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1. 发明授权

US09299767B1 Source-channel interaction in 3D circuit 有权
标题翻译： 3D电路中的源通道交互
公开(公告)号：US09299767B1
公开(公告)日：2016-03-29
申请号：US14498640
申请日：2014-09-26
申请人： John Mark Meldrim , Yushi Hu , Yongjun Jeff Hu , Everett Allen McTeer
发明人： John Mark Meldrim , Yushi Hu , Yongjun Jeff Hu , Everett Allen McTeer
IPC分类号： H01L29/04 , H01L27/115 , H01L27/105
CPC分类号： H01L27/0688 , H01L29/7827
摘要： A multilayer source provides charge carriers to a multitier channel connector. The source includes a metal silicide layer on a substrate and a metal nitride layer between the metal silicide layer and the channel. The metal silicide and the metal nitride are processed without an intervening oxide layer between them. In one embodiment, the source further includes a silicon layer between the metal nitride layer and the channel. The silicon layer can also be processed without an intervening oxide layer. Thus, the source does not have an intervening oxide layer from the substrate to the channel.
摘要翻译：多层光源将电荷载体提供给多层通道连接器。源包括衬底上的金属硅化物层和金属硅化物层和沟道之间的金属氮化物层。金属硅化物和金属氮化物在它们之间没有中间的氧化物层被加工。在一个实施例中，源还包括在金属氮化物层和沟道之间的硅层。硅层也可以在没有中间氧化物层的情况下被加工。因此，源不具有从衬底到通道的中间氧化物层。

2. 发明授权

US08093129B2 Methods of forming memory cells 有权
标题翻译：形成记忆细胞的方法
公开(公告)号：US08093129B2
公开(公告)日：2012-01-10
申请号：US12365037
申请日：2009-02-03
申请人： John Mark Meldrim
发明人： John Mark Meldrim
IPC分类号： H01L21/28 , H01L29/792
CPC分类号： H01L29/42332 , B82Y10/00 , C23C14/06 , C23C14/0688 , H01L21/28273 , H01L29/7881
摘要： Some embodiments include methods of forming memory cells. A semiconductor construction may be provided, with such construction including tunnel dielectric material over a semiconductor substrate. The construction may be placed within a chamber. While the construction is within the chamber, a plurality of charge-trapping centers may be dispersed over the tunnel dielectric material. The charge-trapping centers may be nanoclusters formed by sputter-depositing metallic nanoparticles into an aggregation chamber, and then aggregating groups of the nanoparticles into the nanoclusters. Also while the construction is within the chamber, electrically insulative material may be formed over and between the charge-trapping centers. Control gate material may then be formed over the electrically insulative material.
摘要翻译：一些实施例包括形成存储器单元的方法。可以提供半导体结构，其结构包括在半导体衬底上的隧道电介质材料。该结构可以放置在室内。当结构在室内时，多个电荷捕获中心可以分散在隧道介电材料上。电荷捕获中心可以是通过将金属纳米颗粒溅射沉积到聚集室中形成的纳米团簇，然后将纳米颗粒团聚集成纳米团簇。此外，当构造在室内时，可以在电荷捕获中心之间和之间形成电绝缘材料。然后可以在电绝缘材料上形成控制栅极材料。

3. 发明授权

US09076888B2 Silicided recessed silicon 有权
公开(公告)号：US09076888B2
公开(公告)日：2015-07-07
申请号：US11614802
申请日：2006-12-21
申请人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
发明人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/8238 , H01L21/28 , H01L21/8234 , H01L27/108 , H01L29/49 , H01L29/66
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823418 , H01L21/823443 , H01L21/823814 , H01L27/10852 , H01L27/10876 , H01L27/10897 , H01L29/4975 , H01L29/66621 , H01L2924/0002 , H01L2924/00
摘要： Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.

4. 发明申请

US20110291147A1 OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES 审中-公开
标题翻译：用于半导体结构的OHMIC联系
公开(公告)号：US20110291147A1
公开(公告)日：2011-12-01
申请号：US12787211
申请日：2010-05-25
申请人： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
发明人： Yongjun Jeff Hu , John Mark Meldrim , Shanming Mou , Everett Allen McTeer
IPC分类号： H01L33/62 , H01B1/02 , C01B21/00 , B32B15/00 , H01L21/26 , H01L21/30
CPC分类号： H01L33/62 , H01L33/0066 , H01L33/0075 , H01L33/32 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
摘要翻译：提供了一种在半导体结构上形成欧姆接触的组合物和方法。该组合物包括与半导体结构至少部分邻接的TiAl x N y材料。 TiAlxNy材料可以是TiAl3。组合物可以包括铝材料，铝材料与TiAl x N y材料的至少一部分相邻，使得TiAl x N y材料在铝材料和半导体结构之间。该方法包括退火组合物以在半导体结构上形成欧姆接触。

5. 发明授权

US07977236B2 Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit 有权
标题翻译：形成凹陷式存取器件的晶体管栅极的方法，形成凹陷晶体管栅极和非凹槽晶体管栅极的方法以及制造集成电路的方法
公开(公告)号：US07977236B2
公开(公告)日：2011-07-12
申请号：US12476364
申请日：2009-06-02
申请人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
发明人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
IPC分类号： H01L21/4763
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823418 , H01L21/823443 , H01L21/823814 , H01L27/10852 , H01L27/10876 , H01L27/10897 , H01L29/4975 , H01L29/66621 , H01L2924/0002 , H01L2924/00
摘要： Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
摘要翻译：为嵌入硅完全硅化提供了方法和结构。在沟槽内提供硅。在硅上提供了一种金属混合物，其中一种金属在硅中比硅中更容易扩散到金属中，而另一种金属在硅中比在金属中的硅更容易扩散。示例性的混合物包括80％的镍和20％的钴。尽管沟槽的纵横比相对较高，但沟槽内的硅可以完全无硅化物形成。在其他设备中，可以通过用于存储器阵列的方法形成凹陷接入设备（RAD）。

6. 发明申请

US20100197095A1 Methods Of Forming Memory Cells 有权
标题翻译：形成记忆细胞的方法
公开(公告)号：US20100197095A1
公开(公告)日：2010-08-05
申请号：US12365037
申请日：2009-02-03
申请人： John Mark Meldrim
发明人： John Mark Meldrim
IPC分类号： H01L21/336
CPC分类号： H01L29/42332 , B82Y10/00 , C23C14/06 , C23C14/0688 , H01L21/28273 , H01L29/7881
摘要： Some embodiments include methods of forming memory cells. A semiconductor construction may be provided, with such construction including tunnel dielectric material over a semiconductor substrate. The construction may be placed within a chamber. While the construction is within the chamber, a plurality of charge-trapping centers may be dispersed over the tunnel dielectric material. The charge-trapping centers may be nanoclusters formed by sputter-depositing metallic nanoparticles into an aggregation chamber, and then aggregating groups of the nanoparticles into the nanoclusters. Also while the construction is within the chamber, electrically insulative material may be formed over and between the charge-trapping centers. Control gate material may then be formed over the electrically insulative material.
摘要翻译：一些实施例包括形成存储器单元的方法。可以提供半导体结构，其结构包括在半导体衬底上的隧道电介质材料。该结构可以放置在室内。当结构在室内时，多个电荷捕获中心可以分散在隧道介电材料上。电荷捕获中心可以是通过将金属纳米颗粒溅射沉积到聚集室中形成的纳米团簇，然后将纳米颗粒团聚集成纳米团簇。此外，当构造在室内时，可以在电荷捕获中心之间和之间形成电绝缘材料。然后可以在电绝缘材料上形成控制栅极材料。

7. 发明申请

US20160093688A1 SOURCE-CHANNEL INTERACTION IN 3D CIRCUIT 有权
标题翻译：三维电路中的源 - 通道交互
公开(公告)号：US20160093688A1
公开(公告)日：2016-03-31
申请号：US14498640
申请日：2014-09-26
申请人： John Mark Meldrim , Yushi Hu , Yongjun Jeff Hu , Everett Allen McTeer
发明人： John Mark Meldrim , Yushi Hu , Yongjun Jeff Hu , Everett Allen McTeer
IPC分类号： H01L29/04 , H01L27/105
CPC分类号： H01L27/0688 , H01L29/7827
摘要： A multilayer source provides charge carriers to a multitier channel connector. The source includes a metal silicide layer on a substrate and a metal nitride layer between the metal silicide layer and the channel. The metal silicide and the metal nitride are processed without an intervening oxide layer between them. In one embodiment, the source further includes a silicon layer between the metal nitride layer and the channel. The silicon layer can also be processed without an intervening oxide layer. Thus, the source does not have an intervening oxide layer from the substrate to the channel.
摘要翻译：多层光源将电荷载体提供给多层通道连接器。源包括衬底上的金属硅化物层和金属硅化物层和沟道之间的金属氮化物层。金属硅化物和金属氮化物在它们之间没有中间的氧化物层被加工。在一个实施例中，源还包括在金属氮化物层和沟道之间的硅层。硅层也可以在没有中间氧化物层的情况下被加工。因此，源不具有从衬底到通道的中间氧化物层。

8. 发明授权

US08728930B2 Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts 有权
标题翻译：形成含金属硅化物的材料的方法和形成含金属硅化物的触点的方法
公开(公告)号：US08728930B2
公开(公告)日：2014-05-20
申请号：US13174466
申请日：2011-06-30
申请人： David H. Wells , John Mark Meldrim , Rita J. Klein
发明人： David H. Wells , John Mark Meldrim , Rita J. Klein
IPC分类号： H01L21/4763
CPC分类号： H01L21/28097 , H01L21/283 , H01L21/28518 , H01L21/32134 , H01L21/32139
摘要： A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.
摘要翻译：一种形成含金属硅化物的材料的方法包括形成衬底，该衬底包括具有超过硅的第一金属上的第二金属的第一堆叠和在硅上的第二金属的第二叠层。第一和第二种金属具有不同的组成。基板经受使第二金属与第二堆叠中的硅反应以形成来自第二堆叠的含金属硅化物的材料的条件。第一堆叠中的第二金属和硅之间的第一金属阻止从第一堆叠形成包括第二金属和硅的硅化物。在形成含金属硅化物的材料之后，对第一金属，第二金属和含金属硅化物的材料进行蚀刻化学，从而选择性地相对于金属硅化物从衬底中蚀刻至少一些剩余的第一和第二金属令人惊奇的材料。

9. 发明申请

US20130005136A1 Methods Of Forming Metal Silicide-Comprising Material And Methods Of Forming Metal Silicide-Comprising Contacts 有权
标题翻译：形成金属硅化物的方法及其形成金属硅化物的方法
公开(公告)号：US20130005136A1
公开(公告)日：2013-01-03
申请号：US13174466
申请日：2011-06-30
申请人： David H. Wells , John Mark Meldrim , Rita J. Klein
发明人： David H. Wells , John Mark Meldrim , Rita J. Klein
IPC分类号： H01L21/768
CPC分类号： H01L21/28097 , H01L21/283 , H01L21/28518 , H01L21/32134 , H01L21/32139
摘要： A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.
摘要翻译：一种形成含金属硅化物的材料的方法包括形成衬底，该衬底包括具有超过硅的第一金属上的第二金属的第一堆叠和在硅上的第二金属的第二叠层。第一和第二种金属具有不同的组成。基板经受使第二金属与第二堆叠中的硅反应以形成来自第二堆叠的含金属硅化物的材料的条件。第一堆叠中的第二金属和硅之间的第一金属阻止从第一堆叠形成包括第二金属和硅的硅化物。在形成含金属硅化物的材料之后，对第一金属，第二金属和含金属硅化物的材料进行蚀刻化学，从而选择性地相对于金属硅化物从衬底中蚀刻至少一些剩余的第一和第二金属令人惊奇的材料。

10. 发明申请

US20090239366A1 Method Of Forming A Transistor Gate Of A Recessed Access Device, Method Of Forming A Recessed Transistor Gate And A Non-Recessed Transistor Gate, And Method Of Fabricating An Integrated Circuit 有权
标题翻译：形成嵌入式接入装置的晶体管栅极的方法，形成嵌入式晶体管栅极和非嵌入晶体管栅极的方法以及制造集成电路的方法
公开(公告)号：US20090239366A1
公开(公告)日：2009-09-24
申请号：US12476364
申请日：2009-06-02
申请人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
发明人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823418 , H01L21/823443 , H01L21/823814 , H01L27/10852 , H01L27/10876 , H01L27/10897 , H01L29/4975 , H01L29/66621 , H01L2924/0002 , H01L2924/00
摘要： Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
摘要翻译：为嵌入硅完全硅化提供了方法和结构。在沟槽内提供硅。在硅上提供了一种金属混合物，其中一种金属在硅中比硅中更容易扩散到金属中，而另一种金属在硅中比在金属中的硅更容易扩散。示例性的混合物包括80％的镍和20％的钴。尽管沟槽的纵横比相对较高，但沟槽内的硅可以完全无硅化物形成。在其他设备中，可以通过用于存储器阵列的方法形成凹陷接入设备（RAD）。

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