专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090104789A1 METHOD AND SYSTEM FOR IMPROVING DIELECTRIC FILM QUALITY FOR VOID FREE GAP FILL 有权
标题翻译：用于改善无电隙隙填料的电介质膜质量的方法和系统
公开(公告)号：US20090104789A1
公开(公告)日：2009-04-23
申请号：US11876541
申请日：2007-10-22
申请人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
发明人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/24 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76837
摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.
摘要翻译：在基板上形成氧化硅层的方法。该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

2. 发明授权

US07541297B2 Method and system for improving dielectric film quality for void free gap fill 有权
标题翻译：改善空隙填隙电介质膜质量的方法和系统
公开(公告)号：US07541297B2
公开(公告)日：2009-06-02
申请号：US11876541
申请日：2007-10-22
申请人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
发明人： Abhijit Basu Mallick , Jeffrey C. Munro , Linlin Wang , Srinivas D. Nemani , Yi Zheng , Zheng Yuan , Dimitry Lubomirsky , Ellie Y. Yieh
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/24 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76837
摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.
摘要翻译：在基板上形成氧化硅层的方法。该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

3. 发明授权

US07943531B2 Methods for forming a silicon oxide layer over a substrate 有权
标题翻译：在衬底上形成氧化硅层的方法
公开(公告)号：US07943531B2
公开(公告)日：2011-05-17
申请号：US11876664
申请日：2007-10-22
申请人： Srinivas D. Nemani , Abhijit Basu Mallick , Ellie Y. Yieh
发明人： Srinivas D. Nemani , Abhijit Basu Mallick , Ellie Y. Yieh
IPC分类号： H01L21/469
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02274 , H01L21/02337 , H01L21/3122 , H01L21/31633
摘要： A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.
摘要翻译：在衬底上沉积氧化硅层的方法包括向沉积室提供衬底。第一含硅前体，第二含硅前体和NH 3等离子体反应形成氧化硅层。第一含硅前体包括Si-H键和Si-Si键中的至少一种。第二含硅前体包括至少一个Si-N键。沉积的氧化硅层退火。

4. 发明申请

US20090104791A1 Methods for Forming a Silicon Oxide Layer Over a Substrate 有权
标题翻译：在基板上形成氧化硅层的方法
公开(公告)号：US20090104791A1
公开(公告)日：2009-04-23
申请号：US11876664
申请日：2007-10-22
申请人： Srinivas D. Nemani , Abhijit Basu Mallick , Ellie Y. Yieh
发明人： Srinivas D. Nemani , Abhijit Basu Mallick , Ellie Y. Yieh
IPC分类号： H01L21/31
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02274 , H01L21/02337 , H01L21/3122 , H01L21/31633
摘要： A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.
摘要翻译：在衬底上沉积氧化硅层的方法包括向沉积室提供衬底。第一含硅前体，第二含硅前体和NH 3等离子体反应形成氧化硅层。第一含硅前体包括Si-H键和Si-Si键中的至少一种。第二含硅前体包括至少一个Si-N键。沉积的氧化硅层退火。

5. 发明授权

US07498273B2 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes 有权
标题翻译：形成用于STI的二氧化硅的高质量电介质膜：用于竖琴II远程等离子体增强沉积工艺的不同硅氧烷基前体的使用
公开(公告)号：US07498273B2
公开(公告)日：2009-03-03
申请号：US11549930
申请日：2006-10-16
申请人： Abhijit Basu Mallick , Jeffrey C. Munro , Srinivas D. Nemani
发明人： Abhijit Basu Mallick , Jeffrey C. Munro , Srinivas D. Nemani
IPC分类号： H01L21/00
CPC分类号： C23C16/045 , C23C16/401 , C23C16/452 , C23C16/45525 , C23C16/45553 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31116 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76224 , Y10S438/931
摘要： Methods of depositing a dielectric layer in a gap formed on a substrate are described. The methods include introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber. The organo-silicon precursor has a C:Si atom ratio of less than 8, and the oxygen precursor comprises atomic oxygen that is generated outside the deposition chamber. The precursors are reacted to form the dielectric layer in the gap. Methods of filling gaps with dielectric materials are also described. These methods include providing an organo-silicon precursor having a C:Si atom ratio of less than 8 and an oxygen precursor, and generating a plasma from the precursors to deposit a first portion of the dielectric material in the gap. The dielectric material may be etched, and a second portion of dielectric material may be formed in the gap. The first and second portions of the dielectric material may be annealed.
摘要翻译：描述了在形成在衬底上的间隙中沉积电介质层的方法。所述方法包括将有机硅前体和氧前体引入沉积室。有机硅前体的C：Si原子比小于8，氧前体包括在沉积室外产生的原子氧。反应前体在间隙中形成电介质层。还描述了用介电材料填充间隙的方法。这些方法包括提供C：Si原子比小于8的有机硅前体和氧前体，并从前体产生等离子体以在间隙中沉积介电材料的第一部分。电介质材料可以被蚀刻，并且介电材料的第二部分可以形成在间隙中。电介质材料的第一和第二部分可以退火。

6. 发明申请

US20070281495A1 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES 有权
标题翻译：形成硅二氧化硅的高质量电介质膜：用于HARP II的不同的基于硅氧烷的前驱体 - 远程等离子体增强沉积工艺
公开(公告)号：US20070281495A1
公开(公告)日：2007-12-06
申请号：US11549930
申请日：2006-10-16
申请人： Abhijit Basu Mallick , Jeffrey C. Munro , Srinivas D. Nemani
发明人： Abhijit Basu Mallick , Jeffrey C. Munro , Srinivas D. Nemani
IPC分类号： H01L21/31
CPC分类号： C23C16/045 , C23C16/401 , C23C16/452 , C23C16/45525 , C23C16/45553 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31116 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76224 , Y10S438/931
摘要： Methods of depositing a dielectric layer in a gap formed on a substrate are described. The methods include introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber. The organo-silicon precursor has a C:Si atom ratio of less than 8, and the oxygen precursor comprises atomic oxygen that is generated outside the deposition chamber. The precursors are reacted to form the dielectric layer in the gap. Methods of filling gaps with dielectric materials are also described. These methods include providing an organo-silicon precursor having a C:Si atom ratio of less than 8 and an oxygen precursor, and generating a plasma from the precursors to deposit a first portion of the dielectric material in the gap. The dielectric material may be etched, and a second portion of dielectric material may be formed in the gap. The first and second portions of the dielectric material may be annealed.
摘要翻译：描述了在形成在衬底上的间隙中沉积电介质层的方法。所述方法包括将有机硅前体和氧前体引入沉积室。有机硅前体的C：Si原子比小于8，氧前体包括在沉积室外产生的原子氧。反应前体在间隙中形成电介质层。还描述了用介电材料填充间隙的方法。这些方法包括提供C：Si原子比小于8的有机硅前体和氧前体，并从前体产生等离子体以在间隙中沉积介电材料的第一部分。电介质材料可以被蚀刻，并且介电材料的第二部分可以形成在间隙中。电介质材料的第一和第二部分可以退火。

7. 发明申请

US20110014798A1 HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS 有权
标题翻译：通过远程等离子体CVD从高性能前驱体制造的高品质硅氧烷膜
公开(公告)号：US20110014798A1
公开(公告)日：2011-01-20
申请号：US12891426
申请日：2010-09-27
申请人： Abhijit Basu Mallick , Srinivas D. Nemani , Ellie Yieh
发明人： Abhijit Basu Mallick , Srinivas D. Nemani , Ellie Yieh
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56
摘要： A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.
摘要翻译：一种在衬底上沉积含硅和氮的膜的方法。该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。

8. 发明申请

US20100255655A1 CURING METHODS FOR SILICON DIOXIDE MULTI-LAYERS 有权
标题翻译：二氧化硅多层固化方法
公开(公告)号：US20100255655A1
公开(公告)日：2010-10-07
申请号：US12817840
申请日：2010-06-17
申请人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
发明人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
IPC分类号： H01L21/762
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31608
摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.
摘要翻译：提供了在基板上固化氧化硅层的方法。所述方法可以包括提供半导体处理室和衬底并形成填充衬底上的沟槽的一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。所述方法还包括将酸性蒸汽引入半导体处理室，酸性蒸气与氧化硅层反应以从氧化硅层除去碳物质。所述方法还可以包括在固化的氧化硅上沉积额外的氧化硅以填充沟槽。所述方法还可以包括从半导体处理室去除酸性蒸汽。

9. 发明授权

US07745352B2 Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process 失效
标题翻译：用竖琴II工艺由烷氧基硅烷前体沉积的二氧化硅薄膜的固化方法
公开(公告)号：US07745352B2
公开(公告)日：2010-06-29
申请号：US11845445
申请日：2007-08-27
申请人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
发明人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
IPC分类号： H01L21/31 , H01L21/469 , B05D3/00
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31608
摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：提供了在基板上固化氧化硅层的方法。所述方法可以包括提供半导体处理室和衬底以及形成覆盖衬底的至少一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。所述方法还可以包括将酸性蒸气引入半导体处理室，酸性蒸汽与氧化硅层反应以从氧化硅层去除碳物质。所述方法还可以包括从半导体处理室去除酸性蒸汽。还描述了在衬底上沉积氧化硅层的系统。

10. 发明申请

US20090061647A1 CURING METHODS FOR SILICON DIOXIDE THIN FILMS DEPOSITED FROM ALKOXYSILANE PRECURSOR WITH HARP II PROCESS 失效
标题翻译：二氧化硅薄膜的固化方法由具有HARP II工艺的烷基硅烷前体沉积
公开(公告)号：US20090061647A1
公开(公告)日：2009-03-05
申请号：US11845445
申请日：2007-08-27
申请人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
发明人： Abhijit Basu Mallick , Srinivas D. Nemani , Timothy W. Weidman
IPC分类号： H01L21/31
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31608
摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：提供了在基板上固化氧化硅层的方法。所述方法可以包括提供半导体处理室和衬底以及形成覆盖衬底的至少一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。所述方法还可以包括将酸性蒸气引入半导体处理室，酸性蒸汽与氧化硅层反应以从氧化硅层去除碳物质。所述方法还可以包括从半导体处理室去除酸性蒸汽。还描述了在衬底上沉积氧化硅层的系统。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式