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1. 发明申请

US20130155569A1 High Conductivity Electrostatic Chuck 有权
标题翻译：高电导率静电卡盘
公开(公告)号：US20130155569A1
公开(公告)日：2013-06-20
申请号：US13818339
申请日：2011-09-08
申请人： David Suuronen , Lyudmila Stone , Julian Blake , Dale K. Stone , Richard A. Cooke , Steven Donnell , Chandra Venkatraman
发明人： David Suuronen , Lyudmila Stone , Julian Blake , Dale K. Stone , Richard A. Cooke , Steven Donnell , Chandra Venkatraman
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , B23Q3/152 , H01L21/6831 , H01L21/6833
摘要： In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.
摘要翻译：根据本发明的实施例，提供了一种静电卡盘，其包括覆盖静电卡盘的气体密封环的工件接触表面的至少一部分的导电路径，该导电路径包括至少一部分电路到地面; 以及静电卡盘的工件接触表面的主场区域，其表面电阻率范围为约108至约1012欧姆/平方。

2. 发明授权

US09692325B2 High conductivity electrostatic chuck 有权
公开(公告)号：US09692325B2
公开(公告)日：2017-06-27
申请号：US13818339
申请日：2011-09-08
申请人： David Suuronen , Lyudmila Stone , Julian Blake , Dale K. Stone , Richard A. Cooke , Steven Donnell , Chandra Venkatraman
发明人： David Suuronen , Lyudmila Stone , Julian Blake , Dale K. Stone , Richard A. Cooke , Steven Donnell , Chandra Venkatraman
IPC分类号： H01L21/683 , H02N13/00 , B23Q3/152
CPC分类号： H02N13/00 , B23Q3/152 , H01L21/6831 , H01L21/6833
摘要： In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.

3. 发明申请

US20130070384A1 High Surface Resistivity Electrostatic Chuck 有权
标题翻译：高表面电阻静电卡盘
公开(公告)号：US20130070384A1
公开(公告)日：2013-03-21
申请号：US13699279
申请日：2011-05-24
申请人： Richard A. Cooke , Dale K. Stone , Lyudmila Stone , Julian Blake , David Suuronen
发明人： Richard A. Cooke , Dale K. Stone , Lyudmila Stone , Julian Blake , David Suuronen
IPC分类号： H02N13/00 , C23F1/00 , B05D5/12
CPC分类号： H02N13/00 , B05D5/12 , B23Q3/152 , C04B37/005 , C04B37/008 , C04B2237/06 , C04B2237/062 , C04B2237/08 , C04B2237/083 , C04B2237/086 , C04B2237/341 , C04B2237/343 , C04B2237/365 , C04B2237/368 , C23F1/00 , H01L21/6833
摘要： In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 1011 ohms per square.
摘要翻译：根据本发明的实施例，提供了一种静电卡盘。静电卡盘包括电极和由电极中的电压激活的表面层以形成电荷以将基板静电夹持到静电卡盘，该表面层包括电荷控制层，该电荷控制层包括大于约1011的表面电阻率欧姆每平方

4. 发明授权

US09025305B2 High surface resistivity electrostatic chuck 有权
标题翻译：高表面电阻率静电卡盘
公开(公告)号：US09025305B2
公开(公告)日：2015-05-05
申请号：US13699279
申请日：2011-05-24
申请人： Richard A. Cooke , Dale K. Stone , Lyudmila Stone , Julian Blake , David Suuronen
发明人： Richard A. Cooke , Dale K. Stone , Lyudmila Stone , Julian Blake , David Suuronen
IPC分类号： H01T23/00 , H02N13/00 , B23Q3/152 , C04B37/00 , H01L21/683 , B05D5/12 , C23F1/00
CPC分类号： H02N13/00 , B05D5/12 , B23Q3/152 , C04B37/005 , C04B37/008 , C04B2237/06 , C04B2237/062 , C04B2237/08 , C04B2237/083 , C04B2237/086 , C04B2237/341 , C04B2237/343 , C04B2237/365 , C04B2237/368 , C23F1/00 , H01L21/6833
摘要： In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 1011 ohms per square.
摘要翻译：根据本发明的实施例，提供了一种静电卡盘。静电卡盘包括电极和由电极中的电压激活的表面层以形成电荷以将基板静电夹持到静电卡盘，该表面层包括电荷控制层，该电荷控制层包括大于约1011的表面电阻率欧姆每平方

5. 发明授权

US09082804B2 Triboelectric charge controlled electrostatic clamp 有权
标题翻译：摩擦电荷控制静电夹
公开(公告)号：US09082804B2
公开(公告)日：2015-07-14
申请号：US13021838
申请日：2011-02-07
申请人： Julian Blake , Dale K. Stone , Lyudmila Stone , David Suuronen , Shigeo Oshiro
发明人： Julian Blake , Dale K. Stone , Lyudmila Stone , David Suuronen , Shigeo Oshiro
IPC分类号： H01L21/683
CPC分类号： H01L21/6831
摘要： An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.
摘要翻译：公开了一种在去除之前更有效地从衬底去除积聚电荷的静电夹。目前，升降针和接地引脚是用于在植入后从衬底去除电荷的唯一机制。本公开描述了一种静电卡盘，其中顶部电介质表面具有嵌入的导电区域，例如密封环中的环形导电区域。因此，无论衬底在释放过程中的取向如何，衬底的至少一部分将在工件支撑体的电介质层上包含导电区域。该导电区域可以通过使用电介质层中的导电通孔而连接到地。在一些实施例中，这些导电通孔是用于向衬底的背侧供应气体的流体导管。

6. 发明申请

US20120200980A1 TRIBOELECTRIC CHARGE CONTROLLED ELECTROSTATIC CLAMP 有权
标题翻译： TRIBOELECTRIC CHARGE控制静电夹
公开(公告)号：US20120200980A1
公开(公告)日：2012-08-09
申请号：US13021838
申请日：2011-02-07
申请人： Julian Blake , Dale K. Stone , Lyudmila Stone , David Suuronen , Shigeo Oshiro
发明人： Julian Blake , Dale K. Stone , Lyudmila Stone , David Suuronen , Shigeo Oshiro
IPC分类号： H05F3/02
CPC分类号： H01L21/6831
摘要： An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.
摘要翻译：公开了一种在去除之前更有效地从衬底去除积聚电荷的静电夹。目前，升降针和接地引脚是用于在植入后从衬底去除电荷的唯一机制。本公开描述了一种静电卡盘，其中顶部电介质表面具有嵌入的导电区域，例如密封环中的环形导电区域。因此，无论衬底在释放过程中的取向如何，衬底的至少一部分将包含工件支撑体的电介质层上的导电区域。该导电区域可以通过使用电介质层中的导电通孔而连接到地。在一些实施例中，这些导电通孔是用于向衬底的背侧供应气体的流体导管。

7. 发明申请

US20060108544A1 POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEM 失效
标题翻译：离子植入系统中的电源检测和控制
公开(公告)号：US20060108544A1
公开(公告)日：2006-05-25
申请号：US10995836
申请日：2004-11-23
申请人： Steven Richards , Julian Blake , Steven Campbell
发明人： Steven Richards , Julian Blake , Steven Campbell
IPC分类号： H01J37/08
CPC分类号： H01J37/241 , H01J37/304 , H01J2237/0203
摘要： In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.
摘要翻译：一方面，本发明提供了一种管理提供给半导体处理装置的功率波动的方法，该方法包括监视提供给该装置的功率，以检测半导体处理会话期间发生功率波动事件。在检测到功率波动事件时，可以中断半导体处理。在功率波动事件结束之后，可以测量设备的至少一个操作参数，例如真空处理室中的真空度，并且当测量的操作参数在可接受的范围内时，可以恢复半导体处理。测量的操作参数可以优选地包括当受到功率波动事件的不利影响时，比其他参数恢复得更慢的参数。

8. 发明授权

US08598021B2 Method for junction avoidance on edge of workpieces 有权
标题翻译：工件边缘接合避免的方法
公开(公告)号：US08598021B2
公开(公告)日：2013-12-03
申请号：US13248056
申请日：2011-09-29
申请人： Julian Blake , Dale Stone
发明人： Julian Blake , Dale Stone
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01L21/2658 , H01L31/068 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into the edge of the workpiece, components made of material having an opposite conductivity are placed near the workpiece. As ions from the beam strike these components, ions from the material are sputtered. These ions have the opposite conductivity as the implanted ions, and therefore inhibit the formation of junctions.
摘要翻译：公开了一种将离子注入工件而不形成影响工件性能的接合点的方法。为了抵消注入到工件边缘中的掺杂剂的影响，由具有相反电导率的材料制成的部件被放置在工件附近。当来自光束的离子撞击这些组分时，来自材料的离子被溅射。这些离子具有与注入离子相反的导电性，因此抑制结的形成。

9. 发明申请

US20090084988A1 SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION 审中-公开
标题翻译：用于绝缘子绝缘子制造的单波长植绒
公开(公告)号：US20090084988A1
公开(公告)日：2009-04-02
申请号：US11862810
申请日：2007-09-27
申请人： Julian Blake , Yuri Erokhin , Jonathan England
发明人： Julian Blake , Yuri Erokhin , Jonathan England
IPC分类号： G21K5/08
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/0815 , H01J2237/2001 , H01J2237/31703 , H01L21/67109 , H01L21/6831
摘要： An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300° C. to 600° C.
摘要翻译：公开了一种离子注入机。一个这样的离子注入机包括被配置为将氧，氮，氦或氢离子产生到具有特定剂量范围的离子束中的离子束源，以及被配置为从离子束去除不想要的物质的分析器磁体。离子注入机包括具有后侧气体热耦合的静电卡盘，其被配置为保持单个工件用于通过离子束进行绝缘体上硅的注入，并且被配置为将工件冷却至约300℃的温度至600℃

10. 发明申请

US20130209198A1 TECHNIQUES FOR HANDLING MEDIA ARRAYS 有权
标题翻译：处理媒体阵列的技术
公开(公告)号：US20130209198A1
公开(公告)日：2013-08-15
申请号：US13397441
申请日：2012-02-15
申请人： Paul Forderhase , Julian Blake , William Weaver
发明人： Paul Forderhase , Julian Blake , William Weaver
IPC分类号： H01L21/683 , F16M13/00 , F28F7/00 , C23C16/48 , B05C13/00 , B44C1/22 , H01L21/68 , A47B81/00
CPC分类号： H01L21/67046 , H01L21/67333 , H01L21/67706 , H01L21/67712 , H01L21/67748 , H01L21/67754 , H01L21/67781
摘要： Techniques for handling media arrays are disclosed. The techniques may be realized as a system for handling a plurality of substrates. The system may comprise a plurality of row elements for supporting the plurality of substrates, wherein the plurality of row elements may be operable to change configuration of the substrates from open configuration to a high-density configuration, where a distance between adjacent substrates in the open configuration may be greater than a distance between the adjacent substrates in the high-density configuration.
摘要翻译：公开了处理介质阵列的技术。这些技术可以被实现为用于处理多个基板的系统。所述系统可以包括用于支撑多个基板的多个行元件，其中所述多个行元件可操作以将所述基板的构型从开放构型改变为高密度配置，其中所述相邻基板之间的距离为开放配置可以大于高密度配置中的相邻基板之间的距离。

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