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1. 发明专利

JPS63301541A MEASUREMENT OF PATTERN SHIFT 失效
公开(公告)号：JPS63301541A
公开(公告)日：1988-12-08
申请号：JP13543487
申请日：1987-05-31
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： DOI ATSUYUKI , IKUTA AKIO
IPC分类号： H01L21/205 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To enable multiple-point measurements in a silicon substrate surface just after epitaxial growth to be accomplished in one and the same measuring process for the improvement of work efficiency by a method wherein etching is performed for a specified period of time and the difference is determined, on one and the same substrate plane, between the pattern position in a diffusion process and that in the epitaxial growth process. CONSTITUTION:Epitaxial growth is accomplished after diffusion into a silicon substrate. Pattern shift is determined by detecting the difference between the pattern position in the diffusion process and that in the epitaxial growth process. The silicon substrate after the epitaxial growth is subjected to etching for a prescribed period of time and then the difference is determined between the pattern position in the diffusion process and that in the epitaxial growth on one and the same substrate plane. In this way, the pattern shift determining flow is simplified and the time for determination is shortened. A multiplicity of silicon substrate may be simultaneously processed in one etching process and a multi-point measurement in a silicon substrate surface may be accomplished in one and the same measuring process.

2. 发明专利

JPS63222429A MANUFACTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPS63222429A
公开(公告)日：1988-09-16
申请号：JP5627587
申请日：1987-03-11
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： IKUTA AKIO
IPC分类号： H01L21/22
摘要： PURPOSE:To control sheet resistance highly accurately, by performing deposition diffusion and driving diffusion based on specified Expressions, and separating and correcting fluctuating factors in said diffusions for every lot. CONSTITUTION:The Expression I, which expresses relation between a sheet resistance rhoS1 and a diffusing time t1 in deposition diffusion, is corrected every time based on the actually measured sheet resistance value after the deposition diffusion in previous time. Then the diffusion time corresponding to an objective sheet resistance is obtained by the Expression I. Thus the deposition diffusing is performed. Average impurity concentration corresponding to the objective sheet resistance is obtained based on the Expression II expressing relation between average impurity concentration N1 and the resistance rhoS1 in the deposition diffusion. The expression III, which expresses relation for the average impurity concentration, a sheet resistance rhoS2 and a diffusing time t2 in driving diffusion, are corrected every time based on the actually measured sheet resistance value after the driving diffusion in previous time. Then the diffusion time corresponding to the objective sheet resistance and the average impurity concentration is obtained by the Expression IV, and the driving diffusion is performed.

3. 发明专利

JPS63222428A MANUFACTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPS63222428A
公开(公告)日：1988-09-16
申请号：JP5627487
申请日：1987-03-11
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： IKUTA AKIO
IPC分类号： H01L21/22
摘要： PURPOSE:To eliminate variability of a sheet resistance after each treatment, by computing a diffusion time of deposition diffusion according to a specified relationship, computing an average impurity concentration in the deposition diffusion, and computing the diffusion time in drive diffusion. CONSTITUTION:After impurities are diffused and deposited into a substrate, drive diffusion is performed, and a semiconductor is manufactured. Here, a diffusion time corresponding to an objective sheet resistance is obtained based on an expression I expressing relationship between a resistance rhoS1 and a diffusion time t1 in the deposition diffusion, and the deposition diffusion is performed. An average impurity concentration corresponding to the objective sheet resistance is obtained based on an Expression II expressing relation between the average impurity concentration N1 and the resistance rhoS1 in the deposition diffusion. The drive diffusion is performed for a diffusion time t2 corresponding to the objective resistance and the concentration N1, based on an Expression III expressing relationship in correspondence with the concentration N1, a sheet resistance rhoS2 and a diffusion time t2.

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