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1. 外观设计

USD934467S1 Headlight 有权
公开(公告)号：USD934467S1
公开(公告)日：2021-10-26
申请号：US29735415
申请日：2020-05-21
申请人： Chun Hu
设计人： Chun Hu

2. 外观设计

USD922621S1 Headlight 有权
公开(公告)号：USD922621S1
公开(公告)日：2021-06-15
申请号：US29693553
申请日：2019-06-03
申请人： Chun Hu
设计人： Chun Hu

3. 外观设计

USD897597S1 Tail light 有权
公开(公告)号：USD897597S1
公开(公告)日：2020-09-29
申请号：US29693561
申请日：2019-06-03
申请人： Chun Hu
设计人： Chun Hu

4. 发明申请

US20110315014A1 METHOD FOR REMOVING SOx FROM GAS USING POLYETHYLENE GLYCOL 有权
标题翻译：使用聚乙二醇从气体中除去SOx的方法
公开(公告)号：US20110315014A1
公开(公告)日：2011-12-29
申请号：US13201521
申请日：2010-02-10
申请人： Xionghui Wei , Fang Han , Jianbin Zhang , Pengyan Zhang , Daolong Gao , Jinfei Wang , Chuan Zou , Chun Hu
发明人： Xionghui Wei , Fang Han , Jianbin Zhang , Pengyan Zhang , Daolong Gao , Jinfei Wang , Chuan Zou , Chun Hu
IPC分类号： B01D53/14
CPC分类号： B01D53/507 , B01D53/1425 , B01D53/1481 , B01D2252/2026 , B01D2252/40 , B01D2257/302 , B01D2258/02 , B01D2258/0283 , C01B17/60 , C01B17/90 , Y02A50/2348
摘要： A method for removing SOx (x=2 and/or 3) from gas using a solution having polyethylene glycol as the main ingredient. First, SOx in the gas is absorbed by the solution of polyethylene glycol. Second, the solution of polyethylene glycol which has absorbed SOx is regenerated by one or more of the heating, vacuum, ultrasonic, microwave or radiation methods, thereby releasing the by-products of sulfur dioxide and sulfur trioxide. The regenerated solution of polyethylene glycol is recycled. When the water content of the regenerated solution of polyethylene glycol is high enough to affect the desulfurization, it needs to be removed. Removal methods include heating and rectification, absorption using a water absorbent, or a combination of these methods. The polyethylene glycol solution is recycled after dehydration.
摘要翻译：使用以聚乙二醇为主要成分的溶液从气体中除去SO x（x = 2和/或3）的方法。首先，气体中的SOx被聚乙二醇的溶液吸收。其次，通过加热，真空，超声波，微波或辐射方法中的一种或多种再生吸收了SOx的聚乙二醇溶液，从而释放出二氧化硫和三氧化硫的副产物。再生聚乙二醇溶液。当聚乙二醇的再生溶液的含水量足够高以影响脱硫时，需要除去。去除方法包括加热和精馏，使用吸水剂的吸收，或这些方法的组合。脱水后再聚乙二醇溶液。

5. 发明授权

US07078786B1 Composite series resistor having reduced temperature sensitivity in an IC chip 有权
标题翻译：复合串联电阻在IC芯片中具有降低的温度灵敏度
公开(公告)号：US07078786B1
公开(公告)日：2006-07-18
申请号：US10843190
申请日：2004-05-10
申请人： Marco Racanelli , Chun Hu , Chih-Chieh Shen
发明人： Marco Racanelli , Chun Hu , Chih-Chieh Shen
IPC分类号： H01L29/00
CPC分类号： H01L28/24 , H01L27/0802 , H01L28/20
摘要： According to one exemplary embodiment, an integrated circuit chip comprises an oxide region. The integrated circuit chip further comprises a poly resistor having a first terminal and second terminal, where the poly resistor is situated over the oxide region. According to this exemplary embodiment, the integrated circuit chip further comprises a metal resistor having a first terminal and a second terminal, where the metal resistor is situated over the poly resistor, and where the first terminal of the metal resistor is connected to the first terminal of the poly resistor. According to this exemplary embodiment, the integrated circuit chip may further comprise a first metal segment connected to the second terminal of the metal resistor and a second metal segment connected to the second terminal of the poly resistor. The integrated circuit chip may further comprise an inter-layer dielectric situated between the poly resistor and the metal resistor.
摘要翻译：根据一个示例性实施例，集成电路芯片包括氧化物区域。集成电路芯片还包括具有第一端子和第二端子的聚电阻器，其中多晶硅电阻器位于氧化物区域上方。根据该示例性实施例，集成电路芯片还包括具有第一端子和第二端子的金属电阻器，其中金属电阻器位于多晶硅电阻器上方，并且金属电阻器的第一端子连接到第一端子的聚电阻。根据该示例性实施例，集成电路芯片还可以包括连接到金属电阻器的第二端子的第一金属段和连接到多晶硅电阻器的第二端子的第二金属段。集成电路芯片还可以包括位于多个电阻器和金属电阻器之间的层间电介质。

6. 外观设计

USD942654S1 LED front side light with daytime running lights 有权
公开(公告)号：USD942654S1
公开(公告)日：2022-02-01
申请号：US29715912
申请日：2019-12-05
申请人： Chun Hu
设计人： Chun Hu

7. 外观设计

USD895879S1 Tail light 有权
公开(公告)号：USD895879S1
公开(公告)日：2020-09-08
申请号：US29693557
申请日：2019-06-03
申请人： Chun Hu
设计人： Chun Hu

8. 发明授权

US09017454B2 Method for removing SOx from gas using polyethylene glycol 有权
标题翻译：使用聚乙二醇从气体中除去SOx的方法
公开(公告)号：US09017454B2
公开(公告)日：2015-04-28
申请号：US13201521
申请日：2010-02-10
申请人： Xionghui Wei , Fang Han , Jianbin Zhang , Pengyan Zhang , Daolong Gao , Jinfei Wang , Chuan Zou , Chun Hu
发明人： Xionghui Wei , Fang Han , Jianbin Zhang , Pengyan Zhang , Daolong Gao , Jinfei Wang , Chuan Zou , Chun Hu
IPC分类号： B01D53/14 , B01D53/50 , C01B17/60 , C01B17/90
CPC分类号： B01D53/507 , B01D53/1425 , B01D53/1481 , B01D2252/2026 , B01D2252/40 , B01D2257/302 , B01D2258/02 , B01D2258/0283 , C01B17/60 , C01B17/90 , Y02A50/2348
摘要： A method for removing SOx (x=2 and/or 3) from gas using a solution having polyethylene glycol as the main ingredient. First, SOx in the gas is absorbed by the solution of polyethylene glycol. Second, the solution of polyethylene glycol which has absorbed SOx is regenerated by one or more of the heating, vacuum, ultrasonic, microwave or radiation methods, thereby releasing the by-products of sulfur dioxide and sulfur trioxide. The regenerated solution of polyethylene glycol is recycled. When the water content of the regenerated solution of polyethylene glycol is high enough to affect the desulfurization, it needs to be removed. Removal methods include heating and rectification, absorption using a water absorbent, or a combination of these methods. The polyethylene glycol solution is recycled after dehydration.
摘要翻译：使用以聚乙二醇为主要成分的溶液从气体中除去SO x（x = 2和/或3）的方法。首先，气体中的SOx被聚乙二醇的溶液吸收。其次，通过加热，真空，超声波，微波或辐射方法中的一种或多种再生吸收了SOx的聚乙二醇溶液，从而释放出二氧化硫和三氧化硫的副产物。再生聚乙二醇溶液。当聚乙二醇的再生溶液的含水量足够高以影响脱硫时，需要除去。去除方法包括加热和精馏，使用吸水剂的吸收，或这些方法的组合。脱水后再聚乙二醇溶液。

9. 发明授权

US06995068B1 Double-implant high performance varactor and method for manufacturing same 有权
标题翻译：双种植体高性能变容二极管及其制造方法
公开(公告)号：US06995068B1
公开(公告)日：2006-02-07
申请号：US09590462
申请日：2000-06-09
申请人： Marco Racanelli , Chun Hu , Phil N. Sherman
发明人： Marco Racanelli , Chun Hu , Phil N. Sherman
IPC分类号： H01L21/76
CPC分类号： H01L29/66174 , H01L29/93
摘要： A varactor designed to enable voltage controlled oscillator (VCO) integration in wireless systems is the base-emitter junction of a specially optimized NPN device formed with a double base implant. A first, shallow implant optimizes capacitance, leakage current, and tuning range. A second, deeper base implant is used to improve the quality factor of the device by reducing the base resistance. The varactor includes a third terminal (collector), which isolates the emitter-base junction from the substrate, providing flexibility in circuit applications. A method for fabricating a high performance varactor having the above-described structure is also provided.
摘要翻译：设计用于在无线系统中实现压控振荡器（VCO）集成的变容二极管是由双基底植入物形成的特别优化的NPN器件的基极 - 发射极结。第一个浅的注入优化电容，漏电流和调谐范围。第二个更深的基底植入物用于通过降低基极电阻来改善器件的品质因数。变容二极管包括第三端子（集电极），其将发射极 - 基极结与衬底隔离，在电路应用中提供灵活性。还提供了一种制造具有上述结构的高性能变容二极管的方法。

10. 发明授权

US06933202B1 Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure 有权
标题翻译：将SiGe NPN和垂直PNP器件集成在衬底和相关结构上的方法
公开(公告)号：US06933202B1
公开(公告)日：2005-08-23
申请号：US10821425
申请日：2004-04-09
申请人： Paul D. Hurwitz , Kenneth M. Ring , Chun Hu , Amol Kalburge
发明人： Paul D. Hurwitz , Kenneth M. Ring , Chun Hu , Amol Kalburge
IPC分类号： H01L21/8228
CPC分类号： H01L21/82285 , H01L21/8228 , H01L27/0826
摘要： According to one exemplary embodiment, a method for forming an NPN and a vertical PNP device on a substrate comprises forming an insulating layer over an NPN region and a PNP region of the substrate. The method further comprises forming a buffer layer on the insulating layer and forming an opening in the buffer layer and the insulating layer in the NPN region, where the opening exposes the substrate. The method further comprises forming a semiconductor layer on the buffer layer and in the opening in the NPN region, where the semiconductor layer has a first portion situated in the opening and a second portion situated on the buffer layer in the PNP region. The first portion of the semiconductor layer forms a single crystal base of the NPN device and the second portion of the semiconductor layer forms a polycrystalline emitter of the vertical PNP device.
摘要翻译：根据一个示例性实施例，在衬底上形成NPN和垂直PNP器件的方法包括在衬底的NPN区域和PNP区域上形成绝缘层。该方法还包括在绝缘层上形成缓冲层，并在NPN区域中的缓冲层和绝缘层中形成开口，其中开口露出基板。所述方法还包括在所述NPN区域中的所述缓冲层和所述开口中形成半导体层，其中所述半导体层具有位于所述开口中的第一部分和位于所述PNP区域中的所述缓冲层上的第二部分。半导体层的第一部分形成NPN器件的单晶基底，半导体层的第二部分形成垂直PNP器件的多晶发射极。

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