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1. 发明授权

US08814239B2 Techniques for handling media arrays 有权
标题翻译：处理媒体阵列的技术
公开(公告)号：US08814239B2
公开(公告)日：2014-08-26
申请号：US13397441
申请日：2012-02-15
申请人： Paul Forderhase , Julian Blake , William Weaver
发明人： Paul Forderhase , Julian Blake , William Weaver
IPC分类号： H01L21/683 , A47B81/00
CPC分类号： H01L21/67046 , H01L21/67333 , H01L21/67706 , H01L21/67712 , H01L21/67748 , H01L21/67754 , H01L21/67781
摘要： Techniques for handling media arrays are disclosed. The techniques may be realized as a system for handling a plurality of substrates. The system may comprise a plurality of row elements for supporting the plurality of substrates, wherein the plurality of row elements may be operable to change configuration of the substrates from open configuration to a high-density configuration, where a distance between adjacent substrates in the open configuration may be greater than a distance between the adjacent substrates in the high-density configuration.
摘要翻译：公开了处理介质阵列的技术。这些技术可以被实现为用于处理多个基板的系统。所述系统可以包括用于支撑多个基板的多个行元件，其中所述多个行元件可操作以将基板的构型从开放构型改变为高密度构造，其中相邻基底之间在开口配置可以大于高密度配置中的相邻基板之间的距离。

2. 发明授权

US08746666B2 Media carrier 失效
标题翻译：媒体载体
公开(公告)号：US08746666B2
公开(公告)日：2014-06-10
申请号：US13101280
申请日：2011-05-05
申请人： Richard Hertel , Julian Blake , Edward Macintosh , Alexander Kontos , Frank Sinclair , Christopher Rowland , Mayur Jagtap , Sankar Ganesh Kolappan
发明人： Richard Hertel , Julian Blake , Edward Macintosh , Alexander Kontos , Frank Sinclair , Christopher Rowland , Mayur Jagtap , Sankar Ganesh Kolappan
IPC分类号： B23Q3/06
CPC分类号： H01L21/68771 , G11B23/0021 , G11B23/0317 , G11B23/0327
摘要： A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.
摘要翻译：公开了适于容纳多个磁性介质的介质载体。该介质载体可以放置在工件支撑件或压板上，允许磁性介质被处理。在一些实施例中，介质载体被设计成使得只有磁性介质的一侧被暴露，需要机器人或其他设备来反转载体中的每个介质以处理第二侧。在其他实施例中，介质载体被设计成使得磁性介质的两侧都被暴露。在这种情况下，媒体载体在压板上反转，以允许处理第二面。

3. 发明申请

US20130155569A1 High Conductivity Electrostatic Chuck 有权
标题翻译：高电导率静电卡盘
公开(公告)号：US20130155569A1
公开(公告)日：2013-06-20
申请号：US13818339
申请日：2011-09-08
申请人： David Suuronen , Lyudmila Stone , Julian Blake , Dale K. Stone , Richard A. Cooke , Steven Donnell , Chandra Venkatraman
发明人： David Suuronen , Lyudmila Stone , Julian Blake , Dale K. Stone , Richard A. Cooke , Steven Donnell , Chandra Venkatraman
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , B23Q3/152 , H01L21/6831 , H01L21/6833
摘要： In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.
摘要翻译：根据本发明的实施例，提供了一种静电卡盘，其包括覆盖静电卡盘的气体密封环的工件接触表面的至少一部分的导电路径，该导电路径包括至少一部分电路到地面; 以及静电卡盘的工件接触表面的主场区域，其表面电阻率范围为约108至约1012欧姆/平方。

4. 发明授权

US08461552B2 Active particle trapping for process control 失效
标题翻译：用于过程控制的活性颗粒捕集
公开(公告)号：US08461552B2
公开(公告)日：2013-06-11
申请号：US12943694
申请日：2010-11-10
申请人： Peter Nunan , Gregory Redinbo , Julian Blake , Paul S. Buccos
发明人： Peter Nunan , Gregory Redinbo , Julian Blake , Paul S. Buccos
IPC分类号： G21K5/00
CPC分类号： H01L21/67213 , C23C14/48 , C23C14/564 , H01L21/67017
摘要： A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.
摘要翻译：粒子隔离系统包括半导体处理室; 所述半导体处理室内的至少一个构件，其中所述构件具有至少第一位置和第二位置; 以及至少一个具有多个壁的隔离室，隔离室由多个壁限定，隔离隔室的多个壁中的至少一个限定了至少一个开口，其中第一位置的构件允许颗粒进入所述隔离室通过所述开口与所述半导体处理室隔离，并且其中所述第二位置中的所述构件基本上包围所述隔离隔室，从而将所述颗粒基本上保持在所述隔离室中，并且基本上限制所述颗粒在所述半导体处理室和所述隔离室之间的运动通过开放。还提供离子注入系统。

5. 发明申请

US20130084694A1 JUNCTION AVOIDANCE ON EDGES OF WORKPIECES 有权
标题翻译：关于工作边界的关系避免
公开(公告)号：US20130084694A1
公开(公告)日：2013-04-04
申请号：US13248056
申请日：2011-09-29
申请人： Julian Blake , Dale Stone
发明人： Julian Blake , Dale Stone
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/2658 , H01L31/068 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into the edge of the workpiece, components made of material having an opposite conductivity are placed near the workpiece. As ions from the beam strike these components, ions from the material are sputtered. These ions have the opposite conductivity as the implanted ions, and therefore inhibit the formation of junctions.
摘要翻译：公开了一种将离子注入工件而不形成影响工件性能的接合点的方法。为了抵消注入到工件边缘中的掺杂剂的影响，由具有相反电导率的材料制成的部件被放置在工件附近。当来自光束的离子撞击这些组分时，来自材料的离子被溅射。这些离子具有与注入离子相反的导电性，因此抑制结的形成。

6. 发明申请

US20120200980A1 TRIBOELECTRIC CHARGE CONTROLLED ELECTROSTATIC CLAMP 有权
标题翻译： TRIBOELECTRIC CHARGE控制静电夹
公开(公告)号：US20120200980A1
公开(公告)日：2012-08-09
申请号：US13021838
申请日：2011-02-07
申请人： Julian Blake , Dale K. Stone , Lyudmila Stone , David Suuronen , Shigeo Oshiro
发明人： Julian Blake , Dale K. Stone , Lyudmila Stone , David Suuronen , Shigeo Oshiro
IPC分类号： H05F3/02
CPC分类号： H01L21/6831
摘要： An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.
摘要翻译：公开了一种在去除之前更有效地从衬底去除积聚电荷的静电夹。目前，升降针和接地引脚是用于在植入后从衬底去除电荷的唯一机制。本公开描述了一种静电卡盘，其中顶部电介质表面具有嵌入的导电区域，例如密封环中的环形导电区域。因此，无论衬底在释放过程中的取向如何，衬底的至少一部分将包含工件支撑体的电介质层上的导电区域。该导电区域可以通过使用电介质层中的导电通孔而连接到地。在一些实施例中，这些导电通孔是用于向衬底的背侧供应气体的流体导管。

7. 发明申请

US20110207308A1 TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 有权
标题翻译：低温离子植入技术
公开(公告)号：US20110207308A1
公开(公告)日：2011-08-25
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. ENGLAND , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/265 , H01L21/683
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到端部冷却晶片经历离子注入工艺的工位。

8. 发明授权

US07935942B2 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US07935942B2
公开(公告)日：2011-05-03
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该装置可以包括位于离子注入机内的端站附近的预冷站。该装置还可以包括在预冷站内的冷却机构。该装置还可以包括耦合到预冷站和终端站的加载组件。该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中冷却晶片进行离子注入工艺。

9. 发明申请

US20100184250A1 SELF-ALIGNED SELECTIVE EMITTER FORMED BY COUNTERDOPING 审中-公开
标题翻译：自对准的选择性发射体
公开(公告)号：US20100184250A1
公开(公告)日：2010-07-22
申请号：US12688958
申请日：2010-01-18
申请人： Julian Blake , Russell Low
发明人： Julian Blake , Russell Low
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L21/26513 , H01L21/268 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of doping substrates, such as a solar cell, is disclosed. Conductors, such as metal lines, are often deposited on the surface of a substrate. In some embodiments, the conductivity of the substrate beneath the conductors is different than the conductivity of other regions of the substrate. Therefore, the conductors can serve as the mask for a subsequent blanket doping, which changes the conductivity of the surface of the substrate, except beneath the conductors. In some embodiments, an initial blanket doping is performed prior to the deposition of the conductors to create an initial uniformly doped region.
摘要翻译：公开了一种改进的掺杂衬底的方法，例如太阳能电池。诸如金属线的导体通常沉积在基底的表面上。在一些实施例中，导体下面的衬底的导电性不同于衬底的其它区域的导电性。因此，导体可以用作随后的覆盖掺杂的掩模，这改变了导体表面以外的导电性。在一些实施例中，在沉积导体之前进行初始覆盖掺杂以产生初始均匀掺杂区域。

10. 发明申请

US20080044938A1 Technique for low-temperature ion implantation 有权
标题翻译：低温离子注入技术
公开(公告)号：US20080044938A1
公开(公告)日：2008-02-21
申请号：US11504367
申请日：2006-08-15
申请人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan England , Steven R. Walther , Richard S. Muka , Julian Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01L21/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该装置可以包括位于离子注入机内的端站附近的预冷站。该装置还可以包括在预冷站内的冷却机构。该装置还可以包括耦合到预冷站和终端站的加载组件。该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，冷却晶片进行离子注入工艺。

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