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1. 发明专利

JPS63301541A MEASUREMENT OF PATTERN SHIFT 失效
公开(公告)号：JPS63301541A
公开(公告)日：1988-12-08
申请号：JP13543487
申请日：1987-05-31
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： DOI ATSUYUKI , IKUTA AKIO
IPC分类号： H01L21/205 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To enable multiple-point measurements in a silicon substrate surface just after epitaxial growth to be accomplished in one and the same measuring process for the improvement of work efficiency by a method wherein etching is performed for a specified period of time and the difference is determined, on one and the same substrate plane, between the pattern position in a diffusion process and that in the epitaxial growth process. CONSTITUTION:Epitaxial growth is accomplished after diffusion into a silicon substrate. Pattern shift is determined by detecting the difference between the pattern position in the diffusion process and that in the epitaxial growth process. The silicon substrate after the epitaxial growth is subjected to etching for a prescribed period of time and then the difference is determined between the pattern position in the diffusion process and that in the epitaxial growth on one and the same substrate plane. In this way, the pattern shift determining flow is simplified and the time for determination is shortened. A multiplicity of silicon substrate may be simultaneously processed in one etching process and a multi-point measurement in a silicon substrate surface may be accomplished in one and the same measuring process.

2. 发明专利

JPH02151035A BURIED-IN DIFFUSION PROCESS IN BIPOLAR IC MANUFACTURE 失效
公开(公告)号：JPH02151035A
公开(公告)日：1990-06-11
申请号：JP30575788
申请日：1988-12-01
申请人： KYUSHU ELECTRON METAL , OSAKA TITANIUM
发明人： KANEKO TERUHIKO , DOI ATSUYUKI
IPC分类号： H01L29/73 , H01L21/322 , H01L21/331 , H01L21/74
摘要： PURPOSE:To reduce any pollution and defect by a method wherein, in order to form an IG layer again after thermal diffusion, the pollution and defect on the silicon substrate surfaces produced during the buried-in diffusion process are gettered. CONSTITUTION:Silicon substrates are fed to a diffusion furnace at 800 deg.C to be heated up to 1300 deg.C at the rising temperature rate (b) of 5.0 deg.C/Hr and then held at this thermal diffusion temperature for 6 hours for thermal diffusion to be further held at 1050 deg.C for 6 hours halfway at the falling temperature rate (c) of 4.0 deg.C/Hr for IG layer formation and then cooled down to 800 deg.C. Since during the buried-in diffusion process into the silicon substrates in the bipolar IC manufacturing process, the impurities of the silicon substrate patterned on the surface are buried-in diffused (a) while the IG layer destroyed by this high temperature heating process is formed again in the silicon substrates halfway in the cooling down process, any pollution and defect on the surface of the silicon substrates can be gettered by the 10 layer. Through these procedures, such a pollution and defect can be reduced.

3. 发明专利

JPH0437025A VAPOR GROWTH EQUIPMENT 失效
公开(公告)号：JPH0437025A
公开(公告)日：1992-02-07
申请号：JP14409290
申请日：1990-05-31
申请人： KYUSHU ELECTRON METAL , OSAKA TITANIUM
发明人： DOI ATSUYUKI , OKAMOTO KIMITAKA
IPC分类号： H01L21/205
摘要： PURPOSE:To keep the inside of a reaction vessel in a constant dry atmosphere, and remarkably reduce epitaxial crystal defect, by constituting the aperture part of a reaction vessel so as to be able to jet dry inert gas toward the outside of the reaction vessel. CONSTITUTION:After a necessary film forming process is finished, reaction gas supply is interrupted, and the following are started; purging with dry N2 gas from a sealing plate 4, purging from an N2 gas jetting equipment 10, and purging with dry N2 gas from the jet nozzle of a gas ring 5 operated by a switching valve 11. After the ascending of a susceptor 3, the aperture part of a reaction vessel 1 is sealed by dry N2 gas from a gas jetting equipment 10 installed on the gas ring 5. The inside of the vessel 1 is kept in a constant dry atmosphere by jetting dry N2 gas into the inside of the vessel 1 from the gas ring 5. Hence the attaching water content amount and the formation material due to reaction gas residue can be reduced, so that very excellent epitaxial growth is realized and the reduction of particles is enabled.

4. 发明专利

JPH0395925A WORK COIL GAS PURGING DEVICE FOR VAPOR GROWING APPARATUS 失效
公开(公告)号：JPH0395925A
公开(公告)日：1991-04-22
申请号：JP23313089
申请日：1989-09-08
申请人： KYUSHU ELECTRON METAL , OSAKA TITANIUM
发明人： OTSUBO TOSHIRO , MATSUDA MASAHIKO , DOI ATSUYUKI
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To unitarily control changeover of shielding N2 gas, H2 gas, regulation of flow rate by one gas supply line in response to the operation of a furnace by detecting a temperature in a bell-jar by a controller, switching the N2 and the H2 gas, detecting introduction or discharge of source gas and etching gas, and regulating the flow rate of the H2 gas. CONSTITUTION:At a time point of changeover from N2 gas to H2 gas, a purge gas controller 40 closes an air operation valve 27 of a N2 gas line 20, opens an air operation valve 37 of a H2 gas line 30, then alters a mass flow controller 12 of a purge gas line 10 to that for the H2 gas, then opens an air operation valve 11, purges it with the H2 gas, and starts a high frequency induction heating. At the point of reaching a predetermined temperature, etching gas is fed, and the controller 40 controls H2 gas amount during etching. At the time of finishing the etching, the H2 gas amount is changed, H2 gas purging is started. After completion, it is heated down, and held at a predetermined temperature. Source gas is introduced, and vapor chemical reaction is executed.

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