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    • 2. 发明授权
    • Methods of forming memory cells
    • 形成记忆细胞的方法
    • US08093129B2
    • 2012-01-10
    • US12365037
    • 2009-02-03
    • John Mark Meldrim
    • John Mark Meldrim
    • H01L21/28H01L29/792
    • H01L29/42332B82Y10/00C23C14/06C23C14/0688H01L21/28273H01L29/7881
    • Some embodiments include methods of forming memory cells. A semiconductor construction may be provided, with such construction including tunnel dielectric material over a semiconductor substrate. The construction may be placed within a chamber. While the construction is within the chamber, a plurality of charge-trapping centers may be dispersed over the tunnel dielectric material. The charge-trapping centers may be nanoclusters formed by sputter-depositing metallic nanoparticles into an aggregation chamber, and then aggregating groups of the nanoparticles into the nanoclusters. Also while the construction is within the chamber, electrically insulative material may be formed over and between the charge-trapping centers. Control gate material may then be formed over the electrically insulative material.
    • 一些实施例包括形成存储器单元的方法。 可以提供半导体结构,其结构包括在半导体衬底上的隧道电介质材料。 该结构可以放置在室内。 当结构在室内时,多个电荷捕获中心可以分散在隧道介电材料上。 电荷捕获中心可以是通过将金属纳米颗粒溅射沉积到聚集室中形成的纳米团簇,然后将纳米颗粒团聚集成纳米团簇。 此外,当构造在室内时,可以在电荷捕获中心之间和之间形成电绝缘材料。 然后可以在电绝缘材料上形成控制栅极材料。
    • 6. 发明申请
    • Methods Of Forming Memory Cells
    • 形成记忆细胞的方法
    • US20100197095A1
    • 2010-08-05
    • US12365037
    • 2009-02-03
    • John Mark Meldrim
    • John Mark Meldrim
    • H01L21/336
    • H01L29/42332B82Y10/00C23C14/06C23C14/0688H01L21/28273H01L29/7881
    • Some embodiments include methods of forming memory cells. A semiconductor construction may be provided, with such construction including tunnel dielectric material over a semiconductor substrate. The construction may be placed within a chamber. While the construction is within the chamber, a plurality of charge-trapping centers may be dispersed over the tunnel dielectric material. The charge-trapping centers may be nanoclusters formed by sputter-depositing metallic nanoparticles into an aggregation chamber, and then aggregating groups of the nanoparticles into the nanoclusters. Also while the construction is within the chamber, electrically insulative material may be formed over and between the charge-trapping centers. Control gate material may then be formed over the electrically insulative material.
    • 一些实施例包括形成存储器单元的方法。 可以提供半导体结构,其结构包括在半导体衬底上的隧道电介质材料。 该结构可以放置在室内。 当结构在室内时,多个电荷捕获中心可以分散在隧道介电材料上。 电荷捕获中心可以是通过将金属纳米颗粒溅射沉积到聚集室中形成的纳米团簇,然后将纳米颗粒团聚集成纳米团簇。 此外,当构造在室内时,可以在电荷捕获中心之间和之间形成电绝缘材料。 然后可以在电绝缘材料上形成控制栅极材料。
    • 8. 发明授权
    • Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts
    • 形成含金属硅化物的材料的方法和形成含金属硅化物的触点的方法
    • US08728930B2
    • 2014-05-20
    • US13174466
    • 2011-06-30
    • David H. WellsJohn Mark MeldrimRita J. Klein
    • David H. WellsJohn Mark MeldrimRita J. Klein
    • H01L21/4763
    • H01L21/28097H01L21/283H01L21/28518H01L21/32134H01L21/32139
    • A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.
    • 一种形成含金属硅化物的材料的方法包括形成衬底,该衬底包括具有超过硅的第一金属上的第二金属的第一堆叠和在硅上的第二金属的第二叠层。 第一和第二种金属具有不同的组成。 基板经受使第二金属与第二堆叠中的硅反应以形成来自第二堆叠的含金属硅化物的材料的条件。 第一堆叠中的第二金属和硅之间的第一金属阻止从第一堆叠形成包括第二金属和硅的硅化物。 在形成含金属硅化物的材料之后,对第一金属,第二金属和含金属硅化物的材料进行蚀刻化学,从而选择性地相对于金属硅化物从衬底中蚀刻至少一些剩余的第一和第二金属 令人惊奇的材料。
    • 9. 发明申请
    • Methods Of Forming Metal Silicide-Comprising Material And Methods Of Forming Metal Silicide-Comprising Contacts
    • 形成金属硅化物的方法及其形成金属硅化物的方法
    • US20130005136A1
    • 2013-01-03
    • US13174466
    • 2011-06-30
    • David H. WellsJohn Mark MeldrimRita J. Klein
    • David H. WellsJohn Mark MeldrimRita J. Klein
    • H01L21/768
    • H01L21/28097H01L21/283H01L21/28518H01L21/32134H01L21/32139
    • A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.
    • 一种形成含金属硅化物的材料的方法包括形成衬底,该衬底包括具有超过硅的第一金属上的第二金属的第一堆叠和在硅上的第二金属的第二叠层。 第一和第二种金属具有不同的组成。 基板经受使第二金属与第二堆叠中的硅反应以形成来自第二堆叠的含金属硅化物的材料的条件。 第一堆叠中的第二金属和硅之间的第一金属阻止从第一堆叠形成包括第二金属和硅的硅化物。 在形成含金属硅化物的材料之后,对第一金属,第二金属和含金属硅化物的材料进行蚀刻化学,从而选择性地相对于金属硅化物从衬底中蚀刻至少一些剩余的第一和第二金属 令人惊奇的材料。