专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009008982A2 SINGLE PHASE PROXIMITY HEAD HAVING A CONTROLLED MENISCUS FOR TREATING A SUBSTRATE 审中-公开
标题翻译：具有用于处理基板的控制菜单的单相位近端头
公开(公告)号：WO2009008982A2
公开(公告)日：2009-01-15
申请号：PCT/US2008/008199
申请日：2008-06-30
申请人： LAM RESEARCH CORPORATION , RAVKIN, Michael , KABANSKY, Alex , DELARIOS, John, M.
发明人： RAVKIN, Michael , KABANSKY, Alex , DELARIOS, John, M.
IPC分类号： F26B21/00 , F26B21/06
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67051 , Y10S134/902
摘要： A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.
摘要翻译：描述用于处理衬底的系统。该系统包括接近头，机构和液体供应。邻近头部被配置为产生受控弯液面。具体而言，邻近头部具有形成在邻近头部的表面上的多个分配喷嘴。分配喷嘴被配置为向弯月面供应液体，并且添加吸入孔以从弯月面去除使用过的液体。该机构相对于彼此移动邻近头部或衬底，同时保持弯月面和衬底的表面之间的接触。该运动导致薄层的液体在与弯液面接触之后保留在表面上。液体供应与分配喷嘴流体连通，并且被配置为平衡输送到弯液面的液体量与从弯月面移除的液体量，从弯液面移除的液体量至少包括薄层残留在基材表面上的液体。

2. 发明申请

WO2007078956A2 METHOD AND APPARATUS FOR PARTICLE REMOVAL 审中-公开
标题翻译：方法和装置去除颗粒
公开(公告)号：WO2007078956A2
公开(公告)日：2007-07-12
申请号：PCT/US2006/048552
申请日：2006-12-18
申请人： LAM RESEARCH CORPORATION , FREER, Erik, M. , DELARIOS, John, M. , MIKHAYLICHENKO, Katrina , RAVKIN, Michael , KOROLIK, Mikhail , REDEKER, Fritz, C.
发明人： FREER, Erik, M. , DELARIOS, John, M. , MIKHAYLICHENKO, Katrina , RAVKIN, Michael , KOROLIK, Mikhail , REDEKER, Fritz, C.
IPC分类号： B08B3/00 , B08B3/12
CPC分类号： B08B3/024 , B08B3/003 , B08B3/08 , B08B6/00 , H01L21/67051
摘要： A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.
摘要翻译：一种用于清洁其上具有颗粒物质的表面的表面的方法和系统，其特征在于其表面上具有夹带在其中的具有耦合元件的液体的射流。赋予耦合元件足够的阻力以相对于液体具有相同的移动并使颗粒物质相对于基底移动。

3. 发明申请

WO2008136895A1 SUBSTRATE CLEANING TECHNIQUES EMPLOYING MULTI-PHASE SOLUTION 审中-公开
标题翻译：使用多相解决方案的基板清洗技术
公开(公告)号：WO2008136895A1
公开(公告)日：2008-11-13
申请号：PCT/US2008/004488
申请日：2008-04-04
申请人： LAM RESEARCH CORPORATION , FREER, Erik, M. , DELARIOS, John, M. , RAVKIN, Michael , KOROLIK, Mikhail , REDEKER, Fritz, C.
发明人： FREER, Erik, M. , DELARIOS, John, M. , RAVKIN, Michael , KOROLIK, Mikhail , REDEKER, Fritz, C.
IPC分类号： H01L21/465
CPC分类号： H01L21/02057 , H01L21/02052 , H01L21/67034 , H01L21/67057 , H01L21/67751
摘要： A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.
摘要翻译：一种用于清洁其上具有颗粒物质的半导体晶片的相对表面的方法和系统。该方法包括产生流体和衬底之间的相对运动。相对运动在与相对表面之一的法线横向的方向上，并且产生两个间隔开的流动。每个流体与相对于与多个流动的剩余流动相邻的相对表面不同的一个相对表面相邻。流体具有夹带在其中的耦合元件，并且建立相对运动以在联接元件的子集上施加足够的阻力以产生该流体内该子集的耦合元件的运动。以这种方式，将一定量的阻力赋予颗粒物质以使颗粒物质相对于基底移动。

4. 发明申请

WO2009151656A2 METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
标题翻译：电介质膜处理方法
公开(公告)号：WO2009151656A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/035030
申请日：2009-02-24
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , ZHU, Ji , DELARIOS, John, M. , WILCOXSON, Mark
发明人： YUN, Seokmin , ZHU, Ji , DELARIOS, John, M. , WILCOXSON, Mark
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

5. 发明授权

EP1056549B1 A CLEANING/BUFFING APPARATUS FOR USE IN A WAFER PROCESSING DEVICE 有权
标题翻译：清洁/ SCHWABBELEINHEIT半导体加工设备
公开(公告)号：EP1056549B1
公开(公告)日：2003-12-03
申请号：EP99903190.9
申请日：1999-01-19
申请人： LAM RESEARCH CORPORATION
发明人： RAVKIN, Mikhael , DELARIOS, John, M. , ZHANG, Xiuhua , GOCKEL, Thomas, R.
IPC分类号： B08B1/04 , H01L21/00 , B24B29/02 , B24B37/04
CPC分类号： H01L21/67046 , B08B1/04 , B24B29/02 , B24B37/04 , H01L21/67028
摘要： A semiconductor processing system, such as a system for buffing or scrubbing both sides of a wafer at the same time, that includes a processing box for use with chemical solutions, a positioning device to position a semiconductor substrate, or other similar semiconductor material or device, and a placement device to place a buffing pad or scrubbing brush.

6. 发明公开

EP1268079A2 DRIP MANIFOLD FOR UNIFORM CHEMICAL DELIVERY 有权
标题翻译：降分布甚至使化学
公开(公告)号：EP1268079A2
公开(公告)日：2003-01-02
申请号：EP01920815.6
申请日：2001-03-27
申请人： LAM RESEARCH CORPORATION
发明人： ANDERSON, DON, E. , MIKHAYLICH, Katrina, A. , RAVKIN, Mike , DELARIOS, John, M.
IPC分类号： B05B1/02 , B08B1/04 , B08B3/04 , H01L21/00
CPC分类号： H01L21/67051 , B08B1/04 , B08B3/04 , Y10S134/902 , Y10S239/19
摘要： A drip manifold (220) having drip nozzles (200) configured to form controlled droplets (204a) is provided for use in wafer cleaning systems (120). The drip manifold (220) includes a plurality of drip nozzles (200) that are secured to the drip manifold (220). Each of the plurality of drip nozzles (200) has a passage (205) defined between a first end (201a) and a second end (201b). A sapphire orifice (202) is defined within the passage (205) and is located at the first end (201a) of the drip nozzle (200). The sapphire orifice (202) is angled to produce a fluid stream that is reflected within the passage (205) and toward the second end (201b) to form one or more uniform drops (204a) over a brush (300).

7. 发明授权

EP1086191B1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES AFTER POLISHING OF COPPER FILM 有权
标题翻译：方法和设备清洁半导体衬底后的波兰DESKUPFERFILMS
公开(公告)号：EP1086191B1
公开(公告)日：2008-05-28
申请号：EP99907149.1
申请日：1999-02-18
申请人： LAM RESEARCH CORPORATION
发明人： LI, Xu , ZHAO, Yuexing , HYMES, Diane, J. , DELARIOS, John, M.
IPC分类号： C09K13/00 , C09K13/06 , C09K13/08 , C09K13/02 , C09K13/04 , H01L21/321 , H01L21/306 , C11D1/00
CPC分类号： H01L21/02074 , C09K13/00 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination. The figure illustrates a flowchart of one embodiment of the process of the present invention wherein (310) is the step of polishing a copper layer on a semiconductor substrate followed by (320) the step of placing the polished semiconductor substrate in a scrubber followed by (330) the step of scrubbing the polished semiconductor substrate and ending with (340) the step of applying an acidic cleaning solution to the polished semiconductor substrate during scrubbing.

8. 发明公开

EP2272086A2 METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
标题翻译：方法进行处理的介电薄膜
公开(公告)号：EP2272086A2
公开(公告)日：2011-01-12
申请号：EP09762952.1
申请日：2009-02-24
申请人： Lam Research Corporation
发明人： YUN, Seokmin , ZHU, Ji , DELARIOS, John, M. , WILCOXSON, Mark
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

9. 发明公开

EP1965931A2 METHOD AND APPARATUS FOR PARTICLE REMOVAL 审中-公开
标题翻译：方法和装置去除颗粒
公开(公告)号：EP1965931A2
公开(公告)日：2008-09-10
申请号：EP06847809.8
申请日：2006-12-18
申请人： Lam Research Corporation
发明人： FREER, Erik, M. , DELARIOS, John, M. , MIKHAYLICHENKO, Katrina , RAVKIN, Michael , KOROLIK, Mikhail , REDEKER, Fritz, C.
IPC分类号： B08B3/00
CPC分类号： B08B3/024 , B08B3/003 , B08B3/08 , B08B6/00 , H01L21/67051
摘要： A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.

10. 发明授权

EP1268079B1 DRIP MANIFOLD FOR UNIFORM CHEMICAL DELIVERY 有权
标题翻译：降分布甚至使化学
公开(公告)号：EP1268079B1
公开(公告)日：2006-08-23
申请号：EP01920815.6
申请日：2001-03-27
申请人： LAM RESEARCH CORPORATION
发明人： ANDERSON, DON, E. , MIKHAYLICH, Katrina, A. , RAVKIN, Mike , DELARIOS, John, M.
IPC分类号： B05B1/02 , B08B1/04 , B08B3/04 , H01L21/00
CPC分类号： H01L21/67051 , B08B1/04 , B08B3/04 , Y10S134/902 , Y10S239/19
摘要： A drip manifold having drip nozzles configured to form controlled droplets is provided for use in wafer cleaning systems. The drip manifold includes a plurality of drip nozzles that are secured to the drip manifold. Each of the plurality of drip nozzles has a passage defined between a first end and a second end. A sapphire orifice is defined within the passage and is located at the first end of the drip nozzle. The sapphire orifice is angled to produce a fluid stream that is reflected within the passage and toward the second end to form one or more uniform drops over a brush.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式