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1. 发明申请

US20070120254A1 Semiconductor device comprising a pn-heterojunction 审中-公开
标题翻译：包括pn异质结的半导体器件
公开(公告)号：US20070120254A1
公开(公告)日：2007-05-31
申请号：US10584038
申请日：2004-12-20
申请人： Godefridus Hurkx , Prabhat Agarwal , Abraham Balkenende , Petrus Hubertus Magnee , Melanie Wagemans , Erik Petrus Antonius Bakkers , Erwin Hijzen
发明人： Godefridus Hurkx , Prabhat Agarwal , Abraham Balkenende , Petrus Hubertus Magnee , Melanie Wagemans , Erik Petrus Antonius Bakkers , Erwin Hijzen
IPC分类号： H01L23/48
CPC分类号： H01L29/8611 , B82Y10/00 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , H01L29/66136 , H01L29/66219 , H01L2924/0002 , H01L2924/00
摘要： An electric device is disclosed comprising a pn-heterojunction (4) formed by a nanowire (3) of 111-V semiconductor material and a semiconductor body (1) comprising a group IV semiconductor material. The nanowire (3) is positioned in direct contact with the surface (2) of the semiconductor body (1) and has a first conductivity type, the semiconductor body (1) has a second conductivity type opposite to the first conductivity type, the nanowire (3) forming with the semiconductor body (1) a pn-heterojunction (4). The nanowire of III-V semiconductor material can be used as a diffusion source (5) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region (6) in the semiconductor body in direct contact with the nanowire (3).
摘要翻译：公开了一种电子器件，其包括由111-V族半导体材料的纳米线（3）和包含IV族半导体材料的半导体本体（1）形成的pn异质结（4）。纳米线（3）与半导体本体（1）的表面（2）直接接触并且具有第一导电类型，半导体本体（1）具有与第一导电类型相反的第二导电类型，纳米线（3）与半导体本体（1）形成pn异质结（4）。 III-V族半导体材料的纳米线可以用作半导体本体中掺杂剂原子的扩散源（5）。来自III-V材料的扩散的III族原子和/或V族原子是在半导体本体中与纳米线（3）直接接触形成区域（6）的掺杂剂原子。

2. 发明授权

US08134142B2 Tunneling transistor with barrier 有权
标题翻译：具有屏障的隧道晶体管
公开(公告)号：US08134142B2
公开(公告)日：2012-03-13
申请号：US12161571
申请日：2007-01-24
申请人： Godefridus Hurkx , Prabhat Agarwal
发明人： Godefridus Hurkx , Prabhat Agarwal
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L29/1054 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/47 , H01L29/66666 , H01L29/78 , H01L29/7827 , Y10S977/762 , Y10S977/938
摘要： The invention suggests a transistor (21) comprising a source (24) and a drain (29) as well as a barrier region (27) located between the source and the drain. The barrier region is separated from the source and the drain by intrinsic or lowly doped regions (26, 28) of a semiconductor material. Potential barriers are formed at the interfaces of the barrier region and the intrinsic or lowly doped regions. A gate electrode (32) is provided in the vicinity of the potential barriers such that the effective height and/or width of the potential barriers can be modulated by applying an appropriate voltage to the gate electrode.
摘要翻译：本发明提出了一种包括源极（24）和漏极（29）的晶体管（21）以及位于源极和漏极之间的阻挡区域（27）。通过半导体材料的本征或低掺杂区域（26,28）将势垒区域与源极和漏极分离。在屏障区域和本征或低掺杂区域的界面处形成势垒。栅电极（32）设置在势垒附近，使得可以通过向栅电极施加适当的电压来调制势垒的有效高度和/或宽度。

3. 发明申请

US20060131736A1 PACKAGE FOR A HIGH-FREQUENCY ELECTRONIC DEVICE 有权
标题翻译：高频电子设备的封装
公开(公告)号：US20060131736A1
公开(公告)日：2006-06-22
申请号：US10560004
申请日：2004-06-08
申请人： Andreas Jansman , Ronald Dekker , Godefridus Hurkx , Wibo Van Noort , Antonius Lucien Kemmeren
发明人： Andreas Jansman , Ronald Dekker , Godefridus Hurkx , Wibo Van Noort , Antonius Lucien Kemmeren
IPC分类号： H01L23/34
CPC分类号： H01L24/82 , H01L23/36 , H01L23/5389 , H01L23/66 , H01L24/24 , H01L2223/6644 , H01L2224/16225 , H01L2224/24137 , H01L2224/24227 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1306 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/15192 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00012 , H01L2924/00
摘要： The electronic device comprises a substrate (1) with a cavity (6) in which an active device (8) is present. On the first side (2) of the substrate an interconnect structure (17) extends over the cavity and the substrate. On the second side (3) of the substrate to which the cavity extends, a heat sink (23) is available. The device is particularly suitable for use at high frequencies, for instance higher than 2 GHz and under conditions of high dissipation.
摘要翻译：电子设备包括具有空腔（6）的衬底（1），其中存在有源器件（8）。在衬底的第一侧（2）上，互连结构（17）在空腔和衬底上延伸。在空腔延伸的基板的第二面（3）上，散热片（23）是可用的。该器件特别适用于高频率，例如高于2GHz和高耗散条件下使用。

4. 发明申请

US20060181257A1 Current mirror 有权
标题翻译：电流镜
公开(公告)号：US20060181257A1
公开(公告)日：2006-08-17
申请号：US10548252
申请日：2004-03-01
申请人： Hugo Veenstra , Godefridus Hurkx , Johannes Hubertus Brekelmans , Dave Van Goor
发明人： Hugo Veenstra , Godefridus Hurkx , Johannes Hubertus Brekelmans , Dave Van Goor
IPC分类号： G05F3/16
CPC分类号： G05F3/265
摘要： The present invention relates to Current mirror for generating a constant mirror ratio, comprising an output transistor (Tout) having a base, an emitter and a collector, wherein a current flowing through the collector of said output transistor (Tout) constitutes an output current (Iout) of said current mirror and the collector of said output transistor (Tout) is connectable to an output circuit, a buffer transistor having a base, an emitter and a collector, wherein the emitter of the buffer transistor is connected to the base of the output transistor, a buffer current source for providing a fixed buffer current, wherein said buffer current source is connected to the collector of the buffer transistor, and a buffer base voltage control means having an input connected to the base of the output transistor and an output connected to the base of the buffer transistor, wherein the base voltage control means is adapted to controlling a voltage at the base of the buffer transistor in response to a current at the input of the buffer base voltage control means.
摘要翻译：本发明涉及用于产生恒定镜面比例的电流镜，其包括具有基极，发射极和集电极的输出晶体管（T OUT），其中流过所述输出的集电极的电流晶体管（T out out out）构成所述电流镜的输出电流（I OUT），并且所述输出晶体管的集电极（T out out）是可连接到输出电路，具有基极，发射极和集电极的缓冲晶体管，其中缓冲晶体管的发射极连接到输出晶体管的基极，缓冲电流源用于提供固定的缓冲电流，其中所述缓冲器电流源连接到缓冲晶体管的集电极，以及缓冲器基极电压控制装置，其具有连接到输出晶体管的基极的输入端和连接到缓冲晶体管的基极的输出，其中基极电压控制装置被适配以控制电压 e缓冲晶体管的基极，响应于缓冲器基极电压控制装置的输入处的电流。

5. 发明授权

US08183894B2 Device for and a method of generating signals 有权
标题翻译：用于生成信号的装置和方法
公开(公告)号：US08183894B2
公开(公告)日：2012-05-22
申请号：US12674735
申请日：2008-08-06
申请人： Sebastien Nuttinck , Tony Vanhoucke , Godefridus Hurkx
发明人： Sebastien Nuttinck , Tony Vanhoucke , Godefridus Hurkx
IPC分类号： H03B19/00
CPC分类号： H03F3/19 , H03B19/14 , H03D2200/0021
摘要： A device (100) for generating an output signal (So) having substantially same or increased output frequency compared to an input frequency of an input signal (Si), the device (100) comprising: a bipolar transistor (102) having a base (B), a collector (C), and an emitter (E); a control unit (104) adapted for controlling application of the input signal (Si) to the base (B) and adapted for controlling application of a collector-emitter voltage between the collector (C) and the emitter (E) in a manner for operating the bipolar transistor (102) in a snap-back regime to obtain a non-linear collector current characteristic to thereby generate the output signal (So) having the substantially same or increased output frequency resulting from a steeply rising collector current.
摘要翻译：一种用于产生与输入信号（Si）的输入频率相比具有基本相同或增加的输出频率的输出信号（So）的装置（100），所述装置（100）包括：双极晶体管（102），具有基极（ B），集电极（C）和发射极（E）; 控制单元（104），其适于控制对基座（B）的输入信号（Si）的施加，并且适于控制在集电极（C）和发射极（E）之间施加集电极 - 发射极电压，在回扫状态下操作双极晶体管（102）以获得非线性集电极电流特性，从而产生具有由急剧上升的集电极电流产生的基本相同或增加的输出频率的输出信号（So）。

6. 发明申请

US20110215841A1 DEVICE FOR AND A METHOD OF GENERATING SIGNALS 有权
标题翻译：用于生成信号的装置和方法
公开(公告)号：US20110215841A1
公开(公告)日：2011-09-08
申请号：US12674735
申请日：2008-08-06
申请人： Sebastien Nuttinck , Tony Vanhoucke , Godefridus Hurkx
发明人： Sebastien Nuttinck , Tony Vanhoucke , Godefridus Hurkx
IPC分类号： H03B19/14
CPC分类号： H03F3/19 , H03B19/14 , H03D2200/0021
摘要： A device (100) for generating an output signal (So) having substantially same or increased output frequency compared to an input frequency of an input signal (Si), the device (100) comprising: a bipolar transistor (102) having a base (B), a collector (C), and an emitter (E); a control unit (104) adapted for controlling application of the input signal (Si) to the base (B) and adapted for controlling application of a collector-emitter voltage between the collector (C) and the emitter (E) in a manner for operating the bipolar transistor (102) in a snap-back regime to obtain a non-linear collector current characteristic to thereby generate the output signal (So) having the substantially same or increased output frequency resulting from a steeply rising collector current.
摘要翻译：一种用于产生与输入信号（Si）的输入频率相比具有基本相同或增加的输出频率的输出信号（So）的装置（100），所述装置（100）包括：双极晶体管（102），具有基极（ B），集电极（C）和发射极（E）; 控制单元（104），其适于控制对基座（B）的输入信号（Si）的施加，并且适于控制在集电极（C）和发射极（E）之间施加集电极 - 发射极电压，在回扫状态下操作双极晶体管（102）以获得非线性集电极电流特性，从而产生具有由急剧上升的集电极电流产生的基本相同或增加的输出频率的输出信号（So）。

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