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    • 2. 发明授权
    • Silica glass containing TiO2 and optical material for EUV lithography
    • 含二氧化硅的玻璃和用于EUV光刻的光学材料
    • US07462574B2
    • 2008-12-09
    • US11174533
    • 2005-07-06
    • Yasutomi IwahashiAkio Koike
    • Yasutomi IwahashiAkio Koike
    • C03C3/06G02B1/00C03B19/00C03B19/14
    • C03C3/06C03B19/1484C03B2201/42C03C4/0085C03C2201/42
    • A silica glass containing TiO2, characterized in that the fluctuation of the refractive index (Δn) is at most 2×10−4 within an area of 30 mm×30 mm in at least one plane. A silica glass containing TiO2, characterized in that the TiO2 concentration is at least 1 mass %, and the striae pitch is at most 10 μm. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, and the fluctuation of the refractive index (Δn) is at most 2×10−4 in a plane perpendicular to the incident light direction. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, wherein the TiO2 concentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiO2 concentration is at most 0.06 mass % in a plane perpendicular to the incident light direction.
    • 含有TiO 2的二氧化硅玻璃,其特征在于,在至少一个平面中,在30mm×30mm的面积内,折射率(Deltan)的波动至多为2×10 -4。 含有TiO 2的二氧化硅玻璃,其特征在于TiO 2浓度为1质量%以上,条纹间距为10μm以下。 一种用于EUV光刻的光学材料,其特征在于它由含有TiO 2的二氧化硅玻璃制成,并且在垂直于入射光方向的平面中折射率(Deltan)的波动为至多2×10 -4。 一种用于EUV光刻的光学材料,其特征在于,其由TiO 2的二氧化硅玻璃制成,其中TiO 2浓度为至少1质量%,并且TiO 2浓度的最大值和最小值之间的差为至多0.06 在垂直于入射光方向的平面中的质量%。