公告)号：US08854067B2
公开(公告)日：2014-10-07
申请号：US13594292
申请日：2012-08-24
申请人： Amol Joshi , Charlene Chen , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Dipankar Pramanik , Usha Raghuram , Mark Victor Raymond , Jingang Su , Bin Yang
发明人： Amol Joshi , Charlene Chen , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Dipankar Pramanik , Usha Raghuram , Mark Victor Raymond , Jingang Su , Bin Yang
IPC分类号： G01R27/08 , G01R31/28
CPC分类号： G01R27/08 , G01R31/2831 , H01L22/14 , H01L22/20
摘要： Methods and structures are described for determining contact resistivities and Schottky barrier heights for conductors deposited on semiconductor wafers that can be combined with combinatorial processing, allowing thereby numerous processing conditions and materials to be tested concurrently. Methods for using multi-ring as well as single-ring CTLM structures to cancel parasitic resistance are also described, as well as structures and processes for inline monitoring of properties.
摘要翻译：描述了用于确定沉积在可与组合处理组合的半导体晶片上的导体的接触电阻率和肖特基势垒高度的方法和结构，从而允许同时测试许多处理条件和材料。还描述了使用多环以及单环CTLM结构来消除寄生电阻的方法，以及用于在线监测性质的结构和方法。

10. 发明申请

US20130316472A1 HIGH PRODUCTIVITY COMBINATORIAL OXIDE TERRACING AND PVD/ALD METAL DEPOSITION COMBINED WITH LITHOGRAPHY FOR GATE WORK FUNCTION EXTRACTION 有权
标题翻译：高生产率组合氧化物触媒和PVD / ALD金属沉积与门式工作功能提取相结合
公开(公告)号：US20130316472A1
公开(公告)日：2013-11-28
申请号：US13480023
申请日：2012-05-24
申请人： Amol Joshi , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Usha Raghuram
发明人： Amol Joshi , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Usha Raghuram
IPC分类号： H01L21/66
CPC分类号： H01L29/66181 , G01N27/002 , H01L22/14 , H01L22/20
摘要： Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.
摘要翻译：使用光刻图案化的金属栅极高k电容器结构使用组合工作流程提取门功函数。氧化物梯田，以及用于金属沉积的高生产率组合工艺流程可为高性能逻辑晶体管提供最佳的高k栅介质和金属栅极解决方案。高生产率组合技术可以为PMOS和NMOS晶体管的给定高k介质金属栅极叠层提供有效的工作函数的评估，这对于识别和选择正确的材料至关重要。

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