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1. 发明申请

US20070159887A1 Method and Apparatus for Programming Nonvolatile Memory 有权
标题翻译：用于编程非易失性存储器的方法和装置
公开(公告)号：US20070159887A1
公开(公告)日：2007-07-12
申请号：US11532054
申请日：2006-09-14
申请人： Yi Te Shih , Jer Hao Hsu , Yi-Ti Wang , Hsueh-Yi Lee
发明人： Yi Te Shih , Jer Hao Hsu , Yi-Ti Wang , Hsueh-Yi Lee
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： G11C16/0491 , G11C16/12 , G11C16/3427 , G11C16/3459
摘要： Embodiments of addressing the programming disturb effect are shown. A medium voltage having a magnitude between the programming voltage and ground is applied to a metal bit line among the cells that are subject to the program disturb effect.
摘要翻译：示出了解决编程干扰效应的实施例。具有编程电压和接地之间的幅度的中等电压被施加到受到编程干扰效应的单元中的金属位线。

2. 发明授权

US07593264B2 Method and apparatus for programming nonvolatile memory 有权
标题翻译：用于非易失性存储器编程的方法和装置
公开(公告)号：US07593264B2
公开(公告)日：2009-09-22
申请号：US11532054
申请日：2006-09-14
申请人： Yi Te Shih , Jer-Hao Hsu , Yi-Ti Wang , Hsueh-Yi Lee
发明人： Yi Te Shih , Jer-Hao Hsu , Yi-Ti Wang , Hsueh-Yi Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/0491 , G11C16/12 , G11C16/3427 , G11C16/3459
摘要： Embodiments of addressing the programming disturb effect are shown. A medium voltage having a magnitude between the programming voltage and ground is applied to a metal bit line among the cells that are subject to the program disturb effect.
摘要翻译：示出了解决编程干扰效应的实施例。具有编程电压和接地之间的幅度的中等电压被施加到受到编程干扰效应的单元中的金属位线。

3. 发明申请

US20060132219A1 Charge pump circuit 有权
标题翻译：电荷泵电路
公开(公告)号：US20060132219A1
公开(公告)日：2006-06-22
申请号：US11018390
申请日：2004-12-21
申请人： Kuan-Yeu Chen , Yi-Ti Wang
发明人： Kuan-Yeu Chen , Yi-Ti Wang
IPC分类号： G05F1/10
CPC分类号： H02M3/073 , H02M2003/078
摘要： In an embodiment, a charge pump circuit comprises a first pump stage, including a first sub-pump coupled to a first pre-charge MOSFET transistor, wherein the first sub-pump is used to pump down a gate of the first pre-charge MOSFET transistor to thereby increase the pre-charge efficiency of the first pre-charge MOSFET transistor. The higher efficiency the re-charge MOSFET is, the lower the gate level of pass transistor is. Thus, the charge sharing efficiency becomes better, and the body effect will be eliminated. The following pump stage is the same as the first pump stage. In addition, this embodiment is implemented by PMOSFET only; therefore, only single well is needed and then a small layout area can be achieved. Consequently, a high efficiency negative pump can be obtained.
摘要翻译：在一个实施例中，电荷泵电路包括第一泵级，包括耦合到第一预充电MOSFET晶体管的第一子泵，其中第一子泵用于泵浦第一预充电MOSFET的栅极从而提高第一预充电MOSFET晶体管的预充电效率。再充电MOSFET的效率越高，传输晶体管的栅极电平越低。因此，电荷共享效率变得更好，身体效果将被消除。以下泵级与第一级泵相同。此外，该实施例仅由PMOSFET实现; 因此，只需要单个井，然后可以实现小的布局面积。因此，可以获得高效率的负泵。

4. 发明授权

US07323926B2 Charge pump circuit 有权
标题翻译：电荷泵电路
公开(公告)号：US07323926B2
公开(公告)日：2008-01-29
申请号：US11018390
申请日：2004-12-21
申请人： Kuan-Yeu Chen , Yi-Ti Wang
发明人： Kuan-Yeu Chen , Yi-Ti Wang
IPC分类号： G05F3/24
CPC分类号： H02M3/073 , H02M2003/078
摘要： A charge pump circuit comprises a first pump stage, including a first sub-pump coupled to a first pre-charge MOSFET transistor, wherein the first sub-pump is used to pump down a gate of the first pre-charge MOSFET transistor to thereby increase the pre-charge efficiency of the first pre-charge MOSFET transistor. The higher efficiency the pre-charge MOSFET is, the lower the gate level of a pass transistor is. Thus, the charge sharing efficiency becomes better, and the body effect will be eliminated. The following pump stage is the same as the first pump stage. In addition, this pre-charging is implemented by PMOSFET only; therefore, only a single well is needed and then a small layout area can be achieved. Consequently, a high efficiency negative pump can be obtained.
摘要翻译：电荷泵电路包括第一泵级，包括耦合到第一预充电MOSFET晶体管的第一子泵，其中第一子泵用于泵浦第一预充电MOSFET晶体管的栅极，从而增加第一预充电MOSFET晶体管的预充电效率。预充电MOSFET的效率越高，传输晶体管的栅极电平越低。因此，电荷共享效率变得更好，身体效果将被消除。以下泵级与第一级泵相同。此外，该预充电仅由PMOSFET实现; 因此，只需要一个井，然后可以实现小的布局区域。因此，可以获得高效率的负泵。

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