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1. 发明授权

US09991095B2 Ion source cleaning in semiconductor processing systems 有权
公开(公告)号：US09991095B2
公开(公告)日：2018-06-05
申请号：US13201188
申请日：2009-08-12
申请人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
发明人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
IPC分类号： B05D5/12 , H01J37/317 , C23C14/48 , C23C14/54 , C23C14/56 , H01J37/08 , H01J37/16 , H01J37/18
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

2. 发明申请

US20110259366A1 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统中的离子源清洁
公开(公告)号：US20110259366A1
公开(公告)日：2011-10-27
申请号：US12867245
申请日：2009-02-11
申请人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
发明人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
IPC分类号： B08B7/00 , H01L21/265 , B08B5/00
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
摘要翻译：使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分，通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻。还描述了使用诸如XeFx，WFx，AsFx，PFx和TaFx的反应性气体，其中x具有化学计量学上适当的值或值范围，用于清除离子注入器或植入物的组分的原位或非原生境清洁布置，在环境温度，升高的温度或等离子体条件下。在特定的反应性清洁剂中，BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法，包括使所述前沿与清洁气体接触，其中所述清洁气体与所述沉积物化学反应。还描述了改进离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。

3. 发明申请

US20120058252A1 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 有权
标题翻译：半导体加工系统中的离子源清洁
公开(公告)号：US20120058252A1
公开(公告)日：2012-03-08
申请号：US13201188
申请日：2009-08-12
申请人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
发明人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
IPC分类号： B08B5/00 , B05D3/10 , B05D5/12
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.
摘要翻译：使用温度和/或反应性清洗剂清洁离子注入系统或其组件，使得能够通过监测阴极偏置功率并根据比较值采取校正动作来增加/蚀刻用于离子注入系统的间接加热的阴极中的阴极以蚀刻或再生阴极。

4. 发明申请

US20120252195A1 ION IMPLANTATION SYSTEM AND METHOD 有权
标题翻译：离子植入系统和方法
公开(公告)号：US20120252195A1
公开(公告)日：2012-10-04
申请号：US13502855
申请日：2010-10-25
申请人： Edward E. Jones , Sharad N. Yedave , Ying Tang , Barry Lewis Chambers , Robert Kaim , Joseph D. Sweeney , Oleg Byl , Peng Zou
发明人： Edward E. Jones , Sharad N. Yedave , Ying Tang , Barry Lewis Chambers , Robert Kaim , Joseph D. Sweeney , Oleg Byl , Peng Zou
IPC分类号： H01L21/265 , C23C16/50
CPC分类号： H01L21/265 , C23C14/48 , C23C14/52 , H01J37/08 , H01J37/3171 , H01J37/32055 , H01J37/32412 , H01J37/32449 , H01J2237/006 , H01J2237/022
摘要： An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
摘要翻译：一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。描述了各种电弧室热管理布置，以及等离子体性能，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流路中沉积物的检测和源寿命优化等方面的改进，以实现高效率离子注入系统的操作。

5. 发明授权

US08796131B2 Ion implantation system and method 有权
标题翻译：离子注入系统及方法
公开(公告)号：US08796131B2
公开(公告)日：2014-08-05
申请号：US13502855
申请日：2010-10-25
申请人： Edward E. Jones , Sharad N. Yedave , Ying Tang , Barry Lewis Chambers , Robert Kaim , Joseph D. Sweeney , Oleg Byl , Peng Zou
发明人： Edward E. Jones , Sharad N. Yedave , Ying Tang , Barry Lewis Chambers , Robert Kaim , Joseph D. Sweeney , Oleg Byl , Peng Zou
IPC分类号： H01L21/44
CPC分类号： H01L21/265 , C23C14/48 , C23C14/52 , H01J37/08 , H01J37/3171 , H01J37/32055 , H01J37/32412 , H01J37/32449 , H01J2237/006 , H01J2237/022
摘要： An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
摘要翻译：一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。描述了各种电弧室热管理布置，以及等离子体性能，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流路中沉积物的检测和源寿命优化等方面的改进，以实现高效率离子注入系统的操作。

6. 发明授权

US08138071B2 Isotopically-enriched boron-containing compounds, and methods of making and using same 有权
标题翻译：同位素富集的含硼化合物及其制备和使用方法
公开(公告)号：US08138071B2
公开(公告)日：2012-03-20
申请号：US12913721
申请日：2010-10-27
申请人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： C01B35/061 , C01P2006/88 , H01J2237/08 , H01J2237/31701
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要翻译：包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率。该化合物可以具有化学式B2F4。对这些化合物的合成方法以及使用这种化合物的离子注入方法进行了描述，以及存储和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

7. 发明授权

US08062965B2 Isotopically-enriched boron-containing compounds, and methods of making and using same 有权
标题翻译：同位素富集的含硼化合物及其制备和使用方法
公开(公告)号：US08062965B2
公开(公告)日：2011-11-22
申请号：US13048367
申请日：2011-03-15
申请人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要翻译：包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率。该化合物可以具有化学式B2F4。对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

8. 发明授权

US08598022B2 Isotopically-enriched boron-containing compounds, and methods of making and using same 有权
公开(公告)号：US08598022B2
公开(公告)日：2013-12-03
申请号：US13300575
申请日：2011-11-19
申请人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , C01B35/00 , C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , H01L21/265 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

9. 发明申请

US20120108044A1 ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME 有权
标题翻译：同位素丰富的含硼化合物及其制备方法和使用方法
公开(公告)号：US20120108044A1
公开(公告)日：2012-05-03
申请号：US13300575
申请日：2011-11-19
申请人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
IPC分类号： H01L21/265 , G21K5/00
CPC分类号： H01J37/3171 , C01B35/00 , C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , H01L21/265 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要翻译：包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率。该化合物可以具有化学式B2F4。对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

10. 发明申请

US20110159671A1 ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME 有权
标题翻译：同位素丰富的含硼化合物及其制备方法和使用方法
公开(公告)号：US20110159671A1
公开(公告)日：2011-06-30
申请号：US13048367
申请日：2011-03-15
申请人： Robert KAIM , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
发明人： Robert KAIM , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
IPC分类号： H01L21/265 , C01B35/06
CPC分类号： C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要翻译：包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率。该化合物可以具有化学式B2F4。对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

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